Inxalenye engaphantsi
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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I-intshi ezi-3 zoBusulungekileyo obuPhezulu (Abungatshitshiswanga) ISilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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isafire dia single crystal,ubunzima obuphezulu morhs 9 umkrwelo ukumelana ngokwezifiso
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Ipatheni yeSapphire Substrate PSS 2inch 4inch 6inch ICP eyomileyo etching ingasetyenziselwa chips LED
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2 intshi 4 intshi 6 intshi enePattered Sapphire Substrate (PSS) ekukhuliswe kuyo imathiriyeli yeGaN enokusetyenziswa kwizibane zeLED
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Iwafer eqatywe iAu, isafire, isilicon, iSiC, 2inch 4inch 6inch, ukutyeba kwegolide 10nm 50nm 100nm
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ipleyiti yegolide yesilicone wafer (Si Wafer) 10nm 50nm 100nm 500nm Au Ukuqhuba okugqwesileyo kwe-LED
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IiWafers zeSilicon ezityatyekwe ngeGolide 2inch 4inch 6inch ubukhulu bomaleko weGolide: 50nm (± 5nm) okanye wenze ngokwezifiso ifilimu yoKugquma iAu, 99.999% ubunyulu
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I-AlN-on-NPSS Wafer: I-Aluminiyam ye-Nitride eSebenza ngokuPhezulu yoMsebenzi kwiSubstrate yeSapphire engaguquguqukiyo kubushushu obuphezulu, amandla amakhulu, kunye nezicelo zeRF
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I-AlN kwi-FSS 2inch 4inch NPSS/FSS AlN template yendawo yesemiconductor
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IGallium Nitride (GaN) Epitaxial Ikhuliswe kwiSapphire Wafers 4inch 6inch yeMEMS