I-P-uhlobo lwe-SiC wafer 4H/6H-P 3C-N 6inch ukutyeba 350 μm kunye nokuqhelaniswa neFlethi ePrayimari

I-P-uhlobo lwe-SiC wafer 4H/6H-P 3C-N 6intshi ukutyeba 350 μm kunye nePrimary Flat Ukuqhelaniswa noMfanekiso oFaniweyo

Inkcazelo emfutshane:

I-P-uhlobo lwe-SiC wafer, i-4H / 6H-P 3C-N, i-6-intshi ye-semiconductor ye-intshi kunye nobukhulu be-350 μm kunye ne-primary flat orientation, eyenzelwe usetyenziso oluphezulu lwe-elektroniki. Iyaziwa ngokuba ne-thermal conductivity ephezulu, amandla ombane aphezulu, kunye nokuchasana nobushushu obugqithisileyo kunye neendawo ezinobungozi, esi siqwenga silungele izixhobo zombane ezisebenza kakhulu. I-P-type doping yazisa imingxuma njengeyona nto iphambili yokubiza, iyenza ilungele umbane we-elektroniki kunye nosetyenziso lweRF. Isakhiwo sayo esiqinileyo siqinisekisa ukusebenza okuzinzile phantsi kweemeko eziphezulu ze-voltage kunye ne-high-frequency, okwenza kube yinto efanelekileyo kwizixhobo zamandla, i-electronics high-temperature, kunye nokuguqulwa kwamandla aphezulu. Ukuqhelaniswa kweflethi ephambili iqinisekisa ulungelelwaniso oluchanekileyo kwinkqubo yokuvelisa, ukubonelela ngokuhambelana kwimveliso yesixhobo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Specification4H/6H-P Uhlobo lweSiC Composite Substrates Itheyibhile yeparamitha eqhelekileyo

6 intshi ubukhulu Silicon Carbide (SiC) Substrate Inkcazo

IBanga			Zero MPD ProductionIBanga (Z Ibanga)	Imveliso esemgangathweniIBanga (P Ibanga)	IBanga leDummy (D Ibanga)
Ububanzi			145.5 mm~150.0 mm
Ukutyeba			350 μm ± 25 μm
I-Wafer Orientation			-Offi-axis: 2.0 ° -4.0 ° ukuya [1120] ± 0.5 ° ye-4H/6H-P, Kwi-axis:〈111〉± 0.5° ye-3C-N
Ukuxinana kweMibhobho			0 cm-2
Ukuxhathisa	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Ukuqhelaniswa neFlethi okuPhambili		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ubude beFlethi obuPhambili			32.5 mm ± 2.0 mm
Ubude beFlethi yesibini			18.0 mm ± 2.0 mm
Ukuqhelaniswa neFlethi yesibini			Ubuso beSilicon phezulu: 90° CW. ukusuka Prime flat ± 5.0 °
Ukungabandakanywa kuMda			3 mm		6 mm
LTV/TTV/Saphetha/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			IsiPolish Ra≤1 nm
			I-CMP Ra≤0.2 nm		Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo ≤ 10 mm, ubude obunye≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo			Akukho nanye		Indawo eyongezelekayo≤3%
Ukubandakanywa kweCarbon ebonakalayo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips iPhezulu ngokuKhanya okuNgamandla			Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu		I-5 ivunyelwe, ≤1 mm nganye
Ungcoliseko lweSilicon Surface ngoBunzulu obuPhezulu			Akukho nanye
Ukupakishwa			Iikhasethi ezininzi zewafer okanye iSingle Wafer Container

Amanqaku:

※ Imida yeziphene isebenza kuwo wonke umphezulu we-wafer ngaphandle kwendawo esecaleni yomphetho. # Imikrwelo kufuneka ijongwe kuSi face o

I-P-uhlobo lwe-SiC wafer, i-4H / 6H-P 3C-N, kunye nobukhulu bayo obuyi-intshi ezi-6 kunye nobukhulu be-350 μm, idlala indima ebalulekileyo kwimveliso yombane we-electronics ephezulu yokusebenza. Ukuqhuba kakuhle kwe-thermal kunye ne-voltage ephezulu yokuqhekeka kuyenza ilungele izinto zokwenziwa kombane, ii-diode, kunye neetransistors ezisetyenziswa kwindawo ezinobushushu obuphezulu njengezithuthi zombane, iigridi zamandla, kunye neenkqubo zamandla avuselelekayo. Ukukwazi kwe-wafer ukusebenza ngokufanelekileyo kwiimeko ezinzima kuqinisekisa ukusebenza okuthembekileyo kwizicelo zamashishini ezifuna ukuxinana kwamandla aphezulu kunye nokusebenza kakuhle kwamandla. Ukongeza, isiseko sayo sokuqhelaniswa neflethi siluncedo kulungelelwaniso oluchanekileyo ngexesha lokwenziwa kwesixhobo, ukuphucula ukusebenza kakuhle kwemveliso kunye nokungaguquguquki kwemveliso.

Izibonelelo ze-N-uhlobo lwe-SiC composite substrates ziquka

High Thermal Conductivity: Ii-wafers ze-SiC zohlobo lwe-P zibuchitha ngokufanelekileyo ubushushu, zibenze zilungele izicelo zobushushu obuphezulu.
Ukuqhekeka okuphezulu kweVoltage: Iyakwazi ukumelana nombane ophezulu, ukuqinisekisa ukuthembeka kumbane wamandla kunye nezixhobo eziphezulu zombane.
Ukuchasana neeNdawo eziBungqwabalala: Ukuqina okugqwesileyo kwiimeko ezigqithisileyo, ezinje ngamaqondo obushushu aphezulu kunye neendawo ezigrulisayo.
Uguqulo lwamandla olusebenzayo: I-P-type doping iququzelela ukuphathwa kwamandla ngokufanelekileyo, okwenza i-wafer ilungele iinkqubo zokuguqula amandla.
Ukuqhelaniswa neFlethi okuPhambili: Ukuqinisekisa ulungelelwaniso oluchanekileyo ngexesha lokuvelisa, ukuphucula ukuchaneka kwesixhobo kunye nokuhambelana.
Ulwakhiwo olubhityileyo (350 μm): Ubukhulu be-wafer buxhasa ukudityaniswa kwezixhobo zombane eziphambili, ezicinezelekileyo.

Ngokubanzi, i-P-type SiC wafer, 4H / 6H-P 3C-N, inikeza uluhlu lweenzuzo ezenza ukuba zifaneleke kakhulu kwi-industrial and electronic applications. I-conductivity yayo ephezulu ye-thermal kunye ne-voltage ye-breakdown yenza umsebenzi othembekileyo kwindawo yokushisa ephezulu kunye ne-high-voltage, ngelixa ukuchasana kwayo kwiimeko ezinzima kuqinisekisa ukuhlala. I-P-type doping ivumela ukuguqulwa kwamandla okusebenzayo, okwenza kube yinto efanelekileyo kumandla ombane kunye neenkqubo zamandla. Ukongeza, i-wafer eyona nto iphambili yokuqhelaniswa neflethi iqinisekisa ulungelelwaniso oluchanekileyo ngexesha lenkqubo yokwenziwa kwemveliso, okomeleza imveliso engaguqukiyo. Ngobukhulu be-350 μm, ifaneleke kakuhle ukudibanisa kwizixhobo eziphambili, ezihlangeneyo.