I-Electrode Sapphire Substrate kunye ne-Wafer C-plane LED Substrates

Inkcazo emfutshane:

Ngokusekelwe kuphuculo oluqhubekayo lwetekhnoloji yesafire kunye nokwanda ngokukhawuleza kwemarike yesicelo, ii-wafers ze-substrate ze-4 intshi kunye ne-6 intshi ziya kwamkelwa ngakumbi ziinkampani eziphambili ze-chip ngenxa yeenzuzo zazo zokusetyenziswa kwemveliso.


Iimbonakalo

Inkcazo

JIKELELE

Ifomula yeKhemikhali

I-Al2O3

Isakhiwo sekristale

Inkqubo ye-Hexagonal (hk o 1)

Ubukhulu beSeli yeYunithi

a=4.758 Å,Å c=12.991 Å, c:a=2.730

NGOKWEMZIMBA

 

I-Metric

IsiNgesi (soBukhosi)

Uxinano

3.98 g/cc

0.144 lb/in3

Ukuqina

1525 - 2000 Knoop, 9 mhos

3700° F

Indawo yokunyibilika

2310 K (2040° C)

 

ULWAKHIWO

Tensile strength

Ukusuka kwi-275 MPa ukuya kwi-400 MPa

40,000 ukuya kwi-58,000 psi

Amandla okuThamba kwi-20°C

 

58,000 psi (uyilo oluncinci)

Amandla okuThamba kwi-500° C

 

40,000 psi (uyilo oluncinci)

Amandla okuThamba kwi-1000° C

355 MPa

52,000 psi (uyilo oluncinci)

I-Flexural Stength

Ukusuka kwi-480 MPa ukuya kwi-895 MPa

70,000 ukuya kwi-130,000 psi

Amandla oxinzelelo

2.0 GPa (eyona iphezulu)

300,000 psi (eyona nto iphambili)

I-Sapphire njengesiseko sesekethe se-semiconductor

Iiwafers ezincinci zesafire zaziyindlela yokuqala ephumeleleyo yokusebenzisa i-insulating substrate apho i-silicon yayifakwa khona ukwenza iisekethe ezidibeneyo ezibizwa ngokuba yi-silicon on safire (SOS). Ukongeza kwiimpawu zayo ezintle zokufakelwa kombane, i-safire ine-thermal conductivity ephezulu. Iitships ze-CMOS kwisafire zifanelekile ngokukodwa kwizicelo zerediyo enamandla aphezulu (RF) ezifana neefowuni eziphathwayo, iirediyo zokhuseleko loluntu kunye neenkqubo zonxibelelwano lwesathelayithi.

Iiwafer zesafire eziziikristale enye zikwasetyenziswa njengezinto ezisetyenziswa kwishishini le-semiconductor lokukhulisa izixhobo ezisekelwe kwi-gallium nitride (GaN). Ukusetyenziswa kwesafire kunciphisa kakhulu iindleko njengoko ixabiso le-germanium limalunga ne-1/7th. I-GaN kwisafire isetyenziswa kakhulu kwii-diodes ezikhupha ukukhanya okuluhlaza okwesibhakabhaka (ii-LED).

Sebenzisa njengezinto zefestile

I-sapphire eyenziweyo (ngamanye amaxesha ibizwa ngokuba yiglasi ye-sapphire) idla ngokusetyenziswa njengezinto zefestile kuba ikhanya kakhulu phakathi kwe-150 nm (ultraviolet) kunye ne-5500 nm (infrared) wavelengths yokukhanya (i-spectrum ebonakalayo isusela malunga ne-380 nm ukuya kwi-750 nm) kwaye inokumelana okukhulu kakhulu nokukrwela. Iingenelo eziphambili zeefestile ze-sapphire

Bandakanya

I-bandwidth yokudlulisa i-optical ebanzi kakhulu, ukusuka kwi-UV ukuya ekukhanyeni okukufutshane ne-infrared

Inamandla kunezinye izinto ezibonakalayo okanye iifestile zeglasi

Iyamelana kakhulu nokukrweleka nokurhawuzelelwa (ubulukhuni beeminerali obuyi-9 kwisikali seMohs, ilandela idayimani kunye ne-moissanite phakathi kwezinto zendalo)

Iqondo lokunyibilika eliphezulu kakhulu (2030°C)

Umzobo oneenkcukacha

I-Electrode Sapphire Substrate kunye neWafer (1)
I-Electrode Sapphire Substrate kunye neWafer (2)

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