I-intshi e-4 Ucoceko oluphezulu lwe-Al2O3 99.999% iSapphire substrate wafer Dia101.6×0.65mmt enoBubude obuPhambili beFlethi

I-intshi ezi-4 Ucoceko oluphezulu Al2O3 99.999% iSapphire substrate wafer Dia101.6×0.65mmt enoMfanekiso oPhambili weFlethi oFakelweyo

Inkcazelo emfutshane:

I-intshi ye-4 (malunga ne-101.6 mm) i-sapphire wafer yi-wafer eyenziwe ngezinto zesafire ezinobubanzi obuyi-intshi ezi-4.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Iimpawu eziqhelekileyo ze-4-intshi yesafire wafers yaziswa ngolu hlobo lulandelayo:

Ukutyeba: Ubukhulu beesafire eziqhelekileyo ziphakathi kwe-0.2 mm kunye ne-2 mm, kwaye ubukhulu obuthile bunokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Umda wokubeka: Kudla ngokubakho icandelo elincinci kumda wewafer elibizwa ngokuba "ngumphetho wokubekwa" okhusela umphezulu we-wafer kunye nomphetho, kwaye uhlala u-amorphous.

Ukulungiswa komphezulu: Iziqwenga zesafire eziqhelekileyo zicolwa ngoomatshini kwaye zigudiswa ngokomatshini ukugudisa umphezulu.

Iipropathi zomphezulu: Umphezulu wee-wafers zesafire uhlala uneempawu ezilungileyo zokubona, ezinje ngokukhanya okuphantsi kunye nesalathiso esisezantsi se-refractive, ukuphucula ukusebenza kwesixhobo.

Usetyenziso

● I-substrate yokukhula ye-III-V kunye ne-II-VI iikhompawundi

● I-Electronics kunye ne-optoelectronics

● izicelo zeIR

● I-Silicon On Sapphire Integrated Circuit(SOS)

● iRadio Frequency Integrated Circuit(RFIC)

Inkcazo

Into	4-intshi C-plane (0001) 650μm Sapphire Wafers
Izinto zeCrystal	I-99,999%, i-High Purity, i-Monocrystalline Al2O3
IBanga	Prime, Epi-Ready
Ukuqhelaniswa nomphezulu	Inqwelomoya (0001)
	I-C-plane off-engile ukuya ku-M-axis 0.2 +/- 0.1 °
Ububanzi	100.0 mm +/- 0.1 mm
Ukutyeba	650 μm +/- 25 μm
Ukuqhelaniswa neFlethi okuPhambili	I-A-plane(11-20) +/- 0.2 °
Ubude beFlethi obuPhambili	30.0 mm +/- 1.0 mm
Icala Elinye Likhazimlisiwe	Umphezulu ongaphambili	I-Epi-ipolishiwe, i-Ra < 0.2 nm (nge-AFM)
(SSP)	Emva koMphezulu	Umhlaba omhle, iRa = 0.8 μm ukuya kwi-1.2 μm
Icala eliphindwe kabini lilungisiwe	Umphezulu ongaphambili	I-Epi-ipolishiwe, i-Ra < 0.2 nm (nge-AFM)
(DSP)	Emva koMphezulu	I-Epi-ipolishiwe, i-Ra < 0.2 nm (nge-AFM)
TTV	< 20 μm
THOBEKA	< 20 μm
WARP	< 20 μm
Ukucoca / ukuPakisha	Ukucoca igumbi le-100 kunye nokupakishwa kwe-vacuum,
	Amaqhekeza angama-25 kwikhasethi enye okanye kwipakethe yesiqwenga esinye.

Sineminyaka emininzi yamava kwishishini lokulungisa isafire.Kubandakanywa imarike yababoneleli baseTshayina, kunye nemarike yeemfuno zamazwe ngamazwe.Ukuba unazo naziphi na iimfuno, nceda uzive ukhululekile ukuqhagamshelana nathi.