I-SiC
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I-12 intshi ye-SIC substrate i-silicon carbide prime grade diameter 300mm enkulu ubukhulu 4H-N Ifanelekile ukusasaza ubushushu besixhobo esinamandla aphezulu
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I-wafer ye-SiC ye-silicon carbide ye-intshi ezi-8 4H-N uhlobo lwe-0.5mm grade grade yophando lwe-substrate eyenziwe ngokwezifiso
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I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm yePower Electronics
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I-3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulation （HPSI）SiC wafer 350um Dummy grade I-Prime grade
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I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch
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IiWafers zeSiC zeSilicon Carbide ezingama-8 intshi ezingama-200mm Uhlobo lwemveliso 4H-N ubukhulu obungama-500um
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
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I-HPSI SiC Wafer ≥90% Udidi lwe-Transmittance Optical kwiiglasi ze-AI/AR
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I-Silicon Carbide (SiC) Substrate Ecocekileyo Kakhulu Yeeglasi ze-Ar
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IiWafers ze-4H-SiC Epitaxial ze-Ultra-High Voltage MOSFETs (100–500 μm, 6 intshi)
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I-SICOI (iSilicon Carbide kwi-Insulator) IiWafers zeSiC Film kwiSilicon