I-substrate
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I-3 intshi Dia76.2mm isafire wafer 0.5mm ubukhulu C-plane SSP
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I-wafer ye-Silicon eyi-8 intshi P/N-type (100) 1-100Ω i-dummy reclaimer substrate
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I-wafer ye-SiC Epi ye-4intshi ye-MOS okanye ye-SBD
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I-12intshi yeSapphire Wafer C-Plane SSP/DSP
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I-2intshi ye-50.8mm ye-Silicon wafer FZ N-Type SSP
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I-2intshi SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
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Indlela ye-200kg ye-C-plane Saphire boule 99.999% 99.999% monocrystalline KY
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I-4intshi ye-Silicon wafer FZ CZ N-Type DSP okanye i-SSP Test grade
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IiWafers zeSiC eziyi-4 intshi eziyi-6H ezizi-Semi-Insulating SiC Substrates zikumgangatho ophezulu, uphando, kunye nomgangatho ongeyonyani
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I-wafer ye-substrate ye-HPSI SiC eyi-intshi ezi-6 Ii-wafer ze-Silicon Carbide ezithiywayo kancinci
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Iiwafer zeSiC ezi-4 intshi ezingcolisayo zeHPSI SiC substrate Prime Production grade
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I-wafer ye-substrate ye-3 intshi engama-76.2mm eyi-4H-Semi SiC eyi-Silicon Carbide Iiwafer ze-SiC ezingcolisayo kancinci