I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP

Inkcazelo emfutshane:

I-Shanghai Xinkehui New Material Co., Ltd. inokuvelisa ama-wafers esafire aneendlela ezahlukeneyo zokuqhelaniswa nomphezulu (c, r, a, kunye ne-m-plane), kunye nokulawula i-engile yokunqunyulwa kwe-engile ukuya kwi-0.1 degree.Ngokusebenzisa itekhnoloji yethu yobunini, siyakwazi ukufikelela umgangatho ophezulu ofunekayo kwizicelo ezifana nokukhula kwe-epitaxial kunye ne-wafer bonding.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukwazisa ngebhokisi ye-wafer

Izinto zeCrystal	I-99,999% ye-Al2O3, i-High Purity, i-Monocrystalline, i-Al2O3
Umgangatho weCrystal	Ukubandakanywa, amanqaku ebhloko, amawele, Umbala, amaqamza amancinci kunye namaziko okusasazeka azikho
Ububanzi	2 intshi	3intshi	4intshi	6intshi ～ 12intshi
Ububanzi	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	Ngokuhambelana nezibonelelo zemveliso esemgangathweni
Ukutyeba	430±15µm	550±15µm	650±20µm	Inokwenziwa ngokwezifiso ngumthengi
Ukuqhelaniswa	I-C-plane (0001) ukuya kwi-M-plane (1-100) okanye i-A-plane (1 1-2 0) 0.2±0.1 ° /0.3±0.1 °, i-R-plane (1-1 0 2), i-A-plane (1 1-2 0 ), M-inqwelomoya (1-1 0 0), Naluphi na Ukuqhelaniswa , Nayiphi na iengile
Ubude beflethi bokuqala	16.0±1mm	22.0±1.0mm	32.5±1.5 mm	Ngokuhambelana nezibonelelo zemveliso esemgangathweni
Ukuqhelaniswa neflethi ephambili	I-A-plane (1 1-2 0 ) ± 0.2 °
TTV	≤10µm	≤15µm	≤20µm	≤30µm
LTV	≤10µm	≤15µm	≤20µm	≤30µm
TIR	≤10µm	≤15µm	≤20µm	≤30µm
THOBEKA	≤10µm	≤15µm	≤20µm	≤30µm
I-Wap	≤10µm	≤15µm	≤20µm	≤30µm
Umphezulu ongaphambili	I-Epi-Polished (Ra< 0.2nm)

*Isaphetha: Ukutenxa kwindawo esembindini yomphezulu we-wafer ekhululekileyo, engabanjwanga ukusuka kwinqwelo-moya yereferensi, apho inqwelo-moya yereferensi ichazwa ziikona ezintathu zonxantathu olinganayo.

*I-Warp: Umahluko phakathi kowona mkhulu kunye nomgama omncinci womphezulu ophakathi we-wafer ekhululekileyo, engabanjwanga kwinqwelo-moya echazwe ngasentla.

Iimveliso ezikumgangatho ophezulu kunye neenkonzo zezixhobo ze-semiconductor zesizukulwana esilandelayo kunye nokukhula kwe-epitaxial:

Iqondo eliphezulu lokutya (i-TTV elawulwayo, isaphetha, i-warp njl.

Ukucocwa komgangatho ophezulu (ungcoliseko lwamasuntswana aphantsi, ukungcoliseka kwentsimbi ephantsi)

I-substrate yokugrumba, i-grooving, ukusika, kunye nokupolisha ngasemva

Ukuqhotyoshelwa kwedatha efana nokucoceka kunye nokumila kwe-substrate (ukhetho)

Ukuba unesidingo sesapphire substrates, nceda uzive ukhululekile ukuqhagamshelana:

imeyile:eric@xkh-semitech.com+86 158 0194 2596 /doris@xkh-semitech.com+86 187 0175 6522

Siza kubuyela kuwe ngokukhawuleza!