I-LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ye-5G/6G Communications

Inkcazo emfutshane:

I-LiTaO3 Wafer (i-lithium tantalate wafer), into ebalulekileyo kwi-semiconductors yesizukulwana sesithathu kunye ne-optoelectronics, isebenzisa ubushushu bayo obuphezulu beCurie (610°C), uluhlu olubanzi lokucaca (0.4–5.0 μm), i-piezoelectric coefficient ephezulu (d33 > 1,500 pC/N), kunye nokulahleka okuphantsi kwe-dielectric (tanδ < 2%)ukuguqula unxibelelwano lwe-5G, ukuhlanganiswa kwe-photonic, kunye nezixhobo ze-quantum. Sisebenzisa ubuchwepheshe bokwenziwa obuphambili obufana nokuthuthwa komphunga ngokwasemzimbeni (PVT)kunye ne-chemical vapor deposition (CVD), i-XKH ibonelela ngee-X/Y/Z-cut, 42°Y-cut, kunye nee-periodicly poled (PPLT)wafers kwiifomathi ze-2–8-intshi, ezibonisa uburhabaxa bomphezulu (Ra) <0.5 nm kunye noxinano lwe-micropipe <0.1 cm⁻². Iinkonzo zethu ziquka i-Fe doping, ukunciphisa iikhemikhali, kunye nokuhlanganiswa kwe-Smart-Cut okwahlukeneyo, ukujongana nezihluzi ze-optical ezisebenzayo eziphezulu, ii-infrared detectors, kunye nemithombo yokukhanya ye-quantum. Le nto iqhuba impumelelo kwi-miniaturization, ukusebenza rhoqo, kunye nokuzinza kobushushu, ikhawulezisa ukutshintshwa kwekhaya kwiiteknoloji ezibalulekileyo.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Igama	I-LiTaO3 yebanga lokubona	Inqanaba letafile yesandi iLiTaO3
I-Axial	Ukusika okungu-Z + / - 0.2 °	36 ° ukusika u-Y / 42 ° ukusika u-Y / X ukusika (+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Indiza yeDatum	22mm + / - 2mm	22mm + /-2mm 32mm + /-2mm
Ubukhulu	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
I-TTV	≤ 10um	≤ 10um
Ubushushu beCurie	605 °C + / - 0.7 °C (indlela ye-DTA)	605 °C + / -3 °C (indlela ye-DTA
Umgangatho womphezulu	Ukupolisha okumacala amabini	Ukupolisha okumacala amabini
Imiphetho enemiphetho emincinci	ukujikeleza komphetho	ukujikeleza komphetho

Iimpawu eziphambili

1. Ukusebenza kombane kunye nokubona
· I-Electro-Optic Coefficient: i-r33 ifikelela kwi-30 pm/V (X-cut), iphezulu nge-1.5× kune-LiNbO3, ivumela i-ultra-wideband electro-optic modulation (>40 GHz bandwidth).
· Impendulo ye-Broad Spectral: Uluhlu lokudluliselwa kwe-transmission luyi-0.4–5.0 μm (ubukhulu obuyi-8 mm), kunye nomphetho wokufunxwa kwe-ultraviolet ophantsi njenge-280 nm, ofanelekileyo kwiilaser ze-UV kunye nezixhobo ze-quantum dot.
· I-Pyroelectric Coefficient ephantsi: dP/dT = 3.5×10⁻⁴ C/(m²·K), eqinisekisa uzinzo kwiisensa ze-infrared ezishushu kakhulu.

2. Iipropati zobushushu nezoomatshini
· Ukuqhuba okuphezulu kobushushu: 4.6 W/m·K (X-cut), okuphindwe kane kune-quartz, okuxhasa ukujikeleza kobushushu okungu -200–500°C.
· I-Coefficient yokwandisa ubushushu obuphantsi: CTE = 4.1×10⁻⁶/K (25–1000°C), iyahambelana nokupakishwa kwe-silicon ukunciphisa uxinzelelo lobushushu.
3. Ulawulo olugqibeleleyo kunye nokuCwangcisa ngokuchanekileyo
· Uxinano lweMicropipe: <0.1 cm⁻² (ii-wafers ezi-8-intshi), uxinano lwe-dislocation <500 cm⁻² (kuqinisekiswe nge-KOH etching).
· Umgangatho womphezulu: I-CMP-polished ukuya kwi-Ra <0.5 nm, ihlangabezana neemfuno ze-EUV lithography-grade flatness.

Izicelo eziphambili

Idomeyini	Iziganeko zesicelo	Iingenelo zobugcisa
Unxibelelwano lwe-Optical	Ii-laser ze-DWDM ze-100G/400G, iimodyuli ze-silicon photonics hybrid	Ukudluliselwa kwe-spectral ebanzi ye-LiTaO3 wafer kunye nokulahleka kwe-waveguide ephantsi (α <0.1 dB/cm) kuvumela ukwandiswa kwe-C-band.
Unxibelelwano lwe-5G/6G	Izihluzi ze-SAW (1.8–3.5 GHz), izihluzi ze-BAW-SMR	Iiwafers ezisikiweyo ezingama-42°Y zifikelela kwi-Kt² >15%, nto leyo ebangela ilahleko ephantsi yokufakwa (<1.5 dB) kunye nokuqengqeleka okuphezulu (>30 dB).
Itekhnoloji yeQuantum	Izixhobo zokubona i-photon enye, imithombo yokuguqula phantsi kwe-parametric	I-coefficient ephezulu engeyomgca (χ(2)=40 pm/V) kunye nezinga eliphantsi lokubala okumnyama (<100 counts/s) zonyusa ukuthembeka kwe-quantum.
Ukuva kwezeMveliso	Izinzwa zoxinzelelo lobushushu obuphezulu, ii-transformers zangoku	Impendulo ye-piezoelectric ye-LiTaO3 wafer (g33 >20 mV/m) kunye nokunyamezelana nobushushu obuphezulu (>400°C) zilungele iimeko ezishushu kakhulu.

Iinkonzo ze-XKH

1. Ukwenziwa kweWafer ngokwezifiso

· Ubungakanani kunye nokuSika: Iiwafers eziyi-2–8-intshi ezine-X/Y/Z-cut, i-42°Y-cut, kunye ne-angular cuts ezenziwe ngokwezifiso (±0.01° tolerance).

· Ulawulo lweDoping: I-Fe, i-Mg doping ngendlela yeCzochralski (uluhlu loxinzelelo 10¹⁶–10¹⁹ cm⁻³) ukuze kuphuculwe ii-coefficients ze-electro-optic kunye nozinzo lobushushu.

2. Iiteknoloji zeNkqubo eziPhambili
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· Ukuphola okwenziwa rhoqo (PPLT): Itekhnoloji ye-Smart-Cut yee-wafers ze-LTOI, ifikelela kwi-±10 nm domain period precision kunye nokuguqulwa kwamaza ahambelana nesigaba (QPM).

· Ukuhlanganiswa Okungafaniyo: Ii-wafers ze-LiTaO3 ezidityanisiweyo (POI) ezisekwe kwi-Si ezinolawulo lobukhulu (300–600 nm) kunye nokuqhuba kobushushu ukuya kuthi ga kwi-8.78 W/m·K kwiifilitha ze-SAW ezisebenzisa i-frequency ephezulu.

3. Iinkqubo zoLawulo loMgangatho
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· Uvavanyo oluvela ekupheleni: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), i-AFM (i-surface morphology), kunye novavanyo lwe-optical uniformity (Δn <5×10⁻⁵).

4. Inkxaso yeCandelo loNikezelo lweHlabathi
.
· Umthamo wokuvelisa: Imveliso yenyanga > iiwafers ezingama-5,000 (8-intshi: 70%), kunye nokuhanjiswa okungxamisekileyo iiyure ezingama-48.

· Inethiwekhi yezoThutho: Ukugubungela eYurophu, eMntla Melika, naseAsia-Pacific ngokuthutha ngomoya/ulwandle kunye nokupakishwa okulawulwa bubushushu.