Inxalenye engaphantsi
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I-substrate ye-SiC P-uhlobo lwe-4H/6H-P 3C-N 4inch enobukhulu obungama-350um ibakala leMveliso yodidi lweDummy
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4H/6H-P 6inch SiC wafer Zero MPD ibakala Production IBanga leDummy
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I-P-uhlobo lwe-SiC wafer 4H/6H-P 3C-N 6inch ukutyeba 350 μm kunye nokuqhelaniswa neFlethi ePrayimari
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Inkqubo ye-TVG kwi-quartz sapphire BF33 wafer Iglasi ye-wafer yokubetha
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Ikristale enye yeSilicon wafer Si Substrate Uhlobo N/P Optional Silicon Carbide Wafer
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I-N-Type SiC Composite Substrates Dia6inch Umgangatho ophezulu we-monocrystaline kunye ne-substrate ephantsi yomgangatho
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ISemi-Insulating SiC kwiSi Composite Substrates
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ISemi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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I-Synthetic Sapphire boule Monocrystal Sapphire Blank Diameter kunye nobukhulu bunokwenziwa ngokwezifiso
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N-Udidi lweSiC kwiSi Composite Substrates Dia6inch
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I-substrate ye-SiC i-Dia200mm 4H-N kunye ne-HPSI Silicon carbide
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I-3inch ye-SiC substrate yoMveliso weDiya76.2mm 4H-N