SiC
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I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
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4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
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I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
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I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.
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3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
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I-P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch ekhoyo
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm ukupolishwa kwamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
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SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
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ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso