I-substrate
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I-8intshi LNOI (LiNbO3 kwi-Insulator) I-Wafer yeeModulators ze-Optical Ii-Waveguides Iisekethe eziDibeneyo
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I-LNOI Wafer (iLithium Niobate kwi-Insulator) I-Telecommunications Sensing High Electro-Optic
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IiWafers zeSilicon Carbide ezizi-3 intshi eziQinisekileyo (ezingafakwanga) zeSilicon Carbide Substrates (HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu
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isafire dia single crystal，ubulukhuni obuphezulu morhs 9 engakrwelekiyo ngokwezifiso
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I-substrate yeSapphire enePatterned PSS 2inch 4inch 6inch ICP dry etching ingasetyenziselwa iitships ze-LED
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I-2 intshi 4 intshi 6 intshi I-Patterned Sapphire Substrate (PSS) apho kukhuliswa khona izinto zeGaN ezinokusetyenziswa ekukhanyiseni i-LED
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I-4H-N/6H-N SiC Wafer Research production Dummy grade Dia150mm Silicon carbide substrate
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I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm
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ipleyiti yegolide ye-silicon wafer （Si Wafer） 10nm 50nm 100nm 500nm Au Ukuqhuba kakuhle kwe-LED
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IiWafers zeSilicon eziGqitywe ngeGolide 2inch 4inch 6inch Ubukhulu bemaleko yeGolide: 50nm (± 5nm) okanye wenze ngokwezifiso ifilimu yokuGqitywa kweAu, ubumsulwa be-99.999%
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I-AlN-on-NPSS Wafer: Umaleko we-aluminium nitride osebenza kakuhle kwi-substrate ye-sapphire engacociweyo kwizicelo zobushushu obuphezulu, amandla aphezulu, kunye ne-RF