SiC
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
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SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
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ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
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6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy
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SiC Ingot 4H uhlobo Dia 4inch 6inch Ukutyeba 5-10mm Uphando / Dummy Grade
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I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha
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2inch Silicon Carbide Wafer 6H-N Uhlobo lwePrime iBanga loPhando IBanga leDummy iBanga 330μm 430μm Ukutyeba
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I-2inch ye-silicon carbide substrate 6H-N enamacala amabini akhazimlisiweyo ububanzi 50.8mm ibakala lophando lwemveliso
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I-N-Type SiC Composite Substrates Dia6inch Umgangatho ophezulu we-monocrystaline kunye ne-substrate ephantsi yomgangatho
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ISemi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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N-Udidi lweSiC kwiSi Composite Substrates Dia6inch
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I-substrate ye-SiC i-Dia200mm 4H-N kunye ne-HPSI Silicon carbide