8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu

Inkcazelo emfutshane:

Shanghai Xinkehui Tech.Co., Ltd inikezela ngeyona ndlela ingcono yokukhetha kunye namaxabiso omgangatho ophezulu we-silicon carbide wafers kunye ne-substrates ukuya kuthi ga kwi-8inch diameters nge-N- kunye ne-semi-insulating iindidi.Iinkampani ezincinci kunye nezikhulu zezixhobo zesemiconductor kunye neelebhu zophando ezisetyenziswa kwihlabathi liphela kwaye zixhomekeke kwiiwafers zethu ze-silicone carbide.

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200mm 8inch iSiC Substrate Specification

Ubungakanani: 8inch;

Ububanzi: 200mm±0.2;

Ukutyeba: 500um±25;

I-Surface Orientation: 4 ukuya [11-20] ± 0.5 °;

Ukuqhelaniswa nenotshi:[1-100] ±1°;

Ubunzulu benotshi: 1±0.25mm;

I-Micropipe: <1cm2;

Iipleyiti zeHex: Akukho nanye iVunyiweyo;

Ukuxhathisa: 0.015~0.028Ω;

I-EPD: <8000cm2;

I-TED: <6000cm2

I-BPD: <2000cm2

TSD: <1000cm2

SF: indawo<1%

TTV≤15um

Warp≤40um

Bow≤25um

Iindawo zePoly: ≤5%;

Umkrwelo: <5 kunye noBubude obongezelekayo< 1 Wafer Diameter;

IiChips/Iindenti: Akukho mvume D>0.5mm Ububanzi nobunzulu;

Iintanda: Akukho;

Stain: Akukho

Umphetho we-wafer: i-Chamfer;

Ukugqitywa komphezulu: Icala eliphindwe kabini lePolish, iSi Face CMP;

Ukupakishwa: Ikhasethi ye-wafer okanye i-Wafer Container enye;

Ubunzima bangoku ekulungiseleleni i-200mm 4H-SiC iikristale eziphambili

1) Ukulungiswa kweekristale zembewu ezikumgangatho ophezulu we-200mm 4H-SiC;

2) Intsimi yobungakanani obukhulu bobushushu obungafaniyo kunye nolawulo lwenkqubo yenucleation;

3) Ukusebenza kakuhle kwezothutho kunye nokuvela kwezinto zegesi kwiinkqubo ezinkulu zokukhula kwekristale;

4) Ukuqhekeka kweCrystal kunye nokwanda kwesiphene okubangelwa kukunyuka okukhulu koxinzelelo lwe-thermal.

Ukoyisa le mingeni kwaye ufumane umgangatho ophezulu we-200mm SiC waferssolutions uyacetywa:

Ngokumalunga nokulungiswa kwekristale yembewu ye-200mm, intsimi yobushushu obufanelekileyo, kunye nendibano eyandisiweyo yaphononongwa kwaye yenzelwe ukuthathela ingqalelo umgangatho wekristale kunye nobukhulu obandisiweyo;Ukuqala nge-150mm SiC se: d crystal, yenza i-crystal iteration yembewu ukwandisa ngokuthe ngcembe i-Crystasize ye-SiC ide ifike kwi-200mm;Ngokukhula kwekristale ezininzi kunye neprocessiig, ngokuthe ngcembe wandise umgangatho wekristale kwindawo yokwandisa ikristale, kwaye uphucule umgangatho weekristale zembewu ezingama-200mm.

Ngokumalunga ne-200mm ye-crystal conductive kunye nokulungiswa kwe-substrate, uphando luye lwaphucula umgangatho wokushisa kunye noyilo lwentsimi ye-crystalgrowth enkulu, ukuqhuba i-200mm ye-SiC crystal ukukhula, kunye nokulawula ukufana kwe-doping.Emva kokucubungula kunye nokubunjwa kwe-crystal, i-8-inchelectricaly conductive 4H-SiC ingot ene-diameter eqhelekileyo yafunyanwa.Emva kokusika, ukugaya, ukugulisa, ukusetyenzwa ukufumana i-SiC 200mm wafers kunye nobukhulu be-525um okanye njalo.