Inxalenye engaphantsi
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SiC Substrate SiC Epi-wafer conductive / uhlobo semi 4 6 8 intshi
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I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene
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4H-N Uhlobo lweSiC Epitaxial Wafer High Voltage High Frequency
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I-8inch LNOI (LiNbO3 kwi-Insulator) iWafer ye-Optical Modulators ii-Waveguides iiSekethe eziDityanisiweyo
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I-LNOI Wafer (i-Lithium Niobate kwi-Insulator) kuNxibelelwano ngoNxibelelwano oluva i-Electro-Optic ephezulu
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I-intshi ezi-3 zoKucoceka okuPhezulu (Akungatshitshiswanga) iSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer iSilicon Carbide iDummy yoPhando ibakala 500um ubukhulu
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isafire dia single crystal,ubunzima obuphezulu morhs 9 umkrwelo ukumelana ngokwezifiso
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Ipatheni yeSapphire Substrate PSS 2inch 4inch 6inch ICP eyomileyo etching ingasetyenziselwa chips LED
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2 intshi 4 intshi 6 intshi enePattered Sapphire Substrate (PSS) ekukhuliswe kuyo imathiriyeli yeGaN enokusetyenziswa kwizibane zeLED
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4H-N/6H-N SiC Wafer Reasearch imveliso Dummy grade Dia150mm Silicon carbide substrate
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Iwafer eqatywe iAu, isafire, isilicon, iSiC, 2inch 4inch 6inch, ukutyeba kwegolide 10nm 50nm 100nm