I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi

I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm ukupolishwa kwamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi Ukusetyenziswa komfanekiso obonakalayo

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) yi-wide band gap semiconductor imathiriyeli ene-thermal conductivity egqwesileyo kunye nokuzinza kweekhemikhali. Uhlobo lwe-6H-N lubonisa ukuba isakhiwo sayo se-crystal sine-hexagonal (6H), kwaye "N" ibonisa ukuba yinto ye-N-type semiconductor material, edla ngokufezekiswa nge-doping nitrogen.
I-silicon carbide substrate ineempawu ezibalaseleyo zokumelana noxinzelelo oluphezulu, ukumelana nobushushu obuphezulu, ukusebenza rhoqo rhoqo, njl. Ngokubhekiselele kwizithuthi zamandla amatsha, i-silicon carbide inokunceda izithuthi zamandla amatsha zifezekise ukukhanya kunye nokunciphisa ilahleko, kunye nokwandisa uluhlu lokuqhuba; Kwintsimi yonxibelelwano lwe-5G, ingasetyenziselwa ukwenziwa kwezixhobo ezinxulumeneyo; Kwimveliso yamandla e-photovoltaic inokuphucula ukusebenza kakuhle kokuguqulwa; Intsimi yothutho lukaloliwe inokusebenzisa ubushushu bayo obuphezulu kunye neempawu zokumelana noxinzelelo oluphezulu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ezi zilandelayo ziimpawu ze-2inch silicon carbide wafer

1. Ukuqina: Ubulukhuni be-Mohs bumalunga ne-9.2.
2. Ubume beCrystal: ubume be-lattice enehexagonal.
3. I-conductivity ephezulu ye-thermal: i-thermal conductivity ye-SiC iphezulu kakhulu kune-silicon, ehambelana nokutshatyalaliswa kokushisa okusebenzayo.
4. I-gap yebhendi ebanzi: i-gap yebhendi ye-SiC malunga ne-3.3eV, ilungele ukushisa okuphezulu, ukuphindaphinda okuphezulu kunye nezicelo zamandla aphezulu.
5. Ukuchithwa kwentsimi yombane kunye nokuhamba kwe-electron: Ukutshatyalaliswa okuphezulu kombane kunye nokuhamba kwe-electron, okufanelekileyo kumandla asebenzayo ombane anjenge-MOSFET kunye ne-IGBTs.
6. Uzinzo lwekhemikhali kunye nokumelana nemitha: ilungele imeko engqongileyo efana ne-aerospace kunye nokhuselo lwelizwe. Ukumelana neekhemikhali ezigqwesileyo, iasidi, ialkali kunye nezinye izinyibilikisi zeekhemikhali.
7. Amandla aphezulu omatshini: Amandla omatshini agqwesileyo phantsi kobushushu obuphezulu kunye noxinzelelo oluphezulu.
Ingasetyenziswa ngokubanzi kumandla aphezulu, i-frequency ephezulu kunye nobushushu obuphezulu bezixhobo ze-elektroniki, ezifana ne-ultraviolet photodetectors, i-photovoltaic inverters, i-PCU yemoto yombane, njl.

I-2inch ye-silicon carbide wafer inezicelo ezininzi.

I-1.Izixhobo zombane zombane: ezisetyenziselwa ukuvelisa amandla aphezulu e-MOSFET, i-IGBT kunye nezinye izixhobo, ezisetyenziswa ngokubanzi ekuguquleni amandla kunye nezithuthi zombane.

Izixhobo ze-2.Rf: Kwizixhobo zonxibelelwano, i-SiC ingasetyenziswa kwi-high-frequency amplifiers kunye ne-RF power amplifiers.

I-3.Izixhobo ze-Photoelectric: ezifana ne-SIC-based leds, ngokukodwa kwi-blue and ultraviolet izicelo.

I-4.Sensors: Ngenxa yokushisa kwayo okuphezulu kunye nokuchasana kweekhemikhali, i-substrates ye-SiC ingasetyenziselwa ukuvelisa i-sensor yeqondo eliphezulu kunye nezinye izicelo zenzwa.

I-5.I-Military kunye ne-aerospace: ngenxa yokumelana nokushisa okuphezulu kunye neempawu zamandla aphezulu, ezifanelekileyo zokusetyenziswa kwiindawo ezigqithiseleyo.

Iinkalo zesicelo eziphambili ze-6H-N uhlobo lwe-2 "i-SIC substrate ibandakanya izithuthi zamandla amatsha, izikhululo zokuhanjiswa kwamandla aphezulu kunye nezikhululo zokuguqulwa, iimpahla ezimhlophe, izitimela ezihamba ngesantya esiphezulu, iimoto, i-photovoltaic inverter, i-pulse power supply kunye nokunye.

I-XKH inokwenziwa ngokwezifiso ezinobunzima obahlukeneyo ngokweemfuno zabathengi. Uburhabaxa bomphezulu obahlukeneyo kunye nonyango lokugudisa luyafumaneka. Iindidi ezahlukeneyo zedoping (ezifana ne-nitrogen doping) ziyaxhaswa. Ixesha lokuhambisa eliqhelekileyo li-2-4 iiveki, kuxhomekeke kwi-customization. Sebenzisa izinto zokupakisha ezichasene ne-static kunye ne-anti-seismic foam ukuqinisekisa ukhuseleko lwe-substrate. Iinketho ezahlukeneyo zokuthumela ziyafumaneka, kwaye abathengi banokujonga ubume bezinto zokuhamba ngexesha langempela ngenombolo yokulandelela enikiweyo. Ukubonelela ngenkxaso yobugcisa kunye neenkonzo zokubonisana ukuqinisekisa ukuba abathengi banokucombulula iingxaki kwinkqubo yokusetyenziswa.