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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu Umfanekiso obonisiweyo
  • I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu
  • I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu

Inkcazo emfutshane:

Iiwafer ze-silicon carbide zisetyenziswa kwizixhobo ze-elektroniki ezifana nee-power diodes, ii-MOSFET, izixhobo ze-microwave ezinamandla aphezulu, kunye nee-RF transistors, nto leyo evumela ukuguqulwa kwamandla okusebenzayo kunye nolawulo lwamandla. Iiwafer ze-SiC kunye nee-substrates zikwasetyenziswa kwi-elektroniki yeemoto, kwiinkqubo zeenqwelo moya, kunye nobuchwepheshe bamandla avuselelekayo.


Iimbonakalo

Uzikhetha njani iiSilicon Carbide Wafers kunye neeSiC Substrates?

Xa ukhetha ii-wafers ze-silicon carbide (SiC) kunye ne-substrates, kukho izinto ezininzi ekufuneka ziqwalaselwe. Nazi ezinye zeendlela ezibalulekileyo:

Uhlobo lwezinto: Chonga uhlobo lwezinto zeSiC ezifanele isicelo sakho, ezifana ne-4H-SiC okanye i-6H-SiC. Ulwakhiwo lwekristale olusetyenziswa kakhulu yi-4H-SiC.

Uhlobo lokuDopa: Gqiba ukuba ufuna i-substrate ye-SiC edopayiweyo okanye engadopayiweyo. Iindidi eziqhelekileyo zokudopayiweyo yi-N-type (n-doped) okanye i-P-type (p-doped), kuxhomekeke kwiimfuno zakho ezithile.

Umgangatho wekristale: Vavanya umgangatho wekristale wee-wafers zeSiC okanye ii-substrates. Umgangatho ofunekayo umiselwa ziiparameter ezifana nenani leziphene, ulungelelwaniso lwekristale, kunye noburhabaxa bomphezulu.

Ububanzi beWafer: Khetha ubungakanani bewafer obufanelekileyo ngokusekelwe kwisicelo sakho. Ubukhulu obuqhelekileyo buquka ii-intshi ezi-2, ii-intshi ezi-3, ii-intshi ezi-4, kunye nee-intshi ezi-6. Okukhona ububanzi bukhulu, kokukhona ufumana isivuno esingakumbi ngewafer nganye.

Ubukhulu: Cinga ngobukhulu obufunekayo bee-wafers ze-SiC okanye ii-substrates. Iinketho zobukhulu eziqhelekileyo ziqala kwii-micrometer ezimbalwa ukuya kwii-micrometer ezingamakhulu aliqela.

Ulwalathiso: Chonga ulwalathiso lwekristale oluhambelana neemfuno zesicelo sakho. Ulwalathiso oluqhelekileyo luquka (0001) lwe-4H-SiC kunye (0001) okanye (0001̅) lwe-6H-SiC.

Ukugqitywa Komphezulu: Vavanya ukugqitywa komphezulu wee-wafers ze-SiC okanye ii-substrates. Umphezulu kufuneka ube mpuluswa, upholishwe, kwaye ungabi nazikrwelo okanye izinto ezingcolisayo.

Udumo loMthengisi: Khetha umthengisi othembekileyo onamava amaninzi ekuveliseni ii-wafers ze-SiC ezikumgangatho ophezulu kunye nee-substrates. Cinga ngezinto ezifana nobuchule bokuvelisa, ulawulo lomgangatho, kunye nophononongo lwabathengi.

Ixabiso: Cinga ngeziphumo zeendleko, kuquka ixabiso nge-wafer nganye okanye i-substrate kunye nazo naziphi na iindleko ezongezelelweyo zokwenza ngokwezifiso.

Kubalulekile ukuvavanya ngononophelo ezi zinto kunye nokubonisana neengcali zoshishino okanye ababoneleli ukuqinisekisa ukuba ii-wafers ze-SiC ezikhethiweyo kunye nee-substrates ziyahlangabezana neemfuno zakho ezithile zesicelo.

Umzobo oneenkcukacha

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu (1)
I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu (2)
I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu (3)
I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu (4)
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