SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch ekhoyo

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch Umfanekiso okhoyo

Inkcazelo emfutshane:

Sinikezela ngokhetho olwahlukeneyo olukumgangatho ophezulu we-SiC (i-Silicon Carbide) wafers, ngokugxininise ngakumbi kwi-N-uhlobo lwe-4H-N kunye ne-6H-N yama-wafers, alungele ukusetyenziswa kwi-optoelectronics ephezulu, izixhobo zamandla, kunye neendawo ezinobushushu obuphezulu. . Ezi ziqwenga zohlobo lwe-N zaziwa ngokusebenza kwazo okukhethekileyo kwe-thermal, ukuzinza kombane okugqwesileyo, kunye nokuqina okumangalisayo, kubenza bagqibelele kwizicelo ezisebenza kakhulu ezifana ne-elektroniki yamandla, iinkqubo zokuqhuba izithuthi zombane, ii-inverters zamandla avuselelekayo, kunye nezixhobo zombane zamashishini. Ukongeza kwiminikelo yethu yohlobo lwe-N, sikwabonelela nge-P-uhlobo lwe-4H / 6H-P kunye ne-3C ye-SiC wafers kwiimfuno ezikhethekileyo, kubandakanywa i-high-frequency kunye nezixhobo ze-RF, kunye nezicelo ze-photonic. Iifestile zethu zifumaneka ngobukhulu ukusuka kwi-2 intshi ukuya kwi-8 intshi, kwaye sibonelela ngezisombululo ezilungiselelwe ukuhlangabezana neemfuno ezithile zamacandelo ahlukeneyo amashishini. Ngeenkcukacha ezithe vetshe okanye imibuzo, nceda uzive ukhululekile ukuqhagamshelana nathi.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

I-4H-N kunye ne-6H-N (i-N-uhlobo lwe-SiC Wafers)

Isicelo:Isetyenziswa ikakhulu kumbane wamandla, i-optoelectronics, kunye nezicelo zobushushu obuphezulu.

Uluhlu lweDiameter:50.8 mm ukuya kwi-200 mm.

Ukutyeba:350 μm ± 25 μm, kunye nobukhulu obukhethiweyo be-500 μm ± 25 μm.

Ukuxhathisa:N-uhlobo 4H / 6H-P: ≤ 0.1 Ω · cm (Z-grade), ≤ 0.3 Ω · cm (P-grade); N-uhlobo lwe-3C-N: ≤ 0.8 mΩ · cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Uburhabaxa:Ra ≤ 0.2 nm (CMP okanye MP).

Uxinaniso lweMibhobho (MPD):<1 iya/cm².

TTV: ≤ 10 μm kuzo zonke iidiameters.

I-Wap: ≤ 30 μm (≤ 45 μm kwii-intshi ezisi-8).

Ukukhutshelwa ngaphandle komda:3 mm ukuya kwi-6 mm ngokuxhomekeke kuhlobo lwe-wafer.

Ukupakishwa:Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba.

Ohter ubungakanani obukhoyo 3inch 4inch 6inch 8inch

HPSI

Isicelo:Isetyenziselwa izixhobo ezifuna ukuxhathisa okuphezulu kunye nokusebenza okuzinzileyo, njengezixhobo zeRF, usetyenziso lwefotonic, kunye nezinzwa.

Uluhlu lweDiameter:50.8 mm ukuya kwi-200 mm.

Ukutyeba:Ubungqingqwa obusemgangathweni obuyi-350 μm ± 25 μm kunye neenketho zamawafa atyebileyo ukuya kuma-500 μm.

Uburhabaxa:Ra ≤ 0.2 nm.

Uxinaniso lweMibhobho (MPD): ≤ 1 nge/cm².

Ukuxhathisa:Ukumelana okuphezulu, okuqhelekileyo kusetyenziswa kwizicelo ze-semi-insulating.

I-Wap: ≤ 30 μm (ubukhulu obuncinci), ≤ 45 μm kububanzi obukhulu.

TTV: ≤ 10 μm.

Ohter ubungakanani obukhoyo 3inch 4inch 6inch 8inch

4H-P,6H-P&3C Iqhekeza leSiC(P-uhlobo lweSiC wafers)

Isicelo:Ngokuyintloko kumandla kunye nezixhobo eziphezulu ze-frequency.

Uluhlu lweDiameter:50.8 mm ukuya kwi-200 mm.

Ukutyeba:350 μm ± 25 μm okanye iinketho ezenzelwe wena.

Ukuxhathisa:I-P-uhlobo 4H / 6H-P: ≤ 0.1 Ω · cm (Z-grade), ≤ 0.3 Ω · cm (P-grade).

Uburhabaxa:Ra ≤ 0.2 nm (CMP okanye MP).

Uxinaniso lweMibhobho (MPD):<1 iya/cm².

TTV: ≤ 10 μm.

Ukukhutshelwa ngaphandle komda:3 mm ukuya kwi-6 mm.

I-Wap: ≤ 30 μm ngobukhulu obuncinci, ≤ 45 μm ngobukhulu obukhulu.

Ohter ubungakanani obukhoyo 3inch 4inch 6inch5×5 10×10

Itheyibhile yeeParamitha zeDatha engaphelelanga

Ipropati	2 intshi		3intshi		4intshi	6intshi	8intshi
Uhlobo	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Ububanzi	50.8 ± 0.3 mm		76.2±0.3mm		100±0.3mm	150±0.3mm	200 ± 0.3 mm
Ukutyeba	330 ± 25 um		350 ±25 um		350 ±25 um	350 ±25 um	350 ±25 um
	350±25um		500±25um		500±25um	500±25um	500±25um
	okanye yenziwe ngokwezifiso		okanye yenziwe ngokwezifiso		okanye yenziwe ngokwezifiso	okanye yenziwe ngokwezifiso	okanye yenziwe ngokwezifiso
Uburhabaxa	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
I-Wap	≤ 30um		≤ 30um		≤ 30um	≤ 30um	≤45um
TTV	≤ 10um		≤ 10um		≤ 10um	≤ 10um	≤ 10um
Krwela/Yemba	CMP/MP
MPD	<1ea/cm-2	<1ea/cm-2		<1ea/cm-2		<1ea/cm-2		<1ea/cm-2
Ubume	Round, Flat 16mm;OF ubude 22mm; OF Ubude 30/32.5mm; YOBUDE 47.5mm; INKCAZELO; INKCAZELO;
Bevel	45 °, SEMI Spec; C Imilo
IBanga	Ibanga lemveliso yeMOS&SBD; Ibakala lophando; Ibakala leDummy, iBanga leSiphene sembewu
Amagqabantshintshi	Ububanzi, ukutyeba, ukuziqhelanisa, iinkcukacha ezingentla zingenziwa ngokwesicelo sakho

Usetyenziso

·I-Electronics yamandla

Ii-wafers ze-SiC zodidi lwe-N zibalulekile kumandla ombane wezixhobo zombane ngenxa yokukwazi ukuphatha amandla ombane aphezulu kunye nokuphezulu kwangoku. Zidla ngokusetyenziswa kwiziguquli zamandla, ii-inverters, kunye neemoto zokuqhuba kumashishini afana namandla ahlaziyekayo, izithuthi zombane, kunye ne-automation yemizi-mveliso.

· Optoelectronics
Uhlobo lwe-N izixhobo ze-SiC, ngokukodwa kwizicelo ze-optoelectronic, ziqeshwe kwizixhobo ezifana ne-light-emitting diodes (LEDs) kunye ne-laser diodes. Ukuqhuba kwabo okuphezulu kwe-thermal kunye ne-bandgap ebanzi kubenza balungele izixhobo eziphezulu ze-optoelectronic.

·Izicelo zobushushu obuphezulu
I-4H-N 6H-N ii-SiC zafers zifaneleke kakuhle kwiindawo ezinobushushu obuphezulu, njengakwi-sensors kunye nezixhobo zamandla ezisetyenziswa kwi-aerospace, i-automotive, kunye ne-industrial applications apho ukutshatyalaliswa kobushushu kunye nokuzinza kumaqondo aphezulu aphezulu kubaluleke kakhulu.

·Izixhobo zeRF
I-4H-N 6H-N ii-SiC wafers zisetyenziswa kwii-radio frequency (RF) izixhobo ezisebenza kwii-high-frequency ranges. Zisetyenziswa kwiinkqubo zonxibelelwano, iteknoloji ye-radar, kunye nonxibelelwano lwesathelayithi, apho kufuneka amandla aphezulu kunye nokusebenza.

·Usetyenziso lweFotonic
Kwiifotonics, ii-wafers ze-SiC zisetyenziselwa izixhobo ezinje ngeefoto kunye neemodyuli. Iimpawu ezizodwa zezinto zivumela ukuba zisebenze ekuveliseni ukukhanya, ukumodareyitha, kunye nokufumanisa kwiinkqubo zonxibelelwano olubonakalayo kunye nezixhobo zokucinga.

·Izivamvo
Ii-wafers ze-SiC zisetyenziswa kwiintlobo ezahlukeneyo ze-sensor applications, ngakumbi kwiindawo ezinzima apho ezinye izinto zinokusilela. Oku kubandakanya ubushushu, uxinzelelo, kunye nezinzwa zeekhemikhali, eziyimfuneko kwimimandla efana neemoto, ioyile kunye negesi, kunye nokubeka iliso kokusingqongileyo.

·IiNkqubo zokuQhuba iZithuthi zoMbane
I-teknoloji ye-SiC idlala indima ebalulekileyo kwizithuthi zombane ngokuphucula ukusebenza kakuhle kunye nokusebenza kweenkqubo zokuqhuba. Ngee-semiconductors zamandla e-SiC, izithuthi zombane zinokufikelela ubomi obungcono bebhetri, amaxesha okutshaja ngokukhawuleza, kunye nokusebenza kakuhle kwamandla.

·IiSensors eziPhezulu kunye nabaguquleli beFotonic
Kwitekhnoloji ye-sensor ephucukileyo, ii-wafers ze-SiC zisetyenziselwa ukudala izinzwa ezichanekileyo ezichanekileyo kwizicelo kwiirobhothi, izixhobo zonyango, kunye nokubeka iliso kwendalo. Kwiziguquli zefotonic, iipropathi ze-SiC zisetyenziselwa ukwenza uguqulo olusebenzayo lwamandla ombane kwiimpawu ze-optical, ezibaluleke kakhulu kunxibelelwano lwe-telecommunications kunye ne-intanethi ye-intanethi ye-intanethi.

Q&A

Q:Yintoni i-4H kwi-4H SiC?
A: "4H" kwi-4H SiC ibhekisa kulwakhiwo lwekristale yesilicon carbide, ngokukodwa ifom ye-hexagonal enemigangatho emine (H). I-"H" ibonisa uhlobo lwe-polytype ene-hexagonal, iyahlula kwezinye iipolytypes ze-SiC ezifana ne-6H okanye i-3C.

Q:Yintoni i-thermal conductivity ye-4H-SiC?
A:I-thermal conductivity ye-4H-SiC (i-Silicon Carbide) malunga ne-490-500 W / m·K kwiqondo lokushisa. Oku kuqhuba kwe-thermal ephezulu kwenza kube yinto efanelekileyo kwizicelo kumbane we-elektroniki kunye neendawo zokushisa eziphezulu, apho ukutshatyalaliswa kobushushu kubalulekile.

Ngaphambili: Ityhubhu yeSapphire echanekileyo yokuvelisa ityhubhu ecacileyo Al2O3 ikristale exhathisayo ukumelana nobunzima obuphezulu EFG/KY ngokwesiko lokugudisa ububanzi.

Okulandelayo:

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