I-wafer ye-HPSI SiC ye-4H-N 6H-N 3C-N I-wafer ye-SiC Epitaxial ye-MOS okanye ye-SBD
I-SiC Substrate I-SiC Epi-wafer emfutshane
Sinikezela ngepotifoliyo epheleleyo yee-substrates zeSiC ezikumgangatho ophezulu kunye nee-sic wafers kwiintlobo ezininzi ze-polytypes kunye neeprofayili ze-doping—kuquka i-4H-N (n-type conductive), i-4H-P (p-type conductive), i-4H-HPSI (high-purity semi-insulating), kunye ne-6H-P (p-type conductive)—ngobubanzi ukusuka kwi-4″, 6″, kunye ne-8″ ukuya kuthi ga kwi-12″. Ngaphaya kwee-substrates ezingenanto, iinkonzo zethu zokukhula kwe-epi wafer ezongeziweyo zibonelela ngee-epitaxial (epi) wafers ezinobukhulu obulawulwa ngokuqinileyo (1–20 µm), ubuninzi be-doping, kunye noxinano lweempazamo.
I-sic wafer nganye kunye ne-epi wafer zihlolwa ngokungqongqo kwi-intanethi (ubuninzi be-micropipe <0.1 cm⁻², uburhabaxa bomphezulu i-Ra <0.2 nm) kunye nokuchazwa kombane okupheleleyo (i-CV, imephu yokumelana) ukuqinisekisa ukufana okugqwesileyo kwekristale kunye nokusebenza. Nokuba zisetyenziselwa iimodyuli ze-elektroniki zamandla, ii-amplifiers ze-RF ezikhawulezayo, okanye izixhobo ze-optoelectronic (ii-LED, ii-photodetectors), imigca yethu yemveliso ye-SiC substrate kunye ne-epi wafer inika ukuthembeka, uzinzo lobushushu, kunye namandla okuqhekeka afunekayo kwizicelo zanamhlanje ezifuna kakhulu.
Iimpawu kunye nokusetyenziswa kohlobo lweSiC Substrate 4H-N
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Isakhiwo se-4H-N SiC substrate iPolytype (Hexagonal)
I-bandgap ebanzi ye-~3.26 eV iqinisekisa ukusebenza kombane okuzinzileyo kunye nokuqina kobushushu phantsi kweemeko zobushushu obuphezulu kunye nombane ophezulu.
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Isiseko seSiCUnyango lwe-N-Type Doping
Ukulawulwa ngokuchanekileyo kwe-nitrogen doping kuvelisa uxinano lwabathwali ukusuka kwi-1×10¹⁶ ukuya kwi-1×10¹⁹ cm⁻³ kunye nokuhamba kwee-electron kubushushu begumbi ukuya kuthi ga kwi-~900 cm²/V·s, okunciphisa ilahleko zokuqhuba.
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Isiseko seSiCUkumelana Okubanzi kunye Nokulingana
Uluhlu olufumanekayo lokumelana nenkunkuma oluyi-0.01–10 Ω·cm kunye nobukhulu be-wafer obuyi-350–650 µm kunye nokunyamezela kwe-±5% kokubini kwi-doping kunye nobukhulu—lulungele ukwenziwa kwezixhobo ezinamandla aphezulu.
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Isiseko seSiCUxinano oluPhantsi kakhulu lweZiphene
Uxinano lwe-micropipe < 0.1 cm⁻² kunye noxinano lwe-basal-plane dislocation < 500 cm⁻², okubonelela nge-> 99% yemveliso yesixhobo kunye nokuthembeka okuphezulu kwekristale.
- Isiseko seSiCUkuqhuba okuNgaphandle kobushushu
Ukuhanjiswa kobushushu ukuya kuthi ga kwi ~370 W/m·K kwenza kube lula ukususa ubushushu ngokufanelekileyo, kwandisa ukuthembeka kwesixhobo kunye noxinano lwamandla.
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Isiseko seSiCIzicelo Ezijoliswe Kuzo
IiSiC MOSFET, iiSchottky diodes, iimodyuli zamandla kunye nezixhobo zeRF zeemoto zombane, ii-solar inverters, ii-industrial drives, iinkqubo zokudonsa, kunye nezinye iimarike zamandla-elektroniki ezifuna amandla.
Iinkcukacha ze-SiC wafer eziyi-6 intshi eziyi-4H-N | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ibanga | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Uqeqesho lweWafer | I-axis evaliweyo: 4.0° ukuya <1120> ± 0.5° | I-axis evaliweyo: 4.0° ukuya <1120> ± 0.5° |
| Uxinano lweeMipayipi ezincinci | ≤ 0.2 cm² | ≤ 15 cm² |
| Ukuxhathisa | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Uqhelaniso oluPhambili oluSicaba | [10-10] ± 50° | [10-10] ± 50° |
| Ubude obuPhambili obuSicaba | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV/TIV / I-Bow / I-Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Uburhabaxa | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Iimfanta zoMphetho ngokukhanya okuphezulu | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm |
| Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 0.1% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 3% |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 5% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | Ubude obuqokelelweyo ≤ ububanzi bewafer e-1 | |
| Iitships zomphetho ngokukhanya okuphezulu | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.2 mm | 7 zivunyelwe, ≤ 1 mm nganye |
| Ukusasazeka kweSikrufu sokuNxibelelanisa | < 500 cm³ | < 500 cm³ |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ||
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
Iinkcukacha ze-SiC wafer ze-8intshi 4H-N | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ibanga | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Uqeqesho lweWafer | 4.0° ukuya <110> ± 0.5° | 4.0° ukuya <110> ± 0.5° |
| Uxinano lweeMipayipi ezincinci | ≤ 0.2 cm² | ≤ 5 cm² |
| Ukuxhathisa | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Uqeqesho Oluhle | ||
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV/TIV / I-Bow / I-Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Uburhabaxa | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Iimfanta zoMphetho ngokukhanya okuphezulu | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm |
| Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 0.1% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 3% |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 5% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | Ubude obuqokelelweyo ≤ ububanzi bewafer e-1 | |
| Iitships zomphetho ngokukhanya okuphezulu | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.2 mm | 7 zivunyelwe, ≤ 1 mm nganye |
| Ukusasazeka kweSikrufu sokuNxibelelanisa | < 500 cm³ | < 500 cm³ |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ||
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
I-4H-SiC sisixhobo esisebenza kakuhle esisetyenziselwa izixhobo ze-elektroniki zamandla, izixhobo ze-RF, kunye nokusetyenziswa kobushushu obuphezulu. I-"4H" ibhekisa kwisakhiwo sekristale, esinomqolo osi-6, kwaye i-"N" ibhekisa kuhlobo lwe-doping olusetyenziselwa ukuphucula ukusebenza kwesixhobo.
I4H-SiCuhlobo lusetyenziswa rhoqo kwi:
Izixhobo zombane:Isetyenziswa kwizixhobo ezifana neediode, iiMOSFET, kunye nee-IGBTs kwiinjini zamandla ezithuthi zombane, oomatshini bemizi-mveliso, kunye neenkqubo zamandla avuselelekayo.
Itekhnoloji ye-5G:Ngenxa yemfuno ye-5G yezinto ezisebenza rhoqo kakhulu nezisebenza kakuhle, amandla eSiC okulawula i-voltage ephezulu kunye nokusebenza kumaqondo obushushu aphezulu ayenza ifaneleke kakhulu kwi-amplifiers zamandla esikhululo sesiseko kunye nezixhobo zeRF.
Iinkqubo zamandla elanga:Iimpawu ezibalaseleyo zokuphatha umbane zeSiC zilungele ii-inverters kunye nee-converters ze-photovoltaic (umbane welanga).
Iimoto zombane (ii-EV):I-SiC isetyenziswa kakhulu kwii-powertrains ze-EV ukuguqula amandla ngendlela ephumelelayo, ukuvelisa ubushushu okuphantsi, kunye noxinano lwamandla aphezulu.
Iimpawu kunye nokusetyenziswa kohlobo lweSiC Substrate 4H Semi-Insulation
Iipropati:
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Iindlela zokulawula uxinano olungenamibhobho: Iqinisekisa ukungabikho kwee-micropipes, iphucula umgangatho we-substrate.
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Iindlela zokulawula i-monocrystalline: Iqinisekisa isakhiwo sekristale esinye seempawu zezinto eziphuculweyo.
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Iindlela zokulawula ukufakwa: Inciphisa ubukho bokungcola okanye izinto ezifakiweyo, iqinisekisa ukuba isiseko sicocekile.
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Iindlela zokulawula ukuxhathisa: Ivumela ulawulo oluchanekileyo lokuxhathisa umbane, nto leyo ibalulekileyo ekusebenzeni kwesixhobo.
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Iindlela zokulawula ukungcola kunye neendlela zokulawula: Ilawula kwaye inciphise ukungena kokungcola ukuze kugcinwe ukuthembeka kwe-substrate.
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Iindlela zokulawula ububanzi besinyathelo se-substrate: Ibonelela ngolawulo oluchanekileyo kububanzi benyathelo, iqinisekisa ukuhambelana kuyo yonke i-substrate
Iinkcukacha ze-substrate ze-6Inch 4H-semi SiC | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu (um) | 500 ± 15 | 500 ± 25 |
| Uqeqesho lweWafer | Kwi-axis: ± 0.0001° | Kwi-axis: ± 0.05° |
| Uxinano lweeMipayipi ezincinci | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ukuxhathisa (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Uqhelaniso oluPhambili oluSicaba | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ubude obuPhambili obuSicaba | I-Notch | I-Notch |
| Ukukhutshwa komphetho (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| I-LTV / Isitya / I-Warp | ≤ 3 µm | ≤ 3 µm |
| Uburhabaxa | I-Polish Ra ≤ 1.5 µm | I-Polish Ra ≤ 1.5 µm |
| Iitships zomphetho ngokukhanya okuphezulu | ≤ 20 µm | ≤ 60 µm |
| Iipleyiti zobushushu ngokukhanya okuphezulu | Ingqokelela ≤ 0.05% | Iqokelelweyo ≤ 3% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Izinto ezibandakanyiweyo kwiKhabhoni ebonakalayo ≤ 0.05% | Iqokelelweyo ≤ 3% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | ≤ 0.05% | Iqokelelweyo ≤ 4% |
| Iitships zomphetho ngokukhanya okuphezulu (ubukhulu) | Akuvumelekanga > 02 mm Ububanzi kunye nobunzulu | Akuvumelekanga > 02 mm Ububanzi kunye nobunzulu |
| Ukwandisa Isikrufu Sokunceda | ≤ 500 µm | ≤ 500 µm |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
Inkcazelo ye-Substrate ye-SiC eyi-4-Inch eyi-4H-Semi Insulating
| Ipharamitha | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
|---|---|---|
| Iipropati Zomzimba | ||
| Ububanzi | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Uqeqesho lweWafer | Kwi-axis: <600h > 0.5° | Kwi-axis: <000h > 0.5° |
| Iipropati zoMbane | ||
| Uxinano lweeMipayipi ezincinci (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ukuxhathisa | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ukunyamezelana kweJiyomethri | ||
| Uqhelaniso oluPhambili oluSicaba | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Ubude obuPhambili obuSicaba | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ubude obuSicaba beSibini | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ulwazelelelo lweSibini oluSicaba | 90° CW ukusuka kwiPrime flat ± 5.0° (Si ijonge phezulu) | 90° CW ukusuka kwiPrime flat ± 5.0° (Si ijonge phezulu) |
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV / I-TTV / I-Bow / I-Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Umgangatho womphezulu | ||
| Uburhabaxa bomphezulu (iPolish Ra) | ≤1 nm | ≤1 nm |
| Uburhabaxa bomphezulu (i-CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Iingcangca ze-Edge (Ukukhanya okunamandla aphezulu) | Akuvumelekanga | Ubude obuqokelelweyo ≥10 mm, umqhekezo omnye ≤2 mm |
| Iziphene zePlate yeHexagonal | Indawo eqokelelweyo ye-≤0.05% | Indawo eqokelelweyo ye-≤0.1% |
| Iindawo zokubandakanya iiPolytype | Akuvumelekanga | ≤1% indawo eqokelelweyo |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ye-≤0.05% | ≤1% indawo eqokelelweyo |
| Imikrwelo yeSilicon Surface | Akuvumelekanga | ≤1 ububanzi be-wafer ubude obuqokelelweyo |
| Iitships zomphetho | Akukho nto ivumelekileyo (≥0.2 mm ububanzi/ubunzulu) | Iitships ezi-≤5 (nganye ≤1 mm) |
| Ungcoliseko lweSilicon Surface | Ayichazwanga ngqo | Ayichazwanga ngqo |
| Ukupakisha | ||
| Ukupakisha | Ikhasethi yewafer eninzi okanye isitya sewafer enye | Ikhasethi yewafer eninzi okanye |
Isicelo:
IIi-substrates ze-SiC 4H ezithintela ubushushu obuphantsizisetyenziswa kakhulu kwizixhobo ze-elektroniki ezinamandla aphezulu nezisebenza rhoqo, ingakumbi kwiIntsimi ye-RFEzi substrates zibalulekile kwiindlela ezahlukeneyo zokusetyenziswa kuqukaiinkqubo zonxibelelwano ze-microwave, iradar yoluhlu olunezigabakunyeizixhobo zokufumana umbane ezingenazingcingoUkuqhuba kwazo ubushushu obuphezulu kunye neempawu zazo zombane ezibalaseleyo kuzenza zilungele ukusetyenziswa ngokungxamisekileyo kwiinkqubo zombane zamandla kunye nonxibelelwano.
Iimpawu kunye nokusetyenziswa kohlobo lwe-SiC epi wafer 4H-N
Iipropati kunye nezicelo zeSiC 4H-N Type Epi Wafer
Iimpawu zeSiC 4H-N Type Epi Wafer:
Ukwakhiwa kwezinto:
I-SiC (iSilicon Carbide): Yaziwa ngokuba lukhuni kwayo olubalaseleyo, ukuhanjiswa kobushushu obuphezulu, kunye neempawu zombane ezibalaseleyo, iSiC ifanelekile kwizixhobo ze-elektroniki ezisebenza kakuhle.
Uhlobo lwePolytype ye-4H-SiC: I-polytype ye-4H-SiC yaziwa ngokusebenza kwayo okuphezulu kunye nokuzinza kwayo kwizicelo ze-elektroniki.
Unyango lwe-N-type Doping: I-doping yohlobo lwe-N (efakwe i-nitrogen) inika ukuhamba kakuhle kwee-electron, okwenza i-SiC ifaneleke ukusetyenziswa rhoqo kakhulu kunye namandla aphezulu.
Ukuqhuba okuphezulu kobushushu:
Ii-wafer ze-SiC zinomoya ophezulu wokuqhuba ubushushu, zihlala ziqala kwi120–200 W/m·K, nto leyo ebavumela ukuba balawule ubushushu ngokufanelekileyo kwizixhobo ezinamandla aphezulu ezifana nee-transistors kunye nee-diodes.
Isithuba esibanzi sebhendi:
Nge-bandgap ye3.26 eV, I-4H-SiC ingasebenza kwiivolthi eziphezulu, iifrekshini, kunye namaqondo obushushu xa kuthelekiswa nezixhobo zemveli ezisekelwe kwi-silicon, nto leyo eyenza ukuba ilungele ukusetyenziswa ngokusebenza okuphezulu nokusebenza okuphezulu.
Iipropati zoMbane:
Ukuhamba kwe-electron okuphezulu kwe-SiC kunye nokuqhuba kwayo kuyenza ilungele ukusetyenziswaizixhobo zombane zamandla, enika isantya sokutshintsha esikhawulezayo kunye nomthamo ophezulu wokuphatha umbane kunye nombane, nto leyo ekhokelela kwiinkqubo zolawulo lwamandla ezisebenzayo ngakumbi.
Ukumelana noomatshini kunye neekhemikhali:
I-SiC yenye yezona zinto zinzima, ilandela idayimani kuphela, kwaye imelana kakhulu ne-oxidation kunye nokugqwala, nto leyo eyenza ukuba ihlale ixesha elide kwiindawo ezinzima.
Ukusetyenziswa kweSiC 4H-N Type Epi Wafer:
Izixhobo zombane:
Ii-wafers ze-epi zohlobo lwe-SiC 4H-N zisetyenziswa kakhulu kwiamandla e-MOSFET, Ii-IGBTkunyeiidiodengenxaukuguqulwa kwamandlakwiinkqubo ezifanaii-inverters zelanga, izithuthi zombanekunyeiinkqubo zokugcina amandla, enika ukusebenza okuphuculweyo kunye nokonga amandla.
Iimoto zombane (ii-EV):
In ii-powertrains zezithuthi zombane, abalawuli beemotokunyeizikhululo zokutshaja, ii-SiC wafers zinceda ekufezekiseni ukusebenza kakuhle kwebhetri, ukutshaja ngokukhawuleza, kunye nokusebenza ngcono kwamandla ngenxa yokukwazi kwazo ukulawula amandla aphezulu kunye namaqondo obushushu.
Iinkqubo zamandla ahlaziyekayo:
Ii-Inverters zelangaIi-wafer ze-SiC zisetyenziswa kwiiinkqubo zamandla elangayokuguqula amandla e-DC ukusuka kwiiphaneli zelanga ukuya kwi-AC, oko kwandisa ukusebenza kakuhle kwenkqubo kunye nokusebenza kwayo yonke.
Iiturbine zomoyaItekhnoloji yeSiC isetyenziswa kwiiinkqubo zolawulo lwe-turbine yomoya, ukuphucula ukuveliswa kwamandla kunye nokusebenza kakuhle kokuguqula.
Inqwelo-moya kunye noKhuselo:
Ii-wafer ze-SiC zilungele ukusetyenziswaizixhobo zombane zeenqwelo-moyakwayeizicelo zomkhosi, kuqukaiinkqubo zeradarkwayeizixhobo zombane zesathelayithi, apho ukumelana nemitha ephezulu kunye nokuzinza kobushushu kubaluleke kakhulu.
Izicelo zoBushushu obuPhezulu kunye noBukhulu obuPhezulu:
Ii-wafer zeSiC zibalaseleyoizixhobo ze-elektroniki ezishushu kakhulu, isetyenziswa kwiiinjini zeenqwelo-moya, isiphekephekekunyeiinkqubo zokufudumeza kwimizi-mveliso, njengoko zigcina ukusebenza kwazo kwiimeko zobushushu obugqithisileyo. Ukongeza, i-bandgap yazo ebanzi ivumela ukusetyenziswa kwiizicelo ezisetyenziswa rhoqonjengeIzixhobo zeRFkwayeunxibelelwano lwe-microwave.
| Iinkcukacha ze-epit axial ze-intshi ezi-6 | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuhambisa / i-Dopant | - | Uhlobo lwe-N / iNitrogen |
| Umaleko weBuffer | Ubukhulu Bomaleko Webhafa | um | 1 |
| Ukunyamezelana koBuffer Layer Ubungqingqwa | % | ± 20% | |
| Uxinaniso lweLayer yeBuffer | cm-3 | 1.00E+18 | |
| Ukunyamezela Uxinzelelo lweLayer yeBuffer | % | ± 20% | |
| Uleya we-Epi woku-1 | Ubukhulu beLeya ye-Epi | um | 11.5 |
| Ubukhulu be-Epi Layer | % | ±4% | |
| Ukunyamezelana koBungqingqwa beeLayers ze-Epi ((I-Spec- Ubuninzi ，UmNcinci)/Ingcaciso) | % | ±5% | |
| Ugxininiso lwe-Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Ukunyamezelana koXinzelelo lwe-Epi Layer | % | 6% | |
| Ukulingana koXinzelelo lwe-Epi Layer (σ /umyinge) | % | ≤5% | |
| Ukufana koQokelelo lwe-Epi Layer <(ubuninzi-umzuzu)/(ubuninzi+umzuzu> | % | ≤ 10% | |
| Imilo yeWafer ye-Epitaixal | Ukuqubuda | um | ≤±20 |
| I-WARP | um | ≤30 | |
| I-TTV | um | ≤ 10 | |
| I-LTV | um | ≤2 | |
| Iimpawu eziBanzi | Ubude bemikrwelo | mm | ≤30mm |
| Iitships zomphetho | - | AKUKHO | |
| Inkcazo yeziphene | ≥97% （Linganiswe nge-2*2， Iziphene zokubulala ziquka: Iziphene ziquka Iimbhobho ezincinci/Iimbobo ezinkulu, Ikherothi, Unxantathu | ||
| Ungcoliseko lwesinyithi | iiathom/cm² | d f f ll i ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Iphakheji | Iinkcukacha zokupakisha | ii-pcs/ibhokisi | ikhasethi yewafer eninzi okanye isitya sewafer enye |
| Iinkcukacha ze-epitaxial zohlobo lwe-N eziyi-8 intshi | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuhambisa / i-Dopant | - | Uhlobo lwe-N / iNitrogen |
| Umaleko webhafa | Ubukhulu Bomaleko Webhafa | um | 1 |
| Ukunyamezelana koBuffer Layer Ubungqingqwa | % | ± 20% | |
| Uxinaniso lweLayer yeBuffer | cm-3 | 1.00E+18 | |
| Ukunyamezela Uxinzelelo lweLayer yeBuffer | % | ± 20% | |
| Uleya we-Epi woku-1 | Ubungakanani beEpi Layers | um | 8~ 12 |
| Ubukhulu beeLayers ze-Epi Ukulingana (σ/umyinge) | % | ≤2.0 | |
| Ukunyamezelana koBungqingqwa beeLayers ze-Epi ((Spec -Max, Min)/Spec) | % | ±6 | |
| I-Epi Layers Net Avareji Doping | cm-3 | 8E+15 ~2E+16 | |
| I-Epi Layers Net Doping Uniformity (σ/umyinge) | % | ≤5 | |
| Iileya ze-Epi zoNyango lokuNxibelelana ((Spec -Max， | % | ± 10.0 | |
| Imilo yeWafer ye-Epitaixal | Mi )/S ) I-Warp | um | ≤50.0 |
| Ukuqubuda | um | ± 30.0 | |
| I-TTV | um | ≤ 10.0 | |
| I-LTV | um | ≤4.0 (10mm × 10mm) | |
| Jikelele Iimpawu | Imikrwelo | - | Ubude obuqokelelweyo ≤ 1/2 ububanzi beWafer |
| Iitships zomphetho | - | Iitships ezi-≤2, Irediyasi nganye≤1.5mm | |
| Ungcoliseko lweeNyithi eziPhezulu | iiathom/cm2 | ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Uhlolo olupheleleyo lweziphene | % | ≥ 96.0 (Iziphene ze-2X2 ziquka iMicropipe / ii-Large pits, Ikherothi, Iziphene ezinxantathu, Ukuwa, I-Linear/IGSF-s, i-BPD) | |
| Ungcoliseko lweeNyithi eziPhezulu | iiathom/cm2 | ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Iphakheji | Iinkcukacha zokupakisha | - | ikhasethi yewafer eninzi okanye isitya sewafer enye |
Imibuzo neempendulo zeSiC wafer
Umbuzo 1: Ziziphi iingenelo eziphambili zokusebenzisa ii-wafers zeSiC kunee-wafers ze-silicon zemveli kwi-electronics enamandla?
A1:
Ii-wafer zeSiC zibonelela ngeenzuzo ezininzi eziphambili kunee-wafer ze-silicon (Si) zemveli kwi-electronics enamandla, kuquka:
Ukusebenza kakuhle okuphezulu: I-SiC ine-bandgap ebanzi (3.26 eV) xa ithelekiswa ne-silicon (1.1 eV), evumela izixhobo ukuba zisebenze kwiivolthi eziphezulu, iifrequencies, kunye namaqondo obushushu. Oku kukhokelela ekulahlekeni kwamandla okuphantsi kunye nokusebenza kakuhle kwiinkqubo zokuguqula amandla.
Ukuqhuba okuphezulu kobushushu: Ukuqhuba kobushushu beSiC kuphezulu kakhulu kune-silicon, nto leyo evumela ukuchithwa kobushushu okungcono kwizicelo zamandla aphezulu, nto leyo ephucula ukuthembeka kunye nobomi bezixhobo zamandla.
Ulawulo lweVoltage ephezulu kunye noLawulo lwangokuIzixhobo zeSiC zinokuphatha i-voltage ephezulu kunye namanqanaba angoku, nto leyo eyenza ukuba zifaneleke kwizicelo zamandla aphezulu ezifana nezithuthi zombane, iinkqubo zamandla avuselelekayo, kunye neemoto zokuqhuba izimboni.
Isantya Sokutshintsha EsikhawulezayoIzixhobo zeSiC zinamandla okutshintsha ngokukhawuleza, nto leyo enegalelo ekunciphiseni ukulahleka kwamandla kunye nobukhulu benkqubo, nto leyo eyenza ukuba zilungele ukusetyenziswa rhoqo.
Umbuzo 2: Zeziphi iindlela eziphambili zokusetyenziswa kwee-wafers zeSiC kwishishini leemoto?
A2:
Kwishishini leemoto, ii-SiC wafers zisetyenziswa kakhulu kwezi:
Iinjini zombane zeMoto yoMbane (i-EV)Izinto ezisekwe kwiSiC ezifanaii-inverterskwayeamandla e-MOSFETukuphucula ukusebenza kakuhle nokusebenza kweenjini zamandla ezithuthi zombane ngokwenza kube lula ukutshintsha isantya esikhawulezayo kunye noxinano olukhulu lwamandla. Oku kukhokelela kubomi bebhetri obude kunye nokusebenza ngcono kwesithuthi iyonke.
Iitshaja EzisebhodiniIzixhobo zeSiC zinceda ukuphucula ukusebenza kakuhle kweenkqubo zokutshaja ngaphakathi kwinqwelo ngokuvumela amaxesha okutshaja akhawulezileyo kunye nolawulo olungcono lobushushu, nto leyo ibalulekileyo kwii-EV ukuxhasa izikhululo zokutshaja ezinamandla aphezulu.
Iinkqubo zoLawulo lweeBhetri (i-BMS): Itekhnoloji yeSiC iphucula ukusebenza kakuhle kweiinkqubo zolawulo lwebhetri, okuvumela ulawulo olungcono lwe-voltage, ukuphathwa kwamandla aphezulu, kunye nobomi bebhetri obude.
Ii-DC-DC ConvertersIi-wafer ze-SiC zisetyenziswa kwiAbaguquli be-DC-DCukuguqula amandla e-DC ane-voltage ephezulu abe ngamandla e-DC ane-voltage ephantsi ngokufanelekileyo, nto leyo ibalulekileyo kwizithuthi zombane ukulawula amandla ukusuka kwibhetri ukuya kwizinto ezahlukeneyo kwisithuthi.
Ukusebenza okuphezulu kweSiC kwiindlela zombane ophezulu, ubushushu obuphezulu, kunye nokusebenza kakuhle kwenza kube yimfuneko ekutshintsheleni kushishino lweemoto ukuya ekuhambeleni kombane.
Iinkcukacha ze-SiC wafer eziyi-6 intshi eziyi-4H-N | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ibanga | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Uqeqesho lweWafer | I-axis evaliweyo: 4.0° ukuya <1120> ± 0.5° | I-axis evaliweyo: 4.0° ukuya <1120> ± 0.5° |
| Uxinano lweeMipayipi ezincinci | ≤ 0.2 cm² | ≤ 15 cm² |
| Ukuxhathisa | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Uqhelaniso oluPhambili oluSicaba | [10-10] ± 50° | [10-10] ± 50° |
| Ubude obuPhambili obuSicaba | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV/TIV / I-Bow / I-Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Uburhabaxa | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Iimfanta zoMphetho ngokukhanya okuphezulu | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm |
| Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 0.1% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 3% |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 5% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | Ubude obuqokelelweyo ≤ ububanzi bewafer e-1 | |
| Iitships zomphetho ngokukhanya okuphezulu | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.2 mm | 7 zivunyelwe, ≤ 1 mm nganye |
| Ukusasazeka kweSikrufu sokuNxibelelanisa | < 500 cm³ | < 500 cm³ |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ||
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
Iinkcukacha ze-SiC wafer ze-8intshi 4H-N | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ibanga | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Uqeqesho lweWafer | 4.0° ukuya <110> ± 0.5° | 4.0° ukuya <110> ± 0.5° |
| Uxinano lweeMipayipi ezincinci | ≤ 0.2 cm² | ≤ 5 cm² |
| Ukuxhathisa | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Uqeqesho Oluhle | ||
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV/TIV / I-Bow / I-Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Uburhabaxa | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Iimfanta zoMphetho ngokukhanya okuphezulu | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm | Ubude obuqokelelweyo ≤ 20 mm ubude obunye ≤ 2 mm |
| Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 0.1% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 3% |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ≤ 0.05% | Indawo eqokelelweyo ≤ 5% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | Ubude obuqokelelweyo ≤ ububanzi bewafer e-1 | |
| Iitships zomphetho ngokukhanya okuphezulu | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.2 mm | 7 zivunyelwe, ≤ 1 mm nganye |
| Ukusasazeka kweSikrufu sokuNxibelelanisa | < 500 cm³ | < 500 cm³ |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ||
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
Iinkcukacha ze-substrate ze-6Inch 4H-semi SiC | ||
| Ipropati | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
| Ububanzi (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu (um) | 500 ± 15 | 500 ± 25 |
| Uqeqesho lweWafer | Kwi-axis: ± 0.0001° | Kwi-axis: ± 0.05° |
| Uxinano lweeMipayipi ezincinci | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ukuxhathisa (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Uqhelaniso oluPhambili oluSicaba | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ubude obuPhambili obuSicaba | I-Notch | I-Notch |
| Ukukhutshwa komphetho (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| I-LTV / Isitya / I-Warp | ≤ 3 µm | ≤ 3 µm |
| Uburhabaxa | I-Polish Ra ≤ 1.5 µm | I-Polish Ra ≤ 1.5 µm |
| Iitships zomphetho ngokukhanya okuphezulu | ≤ 20 µm | ≤ 60 µm |
| Iipleyiti zobushushu ngokukhanya okuphezulu | Ingqokelela ≤ 0.05% | Iqokelelweyo ≤ 3% |
| Iindawo zePolytype Ngokukhanya Okuphezulu | Izinto ezibandakanyiweyo kwiKhabhoni ebonakalayo ≤ 0.05% | Iqokelelweyo ≤ 3% |
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | ≤ 0.05% | Iqokelelweyo ≤ 4% |
| Iitships zomphetho ngokukhanya okuphezulu (ubukhulu) | Akuvumelekanga > 02 mm Ububanzi kunye nobunzulu | Akuvumelekanga > 02 mm Ububanzi kunye nobunzulu |
| Ukwandisa Isikrufu Sokunceda | ≤ 500 µm | ≤ 500 µm |
| Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye |
Inkcazelo ye-Substrate ye-SiC eyi-4-Inch eyi-4H-Semi Insulating
| Ipharamitha | Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) | Udidi oluyiDummy (Udidi D) |
|---|---|---|
| Iipropati Zomzimba | ||
| Ububanzi | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Uhlobo lwePoly | 4H | 4H |
| Ubukhulu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Uqeqesho lweWafer | Kwi-axis: <600h > 0.5° | Kwi-axis: <000h > 0.5° |
| Iipropati zoMbane | ||
| Uxinano lweeMipayipi ezincinci (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ukuxhathisa | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ukunyamezelana kweJiyomethri | ||
| Uqhelaniso oluPhambili oluSicaba | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Ubude obuPhambili obuSicaba | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ubude obuSicaba beSibini | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ulwazelelelo lweSibini oluSicaba | 90° CW ukusuka kwiPrime flat ± 5.0° (Si ijonge phezulu) | 90° CW ukusuka kwiPrime flat ± 5.0° (Si ijonge phezulu) |
| Ukukhutshwa komda | 3 mm | 3 mm |
| I-LTV / I-TTV / I-Bow / I-Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Umgangatho womphezulu | ||
| Uburhabaxa bomphezulu (iPolish Ra) | ≤1 nm | ≤1 nm |
| Uburhabaxa bomphezulu (i-CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Iingcangca ze-Edge (Ukukhanya okunamandla aphezulu) | Akuvumelekanga | Ubude obuqokelelweyo ≥10 mm, umqhekezo omnye ≤2 mm |
| Iziphene zePlate yeHexagonal | Indawo eqokelelweyo ye-≤0.05% | Indawo eqokelelweyo ye-≤0.1% |
| Iindawo zokubandakanya iiPolytype | Akuvumelekanga | ≤1% indawo eqokelelweyo |
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ye-≤0.05% | ≤1% indawo eqokelelweyo |
| Imikrwelo yeSilicon Surface | Akuvumelekanga | ≤1 ububanzi be-wafer ubude obuqokelelweyo |
| Iitships zomphetho | Akukho nto ivumelekileyo (≥0.2 mm ububanzi/ubunzulu) | Iitships ezi-≤5 (nganye ≤1 mm) |
| Ungcoliseko lweSilicon Surface | Ayichazwanga ngqo | Ayichazwanga ngqo |
| Ukupakisha | ||
| Ukupakisha | Ikhasethi yewafer eninzi okanye isitya sewafer enye | Ikhasethi yewafer eninzi okanye |
| Iinkcukacha ze-epit axial ze-intshi ezi-6 | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuhambisa / i-Dopant | - | Uhlobo lwe-N / iNitrogen |
| Umaleko weBuffer | Ubukhulu Bomaleko Webhafa | um | 1 |
| Ukunyamezelana koBuffer Layer Ubungqingqwa | % | ± 20% | |
| Uxinaniso lweLayer yeBuffer | cm-3 | 1.00E+18 | |
| Ukunyamezela Uxinzelelo lweLayer yeBuffer | % | ± 20% | |
| Uleya we-Epi woku-1 | Ubukhulu beLeya ye-Epi | um | 11.5 |
| Ubukhulu be-Epi Layer | % | ±4% | |
| Ukunyamezelana koBungqingqwa beeLayers ze-Epi ((I-Spec- Ubuninzi ，UmNcinci)/Ingcaciso) | % | ±5% | |
| Ugxininiso lwe-Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Ukunyamezelana koXinzelelo lwe-Epi Layer | % | 6% | |
| Ukulingana koXinzelelo lwe-Epi Layer (σ /umyinge) | % | ≤5% | |
| Ukufana koQokelelo lwe-Epi Layer <(ubuninzi-umzuzu)/(ubuninzi+umzuzu> | % | ≤ 10% | |
| Imilo yeWafer ye-Epitaixal | Ukuqubuda | um | ≤±20 |
| I-WARP | um | ≤30 | |
| I-TTV | um | ≤ 10 | |
| I-LTV | um | ≤2 | |
| Iimpawu eziBanzi | Ubude bemikrwelo | mm | ≤30mm |
| Iitships zomphetho | - | AKUKHO | |
| Inkcazo yeziphene | ≥97% （Linganiswe nge-2*2， Iziphene zokubulala ziquka: Iziphene ziquka Iimbhobho ezincinci/Iimbobo ezinkulu, Ikherothi, Unxantathu | ||
| Ungcoliseko lwesinyithi | iiathom/cm² | d f f ll i ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Iphakheji | Iinkcukacha zokupakisha | ii-pcs/ibhokisi | ikhasethi yewafer eninzi okanye isitya sewafer enye |
| Iinkcukacha ze-epitaxial zohlobo lwe-N eziyi-8 intshi | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuhambisa / i-Dopant | - | Uhlobo lwe-N / iNitrogen |
| Umaleko webhafa | Ubukhulu Bomaleko Webhafa | um | 1 |
| Ukunyamezelana koBuffer Layer Ubungqingqwa | % | ± 20% | |
| Uxinaniso lweLayer yeBuffer | cm-3 | 1.00E+18 | |
| Ukunyamezela Uxinzelelo lweLayer yeBuffer | % | ± 20% | |
| Uleya we-Epi woku-1 | Ubungakanani beEpi Layers | um | 8~ 12 |
| Ubukhulu beeLayers ze-Epi Ukulingana (σ/umyinge) | % | ≤2.0 | |
| Ukunyamezelana koBungqingqwa beeLayers ze-Epi ((Spec -Max, Min)/Spec) | % | ±6 | |
| I-Epi Layers Net Avareji Doping | cm-3 | 8E+15 ~2E+16 | |
| I-Epi Layers Net Doping Uniformity (σ/umyinge) | % | ≤5 | |
| Iileya ze-Epi zoNyango lokuNxibelelana ((Spec -Max， | % | ± 10.0 | |
| Imilo yeWafer ye-Epitaixal | Mi )/S ) I-Warp | um | ≤50.0 |
| Ukuqubuda | um | ± 30.0 | |
| I-TTV | um | ≤ 10.0 | |
| I-LTV | um | ≤4.0 (10mm × 10mm) | |
| Jikelele Iimpawu | Imikrwelo | - | Ubude obuqokelelweyo ≤ 1/2 ububanzi beWafer |
| Iitships zomphetho | - | Iitships ezi-≤2, Irediyasi nganye≤1.5mm | |
| Ungcoliseko lweeNyithi eziPhezulu | iiathom/cm2 | ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Uhlolo olupheleleyo lweziphene | % | ≥ 96.0 (Iziphene ze-2X2 ziquka iMicropipe / ii-Large pits, Ikherothi, Iziphene ezinxantathu, Ukuwa, I-Linear/IGSF-s, i-BPD) | |
| Ungcoliseko lweeNyithi eziPhezulu | iiathom/cm2 | ≤5E10 iiathom/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca kunye neMn) | |
| Iphakheji | Iinkcukacha zokupakisha | - | ikhasethi yewafer eninzi okanye isitya sewafer enye |
Umbuzo 1: Ziziphi iingenelo eziphambili zokusebenzisa ii-wafers zeSiC kunee-wafers ze-silicon zemveli kwi-electronics enamandla?
A1:
Ii-wafer zeSiC zibonelela ngeenzuzo ezininzi eziphambili kunee-wafer ze-silicon (Si) zemveli kwi-electronics enamandla, kuquka:
Ukusebenza kakuhle okuphezulu: I-SiC ine-bandgap ebanzi (3.26 eV) xa ithelekiswa ne-silicon (1.1 eV), evumela izixhobo ukuba zisebenze kwiivolthi eziphezulu, iifrequencies, kunye namaqondo obushushu. Oku kukhokelela ekulahlekeni kwamandla okuphantsi kunye nokusebenza kakuhle kwiinkqubo zokuguqula amandla.
Ukuqhuba okuphezulu kobushushu: Ukuqhuba kobushushu beSiC kuphezulu kakhulu kune-silicon, nto leyo evumela ukuchithwa kobushushu okungcono kwizicelo zamandla aphezulu, nto leyo ephucula ukuthembeka kunye nobomi bezixhobo zamandla.
Ulawulo lweVoltage ephezulu kunye noLawulo lwangokuIzixhobo zeSiC zinokuphatha i-voltage ephezulu kunye namanqanaba angoku, nto leyo eyenza ukuba zifaneleke kwizicelo zamandla aphezulu ezifana nezithuthi zombane, iinkqubo zamandla avuselelekayo, kunye neemoto zokuqhuba izimboni.
Isantya Sokutshintsha EsikhawulezayoIzixhobo zeSiC zinamandla okutshintsha ngokukhawuleza, nto leyo enegalelo ekunciphiseni ukulahleka kwamandla kunye nobukhulu benkqubo, nto leyo eyenza ukuba zilungele ukusetyenziswa rhoqo.
Umbuzo 2: Zeziphi iindlela eziphambili zokusetyenziswa kwee-wafers zeSiC kwishishini leemoto?
A2:
Kwishishini leemoto, ii-SiC wafers zisetyenziswa kakhulu kwezi:
Iinjini zombane zeMoto yoMbane (i-EV)Izinto ezisekwe kwiSiC ezifanaii-inverterskwayeamandla e-MOSFETukuphucula ukusebenza kakuhle nokusebenza kweenjini zamandla ezithuthi zombane ngokwenza kube lula ukutshintsha isantya esikhawulezayo kunye noxinano olukhulu lwamandla. Oku kukhokelela kubomi bebhetri obude kunye nokusebenza ngcono kwesithuthi iyonke.
Iitshaja EzisebhodiniIzixhobo zeSiC zinceda ukuphucula ukusebenza kakuhle kweenkqubo zokutshaja ngaphakathi kwinqwelo ngokuvumela amaxesha okutshaja akhawulezileyo kunye nolawulo olungcono lobushushu, nto leyo ibalulekileyo kwii-EV ukuxhasa izikhululo zokutshaja ezinamandla aphezulu.
Iinkqubo zoLawulo lweeBhetri (i-BMS): Itekhnoloji yeSiC iphucula ukusebenza kakuhle kweiinkqubo zolawulo lwebhetri, okuvumela ulawulo olungcono lwe-voltage, ukuphathwa kwamandla aphezulu, kunye nobomi bebhetri obude.
Ii-DC-DC ConvertersIi-wafer ze-SiC zisetyenziswa kwiAbaguquli be-DC-DCukuguqula amandla e-DC ane-voltage ephezulu abe ngamandla e-DC ane-voltage ephantsi ngokufanelekileyo, nto leyo ibalulekileyo kwizithuthi zombane ukulawula amandla ukusuka kwibhetri ukuya kwizinto ezahlukeneyo kwisithuthi.
Ukusebenza okuphezulu kweSiC kwiindlela zombane ophezulu, ubushushu obuphezulu, kunye nokusebenza kakuhle kwenza kube yimfuneko ekutshintsheleni kushishino lweemoto ukuya ekuhambeleni kombane.
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