SiC
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I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
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4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
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Iwafer eqatywe iAu, isafire, isilicon, iSiC, 2inch 4inch 6inch, ukutyeba kwegolide 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
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SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
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ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
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6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy
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SiC Ingot 4H uhlobo Dia 4inch 6inch Ukutyeba 5-10mm Uphando / Dummy Grade
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I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha
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2inch Silicon Carbide Wafer 6H-N Uhlobo lwePrime iBanga loPhando IBanga leDummy iBanga 330μm 430μm Ukutyeba
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I-2inch ye-silicon carbide substrate 6H-N enamacala amabini akhazimlisiweyo ububanzi 50.8mm ibakala lophando lwemveliso