Inxalenye engaphantsi
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6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy
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SiC Ingot 4H uhlobo Dia 4inch 6inch Ukutyeba 5-10mm Uphando / Dummy Grade
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6inch isafire Boule isafire blank enye crystal Al2O3 99.999%
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I-Sic Substrate yeSilicon Carbide Wafer 4H-N Uhlobo oluPhezulu loBulukhuni bokuRhakala Ukuchasa iBanga lokupholisha
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2inch Silicon Carbide Wafer 6H-N Uhlobo lwePrime iBanga loPhando IBanga leDummy iBanga 330μm 430μm Ukutyeba
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I-2inch ye-silicon carbide substrate 6H-N enamacala amabini akhazimlisiweyo ububanzi 50.8mm ibakala lophando lwemveliso
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p-uhlobo 4H/6H-P 3C-N UHLOBO I-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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I-substrate ye-SiC P-uhlobo lwe-4H/6H-P 3C-N 4inch enobukhulu obungama-350um ibakala leMveliso yodidi lweDummy
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4H/6H-P 6inch SiC wafer Zero MPD ibakala Production IBanga leDummy
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I-P-uhlobo lwe-SiC wafer 4H/6H-P 3C-N 6inch ukutyeba 350 μm kunye nokuqhelaniswa neFlethi ePrayimari
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Inkqubo ye-TVG kwi-quartz sapphire BF33 wafer Iglasi ye-wafer yokubetha
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Ikristale enye yeSilicon wafer Si Substrate Uhlobo N/P Optional Silicon Carbide Wafer