Inkqubo yokuJonga iWafer yoMlinganiselo wokuJongene neCrystal

Inkqubo yokuqhelaniswa neWafer yeCrystal Orientation Measurement eFakelweyo Umfanekiso

Inkcazelo emfutshane:

Isixhobo se-wafer orientation sisixhobo esichaneke kakhulu esisebenzisa imigaqo ye-X-ray diffraction ukwandisa ukwenziwa kwe-semiconductor kunye neenkqubo zesayensi yemathiriyeli ngokumisela i-crystallographic orientation. Amacandelo ayo angundoqo aquka umthombo we-X-ray (umzekelo, i-Cu-Kα, i-0.154 nm wavelength), i-goniometer echanekileyo (isisombululo se-angular ≤0.001 °), kunye ne-detectors (i-CCD okanye i-scintillation counters). Ngokujikeleza iisampulu kunye nokuhlalutya iipatheni ze-diffraction, ibala i-crystallographic indices (umzekelo, i-100, i-111) kunye nesithuba se-lattice nge-± 30 arcsecond ukuchaneka. Inkqubo isekela ukusebenza okuzenzekelayo, ukulungiswa kwe-vacuum, kunye nokujikeleza kwe-multi-axis, ehambelana ne-2-8-intshi ye-wafers yokulinganisa ngokukhawuleza i-wafer edges, iindiza zokubhekisela, kunye nokulungelelaniswa kwe-epitaxial layer. Usetyenziso oluphambili lubandakanya i-silicon carbide ejolise ekusikeni, ii-wafers zesafire, kunye ne-turbine blade yokuqinisekisa ukusebenza kobushushu obuphezulu, ukuqinisa ngokuthe ngqo iipropathi zombane ze-chip kunye nesivuno.

Thumela i-imeyile kuthi

Iimbonakalo

Intshayelelo yeZixhobo

Izixhobo zokuqhelaniswa ne-wafer zizixhobo ezichanekileyo ezisekwe kwimigaqo ye-X-ray diffraction (XRD), esetyenziswa ikakhulu kwimveliso ye-semiconductor, imathiriyeli ebonakalayo, iiseramikhi, kunye namanye amashishini ezinto ezikristale.

Ezi zixhobo zimisela i-crystal lattice orientation kunye nesikhokelo esichanekileyo sokusika okanye iinkqubo zokupolisha. Iimpawu eziphambili ziquka:

Imilinganiselo yokuchaneka okuphezulu:Iyakwazi ukusombulula iindiza zecrystallographic ezinezisombululo ze-angular ukuya kuthi ga kwi-0.001 °.
Isampulu ehambelanayo enkulu:Ixhasa ama-wafers ukuya kuthi ga kwi-450 mm ububanzi kunye nobunzima obungama-30 kg, alungele izixhobo ezifana nesilicon carbide (SiC), isafire, kunye nesilicon (Si).
Uyilo lwemodyuli:Imisebenzi eyongezelelweyo ibandakanya uhlalutyo lwe-rocking curve, imephu ye-3D yesiphene somgangatho, kunye nezixhobo zokupakisha zokusetyenzwa kweesampulu ezininzi.

IiParameters eziphambili zobuGcisa

Uluhlu lweParameter	Amaxabiso aqhelekileyo/Uqwalaselo
Umthombo weX-ray	I-Cu-Kα (indawo ekugxilwe kuyo yi-0.4×1 mm), 30 kV amandla ombane akhawulezayo, 0–5 mA ityhubhu ehlengahlengiswayo ngoku
Uluhlu lweAngular	θ: -10 ° ukuya +50 °; 2θ: -10° ukuya +100°
Ukuchaneka	Isisombululo se-angle ethambekileyo: 0.001 °, ukubonwa kwesiphene somphezulu: ± 30 arcseconds (ijika elijikajikayo)
Isantya sokuskena	Ukuskena kwe-Omega kugqiba ukuqhelaniswa ne-lattice epheleleyo kwimizuzwana emi-5; Ukuskena kweTheta kuthatha ~1 umzuzu
Inqanaba leSampuli	I-V-groove, ukufunxa umoya, ukujikeleziswa kwee-angle ezininzi, iyahambelana nee-intshi ezi-2–8 zeewafers
Imisebenzi Eyandiswayo	Uhlalutyo oluguquguqukayo lwegophe, imephu ye-3D, isixhobo sokupakisha, ukubonwa kwesiphene samehlo (imikrwelo, ii-GBs)

Umgaqo wokuSebenza

1. X-ray Diffraction Foundation

I-X-rays isebenzisana ne-nuclei ye-athomu kunye nee-electron kwi-crystal lattice, ivelisa iipateni zokuphazamiseka. Umthetho kaBragg (nλ = 2d sinθ) ulawula unxulumano phakathi kwee-engile ze-diffraction (θ) kunye nesithuba se-lattice (d).
Ii-detectors zibamba ezi patheni, ezihlalutywayo ukuze kwakhiwe ngokutsha ubume becrystallographic.

2. Itekhnoloji yokuskena ye-Omega

Ikristale ijikeleza ngokuqhubekayo malunga ne-axis esisigxina ngelixa i-X-reyi iyikhanyisa.
Abachongi baqokelela imiqondiso ye-diffraction kwiinqwelomoya ezininzi zecrystallographic, zivumela ukuzimisela kokuma kwe-lattice epheleleyo kwimizuzwana emi-5.

3. Uhlalutyo lwe-Rocking Curve

I-angle ye-crystal elungisiweyo kunye nee-engile ze-X-reyi ezihlukeneyo zokulinganisa ububanzi be-peak (FWHM), ukuvavanya iziphene ze-lattice kunye noxinzelelo.

4. Ulawulo oluzenzekelayo

I-PLC kunye ne-touchscreen interfaces yenza i-engile yokusika i-preset, impendulo yexesha langempela, kunye nokudibanisa kunye noomatshini bokusika kulawulo oluvaliweyo.

Izinto eziluncedo kunye neempawu

1. Ukuchaneka kunye nokusebenza ngokufanelekileyo

Ukuchaneka kwe-angular ± 0.001 °, isisombululo sokufumanisa isiphene <30 arcseconds.
Isantya sokuskena se-Omega si-200 × ngokukhawuleza kuneskeni se-Theta yesintu.

2. I-Modularity kunye ne-Scalability

Zinokwandiswa kwizicelo ezikhethekileyo (umzekelo, ii-wafers ze-SiC, iiblade zeinjini yomoya).
Idibanisa neenkqubo ze-MES zokubeka iliso kwimveliso yexesha lokwenyani.

3. Ukuhambelana kunye nokuzinza

Ithatha iisampulu ezinemilo engaqhelekanga (umzekelo, iingothi zesafire eziqhekekileyo).
Uyilo olupholileyo lomoya lunciphisa iimfuno zokugcina.

4. Ukusebenza ngobukrelekrele

Ukucofa-kanye ukulinganisa kunye nokusetyenzwa kwemisebenzi emininzi.
Ukulinganisa okuzenzekelayo ngeekristale zokubhekisela ukunciphisa impazamo yomntu.

Usetyenziso

1. Ukwenziwa kweSemiconductor

I-Wafer dicing orientation: Imisela iSi, iSiC, i-GaN wafer orientation for optimized cut performance.
Imephu eneziphene: Ichonga imikrwelo yomphezulu okanye ukususwa kwindawo yokuphucula isivuno setshiphu.

2. Izinto ezibonwayo

Iikristale ezingabonakaliyo (umzekelo, i-LBO, i-BBO) yezixhobo ze-laser.
Isalathiso somphezulu weSapphire sokumakishwa kwe substrates ze-LED.

3. IiCeramics kunye neeComposites

Ihlalutya i-grain orientation kwi-Si3N4 kunye ne-ZrO2 yezicelo eziphezulu zokushisa.

4. UPhando kunye noLawulo loMgangatho

Iidyunivesithi/ielebhu zophuhliso lwemathiriyeli yenoveli (umzekelo, iialloyi ezine-entropy ephezulu).
I-QC yoshishino ukuqinisekisa ukuhambelana kwebhetshi.

Iinkonzo ze-XKH

I-XKH inikezela ngenkxaso yobuchwephesha bomjikelo wobomi kwizixhobo zokuqhelaniswa newafer, kubandakanywa ukufakela, inkqubo yokwenziwa kweparamitha, uhlalutyo lwejiko lokugungqa, kunye nemephu yesiphene somphezulu we-3D. Izisombululo ezilungelelanisiweyo (umzekelo, iteknoloji yokupakishwa kwe-ingot) zibonelelwa ukuphucula i-semiconductor kunye nemveliso yemathiriyeli ebonakalayo ngaphezulu kwe-30%. Iqela elizinikeleyo liqhuba uqeqesho lwendawo, ngelixa i-24/7 inkxaso ekude kunye nokutshintshwa ngokukhawuleza kwe-spare part iqinisekisa ukuthembeka kwezixhobo.

Ngaphambili: I-SiC Ceramic Tray ye-Wafer Carrier enokumelana nobushushu obuphezulu

Okulandelayo: Izinto zeSapphire ezikrwada eziMthubi-Yenzelwe uVeliso lwezacholo