12 intshi yeDia300x1.0mmt yeSapphire Wafer Substrate C-Plane SSP/DSP

I-12 intshi ye-Dia300x1.0mmt yeSapphire Wafer Substrate C-Plane ye-SSP/DSP eFakelweyo nguMfanekiso

Inkcazelo emfutshane:

Ngophuhliso lwesayensi kunye nobuchwepheshe, iimfuno ezintsha zobukhulu kunye nomgangatho wezinto zekristale zesafire zibekwe phambili.Ngoku, ngophuhliso olukhawulezayo lokukhanyisa kwe-semiconductor kunye nezinye izicelo ezivelayo, imarike yeendleko eziphantsi, umgangatho ophezulu, iikristale ezinkulu zesafire zanda ngokumangalisayo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-12inch yeSapphire Substrate yeNdawo yeMarike

Okwangoku, isafire ineendlela ezimbini eziphambili zokusetyenziswa, enye yimathiriyeli ye-substrate, eyona nto iyimathiriyeli ye-LED substrate, enye yi-watch dial, i-aviation, i-aerospace, izinto ezikhethekileyo zefestile.

Nangona i-silicon carbide, i-silicon kunye ne-gallium nitride zikwafumaneka njenge-substrates ye-leds ukongeza kwisafire, imveliso yobuninzi ayinakwenzeka ngenxa yeendleko kunye nezinye iibhotile zobugcisa ezingasonjululwanga.I-Sapphire substrate ngophuhliso lobuchwephesha kwiminyaka yakutshanje, ukuhambelana kwayo kwelatisi, ukuhanjiswa kombane, iipropathi zomatshini, ukuhanjiswa kwe-thermal kunye nezinye iipropathi ziphuculwe kakhulu kwaye zakhuthazwa, inzuzo enexabiso eliphantsi ibalulekile, ke isafire iye yaba yeyona nto iqolileyo kwaye izinzile. kushishino lwe-LED, isetyenziswe ngokubanzi kwimarike, isabelo semarike siphezulu njenge-90%.

Iimpawu ze-12 Intshi yeSapphire Wafer Substrate

1. Imiphezulu yeSapphire substrate inenani eliphantsi kakhulu, elinamasuntswana angaphantsi kwama-50 amasuntswana angama-0.3 okanye ngaphezulu nge-intshi ezi-2 kuluhlu lwesayizi ye-intshi ezi-2 ukuya kwezi-8, kunye neentsimbi ezinkulu (K, Ti, Cr, Mn, Fe, Co, Ni , Cu, Zn) ngaphantsi kwe-2E10/cm2.I-12-intshi ye-base material kulindeleke ukuba iphumelele kweli nqanaba.
2. Ingasetyenziselwa njenge-wafer ye-carrier ye-12-intshi ye-semiconductor yokuvelisa inkqubo (i-pallets yokuthutha kwisixhobo) kunye ne-substrate yokudibanisa.
3. Inokulawula ubume beconcave kunye neconvex surface.
Material: Ucoceko oluphezulu lwekristale enye Al2O3, isafire wafer.
Umgangatho we-LED, akukho bubbles, iintanda, amawele, umnombo, akukho mbala..etc.

12 intshi yeSapphire Wafers

Ukuqhelaniswa	I-C-plane <0001> +/- 1 deg.
Ububanzi	300.0 +/-0.25 mm
Ukutyeba	1.0 +/-25um
Inotshi	Inotshi okanye iflethi
TTV	<50um
THOBEKA	<50um
Imiphetho	I-chamfer esebenzayo
Icala langaphambili - elikhazimlisiweyo 80/50
Uphawu lweLaser	Akukho nanye
Ukupakishwa	Ibhokisi yokuthwala i-wafer enye
Icala langaphambili i-Epi ilungile ikhazimlisiwe (Ra <0,3nm)
Icala elingasemva i-Epi ilungile ikhazimlisiwe (Ra <0,3nm)