I-substrate ye-SiC P-uhlobo lwe-4H/6H-P 3C-N 4inch enobukhulu obungama-350um ibakala leMveliso yodidi lweDummy

I-substrate ye-SiC P-uhlobo 4H/6H-P 3C-N 4inch enobukhulu obungama-350um Ibanga leMveliso yebakala iDummy ibakala elifakiweyo

Inkcazelo emfutshane:

I-P-uhlobo lwe-4H / 6H-P 3C-N 4-intshi ye-SiC substrate, enobunzima be-350 μm, yinto ephezulu yokusebenza kwe-semiconductor esetyenziswa ngokubanzi kwimveliso yesixhobo sombane. Iyaziwa ngokuba yi-thermal conductivity ekhethekileyo, amandla ombane aphezulu, kunye nokuxhathisa amaqondo obushushu agqithisileyo kunye neendawo ezinobungozi, le substrate ilungele ukusetyenziswa kombane wombane. I-substrate yomgangatho wemveliso isetyenziselwa ukuveliswa kwezinto ezinkulu, ukuqinisekisa ukulawulwa komgangatho ongqongqo kunye nokuthembeka okuphezulu kwizixhobo zombane eziphambili. Ngeli xesha, i-substrate ye-dummy-grade isetyenziselwa ikakhulu ukulungisa inkqubo, ukulinganisa izixhobo, kunye neprototyping. Iipropati eziphezulu ze-SiC zenza ukuba kube yinto ekhethekileyo yokukhetha izixhobo ezisebenza kwiqondo lokushisa eliphezulu, i-voltage ephezulu, kunye neendawo ezijikelezayo eziphezulu, kubandakanywa izixhobo zamandla kunye neenkqubo zeRF.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-4inch ye-SiC substrate P-uhlobo lwe-4H / 6H-P 3C-N itafile yepharamitha

4 intshi ubukhulu SiliconI-Carbide (SiC) Substrate Inkcazo

IBanga			Zero MPD Production IBanga (Z Ibanga)	Imveliso esemgangathweni IBanga (P Ibanga)	IBanga leDummy (D Ibanga)
Ububanzi			99.5 mm~100.0 mm
Ukutyeba			350 μm ± 25 μm
Iwafer Orientation			Ngaphandle kwe-axis: 2.0 ° -4.0 ° ukuya [112(-)0] ± 0.5 ° ku-4H/6H-P, Oi-axis: 〈111〉± 0.5 ° ye-3C-N
Ukuxinana kweMibhobho			0 cm-2
Ukuxhathisa	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Ukuqhelaniswa neFlethi ePhambili		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ubude beFlethi obuPhambili			32.5 mm ± 2.0 mm
Ubude beFlethi yesibini			18.0 mm ± 2.0 mm
Ukuqhelaniswa neFlethi yesibini			Ubuso beSilicon phezulu: 90° CW. ukusuka kwiflethi yePrime±5.0 °
Ukungabandakanywa kuMda			3 mm		6 mm
LTV/TTV/Saphetha/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			IsiPolish Ra≤1 nm
			I-CMP Ra≤0.2 nm		Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo ≤ 10 mm, ubude obunye≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo			Akukho nanye		Indawo eyongezelekayo≤3%
Ukubandakanywa kweCarbon ebonakalayo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips iPhezulu ngokuKhanya okuKhanya			Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu		I-5 ivunyelwe, ≤1 mm nganye
Ungcoliseko lweSilicon Surface ngoBunzulu obuPhezulu			Akukho nanye
Ukupakishwa			Iikhasethi ezininzi zewafer okanye iSingle Wafer Container

Amanqaku:

※Imida yeziphene isebenza kuwo wonke umphezulu wewafer ngaphandle kwendawo esecaleni yomphetho. # Imikrwelo kufuneka ijongwe kuSi face kuphela.

I-P-uhlobo lwe-4H / 6H-P 3C-N 4-intshi ye-SiC substrate enobunzima be-350 μm isetyenziswa ngokubanzi kwi-electronic advanced kunye nokuveliswa kwesixhobo samandla. Ngomgangatho ogqwesileyo we-thermal conductivity, amandla ombane aphezulu, kunye nokuchasana okunamandla kwiindawo ezingqongileyo ezigqithisileyo, le substrate ifanelekile kumbane osebenza kakhulu onjenge-high-voltage switch, inverters, kunye nezixhobo zeRF. Ii-substrates zodidi lwemveliso zisetyenziselwa ukuveliswa kwezinto ezinkulu, ukuqinisekisa ukuthembeka, ukusebenza kwesixhobo esichanekileyo, esibaluleke kakhulu kumbane we-elektroniki kunye nezicelo eziphezulu ze-frequency. I-Dummy-grade substrates, kwelinye icala, isetyenziselwa ukulinganisa inkqubo, ukuvavanywa kwezixhobo, kunye nophuhliso lweprototype, ukunceda ukugcina ulawulo lomgangatho kunye nenkqubo engaguqukiyo kwimveliso ye-semiconductor.

SpecificationIinzuzo ze-N-uhlobo lwe-SiC composite substrates ziquka

High Thermal Conductivity: Ukutshatyalaliswa kokushisa okusebenzayo kwenza i-substrate ilungele ubushushu obuphezulu kunye nezicelo zamandla aphezulu.
Ukuqhekeka okuphezulu kweVoltage: Ixhasa ukusebenza kwe-voltage ephezulu, ukuqinisekisa ukuthembeka kumbane wamandla kunye nezixhobo zeRF.
Ukuchasana neeNdawo eziBungqwabalala: Ihlala ixesha elide kwiimeko ezinzima ezifana nokushisa okuphezulu kunye neendawo ezinobungozi, ukuqinisekisa ukusebenza okuhlala ixesha elide.
Production-Grade Precision: Iqinisekisa umgangatho ophezulu kunye nokusebenza okuthembekileyo kwimveliso enkulu, ilungele amandla aphambili kunye nosetyenziso lweRF.
I-Dummy-Grade yoVavanyo: Yenza ulungelelwaniso lwenkqubo oluchanekileyo, uvavanyo lwezixhobo, kunye neprototyping ngaphandle kokubeka esichengeni iiwafers zodidi lwemveliso.

Ngokubanzi, i-P-uhlobo lwe-4H / 6H-P 3C-N 4-intshi ye-SiC substrate kunye nobukhulu be-350 μm inika inzuzo ebalulekileyo kwizicelo eziphezulu ze-elektroniki. I-conductivity yayo ephezulu ye-thermal kunye ne-voltage ye-breakdown iyenza ibe yinto efanelekileyo kumandla aphezulu kunye neendawo eziphezulu zokushisa, ngelixa ukuchasana kwayo neemeko ezinzima kuqinisekisa ukuhlala kunye nokuthembeka. Isiseko somgangatho wemveliso siqinisekisa ukusebenza okuchanekileyo kunye nokungaguquguqukiyo kwimveliso enkulu yombane kunye nezixhobo zeRF. Okwangoku, i-substrate ye-dummy-grade ibalulekile ekulinganisweni kwenkqubo, ukuvavanywa kwezixhobo, kunye ne-prototyping, ukuxhasa ulawulo lomgangatho kunye nokungaguquguquki kwimveliso ye-semiconductor. Ezi mpawu zenza ii-substrates ze-SiC zisebenziseke kakhulu kwizicelo eziphambili.