SiC
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ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
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SiC Ingot 4H-N uhlobo Dummy ibakala 2inch 3inch 4inch 6inch ubukhulu:＞10mm
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I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
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3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
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I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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2inch Silicon Carbide Wafer 6H-N Uhlobo lwePrime iBanga loPhando IBanga leDummy iBanga 330μm 430μm Ukutyeba
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I-2inch ye-silicon carbide substrate 6H-N enamacala amabini akhazimlisiweyo ububanzi 50.8mm ibakala lophando lwemveliso
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I-N-Type SiC Composite Substrates Dia6inch Umgangatho ophezulu we-monocrystaline kunye ne-substrate ephantsi yomgangatho
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ISemi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha
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N-Udidi lweSiC kwiSi Composite Substrates Dia6inch