ISubstrate
-
I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu welaser wavelength 940nm indawo enye
-
2inch 3inch 4inch InP epitaxial wafer substrate APD isitofu sokukhanya sonxibelelwano lwefiber optic okanye iLiDAR
-
Iringi yesafire eyenziwe ngezinto ezenziwe ngesafire Ubunzima obungafihliyo kunye nokwenza ngokwezifiso iMohs ye9
-
Iringi yesafire yonke-isafire eyenziwe ngokupheleleyo ukusuka kwisafire Ukungafihli nto ilebhu eyenziwe ngezinto zesafire
-
ISapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% iCrystal enye
-
ISapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
-
SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
-
ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso
-
6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy
-
SiC Ingot 4H uhlobo Dia 4inch 6inch Ukutyeba 5-10mm Uphando / Dummy Grade
-
6inch isafire Boule isafire blank enye crystal Al2O3 99.999%
-
I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha