SiC
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I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
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4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
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I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu
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I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane
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I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.
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3inch Ucoceko oluphezulu lweSemi-Insulating (HPSI) SiC wafer 350um Dummy ibakala Prime
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I-P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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Ii-intshi ezi-3 eziPhezulu (Azingatshitshiswanga) ii-Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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Iwafer eqatywe iAu, isafire, isilicon, iSiC, 2inch 4inch 6inch, ukutyeba kwegolide 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch