I-HPSI SiC Wafer ≥90% Udidi lwe-Transmittance Optical kwiiglasi ze-AI/AR

I-HPSI SiC Wafer ≥90% Udidi lwe-Transmittance Optical lweeGlasi ze-AI/AR Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ipharamitha	Ibanga	I-substrate ye-intshi ezi-4	I-substrate ye-intshi ezi-6
Ububanzi	Ibanga le-Z / iBanga le-D	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
Uhlobo lwePoly	Ibanga le-Z / iBanga le-D	4H	4H
Ubukhulu	Ibanga lika-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	Ibanga le-D	500 μm ± 25 μm	500 μm ± 25 μm
Ukuqhelaniswa kweWafer	Ibanga le-Z / iBanga le-D	Kwi-axis: <0001> ± 0.5°	Kwi-axis: <0001> ± 0.5°
Ubuninzi beMicropipe	Ibanga lika-Z	≤ 1 cm²	≤ 1 cm²
Ubuninzi beMicropipe	Ibanga le-D	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga lika-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	Ibanga le-D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Thumela i-imeyile kuthi

Iimbonakalo

Intshayelelo ePhambili: Indima yeeWafers zeHPSI SiC kwiiglasi ze-AI/AR

Ii-wafer zeSilicon Carbide zeHPSI (High-Purity Semi-Insulating) zii-wafers ezikhethekileyo eziphawulwa kukumelana okuphezulu (>10⁹ Ω·cm) kunye noxinano oluphantsi kakhulu lwesiphene. Kwiiglasi ze-AI/AR, ngokuyintloko zisebenza njengezinto ezisisiseko ze-substrate zeelensi ze-optical waveguide diffractive, zijongana neengxaki ezinxulumene nezixhobo ze-optical zendabuko ngokwezinto ezincinci nezikhanyayo, ukusasazwa kobushushu, kunye nokusebenza kwe-optical. Umzekelo, iiglasi ze-AR ezisebenzisa iilensi ze-SiC waveguide zinokufikelela kwi-ultra-wide field of view (FOV) ye-70°–80°, ngelixa zinciphisa ubukhulu belensi enye ukuya kwi-0.55mm kunye nobunzima ukuya kwi-2.7g kuphela, nto leyo ephucula kakhulu intuthuzelo yokunxiba kunye nokuntywiliselwa emehlweni.

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Iimpawu eziphambili: Indlela iSiC Material enika amandla ngayo uyilo lweeglasi ze-AI/AR

I-High Refractive Index kunye ne-Optical Performance Optimization

Isalathisi sokukhanyela (2.6–2.7) seSiC siphezulu phantse ngama-50% kuneseglasi yendabuko (1.8–2.0). Oku kuvumela izakhiwo zesikhokelo samaza ezibhityileyo nezisebenza kakuhle, nto leyo eyandisa kakhulu i-FOV. Isalathisi sokukhanyela esiphezulu sikwanceda ekucinezeleni "isiphumo somnyama" esiqhelekileyo kwiisikhokelo zamaza ezisasazekayo, nto leyo ephucula ubumsulwa bomfanekiso.

Amandla oLawulo oluPhezulu lweThermal

Ngombane ohamba ngobushushu ofikelela kwi-490 W/m·K (phantse nowethusi), i-SiC inokususa ngokukhawuleza ubushushu obuveliswa ziimodyuli ze-Micro-LED display. Oku kuthintela ukonakala kokusebenza okanye ukuguga kwesixhobo ngenxa yobushushu obuphezulu, okuqinisekisa ubomi bebhetri obude kunye nozinzo oluphezulu.

Amandla oomatshini kunye nokuhlala ixesha elide

I-SiC inobunzima be-Mohs obuyi-9.5 (ilandela idayimani kuphela), inika ukumelana okungaqhelekanga kokukrwela, nto leyo eyenza ukuba ilungele iiglasi ezisetyenziswa rhoqo. Uburhabaxa bayo bomphezulu bunokulawulwa ukuya kwi-Ra < 0.5 nm, ukuqinisekisa ukuhanjiswa kokukhanya okufanayo kwii-waveguides.

Ukuhambelana kwePropati yoMbane

Ukumelana kwe-HPSI SiC (>10⁹ Ω·cm) kunceda ukuthintela ukuphazamiseka kwesignali. Ingasebenza njengesixhobo sombane esisebenzayo, iphucula iimodyuli zolawulo lwamandla kwiiglasi ze-AR.

Imiyalelo yesicelo esiphambili

Izinto eziphambili ze-Optical ze-AI/AR Glasses

Iilensi zeDiffractive Waveguide: Ii-substrates zeSiC zisetyenziselwa ukwenza ii-waveguide ze-optical ezibhityileyo kakhulu ezixhasa i-FOV enkulu kunye nokususa isiphumo se-rainbow.
Iipleyiti zefestile kunye neePrism: Ngokusika nokupolisha ngokwezifiso, iSiC ingacutshungulwa ibe ziifestile ezikhuselayo okanye iiprism ezibonakalayo zeeglasi ze-AR, nto leyo ephucula ukuhanjiswa kokukhanya kunye nokumelana nokuguguleka.

Izicelo Ezandisiweyo Kwezinye Iinkalo

I-Power Electronics: Isetyenziswa kwiimeko ezisebenzisa amandla amaninzi, ezifana nee-inverters ezintsha zezithuthi zamandla kunye nolawulo lweemoto zoshishino.
I-Quantum Optics: Isebenza njengomgcini weendawo zombala, isetyenziswa kwizixhobo zonxibelelwano lwe-quantum kunye nezixhobo zokuva.

Uthelekiso lweeNkcukacha ze-HPSI SiC Substrate ezi-4 intshi kunye nezi-6 intshi

Ipharamitha	Ibanga	I-substrate ye-intshi ezi-4	I-substrate ye-intshi ezi-6
Ububanzi	Ibanga le-Z / iBanga le-D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Uhlobo lwePoly	Ibanga le-Z / iBanga le-D	4H	4H
Ubukhulu	Ibanga lika-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	Ibanga le-D	500 μm ± 25 μm	500 μm ± 25 μm
Ukuqhelaniswa kweWafer	Ibanga le-Z / iBanga le-D	Kwi-axis: <0001> ± 0.5°	Kwi-axis: <0001> ± 0.5°
Ubuninzi beMicropipe	Ibanga lika-Z	≤ 1 cm²	≤ 1 cm²
Ubuninzi beMicropipe	Ibanga le-D	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga lika-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	Ibanga le-D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Isikhokelo esiSiseko esiPhambili	Ibanga le-Z / iBanga le-D	(10-10) ± 5.0°	(10-10) ± 5.0°
Ubude obuPhambili obuSicaba	Ibanga le-Z / iBanga le-D	32.5 mm ± 2.0 mm	I-Notch
Ubude obuSicaba beSibini	Ibanga le-Z / iBanga le-D	18.0 mm ± 2.0 mm	-
Ukukhutshwa komda	Ibanga le-Z / iBanga le-D	3 mm	3 mm
I-LTV / i-TTV / iBow / iWarp	Ibanga lika-Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
I-LTV / i-TTV / iBow / iWarp	Ibanga le-D	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Uburhabaxa	Ibanga lika-Z	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Uburhabaxa	Ibanga le-D	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Iingcangca zomphetho	Ibanga le-D	Indawo eqokelelweyo ≤ 0.1%	Ubude obuqokelelweyo ≤ 20 mm, enye ≤ 2 mm
Iindawo zePolytype	Ibanga le-D	Indawo eqokelelweyo ≤ 0.3%	Indawo eqokelelweyo ≤ 3%
Izinto ezibandakanyiweyo zeCarbon ebonakalayo	Ibanga lika-Z	Indawo eqokelelweyo ≤ 0.05%	Indawo eqokelelweyo ≤ 0.05%
Izinto ezibandakanyiweyo zeCarbon ebonakalayo	Ibanga le-D	Indawo eqokelelweyo ≤ 0.3%	Indawo eqokelelweyo ≤ 3%
Imikrwelo yeSilicon Surface	Ibanga le-D	5 zivumelekile, nganye ≤1mm	Ubude obuqokelelweyo ≤ 1 x ububanzi
Iitships ze-Edge	Ibanga lika-Z	Akukho nto ivumelekileyo (ububanzi nobunzulu ≥0.2mm)	Akukho nto ivumelekileyo (ububanzi nobunzulu ≥0.2mm)
Iitships ze-Edge	Ibanga le-D	7 zivunyelwe, nganye ≤1mm	7 zivunyelwe, nganye ≤1mm
Ukususwa kweSikrufu sokuTshintsha imisonto	Ibanga lika-Z	-	≤ 500 cm²
Ukupakisha	Ibanga le-Z / iBanga le-D	Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye	Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye

Iinkonzo ze-XKH: Amandla okuVelisa kunye nokuLungisa ngokuHlangeneyo

Inkampani ye-XKH inamandla okudibanisa ngokuthe nkqo ukusuka kwizinto eziluhlaza ukuya kwii-wafers ezigqityiweyo, ezigubungela lonke uthotho lokukhula kwe-SiC substrate, ukunqunqa, ukupolisha, kunye nokucutshungulwa ngokwezifiso. Iingenelo eziphambili zenkonzo ziquka:

Ukwahlukahluka kwezinto:Singabonelela ngeentlobo ezahlukeneyo ze-wafer ezifana nohlobo lwe-4H-N, uhlobo lwe-4H-HPSI, uhlobo lwe-4H/6H-P, kunye nohlobo lwe-3C-N. Ukumelana, ubukhulu, kunye nokujonga kunokulungiswa ngokweemfuno.
.Uhlengahlengiso lobungakanani obuguquguqukayo:Sixhasa ukucutshungulwa kwe-wafer ukusuka kwiisentimitha ezi-2 ukuya kwiisentimitha ezili-12, kwaye sinokucutshungulwa nezakhiwo ezikhethekileyo ezifana neziqwenga zesikwere (umz., 5x5mm, 10x10mm) kunye neeprism ezingaqhelekanga.
Ulawulo Lokuchaneka Kwezinga Lokukhanya:I-Wafer Total Thickness Variation (TTV) inokugcinwa kwi-<1μm, kunye ne-surface roughness kwi-Ra < 0.3 nm, ukuhlangabezana neemfuno ze-nano-level flatness zezixhobo ze-waveguide.
Impendulo ekhawulezayo kwiMarike:Imodeli yeshishini edibeneyo iqinisekisa utshintsho olusebenzayo ukusuka kwi-R&D ukuya kwimveliso enkulu, ixhasa yonke into ukusuka ekuqinisekisweni kwebhetshi encinci ukuya ekuthunyelweni okukhulu (ixesha lokukhokela lihlala liziintsuku ezili-15-40).

Imibuzo ebuzwa rhoqo nge-HPSI SiC Wafer

Umbuzo 1: Kutheni i-HPSI SiC ithathwa njengesixhobo esifanelekileyo kwiilensi ze-AR waveguide?
A1: Isalathisi sayo esiphezulu sokurhawuzelela (2.6–2.7) senza izakhiwo ezibhityileyo nezisebenza kakuhle ze-waveguide ezixhasa intsimi enkulu yombono (umz., 70°–80°) ngelixa zisusa "isiphumo somnyama".
Umbuzo 2: I-HPSI SiC iluphucula njani ulawulo lobushushu kwiiglasi ze-AI/AR?
A2: Ngombane oqhuba ubushushu ofikelela kwi-490 W/m·K (kufuphi nobhedu), isusa ubushushu ngokufanelekileyo kwiindawo ezifana neeMicro-LED, iqinisekisa ukusebenza okuzinzileyo kunye nobomi bexesha elide besixhobo.
Umbuzo 3: Zeziphi iingenelo zokuqina ezibonelelwa yiHPSI SiC kwiiglasi ezinxitywayo?
A3: Ubunzima bayo obungaqhelekanga (Mohs 9.5) bubonelela ngokumelana nokukrwela okungcono, nto leyo eyenza ukuba ihlale ixesha elide xa isetyenziswa imihla ngemihla kwiiglasi ze-AR ezisetyenziswa ngabathengi.