Isixhobo sokukhanyisa i-APD esizi-2 intshi ezingama-3 intshi ezingama-4 intshi se-InP epitaxial wafer substrate sokunxibelelana nge-fiber optic okanye i-LiDAR

Inkcazo emfutshane:

I-InP epitaxial substrate sisixhobo esisisiseko sokwenza i-APD, ngokuqhelekileyo iyinto ye-semiconductor ebekwe kwi-substrate ngetekhnoloji yokukhula kwe-epitaxial. Izinto ezisetyenziswa rhoqo ziquka i-silicon (Si), i-gallium arsenide (GaAs), i-gallium nitride (GaN), njl., eneempawu ezintle ze-photoelectric. I-APD photodetector luhlobo olukhethekileyo lwe-photodetector olusebenzisa i-avalanche photoelectric effect ukuphucula isignali yokubona. Xa ii-photons zisenzeka kwi-APD, ii-electron-hole pairs ziyaveliswa. Ukukhawuleziswa kwezi zithuthi phantsi kwesenzo sentsimi yombane kunokukhokelela ekwakhiweni kwezi zithuthi zininzi, "i-avalanche effect", eyandisa kakhulu i-output current.
Ii-wafers ze-Epitaxial ezikhuliswe yi-MOCvD zezona zinto ziphambili kwizicelo ze-avalanche photodetection diode. Umaleko wokufunxa ulungiswe ngezinto ze-U-InGaAs ezine-background doping <5E14. Umaleko osebenzayo ungasebenzisa i-InP okanye i-InAlAslayer. I-InP epitaxial substrate zizinto ezisisiseko zokwenza i-APD, emisela ukusebenza kwe-optical detector. I-APD photodetector luhlobo lwe-photodetector enovakalelo oluphezulu, esetyenziswa kakhulu kwiindawo zonxibelelwano, zokubona kunye nemifanekiso.

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Iimbonakalo

Iimpawu eziphambili zephepha le-InP laser epitaxial ziquka

1. Iimpawu ze-band gap: I-InP ine-band gap encinci, efanelekileyo ekufumaneni ukukhanya kwe-infrared kwamaza amade, ingakumbi kuluhlu lwamaza ukusuka kwi-1.3μm ukuya kwi-1.5μm.
2. Ukusebenza kakuhle kwe-Optical: Ifilimu ye-InP epitaxial ine-optical esebenzayo kakuhle, njengamandla okukhanya kunye nokusebenza kakuhle kwe-quantum yangaphandle kwii-wavelengths ezahlukeneyo. Umzekelo, kwi-480 nm, amandla okukhanya kunye nokusebenza kakuhle kwe-quantum yangaphandle yi-11.2% kunye ne-98.8%, ngokulandelelana.
3. I-Carrier Dynamics: Ii-InP nanoparticles (NPs) zibonisa ukuziphatha kokubola okuphindwe kabini ngexesha lokukhula kwe-epitaxial. Ixesha lokubola ngokukhawuleza libangelwa kukufakwa kwe-carrier kwi-InGaAs layer, ngelixa ixesha lokubola kancinci linxulumene nokuhlanganiswa kwe-carrier kwi-InP NPs.
4. Iimpawu zobushushu obuphezulu: Izinto ze-AlGaInAs/InP quantum well zisebenza kakuhle kakhulu kubushushu obuphezulu, nto leyo enokuthintela ngokufanelekileyo ukuvuza komsinga kwaye iphucule iimpawu zobushushu obuphezulu be-laser.
5. Inkqubo yokuvelisa: Amaphepha e-InP epitaxial adla ngokukhuliswa kwi-substrate ngetekhnoloji ye-molecular beam epitaxy (MBE) okanye itekhnoloji ye-metal-organic chemical vapor deposition (MOCVD) ukuze kufunyanwe iifilimu ezikumgangatho ophezulu.
Ezi mpawu zenza ukuba ii-InP laser epitaxial wafers zibe nezicelo ezibalulekileyo kunxibelelwano lwe-optical fiber, ukusasazwa kwe-quantum key kunye nokufunyanwa kwe-remote optical.

Iintlobo eziphambili zezicelo zeethebhulethi ze-InP laser epitaxial ziquka

1. Iifotoniki: Iilaser ze-InP kunye nee-detectors zisetyenziswa kakhulu kunxibelelwano lwe-optical, kwiziko ledatha, kwimifanekiso ye-infrared, kwi-biometrics, kwi-3D sensing kunye nakwi-LiDAR.

2. Unxibelelwano: Izixhobo ze-InP zibalulekile ekuhlanganisweni okukhulu kwee-laser ze-long-wave length ezisekelwe kwi-silicon, ingakumbi kunxibelelwano lwe-optical fiber.

3. Iilaser ze-Infrared: Ukusetyenziswa kweelaser ze-quantum well ezisekelwe kwi-InP kwi-mid-infrared band (ezifana ne-4-38 microns), kubandakanya ukuva igesi, ukufunyanwa kwezinto eziqhumayo kunye nemifanekiso ye-infrared.

4. I-Silicon photonics: Ngokusebenzisa itekhnoloji yokudibanisa eyahlukileyo, i-InP laser idluliselwa kwi-substrate esekelwe kwi-silicon ukuze yenze iqonga lokudibanisa le-silicon optoelectronic elisebenza ngemisebenzi emininzi.

5. Iilaser ezisebenza kakuhle: Izixhobo ze-InP zisetyenziselwa ukuvelisa iilaser ezisebenza kakuhle, ezifana neelaser ze-InGaAsP-InP transistor ezinobude obuyi-1.5 microns.

I-XKH inikezela ngee-wafers ze-InP epitaxial ezenzelwe wena ezinezakhiwo ezahlukeneyo kunye nobukhulu, ezigubungela usetyenziso olwahlukeneyo olufana nonxibelelwano lwe-optical, ii-sensors, izikhululo zesiseko ze-4G/5G, njl. Iimveliso ze-XKH zenziwe kusetyenziswa izixhobo ze-MOCVD eziphambili ukuqinisekisa ukusebenza okuphezulu kunye nokuthembeka. Ngokuphathelele uthutho, i-XKH ineendlela ezahlukeneyo zemithombo yamazwe ngamazwe, inokusingatha ngokulula inani lee-odolo, kwaye ibonelele ngeenkonzo ezongeziweyo ezifana nokunciphisa, ukuhlukaniswa, njl. Iinkqubo zokuhambisa ezisebenzayo ziqinisekisa ukuhanjiswa ngexesha elifanelekileyo kwaye zihlangabezana neemfuno zabathengi zomgangatho kunye namaxesha okuhanjiswa. Emva kokufika, abathengi banokufumana inkxaso yobugcisa epheleleyo kunye nenkonzo yasemva kokuthengisa ukuqinisekisa ukuba imveliso isetyenziswa kakuhle.