I-substrate
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I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
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Izixhobo zoLawulo loBushushu oluDiamond-Copper Composite
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I-HPSI SiC Wafer ≥90% Udidi lwe-Transmittance Optical kwiiglasi ze-AI/AR
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I-Silicon Carbide (SiC) Substrate Ecocekileyo Kakhulu Yeeglasi ze-Ar
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IiWafers ze-4H-SiC Epitaxial ze-Ultra-High Voltage MOSFETs (100–500 μm, 6 intshi)
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I-SICOI (iSilicon Carbide kwi-Insulator) IiWafers zeSiC Film kwiSilicon
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I-Sapphire Wafer engenanto ecocekileyo kakhulu, i-Raw Sapphire Substrate yokuSebenza
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Ikristale yembewu yesikwere yeSapphire – Isiseko esijolise ngokuchanekileyo sokuKhula kweSapphire yokwenziwa
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I-Silicon Carbide (SiC) I-Surstrate yeCristal enye – 10×10mm I-Wafer
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I-wafer ye-HPSI SiC ye-4H-N 6H-N 3C-N I-wafer ye-SiC Epitaxial ye-MOS okanye ye-SBD
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I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene
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Uhlobo lwe-4H-N SiC Epitaxial Wafer High Voltage High Frequency