I-wafer ye-SiC ye-silicon carbide ye-intshi ezi-8 4H-N uhlobo lwe-0.5mm grade grade yophando lwe-substrate eyenziwe ngokwezifiso

I-wafer ye-SiC silicon carbide ye-intshi ezi-8 Uhlobo lwe-4H-N 0.5mm grade grade yophando lwemveliso grade substrate epholisiweyo eyenziwe ngokwezifiso Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-silicon carbide (i-SiC), eyaziwa ngokuba yi-silicon carbide, yi-semiconductor equlethe i-silicon kunye ne-carbon enefomyula yekhemikhali i-SiC. I-SiC isetyenziswa kwizixhobo ze-elektroniki ze-semiconductor ezisebenza kumaqondo obushushu aphezulu okanye uxinzelelo oluphezulu, okanye zombini. I-SiC ikwayenye yezona zinto zibalulekileyo ze-LED, sisixhobo esiqhelekileyo sokukhulisa izixhobo ze-GaN, kwaye ingasetyenziswa njengesinki sobushushu kwii-LED ezinamandla aphezulu.
I-substrate ye-silicon carbide ye-intshi ezi-8 yinxalenye ebalulekileyo yesizukulwana sesithathu sezixhobo ze-semiconductor, ezineempawu zokuqina kwentsimi ephezulu, ukuqhuba okuphezulu kobushushu, izinga eliphezulu lokutyibilika kwe-electron saturation, njl.njl., kwaye ifanelekile ukwenza izixhobo ze-elektroniki ezinobushushu obuphezulu, ii-voltage eziphezulu, kunye nezixhobo ze-elektroniki ezinamandla aphezulu. Iindawo zayo eziphambili zokusetyenziswa ziquka izithuthi zombane, uthutho lukaloliwe, uthumelo lwamandla aphezulu kunye notshintsho, i-photovoltaics, unxibelelwano lwe-5G, ugcino lwamandla, i-aerospace, kunye namaziko edatha yamandla e-AI core computing.

Thumela i-imeyile kuthi

Iimbonakalo

Iimpawu eziphambili ze-8-intshi ze-silicon carbide substrate yohlobo lwe-4H-N ziquka:

1. Uxinano lwe-microtubule: ≤ 0.1/cm² okanye ngaphantsi, njengoxinano lwe-microtubule oluncitshiswa kakhulu lube ngaphantsi kwe-0.05/cm² kwezinye iimveliso.
2. Umlinganiselo wefom yekristale: Umlinganiselo wefom yekristale ye-4H-SiC ufikelela kwi-100%.
3. Ukumelana: 0.014~0.028 Ω·cm, okanye uzinze ngakumbi phakathi kwe-0.015-0.025 Ω·cm.
4. Uburhabaxa bomphezulu: CMP Si Face Ra≤0.12nm.
5. Ubukhulu: Ngokwesiqhelo yi-500.0±25μm okanye i-350.0±25μm.
6. I-engile yokujikajika: 25±5° okanye 30±5° kwi-A1/A2 kuxhomekeke kubukhulu.
7. Uxinano olupheleleyo lokuphuma kwesisu: ≤3000/cm².
8. Ungcoliseko lwesinyithi esingaphezulu: ≤1E+11 iiathom/cm².
9. Ukugoba kunye nokujika: ≤ 20μm kunye ≤2μm, ngokulandelelana.
Ezi mpawu zenza ukuba ii-substrates ze-silicon carbide ezingama-intshi ezi-8 zibe nexabiso elibalulekileyo ekusetyenzisweni kwezixhobo ze-elektroniki ezisebenzisa ubushushu obuphezulu, ii-frequency eziphezulu, kunye namandla aphezulu.

I-wafer ye-silicon carbide ye-8inch inezicelo ezininzi.

1. Izixhobo zamandla: Ii-wafer ze-SiC zisetyenziswa kakhulu ekwenzeni izixhobo zamandla ze-elektroniki ezifana nee-MOSFET zamandla (ii-transistors ze-metal-oxide-semiconductor field-effect), ii-diode ze-Schottky, kunye neemodyuli zokudibanisa amandla. Ngenxa yokuqhuba okuphezulu kobushushu, i-voltage ephezulu yokuqhekeka, kunye nokuhamba okuphezulu kwee-electron ze-SiC, ezi zixhobo zinokufikelela ekuguqulweni kwamandla okusebenzayo nokusebenza okuphezulu kwiindawo ezinobushushu obuphezulu, ii-voltage eziphezulu, kunye nee-frequency eziphezulu.

2. Izixhobo ze-Optoelectronic: Ii-SiC wafers zidlala indima ebalulekileyo kwizixhobo ze-optoelectronic, ezisetyenziselwa ukwenza ii-photodetectors, ii-laser diodes, imithombo ye-ultraviolet, njl. Iipropati ze-silicon carbide ezibonakalayo kunye neze-elektroniki ziyenza ibe yeyona nto ikhethwayo, ngakumbi kwizicelo ezifuna amaqondo obushushu aphezulu, amaza aphezulu, kunye namanqanaba aphezulu amandla.

3. Izixhobo zeRadio Frequency (RF): Iitships zeSiC zikwasetyenziselwa ukwenza izixhobo zeRF ezifana nee-RF power amplifiers, ii-high-frequency switches, ii-RF sensors, kunye nokunye. Uzinzo oluphezulu lobushushu beSiC, iimpawu ze-high-frequency, kunye nokulahlekelwa okuphantsi kwenza ukuba ilungele usetyenziso lweRF olufana nonxibelelwano olungenazingcingo kunye neenkqubo ze-radar.

4. Ii-elektroniki ezisebenzisa ubushushu obuphezulu: Ngenxa yokuzinza kwazo okuphezulu kobushushu kunye nokuguquguquka kobushushu, ii-wafer ze-SiC zisetyenziselwa ukuvelisa iimveliso ze-elektroniki ezenzelwe ukusebenza kwiindawo ezinobushushu obuphezulu, kubandakanya ii-elektroniki zamandla obushushu obuphezulu, ii-sensors, kunye nabalawuli.

Iindlela eziphambili zokusetyenziswa kwe-substrate ye-silicon carbide ye-8-intshi yohlobo lwe-4H-N ziquka ukuveliswa kwezixhobo ze-elektroniki ezisebenzisa ubushushu obuphezulu, ezisebenzisa ubuninzi, nezisebenzisa amandla aphezulu, ngakumbi kwicandelo le-elektroniki yeemoto, amandla elanga, ukuveliswa kwamandla omoya, iilocomotive zombane, iiseva, izixhobo zasekhaya, kunye nezithuthi zombane. Ukongeza, izixhobo ezifana neeSiC MOSFET kunye neeSchottky diodes zibonakalise ukusebenza okugqwesileyo kwii-switching frequency, iimvavanyo ze-short-circuit, kunye nezicelo ze-inverter, nto leyo eqhuba ukusetyenziswa kwazo kwi-electronics zamandla.

I-XKH ingenziwa ngokwezifiso ngobukhulu obahlukeneyo ngokweemfuno zabathengi. Kukho iindlela ezahlukeneyo zokurhabaxa kunye nonyango lokupolisha. Iintlobo ezahlukeneyo zokupolisha (ezifana nokupolisha nge-nitrogen) ziyaxhaswa. I-XKH inokubonelela ngenkxaso yobugcisa kunye neenkonzo zokubonisana ukuqinisekisa ukuba abathengi banokusombulula iingxaki kwinkqubo yokusebenzisa. I-substrate ye-silicon carbide ye-intshi ezi-8 ineenzuzo ezibalulekileyo ngokubhekiselele ekunciphiseni iindleko kunye nokwanda kwamandla, okunokunciphisa ixabiso le-unit chip malunga ne-50% xa kuthelekiswa ne-substrate ye-intshi ezi-6. Ukongeza, ubukhulu obandayo be-substrate ye-intshi ezi-8 bunceda ukunciphisa ukuphambuka kwejometri kunye nokugoba komphetho ngexesha lokwenziwa, ngaloo ndlela kuphucula isivuno.