I-LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ye5G/6G yoNxibelelwano

Inkcazelo emfutshane:

I-LiTaO3 Wafer (i-lithium tantalate wafer), imathiriyeli engundoqo kwisizukulwana sesithathu semiconductors kunye ne-optoelectronics, inyusa ubushushu bayo obuphezulu beCurie (610°C), uluhlu olubanzi lokungafihlisi (0.4–5.0 μm), i-piezoelectric coefficient ephezulu (d33 > 1,500 pC/N revolution) kunye nelahleko ephantsi δtoelectric (2%). Unxibelelwano lwe-5G, ukudityaniswa kweefoto, kunye nezixhobo ze-quantum. Ukusebenzisa iitekhnoloji zokuyila ezikumgangatho ophezulu ezifana nokuthuthwa komphunga womzimba (PVT) kunye nokubekwa komphunga wekhemikhali (CVD), i-XKH ibonelela nge-X/Y/Z-cut, i-42°Y-cut, kunye ne-periodically poled (PPLT) kwiifomathi ze-2–8-intshi, ezibonisa uburhabaxa bomphezulu (Ra) <0.1 ⁄⁻<0.5cm density kunye ne-micro ⁻⁄⁽ Iinkonzo zethu ziquka i-Fe doping, ukunciphisa iikhemikhali, kunye ne-Smart-Cut heterogeneous integration, ukujongana nezihluzi ezisebenza ngokuphezulu, i-infrared detectors, kunye nemithombo yokukhanya ye-quantum. Esi sixhobo siqhuba impumelelo kwi-miniaturization, ukusebenza kwe-high-frequency, kunye nokuzinza kwe-thermal, ukukhawulezisa ukutshintshwa kwekhaya kubuchwephesha obubalulekileyo.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparamitha zobugcisa

Igama	I-Optical-grade LiTaO3	Inqanaba letafile yesandi LiTaO3
Axial	Z cut + / - 0.2 °	36 ° Y ukusika / 42 ° Y ukusika / X usike (+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Inqwelomoya yeDatum	22mm +/ - 2mm	22mm + /-2mm 32mm + /-2mm
Ukutyeba	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
TTV	≤ 10um	≤ 10um
Ubushushu beCurie	605 °C + / - 0.7 °C (Indlela ye-DTA)	605 °C + / -3 °C (Indlela yeDTA
Umgangatho womphezulu	Ukupolishwa kwamacala amabini	Ukupolishwa kwamacala amabini
Imiphetho eChamfered	ukujikeleza komphetho	ukujikeleza komphetho

Iimpawu eziphambili

1.UMbane kunye nokuSebenza okubonakalayo
· I-Electro-Optic Coefficient: i-r33 ifikelela kwi-30 pm / V (X-cut), i-1.5 × ephezulu kune-LiNbO3, eyenza i-ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
· I-Broad Spectral Response: Uluhlu lokudluliselwa kwe-0.4–5.0 μm (ubukhulu be-8 mm), kunye nomphetho wokufunxa i-ultraviolet ephantsi njenge-280 nm, ilungele iilaser ze-UV kunye nezixhobo zamachaphaza e-quantum.
· I-Coefficient ye-Pyroelectric ephantsi: i-dP/dT = 3.5×10⁻⁴ C/(m²·K), iqinisekisa ukuzinza kwi-infrared sensors yobushushu obuphezulu.

2. IiPropati zoThermal kunye nezoomatshini
· I-High Thermal Conductivity: 4.6 W / m · K (X-cut), i-quadruple leyo ye-quartz, igcina -200-500 ° C ibhayisikili ye-thermal.
· I-Coefficient yoKwandiswa kwe-Thermal ephantsi: i-CTE = 4.1 × 10⁻⁶/K (25-1000 ° C), ihambelana nokupakishwa kwe-silicon ukunciphisa uxinzelelo lwe-thermal.
3. Ukulawulwa kweSiphene kunye nokuLungisa ukuCwangciswa
Uxinaniso lweMibhobho yeMicropipe: <0.1 cm⁻² (ii-intshi ezisi-8-intshi), ingxinano yokususa indawo engaphantsi kwe-500 cm⁻² (ingqinwe nge-KOH etching).
· Umgangatho woMphezulu: I-CMP-imenyezeliswe ukuya kwi-Ra <0.5 nm, ihlangabezana neemfuno ze-EUV lithography-grade flatness.

Usetyenziso oluphambili

I-Domain	Iimeko zosetyenziso	Izinto eziluncedo kwezobuGcisa
Unxibelelwano lwe-Optical	I-100G / 400G i-DWDM lasers, i-silicon photonics hybrid modules	I-LiTaO3 wafer's wafer's wide spectral transmission kunye nelahleko ye-waveguide ephantsi (α <0.1 dB/cm) yenza ukuba i-C-band ikhule.
5G/6G uNxibelelwano	Izihluzi ze-SAW (1.8-3.5 GHz), izihlungi ze-BAW-SMR	I-42°Y-cut wafers ifezekisa i-Kt²>15%, ihambisa ilahleko ephantsi yokufaka (<1.5 dB) kunye nokuqengqeleka okuphezulu (>30 dB).
IiTekhnoloji zeQuantum	Ii-detectors ze-photon enye, imithombo ye-parametric phantsi-conversion	I-coefficient ephezulu engahambelaniyo (χ(2)=40 pm/V) kunye nezinga lokubala eliphantsi elimnyama (<100 count/s) iphucula ukuthembeka kwe-quantum.
Ukuziva kweMveliso	Izinzwa zoxinzelelo lobushushu obuphezulu, abaguquli bangoku	Impendulo ye-piezoelectric ye-wafer ye-LiTaO3 (g33>20 mV/m) kunye nokunyamezela ubushushu obuphezulu (>400°C) ifanele imo engqongileyo egqithisileyo.

Iinkonzo ze-XKH

1.Ukwenziwa kweWafer yesiNtu

· Ubungakanani kunye nokusika: ii-wafers ze-2-8-intshi ezine-X / Y / Z-cut, i-42 ° Y-cut, kunye ne-angular cuts yesiko (± 0.01 ° ukunyamezela).

· Ulawulo lwe-Doping: I-Fe, i-Mg doping ngendlela ye-Czochralski (uluhlu lokuxilonga 10¹⁶–10¹⁹ cm⁻³) ukunyusa i-electro-optic coefficients kunye nokuzinza kwe-thermal.

2.Ubuchwephesha beNkqubo ePhambili
.
· I-Periodic Poling (PPLT): Iteknoloji ye-Smart-Cut yee-wafers ze-LTOI, ukufezekisa i-± 10 nm yexesha elichanekileyo kunye nokuguqulwa kwe-quasi-phase-matched (QPM) frequency.

· Ukudityaniswa kwe-Heterogeneous: Ii-wafers ezihlanganisiweyo ze-Si-based LiTaO3 (POI) ezinolawulo lobunzima (300-600 nm) kunye ne-thermal conductivity ukuya kwi-8.78 W / m·K kwizihlungi ze-SAW eziphezulu.

3.IiNkqubo zoLawulo loMgangatho
.
· Uvavanyo lokuphela kokuphela: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), i-AFM (i-surface morphology), kunye novavanyo lwe-optical uniformity (Δn <5×10⁻⁵).

4.Global Supply Chain Support
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· Umthamo weMveliso: Imveliso yenyanga> ii-wafers ze-5,000 (i-8-intshi: i-70%), kunye neeyure ze-48 zokuhanjiswa ngokukhawuleza.

· Uthungelwano loLungiselelo: Ukuhanjiswa kweYurophu, kuMntla Melika, kunye ne-Asia-Pacific ngothutho lomoya/lolwandle ngokupakishwa okulawulwa ngamaqondo obushushu.