4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
I-6 intshi ubukhulu besilicon carbide (SiC) ukucaciswa kwesubstrate
IBanga | Zero MPD | Imveliso | IBanga loPhando | IBanga leDummy |
Ububanzi | 150.0mm±0.25mm | |||
Ukutyeba | 4H-N | 350um±25um | ||
4H-SI | 500um±25um | |||
Iwafer Orientation | Kwi-axis : <0001> ± 0.5 ° ye-4H-SI | |||
IFlethi yaseprayimari | {10-10} ±5.0° | |||
Ubude beFlethi obuPhambili | 47.5mm±2.5mm | |||
Ukukhutshwa komda | 3mm | |||
TTV / isaphetha / Warp | ≤15um/≤40um/≤60um | |||
Ukuxinana kweMibhobho | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Ukuxhathisa 4H-N 4H-SI | 0.015~0.028Ω!cm | |||
≥1E5Ω!cm | ||||
Uburhabaxa | I-Polish Ra ≤1nm CMP Ra≤0.5nm | |||
#Izaphulelo ngokukhanya okukhulu | Akukho nanye | I-1 ivumelekile,≤2mm | Ubude obongezelekayo ≤10mm, ubude obunye≤2mm | |
*Iipleyiti zeHex ngokukhanya okuphezulu | Indawo eyongezelekayo ≤1% | Indawo eyongezelekayo ≤ 2% | Indawo eyongezelekayo ≤ 5% | |
*Iindawo zohlobo lwePolytype ngokukhanya okuphezulu kokuqina | Akukho nanye | Indawo eyongezelekayo ≤ 2% | Indawo eyongezelekayo ≤ 5% | |
*&Ukukrwempa ngokukhanya okuphezulu | Imikrwelo emi-3 ukuya kwi-1 x yafer idayamitha yobude obuqokelelweyo | Imikrwelo emi-5 ukuya kwi-1 x yafer idayamitha yobude obuqokelelweyo | Imikrwelo emi-5 ukuya kwi-1 x yafer idayamitha yobude obuqokelelweyo | |
chip edge | Akukho nanye | 3 ivumelekile,≤0.5mm nganye | 5 ivunyelwe ,≤1mm nganye | |
Ungcoliseko ngokukhanya okuphezulu | Akukho nanye
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Intengiso kunye neNkonzo yabaThengi
Ukuthengwa kwezinto
Isebe lokuthenga imathiriyeli linoxanduva lokuqokelela zonke iimathiriyeli ekrwada ezifunekayo ukuvelisa imveliso yakho. Ukulandeleka okupheleleyo kwazo zonke iimveliso kunye nezixhobo, kubandakanywa uhlalutyo lweekhemikhali kunye nomzimba zihlala zikhona.
Umgangatho
Ngexesha nasemva kokwenziwa okanye ukwenziwa kweemveliso zakho, isebe lolawulo lomgangatho libandakanyeka ekuqinisekiseni ukuba zonke izixhobo kunye nokunyamezelana kuyahlangabezana okanye kudlule ingcaciso yakho.
Inkonzo
Siyazingca ngokuba nabasebenzi bobunjineli beentengiso abanamava angaphezu kweminyaka emi-5 kushishino lwesemiconductor. Baqeqeshelwa ukuphendula imibuzo yobugcisa kunye nokubonelela ngeekowuteshini ngexesha elifanelekileyo kwiimfuno zakho.
sisecaleni kwakho nanini na xa unengxaki, kwaye uyisombulule kwiiyure eziyi-10.