Ipatheni yeSapphire Substrate PSS 2inch 4inch 6inch ICP eyomileyo etching ingasetyenziselwa chips LED

Ipatheni yeSapphire Substrate PSS 2inch 4inch 6inch ICP eyomileyo etching ingasetyenziselwa iichips zeLED Featured Image

Inkcazelo emfutshane:

I-Pattered sapphire substrate (PSS) i-substrate apho i-micro kunye ne-nano structures zenziwe nge-lithography kunye nobuchule be-etching. Isetyenziswa ikakhulu kwi-LED (i-light emitting diode) yokuvelisa ukuphucula ukukhanya kokukhanya ngokuyilwa komfanekiso womphezulu, ngaloo ndlela kuphuculwe ukuqaqamba kunye nokusebenza kwe-LED.

Thumela i-imeyile kuthi

Iimbonakalo

Uphawu olungundoqo

1. Iimpawu zezinto eziphathekayo: I-substrate i-sapphire enye ye-crystal (Al₂O₃), enobunzima obuphezulu, ukuchasana nokushisa okuphezulu kunye nokuzinza kweekhemikhali.

2. Isakhiwo somphezulu: Umphezulu wenziwa nge-photolithography kunye nokufaka kwi-periodic micro-nano izakhiwo, ezifana neecones, iipiramidi okanye i-hexagonal arrays.

3. Ukusebenza kwe-Optical: Ngoyilo lwepatheni yomhlaba, ukubonakaliswa okupheleleyo kokukhanya kwi-interface kuncitshisiwe, kunye nokusebenza kakuhle kokukhutshwa kokukhanya kuphuculwe.

4. Ukusebenza kwe-Thermal: I-Sapphire substrate ine-conductivity egqwesileyo ye-thermal, ifanelekile kwizicelo zamandla aphezulu e-LED.

5. Iinkcukacha zobungakanani: Iisayizi eziqhelekileyo ziyi-2 intshi (50.8mm), 4 intshi (100mm) kunye ne-6 intshi (150mm).

Iindawo zesicelo eziphambili

1. Ukwenziwa kwe-LED:
Ukuphuculwa kokusebenza kokukhanya: I-PSS inciphisa ilahleko yokukhanya ngokuyila ipateni, iphucula kakhulu ukukhanya kwe-LED kunye nokusebenza kakuhle okukhanyayo.

Ukuphuculwa komgangatho wokukhula kwe-epitaxial: Ubume bepateni bubonelela ngesiseko esingcono sokukhula kwe-GaN epitaxial layers kunye nokuphucula ukusebenza kwe-LED.

2. I-Laser Diode (LD) :
I-laser yamandla aphezulu: I-conductivity ephezulu ye-thermal kunye nokuzinza kwe-PSS ifanelekile kumandla aphezulu e-laser diode, ukuphucula ukusebenza kokutshatyalaliswa kobushushu kunye nokuthembeka.

I-low threshold current: Lungiselela ukukhula kwe-epitaxial, ukunciphisa i-threshold current ye-laser diode, kunye nokuphucula ukusebenza kakuhle.

3. Isikhangeli sefoto:
Uvakalelo oluphezulu: Ukuhanjiswa kokukhanya okuphezulu kunye noxinzelelo oluphantsi lwe-PSS luphucula uvakalelo kunye nesantya sokuphendula se-photodetector.

Impendulo ebanzi ye-spectral: ilungele ukubonwa kwe-photoelectric kwi-ultraviolet kuluhlu olubonakalayo.

4. Ii-elektroniki zamandla:
Ukumelana nombane ophakamileyo: Ukugquma okuphezulu kweSapphire kunye nokuzinza kwe-thermal zilungele izixhobo zamandla ombane aphezulu.

Ukutshatyalaliswa kobushushu obusebenzayo: Ukuhanjiswa okuphezulu kwe-thermal kuphucula ukusebenza kokushisa kwezixhobo zamandla kunye nokwandisa ubomi benkonzo.

5. Izixhobo ze-RF:
Ukusebenza kwamafrikhwensi aphezulu: Ilahleko yedielectric ephantsi kunye nokuzinza okuphezulu kwe-thermal ye-PSS zifanelekile kwizixhobo ze-RF eziphezulu.

Ingxolo ephantsi: Ukuba tyaba okuphezulu kunye noxinzelelo oluphantsi lwesiphene kunciphisa ingxolo yesixhobo kunye nokuphucula umgangatho wesignali.

6. Ii-Biosensor:
Ukubona uvakalelo oluphezulu: Ukuhanjiswa kokukhanya okuphezulu kunye nokuzinza kweekhemikhali ze-PSS zifanelekile kwi-biosensors ephezulu.

I-Biocompatibility: I-biocompatibility yesafire yenza ukuba ifaneleke kwizicelo zonyango kunye ne-biodetection.
Inxalenye yesafire enepateni (PSS) enemathiriyeli ye-GaN epitaxial:

I-Pattered sapphire substrate (PSS) yeyona substrate ifanelekileyo ye-GaN (gallium nitride) ukukhula kwe-epitaxial. I-lattice engaguqukiyo yesafire isondele kwi-GaN, enokunciphisa ukungahambi kakuhle kwe-lattice kunye neziphene ekukhuleni kwe-epitaxial. Isakhiwo se-micro-nano sobuso be-PSS asiphuculi kuphela ukukhanya kwe-extraction, kodwa siphucula umgangatho we-crystal we-GaN epitaxial layer, ngaloo ndlela iphucula ukusebenza kunye nokuthembeka kwe-LED.

Imilinganiselo yobugcisa

Into	ISapphire Substrate enePatheni (2~6inch)
Ububanzi	50.8 ± 0.1 mm	100.0 ± 0.2 mm	150.0 ± 0.3 mm
Ukutyeba	430 ± 25μm	650 ± 25μm	1000 ± 25μm
Ukuqhelaniswa nomphezulu	I-C-plane (0001) i-off-angle ukuya ku-M-axis (10-10) 0.2 ± 0.1°
	I-C-plane (0001) i-off-angle ibheke kwi-Axis (11-20) 0 ± 0.1°
Ukuqhelaniswa neFlethi okuPhambili	I-A-Plane (11-20) ± 1.0 °
Ubude beFlethi obuPhambili	16.0 ± 1.0 mm	30.0 ± 1.0 mm	47.5 ± 2.0 mm
R-Inqwelomoya	9-o'clock
Umphezulu ongaphambili Gqiba	Yenza ipateni
Ngasemva Surface Gqiba	SSP:Umhlaba ocolekileyo,Ra=0.8-1.2um; I-DSP: I-Epi-ipolishwe, iRa<0.3nm
Laser uphawu	Icala elingasemva
TTV	≤8μm	≤10μm	≤20μm
THOBEKA	≤10μm	≤15μm	≤25μm
WARP	≤12μm	≤20μm	≤30μm
Ukungabandakanywa kuMda	≤2 mm
Inkcazo yePatheni	Ulwakhiwo lweMilo	Idome, iCone, iPiramidi
	Umzekelo Ubude	1.6~1.8μm
	Ipatheni Ububanzi	2.75 ~ 2.85μm
	Isithuba sepateni	0.1~0.3μm

I-XKH ikhethekileyo ekunikezeni umgangatho ophezulu, i-customized patterned sapphire substrates (PSS) kunye nenkxaso yobugcisa kunye nenkonzo yokuthengisa emva kokuthengisa ukunceda abathengi bafezekise ukutsha okusebenzayo kwintsimi ye-LED, ukubonisa kunye ne-optoelectronics.

1. Unikezelo lwePSS oluphezulu: I-Pattered sapphire substrates kwiindidi ezahlukeneyo zobukhulu (2 ", 4 ", 6 ") ukuhlangabezana neemfuno ze-LED, ukubonisa kunye nezixhobo ze-optoelectronic.

2. Uyilo olucwangcisiweyo: Yenza ngokwezifiso i-surface micro-nano isakhiwo (njenge-cone, iphiramidi okanye i-hexagonal array) ngokweemfuno zomthengi ukwandisa ukusebenza kakuhle kokukhutshwa kokukhanya.

3. Inkxaso yobugcisa: Ukubonelela ngoyilo lwesicelo se-PSS, ukulungiswa kwenkqubo kunye nokubonisana nobugcisa ukunceda abathengi baphucule ukusebenza kwemveliso.

4. Inkxaso yokukhula kwe-Epitaxial: I-PSS ehambelana ne-GaN epitaxial material ibonelelwa ukuqinisekisa ukukhula komgangatho ophezulu we-epitaxial layer.

5. Uvavanyo kunye nesiqinisekiso: Ukubonelela ngengxelo yokuhlolwa komgangatho we-PSS ukuqinisekisa ukuba iimveliso ziyahlangabezana nemigangatho yoshishino.