I-substrate ye-carbide ye-Sic silicon eyi-intshi ezi-2 6H-N Uhlobo lwe-0.33mm 0.43mm yokupholisha emacaleni amabini Ukuqhuba okuphezulu kobushushu Ukusetyenziswa kwamandla aphantsi

I-substrate ye-Sic silicon carbide eyi-intshi ezi-2 6H-N Uhlobo lwe-0.33mm 0.43mm ukupholisha okumacala amabini Ukuqhuba okuphezulu kobushushu Ukusetyenziswa kwamandla aphantsi Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Silicon carbide (i-SiC) sisixhobo se-semiconductor esinobubanzi bebhendi ebanzi esinokuqhuba kakuhle kobushushu kunye nozinzo lweekhemikhali.6H-Nibonisa ukuba isakhiwo sayo sekristale sinama-hexagonal (6H), kwaye u-“N” ubonisa ukuba sisixhobo se-semiconductor sohlobo lwe-N, esidla ngokufezekiswa ngokufaka i-nitrogen kwi-doping.
I-substrate ye-silicon carbide ineempawu ezibalaseleyo zokuxhathisa uxinzelelo oluphezulu, ukumelana nobushushu obuphezulu, ukusebenza rhoqo, njl. Xa kuthelekiswa neemveliso ze-silicon, isixhobo esilungiselelwe yi-substrate ye-silicon sinokunciphisa ilahleko nge-80% kwaye sinciphise ubungakanani besixhobo nge-90%. Ngokuphathelele izithuthi zamandla amatsha, i-silicon carbide inokunceda izithuthi zamandla amatsha ukuba zifumane ukukhanya okulula kwaye zinciphise ilahleko, kwaye zonyuse uluhlu lokuqhuba; Kwicandelo lonxibelelwano lwe-5G, ingasetyenziselwa ukwenza izixhobo ezinxulumene noko; Kwimveliso yamandla e-photovoltaic inokuphucula ukusebenza kakuhle kokuguqulwa; Intsimi yothutho lwesitimela ingasebenzisa iimpawu zayo zobushushu obuphezulu kunye nokuxhathisa uxinzelelo oluphezulu.

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Ezi zilandelayo ziimpawu ze-2inch silicon carbide wafer

1. Ubunzima: Ubunzima be-Mohs bumalunga ne-9.2.
2. Ulwakhiwo lwekristale: ulwakhiwo lwelatisi olunesiqingatha.
3. Ukuqhuba okuphezulu kobushushu: ukuqhubela phambili kobushushu beSiC kuphezulu kakhulu kunokwesilicon, nto leyo enceda ekuchitheni ubushushu ngempumelelo.
4. Umsantsa webhendi ebanzi: umsantsa webhendi yeSiC umalunga ne-3.3eV, ufanelekile kubushushu obuphezulu, iifrikhwensi eziphezulu kunye nokusetyenziswa kwamandla aphezulu.
5. Intsimi yombane eqhekekileyo kunye nokuhamba kwee-elektroni: Intsimi yombane eqhekekileyo kakhulu kunye nokuhamba kwee-elektroni, ifanelekile kwizixhobo ze-elektroniki ezinamandla nezisebenzayo ezifana neeMOSFET kunye nee-IGBT.
6. Uzinzo lweekhemikhali kunye nokumelana nemitha: zifanelekile kwiindawo ezirhabaxa ezifana neenqwelo moya kunye nokhuselo lwesizwe. Ukumelana neekhemikhali okugqwesileyo, i-asidi, i-alkali kunye nezinye izinyibilikisi zeekhemikhali.
7. Amandla aphezulu oomatshini: Amandla agqwesileyo oomatshini phantsi kobushushu obuphezulu kunye noxinzelelo oluphezulu.
Ingasetyenziswa kakhulu kwizixhobo ze-elektroniki ezinamandla aphezulu, amaza aphezulu kunye nobushushu obuphezulu, ezifana nee-ultraviolet photodetectors, ii-photovoltaic inverters, ii-PCU zezithuthi zombane, njl.

I-wafer ye-silicon carbide ye-2inch inezicelo ezininzi.

1. Izixhobo ze-elektroniki ezisebenzisa amandla: ezisetyenziselwa ukuvelisa i-MOSFET, i-IGBT kunye nezinye izixhobo ezinamandla aphezulu, ezisetyenziswa kakhulu ekuguquleni amandla kunye nezithuthi zombane.

Izixhobo ze-2.Rf: Kwizixhobo zonxibelelwano, i-SiC ingasetyenziswa kwi-high-frequency amplifiers kunye ne-RF power amplifiers.

3. Izixhobo ze-Photoelectric: ezifana nee-LED ezisekelwe kwi-SIC, ingakumbi kwizicelo eziluhlaza okwesibhakabhaka kunye ne-ultraviolet.

4.Iisensa: Ngenxa yobushushu bayo obuphezulu kunye nokumelana neekhemikhali, ii-substrates zeSiC zingasetyenziselwa ukwenza iisensa zobushushu obuphezulu kunye nezinye izicelo zeesensa.

5. Umkhosi kunye neenqwelo-moya: ngenxa yokumelana nobushushu obuphezulu kunye neempawu zayo ezinamandla aphezulu, ifanelekile ukusetyenziswa kwiindawo ezishushu kakhulu.

Iindawo eziphambili zokusetyenziswa kwe-6H-N type 2 "SIC substrate ziquka izithuthi zamandla amatsha, izitishi zokudlulisa amandla aphezulu kunye notshintsho, iimpahla ezimhlophe, oololiwe abakhawulezayo, iimoto, i-photovoltaic inverter, umbane we-pulse njalo njalo.

I-XKH ingenziwa ngokwezifiso ngobukhulu obahlukeneyo ngokweemfuno zabathengi. Kukho iindlela ezahlukeneyo zokurhabaxa kunye nonyango lokupolisha. Iindidi ezahlukeneyo zokupolisha (ezifana nokupolisha nge-nitrogen) ziyaxhaswa. Ixesha eliqhelekileyo lokuhambisa ziiveki ezi-2-4, kuxhomekeke kwindlela eyenziwe ngayo ngokwezifiso. Sebenzisa izixhobo zokupakisha ezichasene nokunganyakazi kunye ne-anti-seismic foam ukuqinisekisa ukhuseleko lwe-substrate. Kukho iindlela ezahlukeneyo zokuthumela, kwaye abathengi banokujonga imeko yezothutho ngexesha langempela ngenombolo yokulandelela enikiweyo. Nika inkxaso yobugcisa kunye neenkonzo zokubonisana ukuqinisekisa ukuba abathengi banokusombulula iingxaki kwinkqubo yokusebenzisa.