I-substrate ye-SiC eyi-12 intshi Ububanzi obuyi-300mm Ubukhulu obuyi-750μm Uhlobo lwe-4H-N lungenziwa ngokwezifiso

Inkcazo emfutshane:

Kwixesha elibalulekileyo lokutshintsha kweshishini le-semiconductor ukuya kwizisombululo ezisebenzayo nezincinci, ukuvela kwe-substrate ye-SiC eyi-intshi ezili-12 (i-substrate ye-silicon carbide eyi-intshi ezili-12) kutshintshe ngokusisiseko imeko-bume. Xa kuthelekiswa neenkcukacha zemveli ze-intshi ezi-6 kunye ne-intshi ezi-8, inzuzo enkulu ye-substrate eyi-intshi ezili-12 inyusa inani leetships eziveliswa kwi-wafer nganye ngokuphindwe kane. Ukongeza, ixabiso leyunithi ye-substrate ye-SiC eyi-intshi ezili-12 lincitshiswe ngama-35-40% xa kuthelekiswa ne-substrate zesiqhelo ze-intshi ezi-8, nto leyo ibalulekileyo ekwamkelweni ngokubanzi kweemveliso zokugqibela.
Ngokusebenzisa itekhnoloji yethu yokukhulisa ukuthuthwa komphunga, sifikelele kulawulo oluphambili kushishino malunga noxinano lwe-dislocation kwiikristale ze-12-intshi, nto leyo ebonelela ngesiseko esikhethekileyo sezinto zokwakha izixhobo ezilandelayo. Olu phuculo lubaluleke kakhulu phakathi kokunqongophala kweetships kwihlabathi liphela.

Izixhobo zamandla eziphambili kwizicelo zemihla ngemihla—ezifana nezikhululo zokutshaja ngokukhawuleza ze-EV kunye nezikhululo zesiseko ze-5G—ziyamkela ngakumbi le substrate inkulu. Ingakumbi kwiindawo ezinobushushu obuphezulu, ezine-voltage ephezulu, kunye nezinye iindawo zokusebenza ezinzima, i-substrate ye-SiC eyi-12-intshi ibonisa uzinzo oluphezulu kakhulu xa ithelekiswa nezinto ezisekwe kwi-silicon.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Inkcazelo ye-Substrate ye-Silicon Carbide (SiC) ye-intshi ezili-12
Ibanga		Imveliso yeZeroMPD Ibanga (Ibanga le-Z)	Imveliso Esemgangathweni Ibanga (Ibanga le-P)		Ibanga elingeyonyani (Ibanga le-D)
Ububanzi		3 0 0 mm~1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Uqeqesho lweWafer		I-axis engasebenziyo: 4.0° ukuya kwi-<1120 >±0.5° kwi-4H-N, I-axis engasebenziyo: <0001>±0.5° kwi-4H-SI
Uxinano lweeMipayipi ezincinci	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba		{10-10} ±5.0°
Ubude obuPhambili obuSicaba	4H-N	N / A
	4H-SI	I-Notch
Ukukhutshwa komda		3 mm
I-LTV/TTV/Isaphetha/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
Iimfantu zoMphetho ngokukhanya okuphezulu Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Iindawo zePolytype Ngokukhanya Okuphezulu Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu		Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye			Ubude obuqokelelweyo ≤ 20 mm, ubude obunye ≤2 mm Indawo eqokelelweyo ≤0.1% Indawo eqokelelweyo≤3% Indawo eqokelelweyo ≤3% Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho ngokukhanya okuphezulu		Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm			7 zivunyelwe, ≤1 mm nganye
(TSD) Ukususwa kwesikrufu sokutsala imisonto		≤500 cm-2		N / A
(BPD) Ukususwa kwesiseko sendiza		≤1000 cm-2		N / A
Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo		Akukho nanye
Ukupakisha		Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye
Amanqaku:
1 Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo yokukhupha umphetho. 2 Imikrwelo mayijongwe ebusweni bukaSi kuphela. 3 Idatha yokwahlukana kwesakhiwo ivela kwiiwafers eziqoshiweyo ze-KOH kuphela.

Ezona mpawu

1. Amandla eMveliso kunye neeNzuzo zeendleko: Ukuveliswa ngobuninzi kwe-substrate ye-SiC eyi-intshi ezili-12 (i-substrate ye-silicon carbide eyi-intshi ezili-12) kuphawula ixesha elitsha kwimveliso ye-semiconductor. Inani leetships ezifumaneka kwi-wafer enye lifikelela ngokuphindwe kayi-2.25 kune-substrates eziyi-intshi ezi-8, nto leyo eqhuba ngokuthe ngqo ukunyuswa kokusebenza kakuhle kwemveliso. Ingxelo yabathengi ibonisa ukuba ukwamkela ii-substrates eziyi-intshi ezili-12 kuye kunciphisa iindleko zabo zemveliso yemodyuli yamandla ngama-28%, kudala ithuba lokhuphiswano oluqinisekileyo kwimarike ekhuphisana kakhulu.
2. Iipropati Ezibalaseleyo Zomzimba: I-substrate ye-SiC eyi-intshi ezili-12 izuza zonke izibonelelo zezinto ze-silicon carbide - ukuhanjiswa kwayo kobushushu kuphindwe kathathu kune-silicon, ngelixa amandla ayo okuqhekeka efikelela kalishumi kune-silicon. Ezi mpawu zivumela izixhobo ezisekelwe kwi-substrates eziyi-intshi ezili-12 ukuba zisebenze ngokuzinzileyo kwiindawo ezinobushushu obuphezulu obungaphezulu kwama-200°C, nto leyo eyenza ukuba zifaneleke ngakumbi kwizicelo ezinzima ezifana nezithuthi zombane.
3. Iteknoloji Yonyango Lomphezulu: Siphuhlise inkqubo entsha yokupolisha ngoomatshini bekhemikhali (CMP) ngokukodwa kwi-substrates ze-SiC eziyi-12-intshi, ukufikelela kwinqanaba le-atomic-level flatness (Ra<0.15nm). Le mpumelelo isombulula umngeni wehlabathi jikelele wonyango lomphezulu we-silicon carbide wafer omkhulu, isusa imiqobo yokukhula kwe-epitaxial esemgangathweni ophezulu.
4. Ukusebenza koLawulo lobushushu: Kwiindlela ezisebenzayo, ii-substrates ze-SiC eziyi-12-intshi zibonisa amandla amangalisayo okusasaza ubushushu. Idatha yovavanyo ibonisa ukuba phantsi kobunzima obufanayo bamandla, izixhobo ezisebenzisa ii-substrates eziyi-12-intshi zisebenza kumaqondo obushushu angama-40-50°C aphantsi kunezixhobo ezisekelwe kwi-silicon, nto leyo eyandisa kakhulu ubomi benkonzo yezixhobo.

Izicelo eziphambili

1. Inkqubo entsha yeZithuthi zamandla: I-substrate ye-SiC eyi-intshi ezili-12 (i-substrate ye-silicon carbide eyi-intshi ezili-12) itshintsha uyilo lwe-powertrain yezithuthi zombane. Ukusuka kwiitshaja ezikwi-onboard (OBC) ukuya kwii-inverters eziphambili kunye neenkqubo zolawulo lwebhetri, uphuculo lokusebenza oluziswa zii-substrate eziyi-intshi ezili-12 lonyusa uluhlu lwezithuthi nge-5-8%. Iingxelo ezivela kumenzi weemoto ophambili zibonisa ukuba ukusebenzisa ii-substrate zethu eziyi-intshi ezili-12 kunciphisa ukulahleka kwamandla kwinkqubo yazo yokutshaja ngokukhawuleza nge-62% emangalisayo.
2. Icandelo laMandla aHlaziyiweyo: Kwizikhululo zamandla ze-photovoltaic, ii-inverters ezisekwe kwi-substrates ze-SiC eziyi-12-intshi azinazo nje kuphela izinto ezincinci kodwa zikwafikelela ekusebenzeni kakuhle kokuguqulwa okungaphezulu kwe-99%. Ingakumbi kwiimeko zokuvelisa ezisasazekileyo, oku kusebenza okuphezulu kuthetha ukonga imali yonyaka yamakhulu amawaka eeyuan kwilahleko zombane kubaqhubi.
3.Ukwenziwa kwezinto ngokuzenzekelayo kwimizi-mveliso: Ii-frequency converters ezisebenzisa ii-substrates ze-12-intshi zibonisa ukusebenza kakuhle kwiirobhothi zoshishino, izixhobo zoomatshini be-CNC, kunye nezinye izixhobo. Iimpawu zazo zokutshintsha ii-frequency eziphezulu ziphucula isantya sokuphendula kwemoto nge-30% ngelixa zinciphisa ukuphazamiseka kwe-electromagnetic ukuya kwisinye kwisithathu sezisombululo eziqhelekileyo.
4. Uphuhliso lwe-Elektroniki zabathengi: Iitekhnoloji zesizukulwana esilandelayo zokutshaja ngokukhawuleza kweefowuni ziqalile ukusebenzisa ii-substrates ze-SiC ze-intshi ezili-12. Kuqikelelwa ukuba iimveliso zokutshaja ngokukhawuleza ezingaphezu kwama-65W ziya kutshintshela ngokupheleleyo kwizisombululo ze-silicon carbide, kunye nee-substrates ze-intshi ezili-12 ezivela njengokhetho olufanelekileyo lweendleko kunye nokusebenza kakuhle.

Iinkonzo ezenzelwe wena ze-XKH ze-12-intshi SiC Substrate

Ukuze kuhlangatyezwane neemfuno ezithile ze-12-intshi SiC substrates (12-intshi silicon carbide substrates), i-XKH inikezela ngenkxaso epheleleyo yenkonzo:
1.Ukwenza ngokwezifiso ubukhulu:
Sinikezela ngezixhobo eziziisentimitha ezili-12 kwiinkcukacha ezahlukeneyo zobukhulu kuquka ne-725μm ukuhlangabezana neemfuno ezahlukeneyo zokusetyenziswa.
2. Uxinzelelo lwe-Doping:
Ukwenziwa kwethu kuxhasa iintlobo ezininzi zokuqhuba umbane kuquka ii-substrates ze-n-type kunye ne-p-type, kunye nolawulo oluchanekileyo lokumelana nombane kuluhlu lwe-0.01-0.02Ω·cm.
3. Iinkonzo zoVavanyo:
Ngezixhobo zovavanyo ezipheleleyo zenqanaba le-wafer, sinikezela ngeengxelo ezipheleleyo zovavanyo.
I-XKH iyaqonda ukuba umthengi ngamnye uneemfuno ezizodwa ze-substrates ze-SiC eziyi-12-intshi. Ngoko ke sinikezela ngeemodeli zentsebenziswano yeshishini eziguquguqukayo ukubonelela ngezisombululo ezikhuphisanayo, nokuba zezo:
· Iisampuli ze-R&D
· Ukuthengwa kwemveliso yomthamo
Iinkonzo zethu ezenzelwe wena ziqinisekisa ukuba singahlangabezana neemfuno zakho zobugcisa nezemveliso ze-substrates ze-SiC eziyi-12-intshi.