3inch Dia76.2mm SiC substrates HPSI Prime Research kunye nebakala Dummy

Inkcazelo emfutshane:

I-Semi-insulating substrate ibhekiselele kwi-resistivity ephezulu kune-100000Ω-cm ye-silicon carbide substrate, esetyenziswa ikakhulu kukwenziwa kwezixhobo zerediyo ze-microwave ze-gallium nitride, sisiseko sonxibelelwano olungenazingcingo.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide substrates inokwahlulwa ibe ngamacandelo amabini

I-conductive substrate: ibhekisela kwi-resistiveivity ye-15 ~ 30mΩ-cm ye-silicon carbide substrate.I-silicon carbide epitaxial wafer ekhuliswe kwi-conductive silicon carbide substrate inokwenziwa ngakumbi kwizixhobo zamandla, ezisetyenziswa ngokubanzi kwizithuthi zamandla amatsha, i-photovoltaics, iigridi ezihlakaniphile, kunye nothutho lukaloliwe.

I-Semi-insulating substrate ibhekiselele kwi-resistivity ephezulu kune-100000Ω-cm ye-silicon carbide substrate, esetyenziswa ikakhulu kukwenziwa kwezixhobo zerediyo ze-microwave ze-gallium nitride, sisiseko sonxibelelwano olungenazingcingo.

Liyinxalenye esisiseko kwinkalo yonxibelelwano lwamacingo.

I-silicon carbide conductive kunye ne-semi-insulating substrates zisetyenziswa kuluhlu olubanzi lwezixhobo zombane kunye nezixhobo zamandla, kubandakanywa kodwa kungaphelelanga koku kulandelayo:

Izixhobo eziphezulu ze-semiconductor (i-conductive): I-Silicon carbide substrates ine-high breakdown field field kunye ne-thermal conductivity, kwaye ifanelekile ukuveliswa kwe-transistors yamandla aphezulu kunye ne-diode kunye nezinye izixhobo.

Izixhobo zombane ze-RF (ezifakwe kwi-semi-insulated): I-Silicon Carbide substrates inesantya esiphezulu sokutshintsha kunye nokunyamezela umbane, zilungele usetyenziso olunjenge-RF iamplifi zamandla, izixhobo ze-microwave kunye nokutshintsha amaza omoya aphezulu.

Izixhobo ze-Optoelectronic (i-semi-insulated): I-Silicon carbide substrates ine-gap ebanzi yamandla kunye nokuzinza okuphezulu kwe-thermal, ifanelekile ukwenza i-photodiodes, iiseli zelanga kunye ne-laser diode kunye nezinye izixhobo.

Izinzwa zobushushu (i-conductive): I-Silicon carbide substrates ine-conductivity ephezulu ye-thermal kunye nokuzinza kwe-thermal, ifanelekile ukuveliswa kweenzwa eziphezulu zokushisa kunye nezixhobo zokulinganisa ukushisa.

Inkqubo yokuvelisa kunye nokusetyenziswa kwe-silicon carbide conductive kunye ne-semi-insulating substrates inoluhlu olubanzi lwamasimi kunye nezinto ezinokubakho, zibonelela ngamathuba amatsha okuphuhliswa kwezixhobo zombane kunye nezixhobo zamandla.

Idayagram eneenkcukacha

Ibanga leDummy (1)
Ibakala leDummy (2)
Ibakala leDummy (3)

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