I-12intshi yeSapphire Wafer C-Plane SSP/DSP
Umzobo oneenkcukacha
Intshayelelo yeSapphire
I-wafer yesafire yinto eyenziwe ngekristale enye eyenziwe nge-high-purity synthetic aluminium oxide (Al₂O₃). Iikristale ezinkulu zesafire zikhuliswa kusetyenziswa iindlela eziphambili ezifana neKyropoulos (KY) okanye iHeat Exchange Method (HEM), kwaye emva koko zicutshungulwa ngokusika, ukujolisa, ukugaya, kunye nokupolisha ngokuchanekileyo. Ngenxa yeempawu zayo ezibalaseleyo zomzimba, ezibonakalayo, kunye neekhemikhali, i-wafer yesafire idlala indima engenakutshintshwa kwicandelo le-semiconductors, i-optoelectronics, kunye ne-electronics zabathengi eziphezulu.
Iindlela zokwenziwa kweSapphire eziPhambili
| Indlela | Umgaqo | Iingenelo | Izicelo eziphambili |
|---|---|---|---|
| Indlela yeVerneuil(Ukuhlanganiswa kweLangabi) | Umgubo we-Al₂O₃ ococekileyo kakhulu unyibilikiswa kwilangatye le-oxyhydrogen, amathontsi aqina umaleko ngomaleko kwimbewu | Ixabiso eliphantsi, ukusebenza kakuhle okuphezulu, inkqubo elula kakhulu | Iisapphire ezisemgangathweni welitye, izinto zokuqala ezibonakalayo |
| Indlela yeCzochralski (CZ) | I-Al₂O₃ iyanyibilikiswa kwi-crucible, kwaye ikristale yembewu itsalwa kancinci phezulu ukuze ikhule ikristale | Ivelisa iikristale ezinkulu ngokuthembeka okuhle | Iikristale zeLaser, iifestile ze-optical |
| Indlela yeKyropoulos (KY) | Ukupholisa okucothayo okulawulwayo kuvumela ikristale ukuba ikhule kancinci kancinci ngaphakathi kwi-crucible | Iyakwazi ukukhulisa iikristale ezinkulu, ezingenaxinzelelo luphezulu (amashumi eekhilogram nangaphezulu) | Ii-substrates ze-LED, izikrini ze-smartphone, izinto ezibonakalayo |
| Indlela ye-HEM(Utshintshiselwano lobushushu) | Ukupholisa kuqala ukusuka phezulu kwe-crucible, iikristale zikhula ziye ezantsi ukusuka kwimbewu | Ivelisa iikristale ezinkulu kakhulu (ukuya kuthi ga kumakhulu eekhilogram) ngomgangatho ofanayo | Iifestile ezinkulu ze-optical, i-aerospace, i-optics yomkhosi |
Uqhelaniso lwekristale
| Uqhelaniso / Inqwelomoya | Isalathiso sikaMiller | Iimpawu | Izicelo eziphambili |
|---|---|---|---|
| Inqwelo-moya ye-C | (0001) | Ithe nkqo kumphezulu we-c-axis, i-polar, ii-athomu zicwangciswe ngokulinganayo | I-LED, ii-laser diodes, ii-GaN epitaxial substrates (ezisetyenziswa kakhulu) |
| Inqwelo-moya | (11-20) | Ifana nomphezulu ongengowe-polar, ofana nowe-c-axis, ithintela imiphumo ye-polarization | Izixhobo ze-GaN epitaxy ezingezizo ezo zi-polar, izixhobo ze-optoelectronic |
| Inqwelo-moya ye-M | (10-10) | Ihambelana ne-c-axis, i-non-polar, i-symmetry ephezulu | Izixhobo ze-GaN epitaxy ezisebenza kakuhle, izixhobo ze-optoelectronic |
| Inqwelo-moya eyi-R | (1-102) | Ithambekele kwi-c-axis, iipropati ezintle zokukhanya | Iifestile ezibonakalayo, izixhobo zokubona nge-infrared, izixhobo zelaser |
Inkcazelo yeSapphire Wafer (Enokwenziwa ngokwezifiso)
| Into | IiWafers zeSapphire eziyi-1 intshi (0001) 430μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 25.4 mm +/- 0.1 mm | |
| Ubukhulu | 430 μm +/- 25 μm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 5 μm | |
| I-BOW | < 5 μm | |
| I-WARP | < 5 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye. | ||
| Into | IiWafers zeSapphire eziyi-2-intshi (0001) 430μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 50.8 mm +/- 0.1 mm | |
| Ubukhulu | 430 μm +/- 25 μm | |
| Uqhelaniso oluPhambili oluSicaba | Inqwelo-moya (11-20) +/- 0.2° | |
| Ubude obuPhambili obuSicaba | 16.0 mm +/- 1.0 mm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 10 μm | |
| I-BOW | < 10 μm | |
| I-WARP | < 10 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye. | ||
| Into | IiWafers zeSapphire eziyi-3-intshi (0001) 500μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 76.2 mm +/- 0.1 mm | |
| Ubukhulu | 500 μm +/- 25 μm | |
| Uqhelaniso oluPhambili oluSicaba | Inqwelo-moya (11-20) +/- 0.2° | |
| Ubude obuPhambili obuSicaba | 22.0 mm +/- 1.0 mm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 15 μm | |
| I-BOW | < 15 μm | |
| I-WARP | < 15 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye. | ||
| Into | IiWafers zeSapphire eziyi-4-intshi (0001) 650μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 100.0 mm +/- 0.1 mm | |
| Ubukhulu | 650 μm +/- 25 μm | |
| Uqhelaniso oluPhambili oluSicaba | Inqwelo-moya (11-20) +/- 0.2° | |
| Ubude obuPhambili obuSicaba | 30.0 mm +/- 1.0 mm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 20 μm | |
| I-BOW | < 20 μm | |
| I-WARP | < 20 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye. | ||
| Into | IiWafers zeSapphire eziyi-6-intshi (0001) 1300μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 150.0 mm +/- 0.2 mm | |
| Ubukhulu | 1300 μm +/- 25 μm | |
| Uqhelaniso oluPhambili oluSicaba | Inqwelo-moya (11-20) +/- 0.2° | |
| Ubude obuPhambili obuSicaba | 47.0 mm +/- 1.0 mm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 25 μm | |
| I-BOW | < 25 μm | |
| I-WARP | < 25 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye. | ||
| Into | IiWafers zeSapphire eziyi-8-intshi (0001) eziyi-1300μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 200.0 mm +/- 0.2 mm | |
| Ubukhulu | 1300 μm +/- 25 μm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 30 μm | |
| I-BOW | < 30 μm | |
| I-WARP | < 30 μm | |
| Ukucoca / Ukupakishwa | Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100, | |
| Ukupakisha isiqwenga esinye. | ||
| Into | IiWafers zeSapphire eziyi-12-intshi (0001) eziyi-1300μm | |
| Izinto zekristale | 99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | Inkulu, ilungele i-Epi | |
| Ukujongwa komphezulu | I-C-plane(0001) | |
| I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 300.0 mm +/- 0.2 mm | |
| Ubukhulu | 3000 μm +/- 25 μm | |
| Icala Elinye Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (SSP) | Umphezulu Ongasemva | Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm |
| Icala Eliphindwe Kabini Elikhazimlisiweyo | Umphezulu ongaphambili | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| (i-DSP) | Umphezulu Ongasemva | I-Epi-polished, i-Ra < 0.2 nm (yi-AFM) |
| I-TTV | < 30 μm | |
| I-BOW | < 30 μm | |
| I-WARP | < 30 μm | |
Inkqubo yokuvelisa iWafer yeSapphire
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Ukukhula kwekristale
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Khulisa iibhola zesafire (100–400 kg) usebenzisa indlela yeKyropoulos (KY) kwii-oven ezikhuliswe ngekristale.
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Ukubhola kunye nokubumba ii-Ingot
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Sebenzisa ibhereli yokubhola ukuze ucubungule ibhowule ibe zii-ingots ezisilinda ezinobubanzi obuzii-intshi ezi-2–6 kunye nobude obuzii-50–200 mm.
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Ukuqokelela kokuqala
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Hlola iziphene zeengots uze wenze i-annealing yokuqala yobushushu obuphezulu ukuze unciphise uxinzelelo lwangaphakathi.
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Uqhelaniso lwekristale
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Chonga indlela echanekileyo yokujonga i-sapphire ingot (umz., i-C-plane, i-A-plane, i-R-plane) usebenzisa izixhobo zokujonga.
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Ukusika iSaw enezintambo ezininzi
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Sika i-ingot ibe zii-wafers ezincinci ngokobukhulu obufunekayo usebenzisa izixhobo zokusika ezineentambo ezininzi.
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Uhlolo Lokuqala kunye nokuNxulutywa Kwesibini
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Hlola ii-wafers ezisikiweyo (ukutyeba, ukuba tyaba, iziphene zomphezulu).
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Phinda u-annealing kwakhona ukuba kuyimfuneko ukuphucula umgangatho wekristale.
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Ukucola, ukuGrila kunye nokuPolisha nge-CMP
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Yenza i-chamfering, i-surface grinding, kunye ne-chemical mechanical polishing (CMP) ngezixhobo ezikhethekileyo ukuze ufumane iindawo ezikumgangatho wesipili.
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Ukucoca
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Coca ii-wafers kakuhle usebenzisa amanzi acocekileyo kakhulu kunye neekhemikhali kwindawo ecocekileyo ukuze ususe amasuntswana kunye nezinto ezingcolisayo.
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Uhlolo Lokubona Nolwenyama
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Yenza ukufunyanwa kokudluliselwa kwedatha kwaye urekhode idatha ye-optical.
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Linganisa iiparameter ze-wafer eziquka i-TTV (Total Thickness Variation), iBow, iWarp, ukuchaneka kokujonga, kunye noburhabaxa bomphezulu.
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Ukwaleka (Uyazikhethela)
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Faka izinto zokugquma (umz., izinto zokugquma ze-AR, iileya zokukhusela) ngokweemfuno zomthengi.
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Uhlolo lokugqibela kunye nokuPakisha
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Yenza uhlolo lomgangatho olupheleleyo lwe-100% kwigumbi lokucoca.
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Pakisha ii-wafers kwiibhokisi zekhasethi phantsi kweemeko ezicocekileyo zeClass-100 uze uzivale nge-vacuum ngaphambi kokuba zithunyelwe.
Ukusetyenziswa kweeWafers zeSapphire
Iiwafer zesafire, ezinobunzima obukhethekileyo, ukuhanjiswa okugqwesileyo kwe-optical, ukusebenza kakuhle kobushushu, kunye nokufakelwa kombane, zisetyenziswa kakhulu kumashishini amaninzi. Usetyenziso lwazo alugubungeli nje kuphela amashishini e-LED emveli kunye ne-optoelectronic kodwa lukwakhula luye kwii-semiconductors, ii-electronics zabathengi, kunye neendawo eziphambili zeenqwelo moya kunye nezokhuselo.
1. IiSemiconductors kunye neeOptoelectronics
Ii-substrates ze-LED
Iiwafer zesafire zezona zinto ziphambili zokukhula kwe-gallium nitride (GaN) epitaxial, ezisetyenziswa kakhulu kwii-LED eziluhlaza okwesibhakabhaka, ii-LED ezimhlophe, kunye neetekhnoloji zeMini/Micro LED.
IiDiode zeLaser (iiLD)
Njengezinto ezisetyenziswa kwi-GaN-based laser diodes, ii-sapphire wafers zixhasa uphuhliso lwezixhobo ze-laser ezinamandla aphezulu, ezihlala ixesha elide.
Izixhobo zokufota
Kwi-ultraviolet kunye ne-infrared photodetectors, ii-sapphire wafers zihlala zisetyenziswa njengeefestile ezikhanyayo kunye nezinto zokukhusela ubushushu.
2. Izixhobo zeSemiconductor
IiRFIC (iiRadio Frequency Integrated Circuits)
Ngenxa yobushushu bazo obugqwesileyo bombane, ii-wafers zesafire zilungele ukusetyenziswa kwi-microwave esebenza rhoqo kakhulu kunye nezixhobo ezinamandla aphezulu.
Itekhnoloji yeSilicon-on-Sapphire (SoS)
Ngokusebenzisa itekhnoloji yeSoS, amandla e-parasitic anokuncitshiswa kakhulu, nto leyo ephucula ukusebenza kwesekethe. Oku kusetyenziswa kakhulu kunxibelelwano lwe-RF kunye ne-elektroniki ye-aerospace.
3. Usetyenziso lwe-Optical
Iifestile ze-Infrared Optical
Njengoko i-sapphire inamandla aphezulu kuluhlu lwamaza angama-200 nm–5000 nm, i-sapphire isetyenziswa kakhulu kwi-infrared detectors nakwiinkqubo zesikhokelo se-infrared.
Iifestile zeLaser ezinamandla aphezulu
Ubunzima kunye nokumelana nobushushu kwesafire kwenza ukuba ibe yinto efanelekileyo yokukhusela iifestile kunye neelensi kwiinkqubo ze-laser ezinamandla aphezulu.
4. Izixhobo ze-elektroniki zabathengi
Izigqubuthelo zeLensi yeKhamera
Ubunzima obukhulu besafire buqinisekisa ukumelana nokukrwela kwiifowuni eziphathwayo kunye neekhamera.
Izinzwa zeminwe
Iiwafer zesafire zingasebenza njengezigqubuthelo eziqinileyo nezibonakalayo eziphucula ukuchaneka kunye nokuthembeka ekuqaphelweni kweminwe.
Iiwotshi ezikrelekrele kunye neeDisplay zePremium
Izikrini zesafire zidibanisa ukumelana nokukrwela kunye nokucaca okuphezulu kokukhanya, nto leyo ezenza zithandwe kwiimveliso ze-elektroniki ezikumgangatho ophezulu.
5. Inqwelo-moya kunye noKhuselo
IiDomes ze-Infrared zeMissile
Iifestile zesafire zihlala zikhanya kwaye zizinzile phantsi kweemeko zobushushu obuphezulu, nesantya esiphezulu.
Iinkqubo ze-Aerospace Optical
Zisetyenziswa kwiifestile ze-optical ezinamandla aphezulu kunye nezixhobo zokujonga ezenzelwe iindawo ezingaqhelekanga.
Ezinye iimveliso zeSapphire eziqhelekileyo
Iimveliso ze-Optical
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Iifestile zeSapphire Optical
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Isetyenziswa kwiileser, iispectrometer, iinkqubo zomfanekiso we-infrared, kunye neefestile zesensor.
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Uluhlu lothumelo:UV 150 nm ukuya kwi-IR ephakathi 5.5 μm.
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Iilensi zeSapphire
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Isetyenziswa kwiinkqubo zelaser ezinamandla aphezulu kunye ne-aerospace optics.
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Ingenziwa njengeelensi ezijijekileyo, ezigobileyo, okanye ezisilinda.
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Iiprism zeSapphire
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Isetyenziswa kwizixhobo zokulinganisa ezibonakalayo kunye neenkqubo zokubonisa imifanekiso ngokuchanekileyo.
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Inqwelo-moya kunye noKhuselo
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IiDomes zeSapphire
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Khusela abafuna izinto ezisebenzisa i-infrared kwii-missile, ii-UAV, kunye neenqwelo-moya.
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Izigqubuthelo zoKhuseleko zeSapphire
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Ukumelana nefuthe lomoya ohamba ngesantya esiphezulu kunye neendawo ezinobungozi.
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Ukupakishwa kweMveliso
Malunga neXINKEHUI
IShanghai Xinkehui New Material Co., Ltd. yenye yeumthengisi omkhulu we-optical & semiconductor eTshayina, eyasekwa ngo-2002. I-XKH yaphuhliswa ukuze inike abaphandi bezemfundo ii-wafers kunye nezinye izixhobo zesayensi ezinxulumene ne-semiconductor kunye neenkonzo. Izixhobo ze-semiconductor yeyona shishini lethu liphambili, iqela lethu lisekelwe kubuchwepheshe, ukusukela oko yasekwa, i-XKH ibandakanyeka kakhulu kuphando nophuhliso lwezixhobo ze-elektroniki eziphambili, ngakumbi kwicandelo le-wafer / substrate ezahlukeneyo.
Amaqabane
Ngobuchwepheshe bayo obubalaseleyo bezinto ze-semiconductor, iShanghai Zhimingxin ibe liqabane elithembekileyo leenkampani eziphambili kwihlabathi kunye namaziko emfundo adumileyo. Ngokuqhubeka kwayo ekuveliseni izinto ezintsha kunye nokugqwesa, iZhimingxin iseke ubudlelwane obunzulu bentsebenziswano neenkokheli zoshishino ezifana neSchott Glass, iCorning, kunye neSeoul Semiconductor. Olu budlelwane aluzange luphucule kuphela umgangatho wobugcisa beemveliso zethu, kodwa lukwakhuthaze uphuhliso lobuchwepheshe kwicandelo le-elektroniki yamandla, izixhobo ze-optoelectronic, kunye nezixhobo ze-semiconductor.
Ukongeza kwintsebenziswano neenkampani ezaziwayo, iZhimingxin ikwaseke ubudlelwane bentsebenziswano yophando olude neeyunivesithi eziphambili kwihlabathi liphela ezifana neHarvard University, iUniversity College London (UCL), kunye neYunivesithi yaseHouston. Ngale ntsebenziswano, iZhimingxin ayiboneleli nje ngenkxaso yobugcisa kwiiprojekthi zophando lwesayensi kwizikolo zemfundo ephakamileyo, kodwa ikwathatha inxaxheba ekuphuhlisweni kwezinto ezintsha kunye nophuhliso lwetekhnoloji, iqinisekisa ukuba sisoloko siphambili kushishino lwe-semiconductor.
Ngentsebenziswano esondeleyo nezi nkampani zidumileyo kwihlabathi liphela kunye namaziko emfundo ephakamileyo, iShanghai Zhimingxin iyaqhubeka nokukhuthaza uphuhliso lwetekhnoloji, ibonelela ngeemveliso kunye nezisombululo ezikumgangatho wehlabathi ukuhlangabezana neemfuno ezikhulayo zemarike yehlabathi.
