Inxalenye engaphantsi
-
ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
-
SiC Ingot 4H-N uhlobo Dummy ibakala 2inch 3inch 4inch 6inch ubukhulu:＞10mm
-
I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
-
3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
-
I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha
-
I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
-
2inch Silicon Carbide Wafer 6H-N Uhlobo lwePrime iBanga loPhando IBanga leDummy iBanga 330μm 430μm Ukutyeba
-
I-2inch ye-silicon carbide substrate 6H-N enamacala amabini akhazimlisiweyo ububanzi 50.8mm ibakala lophando lwemveliso
-
p-uhlobo 4H/6H-P 3C-N UHLOBO I-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
-
I-substrate ye-SiC P-uhlobo lwe-4H/6H-P 3C-N 4inch enobukhulu obungama-350um ibakala leMveliso yodidi lweDummy
-
4H/6H-P 6inch SiC wafer Zero MPD ibakala Production IBanga leDummy
-
I-P-uhlobo lwe-SiC wafer 4H/6H-P 3C-N 6inch ukutyeba 350 μm kunye nokuqhelaniswa neFlethi ePrayimari