SiC

I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu
I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.
I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
I-P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha
8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
I-SiC ceramic end effector enikezela ingalo yokuphatha iwafer
SiC ceramic ipleyiti / itreyi for 4inch 6inch isibambi wafer for ICP
I-intshi ezi-3 zoKucoceka okuPhezulu (Akungatshitshiswanga) iSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

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