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I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP

I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP Featured Image
  • I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP
  • I-Dia300x1.0mmt Ukutyeba kweSapphire Wafer C-Plane SSP/DSP

Inkcazelo emfutshane:

I-Shanghai Xinkehui New Material Co., Ltd. inokuvelisa ama-wafers esafire aneendlela ezahlukeneyo zokuqhelaniswa nomphezulu (c, r, a, kunye ne-m-plane), kunye nokulawula i-engile yokunqunyulwa kwe-engile ukuya kwi-0.1 degree. Ngokusebenzisa itekhnoloji yethu yobunini, siyakwazi ukufikelela umgangatho ophezulu ofunekayo kwizicelo ezifana nokukhula kwe-epitaxial kunye ne-wafer bonding.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukwazisa ngebhokisi ye-wafer

Izinto zeCrystal I-99,999% ye-Al2O3, i-High Purity, i-Monocrystalline, i-Al2O3
Umgangatho weCrystal Ukubandakanywa, amanqaku ebhloko, amawele, Umbala, amaqamza amancinci kunye namaziko okusasazeka azikho
Ububanzi 2 intshi 3intshi 4intshi 6intshi ～ 12intshi
50.8± 0.1mm 76.2±0.2mm 100±0.3mm Ngokuhambelana nezibonelelo zemveliso esemgangathweni
Ukutyeba 430±15µm 550±15µm 650±20µm Inokwenziwa ngokwezifiso ngumthengi
Ukuqhelaniswa I-C-plane (0001) ukuya kwi-M-plane (1-100) okanye i-A-plane (1 1-2 0) 0.2±0.1 ° /0.3±0.1 °, i-R-plane (1-1 0 2), i-A-plane (1 1-2 0 ), M-inqwelomoya (1-1 0 0), Naluphi na Ukuqhelaniswa , Nayiphi na iengile
Ubude beflethi bokuqala 16.0±1mm 22.0±1.0mm 32.5±1.5 mm Ngokuhambelana nezibonelelo zemveliso esemgangathweni
Ukuqhelaniswa neflethi ephambili I-A-plane (1 1-2 0 ) ± 0.2 °      
TTV ≤10µm ≤15µm ≤20µm ≤30µm
LTV ≤10µm ≤15µm ≤20µm ≤30µm
TIR ≤10µm ≤15µm ≤20µm ≤30µm
THOBEKA ≤10µm ≤15µm ≤20µm ≤30µm
I-Wap ≤10µm ≤15µm ≤20µm ≤30µm
Umphezulu ongaphambili I-Epi-Polished (Ra< 0.2nm)

*Isaphetha: Ukutenxa kwindawo esembindini yomphezulu we-wafer ekhululekileyo, engabanjwanga ukusuka kwinqwelo-moya yereferensi, apho inqwelo-moya yereferensi ichazwa ziikona ezintathu zonxantathu olinganayo.

*I-Warp: Umahluko phakathi kowona mkhulu kunye nomgama omncinci womphezulu ophakathi we-wafer ekhululekileyo, engabanjwanga kwinqwelo-moya echazwe ngasentla.

Iimveliso ezikumgangatho ophezulu kunye neenkonzo zezixhobo ze-semiconductor zesizukulwana esilandelayo kunye nokukhula kwe-epitaxial:

Iqondo eliphezulu lokuthamba (i-TTV elawulwayo, isaphetha, i-warp njl.njl.)

Ukucocwa komgangatho ophezulu (ungcoliseko lwamasuntswana aphantsi, ukungcoliseka kwentsimbi ephantsi)

I-substrate yokugrumba, i-grooving, ukusika, kunye nokupolisha ngasemva

Ukuqhotyoshelwa kwedatha efana nokucoceka kunye nokumila kwe-substrate (ukhetho)

Ukuba unesidingo sesafire substrates, nceda uzive ukhululekile ukuqhagamshelana:

imeyile:eric@xkh-semitech.com+86 158 0194 2596 /doris@xkh-semitech.com+86 187 0175 6522

Siza kubuyela kuwe ngokukhawuleza!

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