LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Ukutyeba 250-500um

Inkcazelo emfutshane:

I-wafers ye-LiTaO₃ imele inkqubo ebalulekileyo ye-piezoelectric kunye ne-ferroelectric, ebonisa i-piezoelectric coefficients ekhethekileyo, ukuzinza kwe-thermal, kunye neempawu ezibonakalayo, zibenza zibe yimfuneko kwizihluzi ze-acoustic wave (SAW), i-bulk acoustic wave (BAW) resonators, i-optical modulators, kunye ne-infrared detectors. I-XKH igxile kwikhwalithi ephezulu ye-LiTaO₃ i-wafer ye-R&D kunye nemveliso, isebenzisa ukukhula kwekristale yeCzochralski (CZ) ephezulu kunye neenkqubo ze-epitaxy yesigaba solwelo (LPE) ukuqinisekisa i-homogeneity ephezulu ye-crystalline kunye noxinzelelo lweziphene <100/cm².

I-XKH inikezela nge-3-intshi, i-4-intshi, kunye ne-6-intshi ye-LiTaO₃ ii-wafers ezine-crystallographic orientations ezininzi (i-X-cut, i-Y-cut, i-Z-cut), ixhasa i-doping eyenziwe ngokwezifiso (Mg, Zn) kunye nonyango lwe-poling ukuhlangabezana neemfuno ezithile zesicelo. I-dielectric constant (ε~ 40-50), i-coezoelectric coefficient (d₃₃~8-10 pC/N), kunye nobushushu beCurie (~600 ° C) imisela i-LiTaO₃ njengeyona nto ikhethwayo yokucoca i-high-frequency filters kunye nezinzwa ezichanekileyo.

Ukwenziwa kwethu okudityanisiweyo okuthe nkqo kugubungela ukukhula kwekristale, ukupholisha, ukupolisha, kunye nokubekwa kwefilimu ebhityileyo, kunye nomthamo wenyanga wemveliso odlula ii-wafers ezingama-3,000 zokusebenzela unxibelelwano lwe-5G, i-elektroniki yabathengi, iifotonics, kunye namashishini okhuselo. Sinikezela ngothethwano olubanzi lobugcisa, ukulinganiswa kwesampulu, kunye neenkonzo zeprototyping ezinomthamo ophantsi ukuhambisa izisombululo zeLiTaO₃.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparamitha zobugcisa

Igama	I-Optical-grade LiTaO3	Inqanaba letafile yesandi LiTaO3
Axial	Z cut + / - 0.2 °	36 ° Y ukusika / 42 ° Y ukusika / X usike(+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Inqwelomoya yeDatum	22mm +/ - 2mm	22mm + /-2mm32mm + /-2mm
Ukutyeba	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Ubushushu beCurie	605 °C + / - 0.7 °C (Indlela ye-DTA)	605 °C + / -3 °C (Indlela yeDTA
Umgangatho womphezulu	Ukupolishwa kwamacala amabini	Ukupolishwa kwamacala amabini
Imiphetho eChamfered	ukujikeleza komphetho	ukujikeleza komphetho

Iimpawu eziphambili

1. Ubume beCrystal kunye nokuSebenza koMbane

· Ukuzinza kweCrystallographic: I-100% ye-4H-SiC i-polytype dominance, i-zero multicrystalline inclusions (umzekelo, i-6H / 15R), kunye ne-XRD yokugubha i-curve epheleleyo kwi-half-maximum (FWHM) ≤32.7 arcsec.
· High Carrier Mobility: Electron mobility of 5,400 cm²/V·s (4H-SiC) kunye nokushukuma komngxuma we-380 cm²/V·s, eyenza uyilo lwesixhobo esisebenza ngamaza aphezulu.
·Ubulukhuni bemitha: imelana nemitha ye-neutron eyi-1 kunye nomda womonakalo wokufuduswa we-1×10¹⁵ n/cm², ilungele i-aerospace kunye nokusetyenziswa kwenyukliya.

2.IiPropati ze-Thermal kunye ne-Mechanical

· I-Exceptional Thermal Conductivity: 4.9 W / cm·K (4H-SiC), i-triple ye-silicon, umsebenzi oxhasayo ngaphezu kwe-200 ° C.
· I-Coefficient yoKwandiswa kwe-Thermal ephantsi: i-CTE ye-4.0 × 10⁻⁶/K (25-1000 ° C), iqinisekisa ukuhambelana nokupakishwa kwe-silicon kunye nokunciphisa uxinzelelo lwe-thermal.

3.Ukulawula isiphene kunye nokuLungisa ukuCoca
.
Uxinaniso lweMibhobho yeMicropipe: <0.3 cm⁻² (ii-intshi ezisi-8-intshi), ingxinano yokususa indawo engaphantsi kwe-1,000 cm⁻² (iqinisekiswe nge-KOH etching).
· Umgangatho woMphezulu: I-CMP-imenyezeliswe ukuya kwi-Ra <0.2 nm, ihlangabezana neemfuno ze-EUV lithography-grade flatness.

Usetyenziso oluphambili

I-Domain	Iimeko zosetyenziso	Izinto eziluncedo kwezobuGcisa
Unxibelelwano lwe-Optical	I-100G / 400G lasers, iimodyuli ze-silicon photonics hybrid	I-substrates yembewu ye-InP yenza i-bandgap ngqo (i-1.34 eV) kunye ne-Si-based heteroepitaxy, ukunciphisa ilahleko yokudibanisa i-optical.
Izithuthi zaMandla amatsha	Iziguquli ze-800V eziphezulu ze-voltage, iitshaja ezisebhodini (OBC)	I-4H-SiC substrates ukumelana> 1,200 V, ukunciphisa ilahleko yokuqhuba nge-50% kunye nomthamo wenkqubo nge-40%.
Unxibelelwano lwe-5G	Izixhobo zeRF zeMillimeter-wave (PA/LNA), ii-amplifiers zamandla kwisikhululo sesiseko	ISemi-insulating SiC substrates (i-resistivity >10⁵ Ω·cm) yenza i-high-frequency (60 GHz+) indibaniselwano yokwenziwa.
Izixhobo zoShishino	Izinzwa zobushushu obuphezulu, iziguquli zangoku, iimonitha zereactor yenyukliya	I-InSb seed substrates (0.17 eV bandgap) ihambisa ubuntununtunu bemagnethi ukuya kuthi ga kwi-300%@10 T.

Ii-Wafers ze-LiTaO₃ - Iimpawu eziphambili

1. Ukusebenza okuphezulu kwePiezoelectric

· I-piezoelectric coefficients ephezulu (d₃₃~8-10 pC/N, K²~0.5%) yenza izixhobo ze-SAW/BAW ze-frequency ephezulu zifake ilahleko <1.5dB ye-5G RF izihluzi

Udibaniso olugqwesileyo lwe-electromechanical luxhasa i-width-bandwidth (≥5%) uyilo lokucoca kwi-sub-6GHz kunye ne-mmWave application

2. IiPropati zeOptical

· Ukucaca kweBroadband (>70% yosasazo ukusuka kwi-400-5000nm) kwiimodyuli ze-electro-optic ukufikelela> 40GHz bandwidth

· Ukuchaphazeleka okunamandla okungenamda kwamehlo (χ⁽²⁾~30pm/V) kuququzelela isizukulwana sesibini se-harmonic (SHG) kwiinkqubo ze-laser.

3. Uzinzo lokusiNgqongileyo

· Ubushushu obuphezulu beCurie (600°C) bugcina impendulo yepiezoelectric kwibakala lemoto (-40°C ukuya kwi-150°C) kubume bendawo

· I-Chemical inertness ngokuchasene ne-acids / alkalies (pH1-13) iqinisekisa ukuthembeka kwi-industrial sensor applications

4. Izakhono zokuziqhelanisa

· Ubunjineli boqhelaniso: X-cut (51°), Y-cut (0°), Z-cut (36°) ukwenzela iimpendulo zepiezoelectric ezilungiselelwe

· Iinketho zokusebenzisa i-doping: I-Mg-doped (i-optical damage resistance), i-Zn-doped (iphuculwe i-d₃₃)

· Ukugqitywa komphezulu: I-Epitaxial-ready polishing (Ra<0.5nm), ITO/Au metallization

I-LiTaO₃ Wafers - Izicelo eziphambili

1. RF Front-End Iimodyuli

· Izihlungi ze-5G NR SAW (Ibhendi n77/n79) kunye nomlinganiso wobushushu wokuphindaphinda (TCF) <|-15ppm/°C|

· Iiresonators ze-BAW ze-Ultra-wideband ze-WiFi 6E/7 (5.925-7.125GHz)

2. IiFotonikhi ezidibeneyo

· Iimodyuli ze-Mach-Zehnder ezinesantya esiphezulu (>100Gbps) zonxibelelwano lwamehlo oluhambelanayo

· Izixhobo ze-infrared ze-QWIP ezine-cutoff wavelengths ezinokugqithwa ukusuka kwi-3-14μm

3. I-Electronics yeemoto

·Iinzwa zokupaka zeUltrasonic ezine>200kHz yokusebenza rhoqo

· Iitransducer ze-TPMS piezoelectric zisinda -40°C ukuya kwi-125°C ukukhwela ibhayisekile ngokushushu

4. Iinkqubo zoKhuselo

· Izihluzi zomamkeli we-EW ezine>60dB ngaphandle kwebhendi yokukhatywa

· Iifestile ze-IR zomjukujelwa zisasaza 3-5μm MWIR radiation

5. IiTekhnoloji ezisakhulayo

· Iitransducer ze-Optomechanical quantum zoguqulelo lwe-microwave-to-optical

· Uluhlu lwe-PMUT kumfanekiso we-ultrasound yezonyango (>20MHz isisombululo)

I-LiTaO₃ Wafers - Iinkonzo ze-XKH

1. ULawulo lweNtengo

· Ukusetyenzwa kwe-Boule-to-wafer kunye ne-4-iveki ekhokelayo yexesha lokuchazwa kwemigangatho

· Imveliso enexabiso eliphezulu inikezela nge-10-15% inzuzo yexabiso xa kuthelekiswa nabakhuphisana nabo

2. Izisombululo zesiko

· I-wafering-specific wafering: 36 ° ± 0.5 ° Y-cut ukwenzela ukusebenza kakuhle kwe-SAW

· Iingoma ezifakwe kwi-Doped: I-MgO (5mol%) yedoping yokusetyenziswa kwamehlo

Iinkonzo zesinyithi: Cr/Au (100/1000Å) ipateni ye-electrode

3. Inkxaso yoBugcisa

· Iimpawu zeMathiriyeli: XRD ijika elijikajikayo (FWHM <0.01 °), uhlalutyo lomphezulu we-AFM

· Ukulinganisa isixhobo: Ukwenziwa kwe-FEM kuyilo loyilo lokucoca i-SAW

Ukuqukumbela

Ii-wafers ze-LiTaO₃ ziyaqhubeka nokwenza ukuqhubela phambili kwetekhnoloji kulo lonke unxibelelwano lweRF, iifotoni ezidityanisiweyo, kunye nezinzwa zendalo ezingqongileyo. Ubuchwephesha bezinto eziphathekayo ze-XKH, ukuchaneka kwemveliso, kunye nenkxaso yobunjineli besicelo inceda abathengi boyise imingeni yoyilo kwiinkqubo ze-elektroniki zesizukulwana esilandelayo.