Umatshini wokusika ucingo lwe-silicon carbide diamond wire processing 4/6/8/12 intshi SiC ingot

Umatshini wokusika ucingo lwedayimani lwe-silicon carbide 4/6/8/12 intshi yokucubungula i-SiC ingot Umfanekiso obonisiweyo

Inkcazo emfutshane:

Umatshini wokusika i-silicon carbide Diamond Wire luhlobo lwezixhobo zokucubungula ezichanekileyo kakhulu ezinikezelwe kwisilayi se-silicon carbide (SiC), kusetyenziswa ubuchwepheshe be-Diamond Wire Saw, ngokusebenzisa i-wire yedayimani ehamba ngesantya esiphezulu (ububanzi bomgca obuyi-0.1 ~ 0.3mm) ukuya kwi-SiC ingot multi-wire cutting, ukufezekisa ukulungiswa kwe-wafer echanekileyo kakhulu, enomonakalo omncinci. Ezi zixhobo zisetyenziswa kakhulu kwi-SiC power semiconductor (MOSFET/SBD), isixhobo serediyo (GaN-on-SiC) kunye ne-optoelectronic device substrate processing, sisixhobo esibalulekileyo kwikhonkco leshishini leSiC.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo wokusebenza:

1. Ukulungiswa kwe-Ingot: I-SiC ingot (4H/6H-SiC) inamathele kwiqonga lokusika elidlula kwisixhobo ukuqinisekisa ukuchaneka kwendawo (± 0.02mm).

2. Intshukumo yomgca wedayimani: umgca wedayimani (amasuntswana edayimani afakwe ngombane kumphezulu) uqhutywa yinkqubo yevili elikhokelayo ukuze kujikelezwe ngesantya esiphezulu (isantya somgca yi-10 ~ 30m/s).

3. Ukutya kokusika: i-ingot inikwa kwicala elimiselweyo, kwaye umgca wedayimani unqunyulwa ngaxeshanye ngemigca emininzi ehambelanayo (imigca eli-100 ukuya kuma-500) ukwenza ii-wafers ezininzi.

4. Ukupholisa nokususa iitshiphusi: Futha i-coolant (amanzi acocekileyo + izongezo) kwindawo yokusika ukuze unciphise umonakalo wobushushu kwaye ususe iitshiphusi.

Iiparameter eziphambili:

1. Isantya sokusika: 0.2 ~ 1.0mm/min (kuxhomekeke kwicala lekristale kunye nobukhulu beSiC).

2. Uxinzelelo lomgca: 20~50N (uphezulu kakhulu kulula ukuwuphula umgca, uphantsi kakhulu kuchaphazela ukuchaneka kokusika).

3. Ubukhulu be-wafer: umgangatho oqhelekileyo yi-350~500μm, i-wafer inokufikelela kwi-100μm.

Iimpawu eziphambili:

(1) Ukuchaneka kokusika
Ukunyamezelana kobukhulu: ±5μm (@350μm wafer), ingcono kunendlela eqhelekileyo yokusika udaka (±20μm).

Uburhabaxa bomphezulu: Ra<0.5μm (akukho mfuneko yokugaya eyongezelelweyo ukunciphisa ubungakanani bokucubungula okulandelayo).

Iphepha lokugoba: <10μm (nciphisa ubunzima bokupolisha okulandelayo).

(2) Ukusebenza kakuhle kokucubungula
Ukusikwa kwemigca emininzi: ukusika iziqwenga ezili-100-500 ngexesha, kwandisa amandla okuvelisa izihlandlo ezi-3-5 (xa kuthelekiswa nokusikwa komgca omnye).

Ubomi bomgca: Umgca wedayimani unganqumla i-100 ~ 300km SiC (kuxhomekeke kubunzima be-ingot kunye nokulungiswa kwenkqubo).

(3) Ukulungiswa komonakalo ophantsi
Ukuqhekeka komphetho: <15μm (ukusika kwendabuko >50μm), kuphucula isivuno se-wafer.

Umaleko womonakalo ongaphantsi komhlaba: <5μm (ukunciphisa ukususwa kokupholisha).

(4) Ukhuseleko lokusingqongileyo kunye noqoqosho
Akukho ngcoliseko lwedaka: Iindleko zokulahla ulwelo olungcolileyo ziyancipha xa kuthelekiswa nokusikwa kwedaka.

Ukusetyenziswa kwezinto: Ukusika ilahleko <100μm/ umsiki, ukonga izinto ezikrwada zeSiC.

Isiphumo sokusika:

1. Umgangatho we-wafer: akukho mifantu mikhulu kumphezulu, zimbalwa iziphene ezincinci (ulwandiso olulawulekayo lokuphuma kwenkunkuma). Ingangena ngqo kwikhonkco lokupholisha elirhabaxa, inciphise ukuhamba kwenkqubo.

2. Ukungaguquguquki: ukuphambuka kobukhulu be-wafer kwibhetshi yi-<±3%, ifanelekile kwimveliso ezenzekelayo.

3.Ukusetyenziswa: Inkxaso yokusika ingot ye-4H/6H-SiC, iyahambelana nohlobo oluqhubayo/olungena-insulation.

Iinkcukacha zobugcisa:

Inkcazo	Iinkcukacha
Ubukhulu (L × W × H)	2500x2300x2500 okanye wenze ngokwezifiso
Uluhlu lobungakanani bezinto ezicutshungulwayo	I-4, 6, 8, 10, 12 intshi ze-silicon carbide
Uburhabaxa bomphezulu	Ra≤0.3u
Isantya esiphakathi sokusika	0.3mm/ngomzuzu
Ubunzima	5.5t
Amanyathelo okuseta inkqubo yokusika	Amanyathelo angama-≤30
Ingxolo yezixhobo	≤80 dB
Uxinzelelo lwentambo yentsimbi	0~110N(uxinzelelo lwentambo oluyi-0.25 yi-45N)
Isantya sentambo yentsimbi	0~30m/S
Amandla apheleleyo	50kw
Ububanzi bentambo yedayimani	≥0.18mm
Ukuphela kokuthe tyaba	≤0.05mm
Izinga lokusika kunye nokuqhekeka	≤1% (ngaphandle kwezizathu zabantu, izinto zesilicon, umgca, ukugcinwa kunye nezinye izizathu)

Iinkonzo ze-XKH:

I-XKH ibonelela ngenkonzo yenkqubo yonke yomatshini wokusika ucingo lwedayimani lwe-silicon carbide, kubandakanya ukukhethwa kwezixhobo (ububanzi bentambo/ukulinganisa isantya sentambo), uphuhliso lwenkqubo (ukwenziwa ngcono kweeparameter zokusika), ukubonelela ngezinto ezisetyenziswayo (ucingo lwedayimani, ivili lesikhokelo) kunye nenkxaso emva kokuthengisa (ukugcinwa kwezixhobo, uhlalutyo lomgangatho wokusika), ukunceda abathengi bafumane isivuno esiphezulu (>95%), imveliso ye-wafer ye-SiC ebiza kancinci. Ikwabonelela ngohlaziyo olwenziwe ngokwezifiso (njengokusika okuncinci kakhulu, ukulayisha kunye nokukhulula ngokuzenzekelayo) kunye nexesha lokunika ingcebiso leeveki ezi-4-8.