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Inkqubo yoQondiso lweWafer yokulinganisa uQondiso lweCrystal

Inkqubo Yokujolisa I-Wafer Yokulinganisa Ukujolisa Kwekristale Umfanekiso Ocacileyo
  • Inkqubo yoQondiso lweWafer yokulinganisa uQondiso lweCrystal
  • Inkqubo yoQondiso lweWafer yokulinganisa uQondiso lweCrystal
  • Inkqubo yoQondiso lweWafer yokulinganisa uQondiso lweCrystal
  • Inkqubo yoQondiso lweWafer yokulinganisa uQondiso lweCrystal

Inkcazo emfutshane:

Isixhobo sokujolisa i-wafer sisixhobo esichanekileyo kakhulu esisebenzisa imigaqo ye-X-ray diffraction ukuphucula ukwenziwa kwe-semiconductor kunye neenkqubo zesayensi yezinto ngokuchonga ukujolisa kwe-crystallographic. Izinto eziphambili ziquka umthombo we-X-ray (umz., i-Cu-Kα, ubude be-0.154 nm), i-goniometer echanekileyo (isisombululo se-angular ≤0.001°), kunye nee-detectors (ii-CCD okanye ii-scintillation counters). Ngokujikelezisa iisampuli kunye nokuhlalutya iipateni ze-diffraction, ibala i-crystallographic indices (umz., 100, 111) kunye nesithuba se-lattice nge-±30 arcsecond accuracy. Inkqubo ixhasa imisebenzi ezenzekelayo, ukulungiswa kwe-vacuum, kunye nokujikeleza kwe-multi-axis, ehambelana nee-wafers ze-2-8-intshi zokulinganisa ngokukhawuleza imiphetho ye-wafer, ii-reference planes, kunye nokulungelelaniswa kwe-epitaxial layer. Izicelo eziphambili ziquka i-cutting-oriented silicon carbide, ii-sapphire wafers, kunye ne-turbine blade high-temperature validation, ukuphucula ngokuthe ngqo iipropati zombane ze-chip kunye ne-yield.


Iimbonakalo

Intshayelelo yezixhobo

Izixhobo zokujolisa i-wafer zizixhobo ezichanekileyo ezisekelwe kwimigaqo ye-X-ray diffraction (XRD), ezisetyenziswa kakhulu kwimveliso ye-semiconductor, izinto ezibonakalayo, iiseramikhi, kunye nezinye izinto zekristale.

Ezi zixhobo zimisela indlela yokujonga i-crystal lattice kwaye zikhokela iinkqubo zokusika okanye zokupolisha ezichanekileyo. Iimpawu eziphambili ziquka:

  • Imilinganiselo echanekileyo kakhulu:Iyakwazi ukusombulula iiplane zekristalegrafi ezinee-angle resolutions ezisezantsi ukuya kwi-0.001°.
  • Ukuhambelana okukhulu kwesampulu:Ixhasa ii-wafers ezifikelela kwi-450 mm ububanzi kunye nobunzima obuyi-30 kg, zilungele izinto ezifana ne-silicon carbide (SiC), i-sapphire, kunye ne-silicon (Si).
  • Uyilo lweModular:Imisebenzi enokwandiswa ibandakanya uhlalutyo lwe-rocking curve, imephu yeziphene zomphezulu we-3D, kunye nezixhobo zokubeka izinto ezininzi ukuze kusetyenzwe ngeesampulu ezininzi.

Iiparameters zobuGcisa eziPhambili​

Udidi lweParamitha

Amaxabiso/Uqwalaselo oluQhelekileyo

Umthombo we-X-ray

I-Cu-Kα (indawo yokugxila ye-0.4×1 mm), i-voltage ekhawulezayo ye-30 kV, i-0–5 mA current tube ehlengahlengiswayo

Uluhlu lwe-Angular

θ: -10° ukuya ku +50°; 2θ: -10° ukuya ku +100°

Ukuchaneka​

Isisombululo se-engile yokuthambeka: 0.001°, ukufunyanwa kwesiphene somphezulu: ±30 arcseconds (ijika elijikayo)

Isantya sokuskena

I-Omega scan igqibezela ulwalathiso olupheleleyo lwe-lattice kwimizuzwana emi-5; I-Theta scan ithatha umzuzu omnye

Isigaba seSampulu

I-V-groove, i-pneumatic suction, i-multi-angle rotation, iyahambelana nee-wafers eziyi-2–8 intshi

Imisebenzi Eyongeziweyo

Uhlalutyo lwe-Rocking curve, imephu ye-3D, isixhobo sokudibanisa, ukufunyanwa kweziphene ezibonakalayo (ukukrweleka, ii-GB)

Umgaqo Wokusebenza​

1. Isiseko seDiffraction ye-X-ray​

  • Ii-X-reyi zisebenzisana nee-atomic nuclei kunye nee-electron kwi-crystal lattice, zivelisa iipateni ze-diffraction. UMthetho kaBragg (nλ = 2d sinθ​​) ulawula ubudlelwane phakathi kwee-angles ze-diffraction (θ) kunye ne-lattice space (d).
    Ii-detectors zibamba ezi patheni, ezihlalutywayo ukuze kwakhiwe kwakhona isakhiwo se-crystallographic.

2. Itekhnoloji yokuSkena ye-Omega

  • Ikristale ijikeleza ngokuqhubekayo ijikeleze i-axis esisigxina ngelixa ii-X-ray ziyikhanyisa.
  • Ii-detectors ziqokelela imiqondiso ye-diffraction kwiiplane ezininzi ze-crystallographic, zivumela ukuqinisekiswa kolwalathiso olupheleleyo lwe-lattice kwimizuzwana emi-5.

3. Uhlalutyo lweRocking Curve

  • I-engile yekristale ezinzileyo ene-engile ezahlukeneyo ze-X-ray zokulinganisa ububanzi bencochoyi (FWHM), ukuvavanya iziphene ze-lattice kunye noxinzelelo.

4. Ulawulo Oluzenzekelayo​

  • Ii-PLC kunye nee-interfaces zesikrini sokuchukumisa zivumela ii-engile zokusika ezicwangcisiweyo, impendulo yexesha langempela, kunye nokudibanisa noomatshini bokusika ukuze kulawulwe i-closed-loop.

Isixhobo sokuQhelanisa iWafer 7

Iingenelo kunye neempawu​

1. Ukuchaneka nokusebenza kakuhle​

  • Ukuchaneka kwe-angular ± 0.001°, isisombululo sokuchongwa kweziphene <30 arcseconds.
  • Isantya se-Omega scan sikhawuleza ngama-200× kune-Theta scans zemveli.

2. Ukuguquguquka kunye nokukhula

  • Iyandiswa kwizicelo ezikhethekileyo (umz., ii-SiC wafers, ii-turbine blades).
  • Idibana neenkqubo ze-MES ukuze kujongwe imveliso ngexesha langempela.

3. Ukuhambelana kunye nozinzo​

  • Ingamkela iisampulu ezimile ngendlela engaqhelekanga (umz., ii-ingots zesafire eziqhekekileyo).
  • Uyilo olupholiswe ngumoya lunciphisa iimfuno zokugcinwa.

4. Ukusebenza koBukrelekrele

  • Ukulinganisa ngokucofa kanye kunye nokucutshungulwa kwemisebenzi emininzi.
  • Ukulinganisa ngokuzenzekelayo ngeekristale zesalathiso ukunciphisa iimpazamo zomntu.

Isixhobo sokuQhelanisa iWafer 5-5

Izicelo

1. Ukwenziwa kweeSemiconductor​

  • Ukujongwa kwe-wafer dicing: Kumisela ukujongwa kwe-Si, SiC, GaN wafer ukuze kube lula ukusika.
  • Imephu echanekileyo: Ichonga imikrwelo okanye ukukhubeka komphezulu ukuze kuphuculwe ukuvela kweetshiphusi.

2. Izixhobo zokukhanya

  • Iikristale ezingezizo ezithe ngqo (umz., i-LBO, i-BBO) zezixhobo zelaser.
  • Uphawu lokujonga umphezulu wesafire wafer kwii-substrates ze-LED.

3. Iiseramikhi kunye neeComposites

  • Ihlalutya ukujongwa kweenkozo kwiSi3N4 kunye neZrO2 ukuze kusetyenziswe ubushushu obuphezulu.

4. Uphando kunye noLawulo loMgangatho​

  • Iiyunivesithi/iilabhoratri zophuhliso lwezinto ezintsha (umz., ii-alloys ezine-entropy ephezulu).
  • I-QC yoShishino ukuqinisekisa ukuhambelana kwebhetshi.

Iinkonzo ze-XKH

I-XKH inikezela ngenkxaso yobugcisa ebanzi yomjikelo wobomi kwizixhobo zokujongwa kwe-wafer, kubandakanya ukufakwa, ukulungiswa kweparameter yenkqubo, uhlalutyo lwe-rocking curve, kunye ne-3D surface defect mapping. Izisombululo ezilungiselelwe wena (umz., iteknoloji ye-ingot stacking) zibonelelwa ukuphucula ukusebenza kakuhle kwemveliso ye-semiconductor kunye ne-optical material ngaphezulu kwe-30%. Iqela elizinikeleyo liqhuba uqeqesho kwindawo, ngelixa inkxaso ekude iiyure ezingama-24 ngosuku kunye nokutshintshwa kwezixhobo ezisele ngokukhawuleza kuqinisekisa ukuthembeka kwezixhobo.

  • Ngaphambili:
  • Okulandelayo:

    • Iimveliso eziNxulumeneyo

    Bhala umyalezo wakho apha uze uwuthumele kuthi
    Cofa u-enter ukuze uphendle okanye ucofe u-ESC ukuze uvale