I-substrate
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I-12 intshi ye-SIC substrate i-silicon carbide prime grade diameter 300mm enkulu ubukhulu 4H-N Ifanelekile ukusasaza ubushushu besixhobo esinamandla aphezulu
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I-Dia300x1.0mmt Ubungqingqwa beSapphire Wafer C-Plane SSP/DSP
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I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm yePower Electronics
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I-8 intshi 200mm yesafire substrate, i-wafer yesafire ubukhulu obuncinci 1SP 2SP 0.5mm 0.75mm
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I-wafer ye-SiC ye-silicon carbide ye-intshi ezi-8 4H-N uhlobo lwe-0.5mm grade grade yophando lwe-substrate eyenziwe ngokwezifiso
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Iiwafers zesafire zekristale enye i-Al2O3 ezingama-99.999% zeDia200mm ubukhulu obuyi-1.0mm 0.75mm
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I-156mm 159mm I-Sapphire Wafer eyi-intshi ezi-6 ye-C-Plane DSP TTV yomphathi
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I-axis ye-C/A/M ye-intshi ezi-4 ze-sapphire wafers ezinekristale enye i-Al2O3, i-SSP DSP i-substrate yesafire enobunzima obuphezulu
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I-3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulation （HPSI）SiC wafer 350um Dummy grade I-Prime grade
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I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch
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IiWafers zeSiC zeSilicon Carbide ezingama-8 intshi ezingama-200mm Uhlobo lwemveliso 4H-N ubukhulu obungama-500um
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade