SiC
-
4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer for MOS okanye SBD
-
I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene
-
4H-N Uhlobo lweSiC Epitaxial Wafer High Voltage High Frequency
-
I-intshi ezi-3 zoKucoceka okuPhezulu (Akungatshitshiswanga) iSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
-
I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
-
4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
-
Iwafer eqatywe iAu, isafire, isilicon, iSiC, 2inch 4inch 6inch, ukutyeba kwegolide 10nm 50nm 100nm
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
-
I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
-
SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
-
ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
-
6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy