I-silicon

I-Silicon Wafer ene-Ti/Cu ene-Metal-Coated (Titanium/Copper)
Isisombululo esidibeneyo sokugquma imbewu yeSiC–Bonding–Sintering
ipleyiti yegolide ye-silicon wafer （Si Wafer） 10nm 50nm 100nm 500nm Au Ukuqhuba kakuhle kwe-LED
IiWafers zeSilicon eziGqitywe ngeGolide 2inch 4inch 6inch Ubukhulu bemaleko yeGolide: 50nm (± 5nm) okanye wenze ngokwezifiso ifilimu yokuGqitywa kweAu, ubumsulwa be-99.999%
Iilensi ze-Precision Monocrystalline Silicon (Si) – Ubungakanani kunye neeCoatings ezenziwe ngokwezifiso ze-Optoelectronics kunye ne-Infrared Imaging
Iilensi ze-High-Purity Single Crystal Silicon (Si) ezenziwe ngokwezifiso – Ubungakanani kunye neeCoatings ezilungiselelwe ukusetyenziswa kwe-Infrared kunye ne-THZ (1.2-7µm, 8-12µm)
I-Single Crystal Silicon Wafer Si Substrate Type N/P I-Outpult Silicon Carbide Wafer
I-SiC engaphantsi kwe-Si Composite Substrates
I-N-Type SiC kwi-Si Composite Substrates Dia6inch
I-2intshi ye-50.8mm ye-Silicon wafer FZ N-Type SSP
I-4intshi ye-Silicon wafer FZ CZ N-Type DSP okanye i-SSP Test grade
I-wafer ye-Silicon yohlobo lwe-N oluyi-6 intshi okanye uhlobo lwe-P oluyi-wafer ye-CZ Si

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