I-substrate

I-InSb wafer eyi-2 intshi eyi-3 intshi engafakwanga i-Ntype P yohlobo lwe-111 100 yee-Infrared Detectors
Iiwafers ze-Indium Antimonide (InSb) Uhlobo lwe-N Uhlobo lwe-P I-Epi ilungile ingafakwanga Iiwafers ezifakwe idophi okanye i-Ge ezifakwe idophi I-2inch 3inch 4inch ubukhulu Iiwafers ze-Indium Antimonide (InSb)
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
I-sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela enokulungiselelwa
I-substrate ye-carbide ye-Sic silicon eyi-intshi ezi-2 6H-N Uhlobo lwe-0.33mm 0.43mm yokupholisha emacaleni amabini Ukuqhuba okuphezulu kobushushu Ukusetyenziswa kwamandla aphantsi
I-GaAs enamandla aphezulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwe-laser
I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL vertical cavity surface emission laser wavelength 940nm single junction
Isixhobo sokukhanyisa i-APD esizi-2 intshi ezingama-3 intshi ezingama-4 intshi se-InP epitaxial wafer substrate sokunxibelelana nge-fiber optic okanye i-LiDAR
Indandatho yesafire eyenziwe ngezinto zesafire ezenziwe ngokwenziwa
Indandatho yesafire eyi-all-saphire ring yenziwe ngokupheleleyo ngesafire Izinto zesafire ezenziwe ngelabhoratri ezicacileyo
I-Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
Ilensi yeSapphire Prism Sapphire ecacileyo kakhulu i-Al2O3 BK7 JGS1 JGS2 Material Optical Instrument

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