I-LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6inch Orientaiton Y-42°/36°/108° Ubukhulu 250-500um

Inkcazo emfutshane:

Ii-wafer zeLiTaO₃ zimele inkqubo ebalulekileyo yezinto ze-piezoelectric kunye ne-ferroelectric, ezibonisa ii-coefficients ze-piezoelectric ezibalaseleyo, uzinzo lobushushu, kunye neempawu ze-optical, ezenza zibe yeyona nto ibalulekileyo kwiifilitha ze-surface acoustic wave (SAW), ii-resonators ze-bulk acoustic wave (BAW), ii-optical modulators, kunye nee-infrared detectors. I-XKH igxile kwi-R&D ye-wafer ekumgangatho ophezulu kunye nemveliso, isebenzisa iinkqubo eziphambili ze-Czochralski (CZ) crystal growth kunye ne-liquid phase epitaxy (LPE) ukuqinisekisa i-crystalline homogeneity ephezulu kunye noxinano lwe-defect <100/cm².

I-XKH ibonelela ngee-wafer ze-LiTaO₃ eziyi-3-intshi, eziyi-4-intshi, kunye nezi-6-intshi ezineendlela ezahlukeneyo ze-crystallographic (i-X-cut, i-Y-cut, i-Z-cut), ezixhasa unyango lwe-doping olulungiselelwe wena (i-Mg, i-Zn) kunye ne-poling ukuhlangabezana neemfuno ezithile zesicelo. I-dielectric constant yesixhobo (ε~40-50), i-piezoelectric coefficient (d₃₃~8-10 pC/N), kunye nobushushu beCurie (~600°C) zimisela i-LiTaO₃ njengesiseko esikhethwayo sezihluzi ezisebenzisa i-frequency ephezulu kunye nee-sensors zokuchaneka.

Ukuveliswa kwethu okudityaniswe ngokuthe nkqo kugubungela ukukhula kwekristale, ukucocwa, ukupolisha, kunye nokufakwa kwefilimu encinci, kunye nomthamo wemveliso wenyanga odlula ii-wafers ezingama-3,000 zokubonelela ngeenkonzo zonxibelelwano ze-5G, izixhobo ze-elektroniki zabathengi, ii-photonics, kunye namashishini okhuselo. Sinikezela ngeengcebiso zobugcisa ezibanzi, ukuchazwa kweesampuli, kunye neenkonzo zeprototyping eziphantsi ukubonelela ngezisombululo zeLiTaO₃ ezilungiselelweyo.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Igama	I-LiTaO3 yebanga lokubona	Inqanaba letafile yesandi iLiTaO3
I-Axial	Ukusika okungu-Z + / - 0.2 °	36 ° ukusika u-Y / 42 ° ukusika u-Y / X ukusika(+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Indiza yeDatum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Ubukhulu	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
I-TTV	≤ 10um	≤ 10um
Ubushushu beCurie	605 °C + / - 0.7 °C (indlela ye-DTA)	605 °C + / -3 °C (indlela ye-DTA
Umgangatho womphezulu	Ukupolisha okumacala amabini	Ukupolisha okumacala amabini
Imiphetho enemiphetho emincinci	ukujikeleza komphetho	ukujikeleza komphetho

Iimpawu eziphambili

1. Ulwakhiwo lweCrystal kunye nokusebenza kombane

· Uzinzo lweCrystallographic: 100% 4H-SiC polytype dominance, akukho zi-inclusions ezininzi ze-crystalline (umz., 6H/15R), kunye ne-XRD rocking curve epheleleyo kwi-half-maximum (FWHM) ≤32.7 arcsec.
· UkuHamba Okuphezulu Kokuthwala: UkuHamba kwee-elektroni ezingama-5,400 cm²/V·s (4H-SiC) kunye nokuHamba kwemingxuma engama-380 cm²/V·s, okuvumela uyilo lwezixhobo ezisebenzisa i-frequency ephezulu.
·Ukuqina kwemitha: Imelana nokukhanyiswa kwemitha ye-neutron ye-1 MeV kunye nomda womonakalo wokufuduka we-1×10¹⁵ n/cm², ifanelekile kwizixhobo zeenqwelo-moya kunye nezenyukliya.

2. Iipropati zobushushu kunye nezoomatshini

· Ukuqhuba okungaqhelekanga kobushushu: 4.9 W/cm·K (4H-SiC), okuphindwe kathathu kune-silicon, okuxhasa ukusebenza okungaphezulu kwama-200°C.
· I-Coefficient Yokwandisa Ubushushu Obuphantsi: I-CTE ye-4.0×10⁻⁶/K (25–1000°C), iqinisekisa ukuhambelana nokupakishwa okusekwe kwi-silicon kwaye inciphisa uxinzelelo lobushushu.

3. Ulawulo olugqibeleleyo kunye nokuCwangcisa ngokuchanekileyo
.
· Uxinano lweMicropipe: <0.3 cm⁻² (ii-wafers ezi-8-intshi), uxinano lwe-dislocation <1,000 cm⁻² (kuqinisekiswe nge-KOH etching).
· Umgangatho womphezulu: I-CMP-polished ukuya kwi-Ra <0.2 nm, ihlangabezana neemfuno ze-EUV lithography-grade flatness.

Izicelo eziphambili

Idomeyini	Iziganeko zesicelo	Iingenelo zobugcisa
Unxibelelwano lwe-Optical	Iimodyuli ze-100G/400G ze-laser, ii-silicon photonics hybrid	Ii-substrates zembewu ye-InP zivumela i-bandgap ethe ngqo (1.34 eV) kunye ne-heteroepitaxy esekelwe kwi-Si, nto leyo enciphisa ukulahleka kwe-optical coupling.
Iimoto Ezintsha Zamandla	Ii-inverters ze-800V eziphezulu ze-voltage, iitshaja ezikwibhodi (OBC)	Ii-substrates ze-4H-SiC zimelana ne->1,200 V, nto leyo enciphisa ilahleko zokuqhuba nge-50% kunye nomthamo wenkqubo nge-40%.
Unxibelelwano lwe-5G	Izixhobo ze-RF ze-Millimeter-wave (PA/LNA), izixhobo zokukhulisa amandla zesikhululo esisezantsi	Ii-substrates ze-SiC ezizi-semi-insulating (resistivity >10⁵ Ω·cm) zivumela ukuhlanganiswa kwe-passive ye-high-frequency (60 GHz+).
Izixhobo zeMveliso	Izinzwa zobushushu obuphezulu, ii-transformers zangoku, iimonitha ze-reactor zenyukliya	Ii-substrates zembewu ye-InSb (0.17 eV bandgap) zinika uvakalelo lwemagnethi olufikelela kwi-300%@10 T.

IiWafers zeLiTaO₃ - Iimpawu eziphambili

1. Ukusebenza kwePiezoelectric okuBalaseleyo

· Ii-coefficients eziphezulu ze-piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) zivumela izixhobo ze-SAW/BAW ezisebenza rhoqo ezinelahleko yokufakelwa <1.5dB kwiifilitha ze-5G RF

· Ukudibanisa okugqwesileyo kwe-electromechanical kuxhasa uyilo lwe-wide-bandwidth (≥5%) lwezicelo ze-sub-6GHz kunye ne-mmWave

2. Iipropati zoKubona

· Ukucaca kwe-Broadband (>70% yokudluliselwa ukusuka kwi-400-5000nm) kwiimodulators ze-electro-optic ezifikelela kwi-bandwidth ye->40GHz

· Ubuthathaka obuqinileyo bokukhanya obungengomgca (χ⁽²⁾~30pm/V) bunceda ukuveliswa kwe-harmonic yesibini (SHG) ngokufanelekileyo kwiinkqubo ze-laser

3. Uzinzo lweNdalo

· Ubushushu obuphezulu beCurie (600°C) bugcina impendulo ye-piezoelectric kwiindawo ezikumgangatho weemoto (-40°C ukuya kwi-150°C)

· Ukungakwazi kweekhemikhali ukumelana nee-asidi/ii-alkali (pH1-13) kuqinisekisa ukuthembeka kwizicelo ze-sensor zoshishino

4. Amandla okwenza ngokwezifiso

· Ubunjineli bokuqhelanisa: X-cut (51°), Y-cut (0°), Z-cut (36°) kwiimpendulo zepiezoelectric ezenzelwe wena.

· Iindlela zokusebenzisa i-doping: I-Mg-doped (ukumelana nomonakalo we-optical), i-Zn-doped (i-d₃₃ ephuculweyo)

· Ukugqitywa komphezulu: Ukupholisha okulungele i-Epitaxial (Ra<0.5nm), i-ITO/Au metallization

IiWafers zeLiTaO₃ - Izicelo eziphambili

1. Iimodyuli zeRF Front-End

· Izihluzi ze-5G NR SAW (Ibhendi n77/n79) ezine-coefficient yobushushu be-frequency (TCF) <|-15ppm/°C|

· Iiresonator ze-BAW ezibanzi kakhulu ze-WiFi 6E/7 (5.925-7.125GHz)

2. Iifotoniki eziDibeneyo

· Iimodulators zeMach-Zehnder ezinesantya esiphezulu (>100Gbps) zonxibelelwano oluhambelanayo lwe-optical

· Ii-QWIP infrared detectors ezine-cutoff wavelengths ezihlengahlengiswayo ukusuka kwi-3-14μm

3. Izixhobo zombane zeemoto

· Izinzwa zokupaka ze-Ultrasonic ezine-frequency yokusebenza engaphezulu kwe-200kHz

· Iitransducer zeTPMS piezoelectric ezisindayo kwiqondo lobushushu eliphakathi kwe -40°C ukuya kwi-125°C

4. Iinkqubo zoKhuselo

· Izihluzi ze-EW receiver ezinokulahlwa ngaphandle kwebhendi engaphezulu kwe-60dB

· Iifestile ze-IR ezifuna imijukujelwa ezithumela imitha ye-MWIR eyi-3-5μm

5. Iiteknoloji Ezisakhasayo

· Ii-transducers ze-optomechanical quantum zokuguqula i-microwave ibe yi-optical

· Ii-PMUT arrays ze-medical ultrasound imaging (isisombululo se->20MHz)

IiWafers zeLiTaO₃ - Iinkonzo zeXKH

1. Ulawulo lweCandelo loNikezelo

· Ukulungiswa kwebhowule ukuya kwiwafer kunye nexesha lokunikezelwa kweenkonzo zeeveki ezi-4 ngokweemfuno ezisemgangathweni

· Imveliso ephuculiweyo ngexabiso inika inzuzo yexabiso eliyi-10-15% xa kuthelekiswa nabakhuphisana nabo

2. Izisombululo ezenziwe ngokwezifiso

· Ukucheba okucwangcisiweyo ngokwendlela ethile: 36°±0.5° Y-cut ukuze kusebenze kakuhle i-SAW

· Izinto ezixutyiweyo: I-MgO (5mol%) ye-doping yezicelo ze-optical

Iinkonzo zokwenziwa kwesinyithi: Cr/Au (100/1000Å) iipateni ze-electrode

3. Inkxaso yoBugcisa

· Ukuchazwa kwezinto: ii-XRD rocking curves (FWHM<0.01°), uhlalutyo lomphezulu we-AFM

· Ukulinganisa isixhobo: Ukumodela kwe-FEM kokwenziwa ngcono koyilo lwesihluzi se-SAW

Isiphelo

Ii-wafer zeLiTaO₃ ziyaqhubeka nokwenza kube lula ukuqhubela phambili kwezobuchwepheshe kunxibelelwano lwe-RF, ii-photonics ezidibeneyo, kunye nee-sensors ezingqongileyo ezingqongqo. Ubuchule be-XKH kwizinto eziphathekayo, ukuchaneka kwemveliso, kunye nenkxaso yobunjineli bezicelo zinceda abathengi ukuba boyise imingeni yoyilo kwiinkqubo ze-elektroniki zesizukulwana esilandelayo.