I-2intshi yeSilicon Carbide Wafer 6H-N Uhlobo lwePrime Grade Research Grade Dummy Grade 330μm 430μm Ubungqingqwa

Inkcazo emfutshane:

Kukho iipolymorph ezininzi ezahlukeneyo ze-silicon carbide kwaye i-6H silicon carbide yenye yeepolymorphs eziphantse zibe ngama-200. I-6H silicon carbide yeyona ndlela ixhaphakileyo yokutshintsha ii-silicon carbides zorhwebo. Ii-wafers ze-6H silicon carbide zibaluleke kakhulu. Zingasetyenziswa njengee-semiconductors. Isetyenziswa kakhulu kwizixhobo ezirhabaxa nezisikayo ezifana neediski zokusika ngenxa yokuqina kwayo kunye neendleko eziphantsi zezinto zokwakha. Isetyenziswa kwizixhobo zomzimba ezihlanganisiweyo zanamhlanje kunye neevesti ezikhusela iimbumbulu. Ikwasetyenziswa kwishishini leemoto apho isetyenziselwa ukwenza iidiski zeebhuleki. Kwizicelo ezinkulu ze-foundry, isetyenziselwa ukubamba iintsimbi ezinyibilikayo kwii-crucibles. Ukusetyenziswa kwayo kwizicelo zombane neze-elektroniki kwaziwa kakhulu kangangokuba akudingi mpikiswano. Ngaphezu koko, isetyenziswa kwizixhobo ze-elektroniki ezinamandla, ii-LED, i-astronomy, i-thin filament pyrometry, ubucwebe, i-graphene kunye nemveliso yentsimbi, kunye ne-catalyst. Sinikezela ngee-wafers ze-6H silicon carbide ezinomgangatho owahlukileyo kunye ne-99.99%.

Thumela i-imeyile kuthi

Iimbonakalo

Ezi zilandelayo ziimpawu ze-silicon carbide wafer:

1. I-silicon carbide (SiC) wafer ineempawu ezintle zombane kunye neempawu ezintle zobushushu. I-silicon carbide (SiC) wafer ine-thermal expansion ephantsi.

2. I-silicon carbide (SiC) wafer ineempawu zokuqina ezigqwesileyo. I-silicon carbide (SiC) wafer isebenza kakuhle kumaqondo obushushu aphezulu.

3. I-silicon carbide (SiC) wafer inokumelana kakhulu nokugqwala, ukukhukuliseka kunye ne-oxidation. Ukongeza, i-silicon carbide (SiC) wafer ikwakhazimla ngaphezu kweedayimani okanye i-cubic zirconia.

4. Ukumelana ngcono nemisebe: Ii-SIC wafers zinokumelana okunamandla nemisebe, nto leyo ezenza zifaneleke ukusetyenziswa kwiindawo ezinemitha. Imizekelo ibandakanya i-spacecraft kunye ne-nuclear facilities.
5. Ubulukhuni obuphezulu: Ii-SIC wafers zinzima kune-silicon, nto leyo eyomeleza ukuqina kwee-wafers ngexesha lokucubungula.

6. I-dielectric constant esezantsi: I-dielectric constant yee-SIC wafers iphantsi kuneye-silicon, enceda ekunciphiseni amandla e-parasite kwisixhobo kunye nokuphucula ukusebenza kwe-high-frequency.

I-silicon carbide wafer inezicelo ezininzi

I-SiC isetyenziselwa ukwenza izixhobo ezinamandla aphezulu kakhulu kunye nezixhobo ezinamandla aphezulu ezifana nee-diode, ii-transistors zamandla, kunye nezixhobo ze-microwave ezinamandla aphezulu. Xa kuthelekiswa nezixhobo ze-Si eziqhelekileyo, izixhobo zamandla ezisekwe kwi-SiC zinesantya esiphezulu sokutshintsha i-voltage ephezulu, ukumelana okuphantsi kwe-parasitic, ubungakanani obuncinci, ukupholisa okuncinci okufuneka ngenxa yamandla aphezulu obushushu.
Ngelixa i-Silicon carbide (SiC-6H) - 6H wafer ineempawu ze-elektroniki ezibalaseleyo, i-silicon carbide (SiC-6H) - 6H wafer yeyona ilungiswa lula kwaye ifundwe ngcono.
1. Ii-Power Electronics: Ii-Silicon Carbide Wafers zisetyenziswa ekuvelisweni kwe-Power Electronics, ezisetyenziswa kwiintlobo ngeentlobo zezicelo, kuquka izithuthi zombane, iinkqubo zamandla ahlaziyekayo, kunye nezixhobo zoshishino. Ukuqhuba okuphezulu kobushushu kunye nokulahleka kwamandla okuphantsi kwe-Silicon Carbide kwenza ukuba ibe yinto efanelekileyo kwezi zicelo.
2. Ukukhanya kwe-LED: IiWafers zeSilicon Carbide zisetyenziswa ekuveliseni ukukhanya kwe-LED. Amandla aphezulu eSilicon Carbide enza kube nokwenzeka ukuvelisa ii-LED ezihlala ixesha elide nezihlala ixesha elide kunezixhobo zokukhanyisa zemveli.
3. Izixhobo zeSemiconductor: IiWafers zeSilicon Carbide zisetyenziswa ekuvelisweni kwezixhobo zeSemiconductor, ezisetyenziswa kwiintlobo ngeentlobo zezicelo, kubandakanya unxibelelwano, ikhompyutha, kunye ne-elektroniki yabathengi. Ukuqhuba okuphezulu kobushushu kunye nokulahleka kwamandla okuphantsi kweSilicon Carbide kwenza ukuba ibe yinto efanelekileyo kwezi zicelo.
4. Iiseli zeSolar: IiWafers zeSilicon Carbide zisetyenziswa ekuveliseni iiseli zeSolar. Amandla aphezulu eSilicon Carbide enza kube nokwenzeka ukuvelisa iiseli zeSolar ezihlala ixesha elide nezihlala ixesha elide kuneeseli zeSolar zemveli.
Ngokubanzi, i-ZMSH Silicon Carbide Wafer yimveliso eguquguqukayo nesemgangathweni ophezulu enokusetyenziswa kwiintlobo ngeentlobo zezicelo. Ukuqhuba kwayo okuphezulu kobushushu, ukulahleka kwamandla aphantsi, kunye namandla aphezulu kwenza ukuba ibe yinto efanelekileyo kwizixhobo ze-elektroniki ezishushu kakhulu nezinamandla aphezulu. Nge-Bow/Warp ye-≤50um, i-Surface Roughness ye-≤1.2nm, kunye ne-Resistivity ye-High/Low Resistivity, i-Silicon Carbide Wafer lukhetho oluthembekileyo nolusebenzayo kuyo nayiphi na inkqubo efuna umphezulu othe tyaba nogudileyo.
Imveliso yethu yeSiC Substrate iza nenkxaso yobugcisa epheleleyo kunye neenkonzo ukuqinisekisa ukusebenza kakuhle kunye nokwaneliseka kwabathengi.
Iqela lethu leengcali liyafumaneka ukunceda ekukhetheni imveliso, ekuyifakeni, nasekuyisombululeni.
Sinikezela ngoqeqesho nemfundo malunga nokusetyenziswa nokugcinwa kweemveliso zethu ukunceda abathengi bethu bandise utyalo-mali lwabo.
Ukongeza, sinikezela ngohlaziyo oluqhubekayo lwemveliso kunye nophuculo ukuqinisekisa ukuba abathengi bethu bahlala befikelela kubuchwepheshe bamva nje.