Umatshini wokusika we-Silicon carbide diamond wire 4/6/8/12 inch SiC ingot processing

Inkcazelo emfutshane:

Umatshini wokusika we-Silicon Carbide Diamond Wire luhlobo lwezixhobo ezichanekileyo zokulungiswa kwe-silicon carbide (SiC) ingot slice, usebenzisa iteknoloji ye-Diamond Wire Saw, nge-high-speed ye-diamond wire ehambayo (umgca we-diamond 0.1 ~ 0.3mm) ukuya kwi-SiC ingot yokusika i-multi-wire, ukufezekisa ukuchaneka okuphezulu, ukulungiswa kwe-wafer ephantsi yomonakalo. Isixhobo sisetyenziswa ngokubanzi kwi-SiC power semiconductor (MOSFET/SBD), isixhobo serediyo frequency (GaN-on-SiC) kunye ne-optoelectronic device substrate processing, sisixhobo esiphambili kwikhonkco leshishini le-SiC.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgaqo wokuSebenza:

1. Ukulungiswa kwe-ingot: i-SiC ingot (4H / 6H-SiC) igxininiswe kwiqonga lokusika ngokusebenzisa i-fixture ukuqinisekisa ukuchaneka kwendawo (± 0.02mm).

2. Intshukumo yomgca wedayimane: umgca wedayimane (i-diamond particles e-electroplated phezu komhlaba) iqhutywa yinkqubo yevili lesikhokelo kwi-high-speed circulation (isantya somgca 10 ~ 30m / s).

3. Isondlo sokusika: i-ingot iyondliwa ecaleni kwendlela ebekiweyo, kwaye umgca wedayimane unqunywe ngaxeshanye kunye nemigca emininzi ehambelanayo (imigca eyi-100 ~ 500) ukwenza ama-wafers amaninzi.

4. Ukupholisa kunye nokususwa kwe-chip: Chitha i-coolant (amanzi ahlanjululweyo + izongezo) kwindawo yokusika ukunciphisa umonakalo wokushisa kunye nokususa iitshiphusi.

Iiparamitha eziphambili:

1. Isantya sokusika: 0.2 ~ 1.0mm / min (kuxhomekeke kwisikhokelo se-crystal kunye nobukhulu beSiC).

2. Uxinzelelo lomgca: 20 ~ 50N (iphezulu kakhulu kulula ukuphula umgca, iphantsi kakhulu ichaphazela ukuchaneka kokusika).

3.Ubukhulu be-Wafer: umgangatho we-350 ~ 500μm, i-wafer inokufikelela kwi-100μm.

Iimpawu eziphambili:

(1) Ukusika ukuchaneka
Ukunyamezela ukutyeba: ± 5μm (@350μm wafer), ngcono kunokusika udaka oluqhelekileyo (± 20μm).

Uburhabaxa bomphezulu: Ra<0.5μm (akukho kugaya okongeziweyo okufunekayo ukuze kuncitshiswe ubungakanani bokucutshungulwa okulandelayo).

I-Warpage: <10μm (ukunciphisa ubunzima bokupholisha okulandelayo).

(2) Ukusebenza kakuhle
Ukusika umgca we-Multi-line: ukusika iinqununu ze-100 ~ 500 ngexesha, ukwandisa amandla okuvelisa i-3 ~ 5 amaxesha (vs. Umgca we-Single cut).

Ubomi bomgca: Umgca wedayimane unokusika i-100 ~ 300km SiC (kuxhomekeke kubunzima be-ingot kunye nokuphucula inkqubo).

(3) Ukulungiswa komonakalo ophantsi
Ukuqhekeka komphetho: <15μm (ukusika kwendabuko> 50μm), phucula isivuno se-wafer.

Umaleko womonakalo ongaphantsi komhlaba: <5μm (ukunciphisa ukususwa kokupolisha).

(4) Ukukhuselwa kwendalo kunye noqoqosho
Akukho kungcoliseka kodaka: Ukuncipha kweendleko zokulahla ulwelo lwenkunkuma xa kuthelekiswa nokusika udaka.

Ukusetyenziswa kwezinto: Ukusika ilahleko <100μm / umsiki, ukugcina izinto ze-SiC ekrwada.

Isiphumo sokusika:

1. Umgangatho we-Wafer: akukho zintanda ze-macroscopic kumphezulu, iziphene ezincinci ezincinci (i-controllable dislocation extension). Ungangena ngokuthe ngqo kwikhonkco lokupholisha elirhabaxa, unciphise inkqubo yokuhamba.

2. Ukungaguquguquki: ukutenxa kobunzima be-wafer kwibhetshi <± 3%, ilungele imveliso ezenzekelayo.

3.Ukusebenza: Inkxaso ye-4H / 6H-SiC yokusika ingot, ehambelana nohlobo lwe-conductive / semi-insulated.

Iinkcukacha zobuchwephesha:

Inkcazo	Iinkcukacha
Imilinganiselo (L × W × H)	2500x2300x2500 okanye wenze ngokwezifiso
Ukusetyenzwa kobungakanani bempahla	4, 6, 8, 10, 12 intshi ze-silicon carbide
Uburhabaxa bomphezulu	Ra≤0.3u
Isantya esiphakathi sokusika	0.3mm/min
Ubunzima	5.5t
Ukusika inkqubo yokumisela amanyathelo	≤30 amanyathelo
Ingxolo yezixhobo	≤80 dB
Uxinzelelo lwentsimbi yentsimbi	0~110N(0.25 tension yocingo yi 45N)
Isantya socingo lwentsimbi	0~30m/S
Amandla onke	50kw
Idayimani yocingo lwedayimani	≥0.18mm
Phelisa ukuba tyaba	≤0.05mm
Ukusika kunye nesantya sokuqhawula	≤1% (ngaphandle kwezizathu zabantu, izinto zesilicon, umgca, ukugcinwa kunye nezinye izizathu)

Iinkonzo ze-XKH:

I-XKH ibonelela ngenkonzo yenkqubo yonke ye-silicon carbide diamond wire cutting machine, kubandakanywa ukhetho lwezixhobo (i-wire diameter / wire speed matching), uphuhliso lwenkqubo (ukusika i-parameter optimization), i-consumables supply (i-diamond wire, ivili lomkhombandlela) kunye nenkxaso emva kokuthengisa (ukugcinwa kwezixhobo, uhlalutyo lomgangatho wokusika), ukunceda abathengi bafikelele kwisivuno esiphezulu (> 95%), i-SiC yexabiso eliphantsi lokuvelisa i-wafer mass. Ikwabonelela ngokuphuculwa okwenziwe ngokwezifiso (njengokunqunyulwa kwe-ultra-thin, ukulayishwa ngokuzenzekelayo kunye nokukhulula) kunye nexesha le-4-8 leveki.