ISubstrate
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I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
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4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
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I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu
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I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP
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8 intshi 200mm iSapphire substrate yesafire wafer obhityileyo ubukhulu 1SP 2SP 0.5mm 0.75mm
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I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.
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I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
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Ikristale enye i-Al2O3 99.999% ii-wafers zesafire zeDia200mm 1.0mm 0.75mm ubukhulu
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I-156mm 159mm 6 intshi yeSapphire Wafer yomphathi we-C-Plane DSP TTV
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I-C/A/M i-axis 4 intshi yamaqhekeza esafire enye ikristale Al2O3,SSP DSP ukuqina okuphezulu kwesapphire substrate
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3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
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I-P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha