I-Electrode Sapphire Substrate kunye ne-Wafer C-plane ye-LED Substrates

Inkcazelo emfutshane:

Ngokusekwe kuphuculo oluqhubekayo lwetekhnoloji yesafire kunye nokwanda ngokukhawuleza kwemarike yosetyenziso, ii-intshi ezi-4 kunye ne-intshi ezi-6 ze-substrate wafers ziya kwamkelwa ngakumbi ziinkampani zetshiphu eziqhelekileyo ngenxa yeenzuzo zazo zendalo ekusebenziseni imveliso.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

NGOKUBANZI

Ifomula yeMichiza

Al2O3

Ubume beCrystal

Inkqubo eneHexagonal (hk o 1)

Ubungakanani beSeli yeyunithi

a=4.758 Å,Å c=12.991 Å, c:a=2.730

EMZIMBENI

 

Metric

IsiNgesi (Imperial)

Ukuxinana

3.98 g/cc

0.144 lb/in3

Ukuqina

1525 - 2000 Knoop, 9 mhos

3700°F

Indawo yokunyibilika

2310 K (2040° C)

 

UKWAKHIWA

Tensile strength

275 MPa ukuya 400 MPa

40,000 ukuba 58,000 psi

Amandla okuqina kwi-20°C

 

58,000 psi (uyilo min.)

Amandla okuqina kwi-500° C

 

40,000 psi (uyilo min.)

Amandla okuqina kwi-1000° C

355 MPa

52,000 psi (design min.)

Ukuqina kweFlexural

480 MPa ukuya kwi-895 MPa

70,000 ukuba 130,000 psi

Amandla oxinzelelo

2.0 GPA (eyokugqibela)

300,000 psi (ekugqibeleni)

ISapphire njenge-semiconductor circuit substrate

Iziphaluka zesafire ezibhityileyo yayilusetyenziso lokuqala oluyimpumelelo lwe-substrate ekhuselayo apho isilicon yafakwa khona ukwenza iisekethe ezidityanisiweyo ezibizwa ngokuba yisilicon kwisafire (SOS). Ukongeza kwizinto ezigqwesileyo zokugquma umbane, isafire ine-conductivity ephezulu ye-thermal conductivity.Iitshiphusi ze-CMOS kwisafire zifaneleke ngokukodwa usetyenziso lwerediyo olunamandla aphezulu (RF) njengeefowuni eziphathwayo, iirediyo zokhuseleko loluntu kunye neenkqubo zonxibelelwano ngesathelayithi.

Iziphaluka zesafire zekristale enye zikwasetyenziswa njengeesubstrates kushishino lwesemiconductor ukukhulisa izixhobo ezisekwe kwigallium nitride (GaN). Ukusetyenziswa kwesafire kunciphisa kakhulu iindleko njengoko malunga ne-1/7 yeendleko zegermanium.I-GaN kwi-sapphire isetyenziswa ngokuqhelekileyo kwi-blue light emitting diodes (LEDs).

Sebenzisa njengemathiriyeli yefestile

Isafire yokwenziwa (ngamanye amaxesha ibizwa ngokuba yiglasi yesafire) isoloko isetyenziswa njengesixhobo sefestile kuba icace kakhulu phakathi kwe-150 nm (i-ultraviolet) kunye ne-5500 nm (infrared) ubude bamaza okukhanya (i-spectrum ebonakalayo isuka malunga ne-380 nm ukuya kwi-750 nm) kwaye unokumelana okuphezulu kakhulu nokukrwempa. Iinzuzo eziphambili zeefestile zesafire

Bandakanya

I-bandwidth ye-optical transmission ebanzi kakhulu, ukusuka kwi-UV ukuya kwisibane esikufutshane ne-infrared

Yomelele kunezinye izinto ezibonakalayo okanye iifestile zeglasi

Ixhathisa kakhulu ekukrweleni kunye ne-abrasion (ubunzima beeminerali be-9 kwisikali se-Mohs, okwesibini kuphela kwidayimane kunye ne-moissanite phakathi kwezinto zendalo)

Indawo yokunyibilika ephezulu kakhulu (2030°C)

Idayagram eneenkcukacha

I-Electrode Sapphire Substrate kunye neWafer (1)
I-Electrode Sapphire Substrate kunye neWafer (2)

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