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I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation

I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation Umfanekiso obonisiweyo
  • I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation
  • I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation
  • I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation
  • I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation
  • I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation

Inkcazo emfutshane:

I-P-type SiC wafer, 4H/6H-P 3C-N, sisixhobo se-semiconductor esiziisentimitha ezi-6 esinobukhulu obuyi-350 μm kunye nolawulo oluphambili oluthe tyaba, esenzelwe ukusetyenziswa kwe-elektroniki. Eyaziwa ngokuqhuba kwayo ubushushu obuphezulu, i-voltage ephezulu yokuqhekeka, kunye nokumelana namaqondo obushushu aphezulu kunye neendawo ezirhabaxa, le wafer ifanelekile kwizixhobo ze-elektroniki ezisebenzayo kakhulu. I-P-type doping ingenisa imingxunya njengeenkampani eziphambili zokutshaja, okwenza ukuba ilungele ukusetyenziswa kwe-elektroniki yamandla kunye ne-RF. Ulwakhiwo lwayo olomeleleyo luqinisekisa ukusebenza okuzinzileyo phantsi kweemeko ze-voltage ephezulu kunye ne-frequency ephezulu, okwenza ukuba ifaneleke kakuhle kwizixhobo zamandla, ii-elektroniki zobushushu obuphezulu, kunye nokuguqulwa kwamandla okusebenzayo okuphezulu. I-primary flat orientation iqinisekisa ukulungelelaniswa ngokuchanekileyo kwinkqubo yokuvelisa, inika ukuhambelana kokwenziwa kwesixhobo.


Iimbonakalo

Inkcazelo4H/6H-P Uhlobo lweSiC Composite Substrates Itheyibhile yeparameter eqhelekileyo

6 ububanzi be-intshi ye-Silicon Carbide (SiC) Substrate Inkcazo

Ibanga Imveliso ye-MPD engekhoyoIbanga (Z) Ibanga) Imveliso EsemgangathweniIbanga (P) Ibanga) Ibanga elingeyonyani (D Ibanga)
Ububanzi 145.5 mm~150.0 mm
Ubukhulu 350 μm ± 25 μm
Uqeqesho lweWafer -Offi-axis: 2.0°-4.0°ukuya ku-[1120] ± 0.5° kwi-4H/6H-P, Kwi-axis:〈111〉± 0.5° kwi-3C-N
Uxinano lweeMipayipi ezincinci 0 cm-2
Ukuxhathisa uhlobo lwe-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
uhlobo lwe-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Uqhelaniso oluPhambili oluSicaba 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Ubude obuPhambili obuSicaba 32.5 mm ± 2.0 mm
Ubude obuSicaba beSibini 18.0 mm ± 2.0 mm
Ulwazelelelo lweSibini oluSicaba I-silicon ijonge phezulu: 90° CW. ukusuka kwiPrime flat ± 5.0°
Ukukhutshwa komda 3 mm 6 mm
I-LTV/TTV/Isaphetha/I-Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa I-Polish Ra≤1 nm
I-CMP Ra≤0.2 nm I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Akukho nanye Ubude obuqokelelweyo ≤ 10 mm, ubude obunye ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu Akukho nanye Indawo eqokelelweyo≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu Akukho nanye Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho eziphezulu ngokukhanya okunamandla Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm 5 zivumelekile, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon Ngumandla aphezulu Akukho nanye
Ukupakisha Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye

Amanqaku:

※ Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo engabandakanyiyo umphetho. # Imikrwelo kufuneka ijongwe ebusweni be-Si o

I-wafer ye-P-type SiC, 4H/6H-P 3C-N, enobukhulu bayo obuziisentimitha ezi-6 kunye nobukhulu obuzii-350 μm, idlala indima ebalulekileyo kwimveliso yemizi-mveliso yezixhobo ze-elektroniki ezisebenza kakhulu. Ukuqhuba kwayo okugqwesileyo kobushushu kunye nombane oqhekekileyo kwenza ukuba ilungele ukuvelisa izinto ezifana nokutshintsha kwamandla, ii-diode, kunye nee-transistors ezisetyenziswa kwiindawo ezinobushushu obuphezulu njengezithuthi zombane, iigridi zamandla, kunye neenkqubo zamandla avuselelekayo. Amandla e-wafer okusebenza ngokufanelekileyo kwiimeko ezinzima aqinisekisa ukusebenza okuthembekileyo kwizicelo zoshishino ezifuna uxinano lwamandla aphezulu kunye nokusebenza kakuhle kwamandla. Ukongeza, ukujongwa kwayo okuphambili okuthe tyaba kunceda ekulungelelanisweni ngokuchanekileyo ngexesha lokwenziwa kwesixhobo, ukuphucula ukusebenza kakuhle kwemveliso kunye nokuhambelana kwemveliso.

Iingenelo ze-substrates ze-N-type SiC ezidityanisiweyo ziquka

  • Ukuqhuba okuphezulu kobushushu: Ii-wafers ze-P-type SiC zisusa ubushushu ngokufanelekileyo, nto leyo ezenza zibe zilungele ukusetyenziswa kubushushu obuphezulu.
  • I-Voltage ephezulu yokuphazamiseka: Iyakwazi ukumelana neevolthi eziphezulu, iqinisekisa ukuthembeka kwezixhobo ze-elektroniki ezisebenza ngamandla kunye nezixhobo ezinevolthi ephezulu.
  • Ukuchasana neemeko ezinzima: Ihlala ixesha elide kakhulu kwiimeko ezinzima, ezifana namaqondo obushushu aphezulu kunye neendawo ezingcolisayo.
  • Ukuguqulwa kwamandla okusebenzayo: I-P-type doping yenza kube lula ukuphatha amandla ngokufanelekileyo, nto leyo eyenza i-wafer ifaneleke kwiinkqubo zokuguqula amandla.
  • Uqhelaniso oluPhambili oluSicaba: Iqinisekisa ukulungelelaniswa okuchanekileyo ngexesha lokwenziwa, iphucula ukuchaneka kwesixhobo kunye nokuhambelana kwaso.
  • Ulwakhiwo olubhityileyo (350 μm): Ubukhulu obuphezulu be-wafer buxhasa ukuhlanganiswa kwezixhobo ze-elektroniki eziphucukileyo nezingenasithuba.

Ngokubanzi, i-P-type SiC wafer, 4H/6H-P 3C-N, inika uluhlu lweenzuzo ezenza ukuba ifaneleke kakhulu kwizicelo zemizi-mveliso neze-elektroniki. Ukuqhuba kwayo okuphezulu kobushushu kunye ne-voltage yokuqhekeka kwenza ukuba isebenze ngokuthembekileyo kwiindawo ezinobushushu obuphezulu kunye ne-voltage ephezulu, ngelixa ukumelana kwayo neemeko ezinzima kuqinisekisa ukuqina. I-P-type doping ivumela ukuguqulwa kwamandla okusebenzayo, okwenza ukuba ilungele izixhobo ze-elektroniki zamandla kunye neenkqubo zamandla. Ukongeza, ukujongwa okuphambili kwe-wafer kuqinisekisa ukulungelelaniswa okuchanekileyo ngexesha lenkqubo yokuvelisa, okuphucula ukuhambelana kwemveliso. Ngobukhulu be-350 μm, ifanelekile ukudityaniswa kwizixhobo eziphambili nezincinci.

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