I-intshi e-4 Ucoceko oluphezulu lwe-Al2O3 99.999% iSapphire substrate wafer Dia101.6×0.65mmt enoBubude obuPhambili beFlethi

I-intshi ezi-4 Ucoceko oluphezulu Al2O3 99.999% iSapphire substrate wafer Dia101.6×0.65mmt enoMfanekiso oPhambili weFlethi oFakelweyo

Inkcazelo emfutshane:

I-intshi ye-4 (malunga ne-101.6 mm) i-sapphire wafer yi-wafer eyenziwe ngezinto zesafire ezinobubanzi obuyi-intshi ezi-4.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Iimpawu eziqhelekileyo ze-4-intshi yesafire wafers yaziswa ngolu hlobo lulandelayo:

Ukutyeba: Ubukhulu beesafire eziqhelekileyo ziphakathi kwe-0.2 mm kunye ne-2 mm, kwaye ubukhulu obuthile bunokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Umda wokubeka: Kudla ngokubakho icandelo elincinci kumda wewafer elibizwa ngokuba "ngumphetho wokubekwa" okhusela umphezulu we-wafer kunye nomphetho, kwaye uhlala u-amorphous.

Ukulungiswa komphezulu: Iziqwenga zesafire eziqhelekileyo zicolwa ngoomatshini kwaye zigudiswa ngokwemichiza ukugudisa umphezulu.

Iipropathi zomphezulu: Umphezulu wee-wafers zesafire uhlala uneempawu ezilungileyo zokubona, ezinje ngokukhanya okuphantsi kunye nesalathiso esisezantsi se-refractive, ukuphucula ukusebenza kwesixhobo.

Usetyenziso

● I-substrate yokukhula ye-III-V kunye ne-II-VI iikhompawundi

● I-Electronics kunye ne-optoelectronics

● izicelo zeIR

● I-Silicon On Sapphire Integrated Circuit(SOS)

● IRadio Frequency Integrated Circuit(RFIC)

Inkcazo

Into	4-intshi C-plane (0001) 650μm Sapphire Wafers
Izinto zeCrystal	I-99,999%, i-High Purity, i-Monocrystalline Al2O3
IBanga	Prime, Epi-Ready
Ukuqhelaniswa nomphezulu	Inqwelomoya (0001)
	I-C-plane off-engile ukuya ku-M-axis 0.2 +/- 0.1 °
Ububanzi	100.0 mm +/- 0.1 mm
Ukutyeba	650 μm +/- 25 μm
Ukuqhelaniswa neFlethi ePhambili	I-A-plane(11-20) +/- 0.2 °
Ubude beFlethi obuPhambili	30.0 mm +/- 1.0 mm
Icala Elinye Likhazimlisiwe	Umphezulu ongaphambili	I-Epi-ipolishiwe, iRa < 0.2 nm (nge-AFM)
(SSP)	Emva koMphezulu	Umhlaba omhle, iRa = 0.8 μm ukuya kwi-1.2 μm
Icala eliphindwe kabini lilungisiwe	Umphezulu ongaphambili	I-Epi-ipolishiwe, iRa < 0.2 nm (nge-AFM)
(DSP)	Emva koMphezulu	I-Epi-ipolishiwe, iRa < 0.2 nm (nge-AFM)
TTV	< 20 μm
THOBEKA	< 20 μm
WARP	< 20 μm
Ukucoca / ukuPakisha	Ukucoca igumbi le-100 kunye nokupakishwa kwe-vacuum,
	Amaqhekeza angama-25 kwikhasethi enye okanye kwipakethe yesiqwenga esinye.

Sineminyaka emininzi yamava kwishishini lokulungisa isafire. Kubandakanywa imarike yababoneleli baseTshayina, kunye nemarike yeemfuno zamazwe ngamazwe. Ukuba unazo naziphi na iimfuno, nceda uzive ukhululekile ukuqhagamshelana nathi.