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I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga

I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N Ubude obuyi-4 intshi obuyi-350um Ibanga lokuvelisa Ibanga elingaqhelekanga Umfanekiso obonisiweyo
  • I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga
  • I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga
  • I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga
  • I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga

Inkcazo emfutshane:

I-substrate ye-P-type 4H/6H-P 3C-N ye-4-intshi ye-SiC, enobukhulu obuyi-350 μm, sisixhobo se-semiconductor esisebenza kakhulu esisetyenziswa kakhulu ekuvelisweni kwezixhobo ze-elektroniki. Yaziwa ngokuqhuba kwayo ubushushu ngendlela egqwesileyo, i-voltage ephezulu yokuqhekeka, kunye nokumelana namaqondo obushushu aphezulu kunye neendawo ezirhabaxa, le substrate ifanelekile kwizicelo ze-elektroniki zamandla. I-substrate yenqanaba lokuvelisa isetyenziswa kwimveliso enkulu, iqinisekisa ulawulo oluqinileyo lomgangatho kunye nokuthembeka okuphezulu kwizixhobo ze-elektroniki eziphambili. Okwangoku, i-substrate yenqanaba eliyi-dummy isetyenziselwa kakhulu ukulungisa iingxaki zenkqubo, ukulinganiswa kwezixhobo, kunye ne-prototyping. Iimpawu eziphezulu ze-SiC zenza ukuba ibe lukhetho oluhle kwizixhobo ezisebenza kwiindawo ezinobushushu obuphezulu, i-voltage ephezulu, kunye neendawo ezinobuninzi obuphezulu, kubandakanya izixhobo zamandla kunye neenkqubo ze-RF.


Iimbonakalo

I-4inch SiC substrate P-type 4H/6H-P 3C-N parameter table

4 ububanzi be-intshiIsiseko seCarbide (SiC) Inkcazo

Ibanga Imveliso ye-MPD engekhoyo

Ibanga (Z) Ibanga)

 Imveliso Esemgangathweni

Ibanga (P) Ibanga)

  

Ibanga elingeyonyani (D Ibanga)
Ububanzi 99.5 mm~100.0 mm
Ubukhulu 350 μm ± 25 μm
Uqeqesho lweWafer I-axis engaphandle: 2.0°-4.0°ukuya [11]2(-)0] ± 0.5° kwi-4H/6H-P, Oi-n axis:〈111〉± 0.5° ye-3C-N
Uxinano lweeMipayipi ezincinci 0 cm-2
Ukuxhathisa uhlobo lwe-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
uhlobo lwe-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Uqhelaniso oluPhambili oluSicaba 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Ubude obuPhambili obuSicaba 32.5 mm ± 2.0 mm
Ubude obuSicaba beSibini 18.0 mm ± 2.0 mm
Ulwazelelelo lweSibini oluSicaba I-silicon ijonge phezulu: 90° CW. ukusuka kwiPrime flat±5.0°
Ukukhutshwa komda 3 mm 6 mm
I-LTV/TTV/Isaphetha/I-Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa I-Polish Ra≤1 nm
I-CMP Ra≤0.2 nm I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Akukho nanye Ubude obuqokelelweyo ≤ 10 mm, ubude obunye ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu Akukho nanye Indawo eqokelelweyo≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu Akukho nanye Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho eziphezulu ngokukhanya okunamandla Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm 5 zivumelekile, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon Ngumandla aphezulu Akukho nanye
Ukupakisha Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye

Amanqaku:

※Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo engafakwanga umphetho. # Imikrwelo mayijongwe ebusweni be-Si kuphela.

I-substrate ye-P-type 4H/6H-P 3C-N 4-intshi SiC enobukhulu obuyi-350 μm isetyenziswa kakhulu kwimveliso yezixhobo ze-elektroniki nezisebenzisa amandla. Ngombane ogqwesileyo wokushisa, i-voltage ephezulu yokuqhekeka, kunye nokumelana okunamandla kwiindawo ezishushu kakhulu, le substrate ifanelekile kwizixhobo ze-elektroniki ezisebenzisa amandla aphezulu ezifana nezitshintshi ze-voltage ephezulu, ii-inverters, kunye nezixhobo ze-RF. Izixhobo ze-substrate ezisebenzisa amandla aphezulu zisetyenziswa kwimveliso enkulu, ukuqinisekisa ukusebenza kwezixhobo okuthembekileyo nokuchanekileyo, okubaluleke kakhulu kwizixhobo ze-elektroniki ezisebenzisa amandla aphezulu kunye nezicelo ze-frequency ephezulu. Kwelinye icala, izixhobo ze-dummy-grade zisetyenziswa kakhulu ekulinganisweni kwenkqubo, ukuvavanywa kwezixhobo, kunye nophuhliso lweeprototype, ukunceda ukugcina ulawulo lomgangatho kunye nokuhambelana kwenkqubo kwimveliso ye-semiconductor.

IinkcukachaIingenelo ze-N-type SiC composite substrates ziquka

  • Ukuqhuba okuphezulu kobushushu: Ukuchithwa kobushushu ngokufanelekileyo kwenza isiseko sibe sesona sifanelekileyo kwiindlela zokusebenzisa ubushushu obuphezulu kunye namandla aphezulu.
  • I-Voltage ephezulu yokuphazamiseka: Ixhasa ukusebenza kwe-high-voltage, iqinisekisa ukuthembeka kwezixhobo ze-elektroniki kunye nezixhobo ze-RF.
  • Ukuchasana neemeko ezinzima: Ihlala ixesha elide kwiimeko ezinzima ezifana namaqondo obushushu aphezulu kunye neendawo ezingcolisayo, okuqinisekisa ukusebenza okuhlala ixesha elide.
  • Ukuchaneka kweMpahla yeMveliso: Iqinisekisa ukusebenza okusemgangathweni ophezulu nokuthembekileyo kwimveliso enkulu, ifanelekile kwiindlela eziphambili zombane kunye nezicelo zeRF.
  • Uvavanyo lweBanga eliyiMboniso: Ivumela ukulinganiswa kweenkqubo ngokuchanekileyo, uvavanyo lwezixhobo, kunye nomzekelo ngaphandle kokubeka emngciphekweni ii-wafers zezinga lokuvelisa.

 Ngokubanzi, i-substrate ye-P-type 4H/6H-P 3C-N 4-intshi SiC enobukhulu obuyi-350 μm inika iingenelo ezibalulekileyo kwizicelo ze-elektroniki ezisebenzayo kakhulu. Ukuqhuba kwayo okuphezulu kobushushu kunye ne-voltage yokuqhekeka kwenza ukuba ilungele iindawo ezinamandla aphezulu kunye nobushushu obuphezulu, ngelixa ukumelana kwayo neemeko ezinzima kuqinisekisa ukuqina kunye nokuthembeka. I-substrate yenqanaba lokuvelisa iqinisekisa ukusebenza ngokuchanekileyo nangokuhambelanayo kwimveliso enkulu yezixhobo ze-elektroniki zamandla kunye ne-RF. Okwangoku, i-substrate yenqanaba eliyi-dummy ibalulekile ekulinganisweni kwenkqubo, ukuvavanywa kwezixhobo, kunye nokwenza iiprototyping, ixhasa ulawulo lomgangatho kunye nokuhambelana kwimveliso ye-semiconductor. Ezi mpawu zenza i-substrates ze-SiC zibe luncedo kakhulu kwizicelo eziphambili.

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