I-substrate
-
Isiseko seSiC 3inch 350um ubukhulu beHPSI Uhlobo lwePrime Grade Isigaba seDummy
-
I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade ubukhulu can ba ngokwezifiso
-
I-Silicon Carbide eyi-4H-SiC ene-Semi-Insulating Ingot eyi-6 kwi-insulation, i-Dummy Grade
-
Uhlobo lweSiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Uphando / Udidi oluyiDummy
-
I-sapphire ye-6 intshi yeBoule Sapphire engenanto ikristale enye i-Al2O3 99.999%
-
I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo loBulukhuni obuphezulu bokugqwala Ukumelana nokugqwala kwePrime Grade Polishing
-
I-2intshi yeSilicon Carbide Wafer 6H-N Uhlobo lwePrime Grade Research Grade Dummy Grade 330μm 430μm Ubungqingqwa
-
I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade
-
uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
-
I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lemveliso Ibanga elingaqhelekanga
-
I-wafer ye-SiC ye-4H/6H-P eyi-6intshi ye-Zero MPD yebanga leMveliso yeBanga eliyiDummy
-
I-wafer ye-SiC yohlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-6inch 350 μm kunye ne-Primary Flat Orientation