Silicon Dioxide wafer SiO2 wafer etyebileyo egudisiweyo, Prime kunye neBanga loVavanyo

ISilicon Dioxide wafer SiO2 wafer eshinyeneyo ekhazimlisiweyo, iPrime kunye noVavanyo lweBanga loMfanekiso oFakelweyo

Inkcazelo emfutshane:

I-oxidation ye-thermal yiphumo lokubonisa i-silicon wafer kwindibaniselwano ye-oxidizing agents kunye nokushisa ukwenza umaleko we-silicon dioxide (SiO2) .Inkampani yethu inokwenza ngokwezifiso i-silicon dioxide oxide flakes kunye neeparitha ezahlukeneyo kubathengi, ezinomgangatho obalaseleyo; ubukhulu be-oxide, ukubumbana, ukufana kunye nokuqhelaniswa kwekristale okuxhathisa zonke ziphunyezwe ngokuhambelana nemigangatho yelizwe.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukwazisa ngebhokisi ye-wafer

Imveliso	Iziphaluka ze-Thermal oxide (Si+SiO2).
Indlela yokuvelisa	I-LPCVD
Ukuguquguquka komphezulu	SSP/DSP
Ububanzi	2inch/3inch/4inch/5inch/6inch
Uhlobo	Uhlobo lwe-P / N uhlobo
Ukutyeba kweLayer ye-Oxidation	100nm ~1000nm
Ukuqhelaniswa	<100> <111>
Ukumelana nombane	0.001-25000(Ω•cm)
Isicelo	Isetyenziselwa i-synchrotron radiation carrier carrier, i-PVD/CVD yokugquma njenge-substrate, isampuli yokukhula ye-magnetron sputtering, i-XRD, i-SEM,Amandla e-atom, i-infrared spectroscopy, i-fluorescence spectroscopy kunye nezinye iisubstrates zokuvavanya uhlalutyo, i-molecular beam epitaxial substrates yokukhula, uhlalutyo lwe-X-ray yee-crystalline semiconductors.

I-Silicon oxide wafers ziifilimu ze-silicon dioxide ezikhule kumphezulu we-silicon wafers ngokusebenzisa i-oxygen okanye umphunga wamanzi kumaqondo aphezulu (800 ° C ~ 1150 ° C) usebenzisa inkqubo ye-oxidation ye-thermal kunye ne-atmospheric pressure furnace tool. Ubukhulu benkqubo buvela kwi-nanometers ezingama-50 ukuya kwi-microns ezi-2, ubushushu benkqubo bufikelela kwi-1100 degrees Celsius, indlela yokukhula yahlulwe ibe "i-oksijini emanzi" kunye "ne-oksijini eyomileyo" iindidi ezimbini. I-Thermal Oxide ngumaleko weoksidi "okhulileyo", onokulingana okuphezulu, ukuxinana okungcono kunye namandla aphezulu e-dielectric kune-CVD efakwe iileyidi zeoksidi, ezikhokelela kumgangatho ophezulu.

I-Oxygen Oxidation eyomileyo

I-silicon iphendula kunye ne-oksijini kwaye i-oxide layer iqhubela phambili kwi-substrate layer. I-oxidation eyomileyo kufuneka yenziwe kumaqondo okushisa ukusuka kwi-850 ukuya kwi-1200 ° C, kunye namazinga aphantsi okukhula, kwaye ingasetyenziselwa ukukhula kwesango le-MOS insulated. I-oxidation eyomileyo ikhethwa ngaphezu kwe-oxidation emanzi xa umgangatho ophezulu, i-ultra-thin silicon oxide layer ifuneka. Umthamo we-oxidation owomileyo: 15nm ~ 300nm.

2. I-Oxidation emanzi

Le ndlela isebenzisa umphunga wamanzi ukwenza umaleko we-oxide ngokufaka ityhubhu yesithando somlilo phantsi kweemeko eziphezulu zokushisa. Uxinaniso lwe-oxidation ye-oksijeni emanzi mbi kancinane kune-oxidation ye-oksijeni eyomileyo, kodwa xa kuthelekiswa ne-oxidation ye-oksijini eyomileyo inzuzo yayo kukuba inezinga eliphezulu lokukhula, elifanele ngaphezu kwe-500nm yokukhula kwefilimu. Umthamo we-oxidation omanzi: 500nm ~ 2µm.

I-AEMD ye-atmospheric pressure oxidation furnace tube yi-tube yesithando somlilo saseCzech, ebonakaliswe ngokuzinza okuphezulu kwenkqubo, ukufana okuhle kwefilimu kunye nokulawula i-particle ephezulu. I-silicon oxide furnace ityhubhu inokusebenza ukuya kuthi ga kwi-50 wafers ngetyhubhu nganye, kunye nokufana okugqwesileyo kwe-intra- kunye ne-inter-wafers.