IiWafers zeSiC zeSilicon Carbide ezingama-8 intshi ezingama-200mm Uhlobo lwemveliso 4H-N ubukhulu obungama-500um

Ubungakanani: 8 intshi;

Ububanzi: 200mm±0.2;

Ubukhulu: 500um±25;

Ukujongwa komphezulu: 4 ukuya ku-[11-20]±0.5°;

Ukujongwa kweNotch:[1-100]±1°；

Ubunzulu beNotshi: 1±0.25mm；

I-Micropipe: <1cm2;

Iipleyiti zeHex: Akukho Zivumelekileyo;

Ukumelana: 0.015~0.028Ω;

I-EPD:<8000cm2;

I-TED:<6000cm2

I-BPD:<2000cm2

I-TSD:<1000cm2

SF: indawo<1%

I-TTV≤15um；

I-Warp≤40um；

Isaphetha ≤25um ；

Iindawo zePoly: ≤5%;

Ukukrwela: <5 kunye nobude obuqokelelweyo< 1 Ububanzi beWafer;

Iitships/Idents: Akukho mvume yobubanzi kunye nobunzulu obuyi-D>0.5mm;

Imifantu: Akukho;

Ibala: Akukho

Umphetho we-wafer: I-Chamfer;

Ukugqitywa komphezulu: I-Double Side Polish, i-Si Face CMP;

Ukupakisha: Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye;

Ubunzima obukhoyo ngoku ekulungiseleleni iikristale ze-200mm 4H-SiC eziphambili

1) Ukulungiswa kweekristale zembewu ze-200mm 4H-SiC ezikumgangatho ophezulu;

2) Ulawulo lwenkqubo yokungabi nkulu kobushushu kunye nokulawulwa kweenkqubo ze-nucleation;

3) Ukusebenza kakuhle kothutho kunye nophuhliso lwezinto ezinegesi kwiinkqubo zokukhula kwekristale enkulu;

4) Ukuqhekeka kwekristale kunye nokwanda kweziphene okubangelwa kukwanda koxinzelelo lobushushu obukhulu.

Ukuze koyiswe le mingeni kwaye kufumaneke ii-wafers ze-200mm SiC ezisemgangathweni ophezulu, kucetyiswa izisombululo:

Ngokuphathelele ukulungiswa kwekristale yembewu engama-200mm, intsimi yokuhamba kobushushu efanelekileyo, kunye nokuhlanganiswa okwandayo kwafundwa kwaye kwayilwa ukuze kuqwalaselwe umgangatho wekristale kunye nobukhulu obukhulayo; Ukuqala ngekristale ye-150mm SiC se:d, yenza i-seed crystal iteration ukuze wandise kancinci ikristale yeSiC ide ifikelele kwi-200mm; Ngokukhula kwekristale ezininzi kunye nenkqubo, phucula kancinci umgangatho wekristale kwindawo ekhulayo yekristale, kwaye uphucule umgangatho weekristale zembewu ezingama-200mm.

Ngokuphathelele ukulungiswa kwekristale eqhubayo eyi-200mm kunye ne-substrate, uphando luye lwaphucula uyilo lwe-feld kunye ne-flow field yokukhula kwekristale enkulu, lwaqhuba ukukhula kwekristale eqhubayo eyi-200mm ye-SiC, kunye nokulawula ukufana kwe-doping. Emva kokucubungula nokubumba ikristale, kwafunyanwa ingot ye-4H-SiC eqhubayo eyi-8-intshi enobubanzi obuqhelekileyo. Emva kokusika, ukugaya, ukupolisha, ukucubungula ukuze kufunyanwe ii-wafers zeSiC eziyi-200mm ezinobukhulu obuyi-525um okanye ngaphezulu.