I-silicon dioxide wafer ye-SiO2 etyebileyo, ekhazimlisiweyo, i-Prime kunye ne-Test Grade
Yazisa ngebhokisi ye-wafer
| Imveliso | Iiwafer zeThermal Oxide (Si+SiO2) |
| Indlela yoMveliso | I-LPCVD |
| Ukupolisha umphezulu | I-SSP/DSP |
| Ububanzi | 2intshi / 3intshi / 4intshi / 5intshi / 6intshi |
| Uhlobo | Uhlobo lwe-P / Uhlobo lwe-N |
| Ubukhulu be-Oxidation Layer | 100nm ~ 1000nm |
| Ukuqhelaniswa | <100> <111> |
| Ukumelana nombane | 0.001-25000(Ω•cm) |
| Isicelo | Isetyenziselwa ukuthwala isampuli yemitha ye-synchrotron, i-PVD/CVD coating njenge-substrate, isampuli yokukhula kwe-magnetron sputtering, i-XRD, i-SEM,Amandla e-athomu, i-infrared spectroscopy, i-fluorescence spectroscopy kunye nezinye ii-substrates zovavanyo lohlalutyo, ii-substrates zokukhula kwe-epitaxial ye-molecular beam, uhlalutyo lwe-X-ray lwee-semiconductors ze-crystalline |
Ii-wafer ze-silicon oxide ziifilimu ze-silicon dioxide ezikhuliswe phezu kwee-wafer ze-silicon ngokusebenzisa i-oksijini okanye umphunga wamanzi kumaqondo obushushu aphezulu (800°C ~ 1150°C) kusetyenziswa inkqubo ye-thermal oxidation enezixhobo ze-atmospheric pressure furnace tube. Ubukhulu benkqubo buqala kwii-nanometers ezingama-50 ukuya kwi-2 microns, ubushushu benkqubo bufikelela kwi-1100 degrees Celsius, indlela yokukhula yahlulwe yaba ziintlobo ezimbini "ze-oxygen emanzi" kunye "ne-oxygen eyomileyo". I-Thermal Oxide lulwahlulo lwe-oxide "olukhulileyo", olune-uniformity ephezulu, i-density engcono kunye namandla aphezulu e-dielectric kunee-CVD deposited oxide layers, nto leyo ebangela umgangatho ophezulu.
Uxinzelelo lweOksijini eyomileyo
I-Silicon isabela kwi-oxygen kwaye umaleko we-oxide uhlala usiya kumaleko we-substrate. I-oxidation eyomileyo kufuneka yenziwe kumaqondo obushushu ukusuka kwi-850 ukuya kwi-1200°C, kunye namazinga okukhula aphantsi, kwaye ingasetyenziselwa ukukhula kwesango eligqunywe yi-MOS. I-oxidation eyomileyo ikhethwa kune-oxidation emanzi xa kufuneka umaleko we-silicon oxide osemgangathweni ophezulu, obhityileyo kakhulu. Umthamo we-oxidation eyomileyo: 15nm ~ 300nm.
2. Ukukhupha i-Oxidation emanzi
Le ndlela isebenzisa umphunga wamanzi ukwenza umaleko we-oxide ngokungena kwityhubhu yesithando phantsi kweemeko zobushushu obuphezulu. Uxinano lwe-oxidation ye-oxygen emanzi lubi kancinci kune-oxidation ye-oxygen eyomileyo, kodwa xa ithelekiswa ne-oxidation ye-oxygen eyomileyo inzuzo yayo kukuba inesantya esiphezulu sokukhula, esifanelekileyo ukukhula kwefilimu engaphezulu kwe-500nm. Umthamo we-oxidation emanzi: 500nm~2µm.
Ityhubhu ye-oxidation furnace ye-AEMD yoxinzelelo lomoya yityhubhu ye-Czech ethe tyaba ye-furnace, ebonakaliswa kukuzinza okuphezulu kwenkqubo, ukufana okuhle kwefilimu kunye nolawulo oluphezulu lwamasuntswana. Ityhubhu ye-silicon oxide furnace inokucubungula ukuya kuthi ga kwii-wafers ezingama-50 ngetyhubhu nganye, kunye nokufana okuhle kakhulu ngaphakathi nangaphakathi kwee-wafers.
Umzobo oneenkcukacha
