I-8Inch 200mm 4H-N SiC Wafer Ibanga lophando lwe-dummy

8Inch 200mm 4H-N SiC Wafer Ibanga lophando dummy olubonakalayo

Inkcazelo emfutshane:

Njengoko ezothutho, amandla kunye neemarike zemizi-mveliso zikhula, imfuno yezinto ezithembekileyo, ezisebenza ngamandla e-elektroniki ziyaqhubeka ukukhula.Ukuhlangabezana neemfuno zentsebenzo ephuculweyo ye-semiconductor, abavelisi besixhobo bajonge kwi-wide bandgap semiconductor materials, ezifana ne-4H SiC Prime Grade portfolio yethu ye-4H n -type silicon carbide (SiC) wafers.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ngenxa yeempawu zayo ezizodwa kunye ne-elektroniki, i-200mm SiC wafer semiconductor imathiriyeli isetyenziselwa ukwenza ukusebenza okuphezulu, ubushushu obuphezulu, ukumelana nemitha, kunye nezixhobo zombane ezisebenza kakhulu.Ixabiso le-substrate ye-8inch SiC liyehla ngokuthe ngcembe njengoko itekhnoloji ihambela phambili ngakumbi kwaye imfuno ikhula.Uphuhliso lwetekhnoloji yakutsha nje lukhokelela ekuvelisweni kwesikali sokwenziwa kwee-wafers ze-SiC ezingama-200mm.Iinzuzo eziphambili ze-SiC wafer semiconductor materials xa kuthelekiswa ne-Si kunye ne-GaAs wafers: Amandla ombane ombane we-4H-SiC ngexesha lokuphuka kwe-avalanche ingaphezulu komyalelo wobukhulu obuphezulu kunexabiso elihambelanayo le-Si kunye ne-GaAs.Oku kukhokelela ekunciphiseni okubonakalayo kwi-restivity ye-Ron.I-Low-state resistivity, idityaniswe noxinano oluphezulu lwangoku kunye ne-thermal conductivity, ivumela ukusetyenziswa kokufa okuncinci kakhulu kwizixhobo zamandla.I-conductivity ephezulu ye-thermal ye-SiC inciphisa ukuxhathisa kwe-thermal ye-chip.Iimpawu ze-elektroniki zezixhobo ezisekelwe kwii-wafers ze-SiC zizinzile kakhulu ngexesha kunye neqondo lokushisa elizinzileyo, eliqinisekisa ukuthembeka okuphezulu kweemveliso.I-silicon carbide ixhathisa ngokugqithiseleyo kwi-radiation enzima, engayithobiyo i-electronic properties ye-chip.Ukushisa okuphezulu kokusebenza kwekristale (ngaphezulu kwe-6000C) kukuvumela ukuba wenze izixhobo ezinokwethenjelwa kakhulu kwiimeko zokusebenza ezinzima kunye nezicelo ezizodwa.Okwangoku, sinokubonelela ngee-wafers ezincinci ze-200mmSiC ngokuthe ngcembe kwaye ngokuqhubekayo kwaye sibe nesitokhwe kwindawo yokugcina.

Inkcazo

Inani	Into	Iyunithi	Imveliso	Uphando	Dummy
1. Iiparamitha
1.1	i-polytype	--	4H	4H	4H
1.2	ukuqhelaniswa nomphezulu	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Ipharamitha yombane
2.1	dopant	--	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni
2.2	ukumelana	ohm ·cm	0.015~0.025	0.01~0.03	NA
3. Mechanical parameter
3.1	ububanzi	mm	200±0.2	200±0.2	200±0.2
3.2	ubukhulu	μm	500±25	500±25	500±25
3.3	Ukuqhelaniswa nenotshi	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
3.4	Ubunzulu beNotshi	mm	1~1.5	1~1.5	1~1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Ukuqubuda	μm	-25~25	-45~45	-65~65
3.8	I-Wap	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Ubume
4.1	ukuxinana kwemibhobho	uya/cm2	≤2	≤10	≤50
4.2	umxholo wesinyithi	iiathom/cm2	≤1E11	≤1E11	NA
4.3	TSD	uya/cm2	≤500	≤1000	NA
4.4	I-BPD	uya/cm2	≤2000	≤5000	NA
4.5	TED	uya/cm2	≤7000	≤10000	NA
5. Umgangatho oncomekayo
5.1	ngaphambili	--	Si	Si	Si
5.2	umphezulu wokugqiba	--	Si-ubuso CMP	Si-ubuso CMP	Si-ubuso CMP
5.3	isuntswana	isitya/isiqwengana	≤100(ubukhulu≥0.3μm)	NA	NA
5.4	umkrwelo	isitya/isiqwengana	≤5, UBude buBonke≤200mm	NA	NA
5.5	Edge iitshiphusi/ii-idents/amathanda/amabala/ungcoliseko	--	Akukho nanye	Akukho nanye	NA
5.6	Iindawo zePolytype	--	Akukho nanye	Indawo ≤10%	Indawo ≤30%
5.7	uphawu lwangaphambili	--	Akukho nanye	Akukho nanye	Akukho nanye
6. Umgangatho wasemva
6.1	emva kokugqiba	--	C-ubuso MP	C-ubuso MP	C-ubuso MP
6.2	umkrwelo	mm	NA	NA	NA
6.3	Umqolo uneziphene edge iitshiphusi/iindidi	--	Akukho nanye	Akukho nanye	NA
6.4	Umqolo uburhabaxa	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Ukumakisha ngasemva	--	Inotshi	Inotshi	Inotshi
7. Ungqameko
7.1	edge	--	Chamfer	Chamfer	Chamfer
8. Iphakheji
8.1	ukupakishwa	--	I-Epi-ilungile kunye ne-vacuum ukupakishwa	I-Epi-ilungile kunye ne-vacuum ukupakishwa	I-Epi-ilungile kunye ne-vacuum ukupakishwa
8.2	ukupakishwa	--	I-Multi-wafer ukupakishwa kweekhasethi	I-Multi-wafer ukupakishwa kweekhasethi	I-Multi-wafer ukupakishwa kweekhasethi