I-SiC
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I-Silicon Carbide (SiC) I-Surstrate yeCristal enye – 10×10mm I-Wafer
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I-wafer ye-HPSI SiC ye-4H-N 6H-N 3C-N I-wafer ye-SiC Epitaxial ye-MOS okanye ye-SBD
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I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene
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Uhlobo lwe-4H-N SiC Epitaxial Wafer High Voltage High Frequency
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IiWafers zeSilicon Carbide ezizi-3 intshi eziQinisekileyo (ezingafakwanga) zeSilicon Carbide Substrates (HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu
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I-4H-N/6H-N SiC Wafer Research production Dummy grade Dia150mm Silicon carbide substrate
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I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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I-substrate ye-carbide ye-Sic silicon eyi-intshi ezi-2 6H-N Uhlobo lwe-0.33mm 0.43mm yokupholisha emacaleni amabini Ukuqhuba okuphezulu kobushushu Ukusetyenziswa kwamandla aphantsi
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Isiseko seSiC 3inch 350um ubukhulu beHPSI Uhlobo lwePrime Grade Isigaba seDummy
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I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade ubukhulu can ba ngokwezifiso