I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm ibakala lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo.

I-8 intshi ye-SiC ye-silicon carbide wafer 4H-N uhlobo lwe-0.5mm yebanga lokuvelisa ibakala lophando lwebakala elikhazimlisiweyo lesubstrate ephawulweyo

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC), eyaziwa ngokuba yi-silicon carbide, i-semiconductor equkethe i-silicon kunye ne-carbon ene-chemical formula SiC. I-SiC isetyenziselwa izixhobo zombane ze-semiconductor ezisebenza kumaqondo okushisa aphezulu okanye uxinzelelo oluphezulu, okanye zombini. I-SiC ikwalelinye lamacandelo abalulekileyo e-LED, sisixhobo esiqhelekileyo sokukhulisa izixhobo ze-GaN, kwaye isenokusetyenziswa njengendawo yokutshisa ubushushu kwii-LED ezinamandla amakhulu.
I-8-intshi ye-silicon carbide substrate yinxalenye ebalulekileyo yesizukulwana sesithathu sezixhobo ze-semiconductor, eneempawu zamandla aphezulu okutshatyalaliswa kwentsimi, i-conductivity ephezulu ye-thermal, isantya esiphezulu se-electron saturation drift, njl., kwaye ifanelekile ukwenza ubushushu obuphezulu, izixhobo zombane eziphezulu, kunye namandla aphezulu. Iinkalo zayo zesicelo eziphambili ziquka izithuthi zombane, ukuhamba ngomzila, ukuhanjiswa kwamandla aphezulu kunye nokuguqulwa, i-photovoltaics, unxibelelwano lwe-5G, ukugcinwa kwamandla, i-aerospace, kunye ne-AI core computing data centers.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-8-intshi ye-silicon carbide substrate 4H-N uhlobo lubandakanya:

1. Ubuninzi beMicrotubule: ≤ 0.1/cm² okanye ngaphantsi, njengoxinaniso lwe-microtubule luncitshiswe kakhulu ukuya ngaphantsi kwe-0.05/cm² kwezinye iimveliso.
2. I-Crystal form ratio: I-4H-SiC ifom ye-crystal form ratio ifikelela kwi-100%.
3. Ukuxhathisa: 0.014~0.028 Ω·cm, okanye uzinze ngakumbi phakathi kwe-0.015-0.025 Ω·cm.
4. Uburhabaxa bomphezulu: CMP Si Face Ra≤0.12nm.
5. Ukutyeba: Ngokuqhelekileyo 500.0±25μm okanye 350.0±25μm.
6. I-angle ye-Chamfering: 25±5 ° okanye 30±5 ° ye-A1 / A2 ngokuxhomekeke kubukhulu.
7. Uxinaniso olupheleleyo lwe-dislocation: ≤3000/cm².
8. Ungcoliseko lwentsimbi engaphezulu: ≤1E+11 iiathom/cm².
9. Ukugoba kunye ne-warpage: ≤ 20μm kunye ne-≤2μm, ngokulandelanayo.
Ezi mpawu zenza i-8-intshi ye-silicon carbide substrates inexabiso elibalulekileyo lesicelo ekwenzeni ubushushu obuphezulu, i-high-frequency, kunye nezixhobo zombane eziphezulu.

I-8inch ye-silicon carbide wafer inezicelo ezininzi.

1. Izixhobo zamandla: Ii-wafers ze-SiC zisetyenziswa ngokubanzi ekwenzeni izixhobo zombane zamandla ezifana ne-MOSFETs yamandla (i-metal-oxide-semiconductor field-effect transistors), i-Schottky diodes, kunye neemodyuli zokudibanisa amandla. Ngenxa ye-conductivity ephezulu ye-thermal, i-voltage ephezulu yokuphuka, kunye nokuhamba kwe-electron ephezulu ye-SiC, ezi zixhobo zinokufikelela ngokufanelekileyo, ukuguqulwa kwamandla aphezulu kwiqondo lokushisa eliphezulu, i-voltage ephezulu kunye ne-high-frequency environments.

2. Izixhobo ze-Optoelectronic: Ii-wafers ze-SiC zidlala indima ebalulekileyo kwizixhobo ze-optoelectronic, ezisetyenziselwa ukuvelisa i-photodetectors, i-laser diode, imithombo ye-ultraviolet, njl. iifrikhwensi eziphezulu, kunye namanqanaba aphezulu ombane.

3. Izixhobo zeRadio Frequency (RF): Iitshiphusi zeSiC zikwasetyenziselwa ukuvelisa izixhobo zeRF ezifana nezikhulisi zamandla eRF, iiswitshi ze-high-frequency, ii-sensors zeRF, nokunye. Uzinzo oluphezulu lwe-Thermal ye-SiC, iimpawu ze-frequency ephezulu, kunye nelahleko ephantsi iyenza ilungele usetyenziso lweRF olufana nonxibelelwano olungenazingcingo kunye neenkqubo zerada.

I-4.Ubushushu obuphezulu be-elektroniki: Ngenxa yokuzinza kwabo okuphezulu kwe-thermal kunye ne-elasticity yeqondo lokushisa, ii-wafers ze-SiC zisetyenziselwa ukuvelisa iimveliso zombane ezenzelwe ukusebenza kwiindawo ezinobushushu obuphezulu, kubandakanywa i-electronics yamandla aphezulu, izinzwa kunye nabalawuli.

Iindlela zokusetyenziswa eziphambili ze-8-intshi ye-silicon carbide substrate 4H-N uhlobo lubandakanya ukuveliswa kobushushu obuphezulu, i-high-frequency, kunye nezixhobo zombane ezinamandla kakhulu, ngakumbi kwiinkalo ze-automotive electronics, amandla elanga, ukuveliswa kwamandla omoya, umbane. oololiwe, iiseva, izixhobo zasekhaya, kunye nezithuthi zombane. Ukongeza, izixhobo ezinjenge-SiC MOSFETs kunye ne-Schottky diode zibonise ukusebenza kakuhle ekutshintsheni ama-frequencies, ii-experimenti ze-short-circuit, kunye nokusetyenziswa kwe-inverter, ukuqhuba ukusetyenziswa kwazo kumbane wombane.

I-XKH inokwenziwa ngokwezifiso ezinobunzima obahlukeneyo ngokweemfuno zabathengi. Uburhabaxa bomphezulu obahlukeneyo kunye nonyango lokugudisa luyafumaneka. Iindidi ezahlukeneyo zedoping (ezifana ne-nitrogen doping) ziyaxhaswa. I-XKH inokubonelela ngenkxaso yobugcisa kunye neenkonzo zokubonisana ukuqinisekisa ukuba abathengi banokucombulula iingxaki kwinkqubo yokusetyenziswa. I-8-intshi ye-silicon carbide substrate ineenzuzo ezibalulekileyo malunga nokunciphisa iindleko kunye nokwanda kwamandla, okunokunciphisa ixabiso leyunithi yeyunithi malunga ne-50% xa kuthelekiswa ne-6-intshi substrate. Ukongeza, ukutyeba okwandisiweyo kwe-substrate ye-intshi ezi-8 kunceda ukunciphisa ukuphambuka kwejometri kunye ne-edge warping ngexesha lomatshini, ngaloo ndlela kuphuculwe isivuno.