I-substrate yeSapphire enePatterned PSS 2inch 4inch 6inch ICP dry etching ingasetyenziselwa iitships ze-LED
Uphawu oluphambili
1. Iimpawu zezinto: Izinto ezisetyenziswa kwisiseko sendawo yi-sapphire enye yekristale (Al₂O₃), enobunzima obuphezulu, ukumelana nobushushu obuphezulu kunye nozinzo lweekhemikhali.
2. Ulwakhiwo lomphezulu: Umphezulu wenziwa yi-photolithography kunye nokukrola kwizakhiwo ze-micro-nano ezijikelezayo, ezifana neekhowuni, iiphiramidi okanye ii-arrays ezineehexagonal.
3. Ukusebenza kwe-Optical: Ngokusebenzisa uyilo lwe-surface patterning, ukukhanya okupheleleyo kwindawo yokujonga kuyancitshiswa, kwaye ukusebenza kakuhle kokukhupha ukukhanya kuyaphucuka.
4. Ukusebenza kobushushu: I-substrate yesafire inomoya ogqithisileyo wobushushu, ifanelekile kwizicelo ze-LED ezinamandla aphezulu.
5. Iinkcukacha zobungakanani: Ubungakanani obuqhelekileyo zii-intshi ezi-2 (50.8mm), ii-intshi ezi-4 (100mm) kunye nee-intshi ezi-6 (150mm).
Iindawo eziphambili zesicelo
1. Ukuveliswa kwe-LED:
Ukuphucula ukusebenza kakuhle kokukhupha ukukhanya: I-PSS inciphisa ukulahleka kokukhanya ngoyilo lweepateni, iphucula kakhulu ukukhanya kwe-LED kunye nokusebenza kakuhle kokukhanya.
Umgangatho ophuculweyo wokukhula kwe-epitaxial: Isakhiwo esinamaphethini sinika isiseko esingcono sokukhula kwe-GaN epitaxial layers kwaye siphucula ukusebenza kwe-LED.
2. I-Laser Diode (LD):
Iilaser ezinamandla aphezulu: Ukuqhuba okuphezulu kobushushu kunye nokuzinza kwePSS kufanelekile kwiidiode zelaser ezinamandla aphezulu, okuphucula ukusebenza kokusasazwa kobushushu kunye nokuthembeka.
Umsinga ophantsi: Lungisa ukukhula kwe-epitaxial, nciphisa umsinga ongaphantsi kwe-laser diode, kwaye uphucule ukusebenza kakuhle.
3. Isixhobo sokubona imifanekiso:
Uvakalelo oluphezulu: Ukudluliselwa kokukhanya okuphezulu kunye noxinano oluphantsi lwe-PSS kuphucula uvakalelo kunye nesantya sokuphendula kwesixhobo sokubona ifoto.
Impendulo ye-wide spectral: ifanelekile ukubonwa kwe-photoelectric kwi-ultraviolet ukuya kuluhlu olubonakalayo.
4. Izixhobo zombane:
Ukumelana nombane ophezulu: Ubushushu obuphezulu beSapphire kunye nokuzinza kobushushu zifanelekile kwizixhobo zamandla eziphezulu zombane.
Ukusasazwa kobushushu ngokufanelekileyo: Ukuhanjiswa kobushushu okuphezulu kuphucula ukusebenza kokusasazwa kobushushu kwezixhobo zamandla kwaye kwandisa ubomi benkonzo.
5. Izixhobo ze-Rf:
Ukusebenza rhoqo kwe-frequency: Ukulahleka okuphantsi kwe-dielectric kunye nokuzinza okuphezulu kobushushu be-PSS zifanelekile kwizixhobo ze-RF ezisebenza rhoqo.
Ingxolo ephantsi: Ukuthe tyaba okuphezulu kunye noxinano oluphantsi lweziphene kunciphisa ingxolo yesixhobo kwaye kuphucula umgangatho wesignali.
6. Iibhayosensa:
Ukuchonga uvakalelo oluphezulu: Ukuhanjiswa kokukhanya okuphezulu kunye nokuzinza kweekhemikhali zePSS zifanelekile kwii-biosensors ezinovakalelo oluphezulu.
Ukuhambelana kwezinto eziphilayo: Ukuhambelana kwezinto eziphilayo kwesafire kwenza ukuba ifaneleke kwizicelo zonyango kunye nokuchonga izinto eziphilayo.
I-substrate yesafire eneepateni (PSS) enezinto ze-GaN epitaxial:
I-substrate yesafire enepateni (PSS) yeyona substrate ifanelekileyo yokukhula kwe-epitaxial yeGaN (gallium nitride). I-lattice constant yesafire isondele kwiGaN, enokunciphisa ukungalingani kwe-lattice kunye neziphene ekukhuleni kwe-epitaxial. Ulwakhiwo lwe-micro-nano lomphezulu wePSS aluphuculi kuphela ukusebenza kakuhle kokukhupha ukukhanya, kodwa luphucula nomgangatho wekristale womaleko we-epitaxial weGaN, ngaloo ndlela luphucula ukusebenza kunye nokuthembeka kwe-LED.
Iiparameter zobugcisa
| Into | I-substrate yeSapphire enePattern (2 ~ 6inch) | ||
| Ububanzi | 50.8 ± 0.1 mm | 100.0 ± 0.2 mm | 150.0 ± 0.3 mm |
| Ubukhulu | 430 ± 25μm | 650 ± 25μm | 1000 ± 25μm |
| Ukujongwa komphezulu | I-C-plane (0001) i-off-engile ejonge kwi-M-axis (10-10) 0.2 ± 0.1° | ||
| I-C-plane (0001) i-off-engile ejonge kwi-A-axis (11-20) 0 ± 0.1° | |||
| Uqhelaniso oluPhambili oluSicaba | Inqwelo-moya (11-20) ± 1.0° | ||
| Ubude obuPhambili obuSicaba | 16.0 ± 1.0 mm | 30.0 ± 1.0 mm | 47.5 ± 2.0 mm |
| I-R-Plane | Intsimbi ye-9 | ||
| Umphezulu ongaphambili ugqityiwe | Ipetheni | ||
| Ukugqitywa komphezulu ongasemva | I-SSP: Ecoliweyo kakuhle, iRa=0.8-1.2um; iDSP: Epi-polished, iRa<0.3nm | ||
| Uphawu lweLaser | Icala elingasemva | ||
| I-TTV | ≤8μm | ≤10μm | ≤20μm |
| I-BOW | ≤10μm | ≤15μm | ≤25μm |
| I-WARP | ≤12μm | ≤20μm | ≤30μm |
| Ukukhutshwa komda | ≤2 mm | ||
| Inkcazelo yePateni | Ulwakhiwo lweMilo | IDome, iKhowuni, iPiramidi | |
| Ukuphakama kwePateni | 1.6~1.8μm | ||
| Ububanzi bePateni | 2.75~2.85μm | ||
| Indawo yePateni | 0.1~0.3μm | ||
I-XKH igxile ekuboneleleni nge-sapphire substrates (PSS) ezikumgangatho ophezulu, ezenziwe ngokwezifiso, ngenkxaso yobugcisa kunye nenkonzo yasemva kokuthengisa ukunceda abathengi ukuba bafezekise ubuchule obutsha kwicandelo le-LED, isibonisi kunye ne-optoelectronics.
1. Ubonelelo lwePSS olukumgangatho ophezulu: Ii-substrates zesafire ezenziwe ngeepateni ngobukhulu obahlukeneyo (2 ", 4", 6 ") ukuhlangabezana neemfuno ze-LED, izixhobo zokubonisa kunye ne-optoelectronic.
2. Uyilo olucwangcisiweyo: Yenza ngokwezifiso isakhiwo se-micro-nano yomphezulu (njengekhowuni, iphiramidi okanye uluhlu olune-hexagonal) ngokweemfuno zabathengi ukuze kuphuculwe ukusebenza kakuhle kokukhupha ukukhanya.
3. Inkxaso yobugcisa: Ukubonelela ngoyilo lwesicelo se-PSS, ukuphuculwa kwenkqubo kunye nokubonisana ngobuchwepheshe ukunceda abathengi baphucule ukusebenza kwemveliso.
4. Inkxaso yokukhula kwe-Epitaxial: I-PSS ehambelana nezinto ze-epitaxial ze-GaN ibonelelwa ukuqinisekisa ukukhula komgangatho ophezulu we-epitaxial layer.
5. Uvavanyo kunye nesiqinisekiso: Nika ingxelo yokuhlolwa komgangatho we-PSS ukuqinisekisa ukuba iimveliso ziyahlangabezana nemigangatho yoshishino.
Umzobo oneenkcukacha
