8 intshi 200mm iSapphire Wafer Carrier Subsrate 1SP 2SP 0.5mm 0.75mm

Inkcazelo emfutshane:

I-8-intshi ye-sapphire substrate wafer yimathiriyeli yekristale ekumgangatho ophezulu, ehlala ixesha elide esetyenziswa kwizicelo ezahlukeneyo.Iyaziwa ngokugqwesa kwe-thermal kunye nokuzinza kweekhemikhali, kunye nokubonakala kwayo okuphezulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Indlela Yokuvelisa

Inkqubo yokwenziwa kwe-8-intshi ye-sapphire substrate ibandakanya amanyathelo amaninzi.Okokuqala, umgubo we-alumina ococekileyo unyibilika kwiqondo lobushushu eliphezulu ukwenza imo etyhidiweyo.Emva koko, ikristale yembewu intywiliselwa ekunyibilikeni, ivumela isafire ukuba ikhule njengoko imbewu irhoxa kancinci.Emva kokukhula ngokwaneleyo, ikristale yesafire isikwa ngononophelo ibe ngamaqhekeza amancinci, athi ke akhazimliswe ukuze afikelele indawo egudileyo kwaye engenasiphako.

Ukusetyenziswa kwe-8-intshi ye-sapphire substrate: I-8-intshi ye-sapphire substrate isetyenziswa ngokubanzi kwishishini le-semiconductor, ngokukodwa kwimveliso yezixhobo zombane kunye ne-optoelectronic components.Isebenza njengesiseko esibalulekileyo sokukhula kwe-epitaxial ye-semiconductors, eyenza ukusekwa kweesekethe ezidityanisiweyo ezisebenza ngokuphezulu, ii-diode ezikhupha ukukhanya (ii-LED), kunye ne-laser diode.ISapphire substrate iphinda ifumane izicelo ekwenziweni kweefestile zamehlo, ubuso bewotshi, kunye nezixhobo ezikhuselayo zee-smartphones kunye neetafile.

Iinkcazo zemveliso ye-8-intshi yesafire substrate

- Ubungakanani: I-8-intshi ye-sapphire substrate inobubanzi be-200mm, inika indawo enkulu yendawo yokubeka i-epitaxiallayers.

- Umgangatho woMgangatho: Umphezulu we-substrate ucocwe ngononophelo ukuze ufezekise umgangatho ophezulu we-optical, kunye nobunzima bomhlaba obungaphantsi kwe-0.5 nm RMS.

- Ukutyeba: Ubukhulu obuqhelekileyo be-substrate yi-0.5 mm.Nangona kunjalo, ukhetho lobungakanani obulungiselelweyo buyafumaneka xa uceliwe.

- Ukupakishwa: I-substrates ye-sapphire ipakishwe ngabanye ukuqinisekisa ukhuseleko ngexesha lokuthutha kunye nokugcinwa.Ngokuqhelekileyo zibekwe kwiitreyi ezikhethekileyo okanye iibhokisi, kunye nezixhobo ezifanelekileyo zokukhusela ukuthintela nawuphi na umonakalo.

- I-Edge Orientation: I-substrate iza kunye ne-edge orientation echaziweyo, eyona nto ibalulekileyo ukulungelelaniswa okuchanekileyo ngexesha leenkqubo zokuvelisa i-semiconductor.

Ukuqukumbela, i-8-intshi ye-sapphire substrate yinto eguquguqukayo kwaye inokwethenjelwa, isetyenziswa ngokubanzi kwishishini le-semiconductor ngenxa yeempawu zayo ezikhethekileyo ze-thermal, iikhemikhali kunye ne-optical.Ngomgangatho wayo obalaseleyo womphezulu kunye neenkcukacha ezichanekileyo, isebenza njengenxalenye ebalulekileyo ekuvelisweni kwezixhobo eziphezulu ze-elektroniki kunye ne-optoelectronic.

Idayagram eneenkcukacha

8 intshi 200mm iSapphire Wafer Carrier Carrier (1)
8 intshi 200mm iSapphire Wafer Carrier Carrier (1)
8 intshi 200mm iSapphire Wafer Carrier Carrier (2)

  • Ngaphambili:
  • Okulandelayo:

  • Bhala umyalezo wakho apha kwaye uwuthumele kuthi