I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide iDummy yoPhando ibakala lama-500um ubukhulu boMfanekiso obonakalayo

Inkcazelo emfutshane:

Ii-silicon carbide wafers zisetyenziswa kwizixhobo zombane ezifana ne-power diode, ii-MOSFETs, izixhobo ze-microwave ezinamandla aphezulu, kunye ne-RF transistors, eyenza uguqulo lwamandla olusebenzayo kunye nolawulo lwamandla.Ii-wafers ze-SiC kunye ne-substrates zikwafumana ukusetyenziswa kwi-elektroniki yemoto, iinkqubo ze-aerospace, kunye nobuchwepheshe bamandla avuselelekayo.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Uzikhetha njani iiSilicon Carbide Wafers & SiC Substrates?

Xa ukhetha isilicon carbide (SiC) wafers kunye substrates, kukho izinto ezininzi ekufuneka ziqwalaselwe.Nazi ezinye iinqobo ezibalulekileyo:

Uhlobo lwezinto eziphathekayo: Qinisekisa uhlobo lwezinto ze-SiC ezihambelana nesicelo sakho, njenge-4H-SiC okanye i-6H-SiC.Isakhiwo sekristale esisetyenziswa ngokuqhelekileyo yi-4H-SiC.

Uhlobo lweDoping: Gqiba ukuba ufuna i-substrate ye-SiC ene-doped okanye engafakwanga.Iintlobo ze-doping eziqhelekileyo ziyi-N-type (n-doped) okanye i-P-type (p-doped), kuxhomekeke kwiimfuno zakho ezithile.

Umgangatho weCrystal: Vavanya umgangatho wekristale wee-wafers ze-SiC okanye ii-substrates.Umgangatho ofunwayo umiselwa ngokweeparamitha ezifana nenani leziphene, icrystallographic orientation, kunye noburhabaxa bomphezulu.

I-Wafer Diameter: Khetha ubungakanani bewafer obufanelekileyo ngokusekwe kwisicelo sakho.Ubukhulu obuqhelekileyo bubandakanya i-intshi ezi-2, i-intshi ezi-3, i-intshi ezi-4, kunye ne-intshi ezi-6.Ubukhulu bedayamitha, kokukhona unokusifumana isivuno esisicaba.

Ukutyeba: Qwalasela ubukhulu obufunwayo beewafa ze-SiC okanye ii-substrates.Iinketho zokutyeba eziqhelekileyo zisusela kwiimicrometer ezimbalwa ukuya kumakhulu aliqela eemicrometer.

Ukuqhelaniswa: Misela ikristallographic orientation ehambelana neemfuno zesicelo sakho.Uqhelaniso oluqhelekileyo lubandakanya (0001) kwi-4H-SiC kunye (0001) okanye (0001̅) ye-6H-SiC.

Ukugqitywa komphezulu: Vavanya ukugqitywa komphezulu wee-wafers ze-SiC okanye ii-substrates.Umphezulu kufuneka ugudiswe, ukhazimliswe, kwaye ungabinamikrwelo okanye ungcoliseko.

Isidima soMboneleli: Khetha umboneleli othembekileyo onamava abanzi ekuveliseni iiwafers zeSiC ezikumgangatho ophezulu kunye nee substrates.Qwalasela izinto ezinje ngezakhono zokuvelisa, ulawulo lomgangatho, kunye nophononongo lwabathengi.

Iindleko: Qwalasela iindleko, kubandakanywa ixabiso lewafer nganye okanye isubstrate kunye nazo naziphi na iindleko ezongezelelweyo zokulungisa.

Kubalulekile ukuvavanya ngononophelo le miba kwaye udibane neengcali zoshishino okanye ababoneleli ukuqinisekisa ukuba ii-wafers ze-SiC ezikhethiweyo kunye ne-substrates ziyahlangabezana neemfuno zakho zesicelo.