SiC
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I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu
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I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.
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I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
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3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
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I-P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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ISilicon Carbide (SiC) ISubstrate yeCrystal enye-10×10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer for MOS okanye SBD
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I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene
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4H-N Uhlobo lweSiC Epitaxial Wafer High Voltage High Frequency
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I-intshi ezi-3 zoKucoceka okuPhezulu (Akungatshitshiswanga) iSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)