6inch GaN-On-Sapphire

Inkcazelo emfutshane:

150mm 6inch GaN kwiSilicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

I-6-intshi ye-sapphire substrate wafer yimathiriyeli ye-semiconductor ekumgangatho ophezulu equka umaleko we-gallium nitride (GaN) ekhuliswe kwisapphire substrate.Izinto eziphathekayo zineempawu ezibalaseleyo zothutho lwe-elektroniki kwaye zilungele ukwenza izixhobo zombane eziphezulu kunye ne-high-frequency semiconductor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

150mm 6inch GaN kwiSilicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

Indlela yokuvelisa: Inkqubo yokuvelisa ibandakanya ukukhulisa iileya ze-GaN kwi-substrate yesafire kusetyenziswa ubuchule obuphambili obufana nentsimbi-organic chemical vapor deposition (MOCVD) okanye i-molecular beam epitaxy (MBE).Inkqubo yokubeka iqhutyelwa phantsi kweemeko ezilawulwayo ukuze kuqinisekiswe umgangatho ophezulu we-crystal kunye nefilimu efanayo.

Izicelo ze-6inch ze-GaN-On-Sapphire: Ii-chips ze-sapphire substrate ze-6 intshi zisetyenziswa ngokubanzi kwii-microwave zonxibelelwano, iinkqubo ze-radar, iteknoloji engenazintambo kunye ne-optoelectronics.

Ezinye izicelo eziqhelekileyo ziquka

1. I-amplifier yamandla e-Rf

2. Ishishini lokukhanyisa i-LED

3. Izixhobo zonxibelelwano zenethiwekhi ezingenazingcingo

4. Izixhobo zombane kwindawo yobushushu obuphezulu

5. Izixhobo ze-Optoelectronic

Iimpawu zemveliso

- Ubungakanani: I-substrate diameter yi-6 intshi (malunga ne-150 mm).

- Umgangatho womphezulu: Umphezulu ugudiswe kakuhle ukunika umgangatho obalaseleyo wesipili.

- Ukutyeba: Ubukhulu bomaleko we-GaN bunokwenziwa ngokweemfuno ezithile.

- Ukupakishwa: I-substrate ihlanganiswe ngokucophelela kunye nezinto ezichasene ne-static ukukhusela umonakalo ngexesha lokuthutha.

- Imiphetho yokuma: I-substrate inemida ethile yokumisa eququzelela ulungelelwaniso kunye nokusebenza ngexesha lokulungiswa kwesixhobo.

-Ezinye iiparamitha: Iiparamitha ezithile ezinjengokubhitya, ukumelana noxinzelelo kunye noxinzelelo lwe-doping zinokuhlengahlengiswa ngokweemfuno zabathengi.

Ngeempawu zabo eziphathekayo eziphezulu kunye nezicelo ezahlukeneyo, i-6-intshi ye-sapphire substrate wafers yinto ethembekileyo yokuphuhliswa kwezixhobo eziphezulu ze-semiconductor kumashishini ahlukeneyo.

ISubstrate	6” 1mm <111> p-uhlobo Si	6” 1mm <111> p-uhlobo Si
Epi ThickAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Ukuqubuda	+/-45um	+/-45um
Ukuqhekeka	<5mm	<5mm
I-BV ethe nkqo	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
I-SiN Cap	5-60nm	5-60nm
2DEG ikhonkotha.	~10¹³cm^-2	~10¹³cm^-2
Ukushukuma	~ 2000cm²/Vs (<2%)	~ 2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)