I-intshi ezi-4 ubumsulwa obuphezulu i-Al2O3 99.999% ye-Sapphire substrate wafer Dia101.6×0.65mmt enobude obuphezulu obuthe tyaba

I-intshi ezi-4 ubumsulwa obuphezulu I-Al2O3 99.999% I-Sapphire substrate wafer Dia101.6×0.65mmt enobude obuphambili obuthe tyaba Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-wafer yesafire eyi-intshi ezi-4 (malunga ne-101.6 mm) yi-wafer eyenziwe ngezinto zesafire enobubanzi obuziisentimitha ezi-4.

Thumela i-imeyile kuthi

Iimbonakalo

Inkcazo

Iinkcukacha eziqhelekileyo zee-wafers ze-sapphire ezi-4-intshi ziziswa ngolu hlobo lulandelayo:

Ubukhulu: Ubukhulu bee-wafers zesafire eziqhelekileyo buphakathi kwe-0.2 mm kunye ne-2 mm, kwaye ubukhulu obuthile bunokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Umphetho wokubekwa: Ngokwesiqhelo kukho icandelo elincinci kumphetho we-wafer elibizwa ngokuba yi-"mphetho wokubekwa" elikhusela umphezulu we-wafer kunye nomphetho, kwaye lidla ngokuba li-amorphous.

Ukulungiswa komphezulu: Iiwafers zesafire eziqhelekileyo zigaywa ngoomatshini kwaye zicoliwe ngoomatshini ukuze zigudise umphezulu.

Iimpawu zomphezulu: Umphezulu wee-wafers ze-sapphire uhlala uneempawu ezilungileyo zokukhanya, ezinje ngokuqaqamba okuphantsi kunye ne-refractive index ephantsi, ukuphucula ukusebenza kwesixhobo.

Izicelo

● Isiseko sokukhula seekhompawundi ze-III-V kunye ne-II-VI

● Izixhobo ze-elektroniki kunye ne-optoelectronics

● Usetyenziso lwe-IR

● Isekethe edibeneyo yeSilicon kwiSapphire (SOS)

● Isekethe edibeneyo yeRadio Frequency (RFIC)

Inkcazo

Into	IiWafers zeSapphire eziyi-4-intshi (0001) 650μm
Izinto zekristale	99,999%, Ubumsulwa obuphezulu, i-Monocrystalline Al2O3
Ibanga	Inkulu, ilungele i-Epi
Ukujongwa komphezulu	I-C-plane(0001)
	I-C-plane off-engile ukuya kwi-M-axis 0.2 +/- 0.1°
Ububanzi	100.0 mm +/- 0.1 mm
Ubukhulu	650 μm +/- 25 μm
Uqhelaniso oluPhambili oluSicaba	Inqwelo-moya (11-20) +/- 0.2°
Ubude obuPhambili obuSicaba	30.0 mm +/- 1.0 mm
Icala Elinye Elikhazimlisiweyo	Umphezulu ongaphambili	I-Epi-polished, i-Ra < 0.2 nm (yi-AFM)
(SSP)	Umphezulu Ongasemva	Ingca ecolekileyo, iRa = 0.8 μm ukuya kwi-1.2 μm
Icala Eliphindwe Kabini Elikhazimlisiweyo	Umphezulu ongaphambili	I-Epi-polished, i-Ra < 0.2 nm (yi-AFM)
(i-DSP)	Umphezulu Ongasemva	I-Epi-polished, i-Ra < 0.2 nm (yi-AFM)
I-TTV	< 20 μm
I-BOW	< 20 μm
I-WARP	< 20 μm
Ukucoca / Ukupakishwa	Ukucoca igumbi lokucoca kunye nokupakishwa kwe-vacuum yeklasi ye-100,
	Iziqwenga ezingama-25 kwiphakheji enye yekhasethi okanye kwiphakheji enye.

Sinamava eminyaka emininzi kwishishini lokucubungula isafire. Kubandakanya imakethi yababoneleli baseTshayina, kunye nemakethi yeemfuno zamazwe ngamazwe. Ukuba unayo nayiphi na imfuno, nceda uzive ukhululekile ukuqhagamshelana nathi.