I-12 Intshi ye-SiC substrate Ububanzi 300mm Ukutyeba 750μm 4H-N Uhlobo lunokwenziwa ngokwezifiso

I-12 Intshi ye-SiC substrate Ububanzi obungama-300mm Ukutyeba 750μm 4H-N Uhlobo lunokwenziwa ngokwezifiso Umfanekiso ofakiweyo

Inkcazelo emfutshane:

Kwixesha elibalulekileyo kwinguqu yoshishino lwesemiconductor ukuya kwizisombululo ezisebenza ngakumbi nezihlangeneyo, ukuvela kwe-12-intshi ye-SiC substrate (i-12-intshi ye-silicon carbide substrate) iyiguqule ngokusisiseko imbonakalo-mhlaba. Xa kuthelekiswa neenkcukacha zemveli ze-6-intshi kunye ne-8-intshi, inzuzo enkulu yobungakanani be-12-intshi substrate yonyusa inani leetshiphusi eziveliswa ngewafa nganye ngokuphindwe kane. Ukongezelela, ixabiso leyunithi ye-12-intshi ye-SiC substrate iyancipha nge-35-40% xa kuthelekiswa ne-substrates eqhelekileyo ye-8-intshi, ebaluleke kakhulu ekwamkelweni okubanzi kweemveliso zokuphela.
Ngokusebenzisa itekhnoloji yethu yokukhula kothutho lomphunga, sizuze ulawulo olukhokelayo kushishino phezu koxinaniso lokugxothwa kwiikristale ze-intshi ezili-12, sibonelela ngesiseko esikhethekileyo semathiriyeli sokwenziwa kwesixhobo esilandelayo. Le nkqubela phambili ibaluleke kakhulu phakathi kokunqongophala kwangoku kweetshiphu zehlabathi.

Izixhobo zamandla eziphambili kwizicelo zemihla ngemihla-ezifana nezikhululo zokutshaja ngokukhawuleza kwe-EV kunye nezikhululo zesiseko ze-5G-ziya zisanda kwamkela le substrate enkulu. Ngokukodwa kubushushu obuphezulu, i-high-voltage, kunye nezinye iindawo zokusebenza ezinzima, i-12-intshi ye-SiC substrate ibonisa ukuzinza okuphezulu kakhulu xa kuthelekiswa nezinto ezisekelwe kwi-silicon.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iiparamitha zobugcisa

I-12 intshi yeSilicon Carbide (SiC) Inkcazo yeSubstrate
IBanga		Imveliso yeZeroMPD IBanga (Z Grade)	Imveliso esemgangathweni IBanga (P Grade)		IBanga leDummy (D Grade)
Ububanzi		3 0 0 mm~1305mm
Ukutyeba	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		I-off axis : 4.0 ° ukuya ku- <1120 > ±0.5 ° ye-4H-N, Kwi-axis : <0001>±0.5 ° ye-4H-SI
Ukuxinana kweMibhobho	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqhelaniswa neFlethi okuPhambili		{10-10} ±5.0°
Ubude beFlethi obuPhambili	4H-N	N / A
	4H-SI	Inotshi
Ukungabandakanywa kuMda		3 mm
LTV/TTV/Saphetha/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		IsiPolish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo Iipleyiti zeHex ngokuKhanya okuPhakamileyo Iindawo zePolytype NgokuKhanya okuPhakamileyo Ukubandakanywa kweCarbon ebonakalayo I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo		Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye			Ubude obongezelekayo ≤ 20 mm, ubude obunye≤2 mm Indawo eyongezelekayo ≤0.1% Indawo eyongezelekayo≤3% Indawo eyongezelekayo ≤3% Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips NgokuKhanya okuPhakamileyo		Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu			I-7 ivunyelwe, ≤1 mm nganye
(TSD) Ukushenxiswa kwesikrufu somsonto		≤500 cm-2		N / A
(BPD) Isiseko sokuchithwa kwenqwelomoya		≤1000 cm-2		N / A
Ukungcoliswa komphezulu weSilicon ngokuKhanya okuPhakamileyo		Akukho nanye
Ukupakishwa		Multi-wafer Cassette Okanye Single Wafer Container
Amanqaku:
1 Imida yeziphene isebenza kuwo wonke umphezulu we-wafer ngaphandle kwendawo yokukhutshwa komphetho. 2Imikrwelo kufuneka ijongwe kuSi face kuphela. 3 Idatha yokususa isuka kwi-KOH etshisiweyo kuphela.

Ezona mpawu

I-1.Umthamo wemveliso kunye neeNdleko zeNdleko: Ukuveliswa kobuninzi be-12-intshi ye-SiC substrate (i-12-intshi ye-silicon carbide substrate) ibonisa ixesha elitsha kwimveliso ye-semiconductor. Inani leetshiphusi ezifumaneka kwi-wafer enye lifikelela ku-2.25 ngokuphindwe kwi-8-intshi substrates, liqhuba ngokuthe ngqo ukutsiba ekusebenzeni kwemveliso. Ingxelo yoMthengi ibonisa ukuba ukwamkela i-substrates ye-intshi eyi-12 kuye kwanciphisa iindleko zabo zokuvelisa imodyuli yamandla ngama-28%, ukudala inzuzo eqinisekileyo yokukhuphisana kwimarike ekhuphisana ngokukrakra.
I-2.Iimpahla ezigqwesileyo zoMzimba: I-12-intshi ye-SiC substrate izuza zonke iingenelo zezinto ze-silicon carbide - i-conductivity yayo ye-thermal yi-3 yamaxesha e-silicon, ngelixa amandla ayo entsimi yokuphuka afikelela kumaxesha angama-10 e-silicon. Ezi mpawu zivumela izixhobo ezisekelwe kwii-substrates ze-intshi ezili-12 ukuba zisebenze ngokuzinzile kwiindawo eziphakamileyo zokushisa ezingaphezu kwe-200 ° C, okwenza ukuba zifaneleke ngokukodwa kwizicelo ezifunwayo ezifana neenqwelo zombane.
I-3.Ubuchwephesha boNyango lwe-Surface: Siye saqulunqa inkqubo ye-novel chemical mechanical polishing (CMP) ngokukodwa kwi-substrates ye-SiC ye-intshi eyi-12, ukufezekisa i-atomic-level surface flatness (Ra <0.15nm). Le mpumelelo isombulula umceli mngeni wehlabathi jikelele wonyango lomphezulu we-silicon carbide wafer wafer surface, ukususa imiqobo ekukhuleni komgangatho ophezulu we-epitaxial.
I-4.Ukusebenza koLawulo lwe-Thermal: Kwizicelo eziphathekayo, ii-substrates ze-SiC ze-12-intshi zibonisa amandla amangalisayo okutshatyalaliswa kobushushu. Idatha yokuvavanya ibonisa ukuba phantsi koxinzelelo lwamandla afanayo, izixhobo ezisebenzisa i-12-intshi substrates zisebenza kumaqondo okushisa angama-40-50 ° C ngaphantsi kwezixhobo ezisekelwe kwi-silicon, zandisa kakhulu ubomi benkonzo yezixhobo.

Izicelo eziphambili

1.I-Ecosystem yesiThuthi saMandla eNtsha: I-12-intshi ye-SiC substrate (i-12-intshi ye-silicon carbide substrate) iguqula i-architecture yombane wesithuthi sombane. Ukusuka kwiitshaja ze-onboard (OBC) ukuya kwii-inverters eziphambili kunye neenkqubo zokulawula ibhetri, ukuphuculwa kokusebenza okuziswa yi-12-intshi substrates kwandisa uluhlu lwezithuthi nge-5-8%. Iingxelo ezivela kwi-automaker ehamba phambili ibonisa ukuba ukwamkela i-substrates yethu ye-intshi eyi-12 kunciphisa ukulahlekelwa kwamandla kwinkqubo yabo yokutshaja ngokukhawuleza nge-62%.
I-2.Icandelo laMandla aHlaziywayo: Kwizikhululo zamandla e-photovoltaic, ii-inverters ezisekelwe kwi-12-intshi ye-SiC substrates azibonisi nje izinto ezincinci zefom kodwa zifezekisa ukusebenza kakuhle kokuguqulwa okudlula i-99%. Ingakumbi kwimiba esasazwayo yokuvelisa, olu buchule buphezulu buguqulela kugcino lonyaka lwamakhulu amawaka eeyuan kwilahleko yombane kubasebenzi.
I-3.Industrial Automation: Abaguquli bee-frequency abasebenzisa i-12-intshi substrates babonisa ukusebenza kakuhle kwiirobhothi zoshishino, izixhobo zomatshini we-CNC, kunye nezinye izixhobo. Iimpawu zabo zokutshintsha kwe-frequency ephezulu ziphucula isantya sokuphendula i-motor nge-30% ngelixa behlisa ukuphazamiseka kwe-electromagnetic kwisinye kwisithathu sezisombululo eziqhelekileyo.
I-4.I-Consumer Electronics Innovation: Isizukulwana esilandelayo seteknoloji ye-smartphone yokutshaja ngokukhawuleza sele iqalile ukwamkela i-12-intshi ye-SiC substrates. Kuqikelelwa ukuba iimveliso zokutshaja ngokukhawuleza ngaphezulu kwe-65W ziya kutshintshela ngokupheleleyo kwizisombululo ze-silicon carbide, kunye ne-12-intshi ye-substrates evelayo njengolona khetho lufanelekileyo lweendleko.

Iinkonzo eziLungisiweyo ze-XKH ze-12-intshi ye-SiC Substrate

Ukuhlangabezana neemfuno ezithile ze-12-intshi ye-SiC substrates (i-12-intshi ye-silicon carbide substrates), i-XKH inikezela ngenkxaso yenkonzo ebanzi:
1.Ukutyeba ngokwezifiso:
Sibonelela ngee-12-intshi substrates kwiinkcukacha ezahlukeneyo zobunzima kubandakanya i-725μm ukuhlangabezana neemfuno ezahlukeneyo zesicelo.
2. Uxinzelelo lwedoping:
Imveliso yethu isekela iintlobo ezininzi ze-conductivity ezibandakanya i-n-type kunye ne-p-type substrates, kunye nolawulo oluchanekileyo lokumelana noluhlu lwe-0.01-0.02Ω · cm.
3. Iinkonzo zoVavanyo:
Ngezixhobo ezipheleleyo zokuvavanya i-wafer-level, sinikezela ngeengxelo zokuhlola ezipheleleyo.
I-XKH iyaqonda ukuba umthengi ngamnye uneemfuno ezizodwa ze-12-intshi ye-SiC substrates. Ke ngoko sibonelela ngeemodeli zentsebenziswano yeshishini eziguquguqukayo ukubonelela ngezona zisombululo zikhuphisanayo, nokuba:
· Iisampulu zeR&D
· Ukuthengwa komthamo womthamo
Iinkonzo zethu ezilungiselelweyo ziqinisekisa ukuba sinokuhlangabezana neemfuno zakho ezithile zobugcisa kunye nemveliso ye-12-intshi ye-SiC substrates.