I-SICOI (iSilicon Carbide kwi-Insulator) IiWafers zeSiC Film kwiSilicon

Inkcazo emfutshane:

Ii-wafer zeSilicon Carbide on Insulator (SICOI) zizixhobo ze-semiconductor zesizukulwana esilandelayo ezidibanisa iipropati zomzimba neze-elektroniki eziphezulu ze-silicon carbide (SiC) kunye neempawu ezibalaseleyo zokwahlulwa kombane ze-insulating buffer layer, njenge-silicon dioxide (SiO₂) okanye i-silicon nitride (Si₃N₄). I-wafer eqhelekileyo ye-SICOI ine-epitaxial SiC layer encinci, ifilimu yokwahlulwa ephakathi, kunye ne-substrate esisiseko exhasayo, enokuba yi-silicon okanye i-SiC.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Ukwaziswa kwee-wafer zeSilicon Carbide kwi-Insulator (SICOI)

Olu lwakhiwo lwe-hybrid lwenziwe ukuze luhlangabezane neemfuno ezingqongqo zezixhobo ze-elektroniki ezinamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu. Ngokufaka umaleko wokukhusela, ii-wafer ze-SICOI zinciphisa amandla e-parasitic kwaye zicinezela imisinga yokuvuza, ngaloo ndlela ziqinisekisa amaza aphezulu okusebenza, ukusebenza ngcono, kunye nolawulo oluphuculweyo lobushushu. Ezi zibonelelo zizenza zibe luncedo kakhulu kumacandelo afana nezithuthi zombane, iziseko zonxibelelwano ze-5G, iinkqubo zeenqwelo moya, ii-elektroniki ze-RF eziphambili, kunye nobuchwepheshe be-sensor ye-MEMS.

Umgaqo weMveliso yeeWafers ze-SICOI

Iiwafer ze-SICOI (Silicon Carbide on Insulator) zenziwa ngesixhobo esiphucukileyoinkqubo yokubopha kunye nokuncitshiswa kwe-wafer:

Ukukhula kweSiC Substrate– I-wafer ye-SiC yekristale enye ekumgangatho ophezulu (4H/6H) ilungiswa njengesixhobo somnikelo.
Ukufakwa kweLayer yokukhusela– Ifilimu yokukhusela (iSiO₂ okanye iSi₃N₄) yenziwe kwi-carrier wafer (iSi okanye iSiC).
Ukubopha iWafer– I-SiC wafer kunye ne-carrier wafer zidityaniswe phantsi kobushushu obuphezulu okanye uncedo lwe-plasma.
Ukucutha kunye nokupolisha– I-wafer ye-SiC donor iyancitshiswa ibe zii-micrometer ezimbalwa kwaye ipholishwe ukuze kubekho umphezulu ogudileyo ngokweathom.
Uhlolo lokugqibela– I-wafer ye-SCOI egqityiweyo ivavanywa ukufana kobukhulu, uburhabaxa bomphezulu, kunye nokusebenza kobushushu.

Ngale nkqubo,umaleko we-SiC osebenzayo obhityileyoeneempawu zombane kunye nobushushu obuhle kakhulu idityaniswe nefilimu yokukhusela kunye nesiseko senkxaso, nto leyo eyenza iqonga elisebenza kakuhle lezixhobo zamandla zesizukulwana esilandelayo kunye nezixhobo zeRF.

Iingenelo eziphambili zee-SICOI Wafers

Udidi lweeMpawu	Iimpawu zobugcisa	Iingenelo eziPhambili
Ulwakhiwo lwezinto	Umaleko osebenzayo we-4H/6H-SiC + ifilimu yokukhusela (SiO₂/Si₃N₄) + Si okanye umthwali weSiC	Ifezekisa ukwahlulwa kombane okuqinileyo, inciphisa ukuphazamiseka kwe-parasitic
Iipropati zoMbane	Amandla aphezulu okuqhekeka (>3 MV/cm), ilahleko ephantsi ye-dielectric	Yenzelwe ukusebenza nge-high-voltage kunye ne-high-frequency
Iipropati zoBushushu	Ukuqhuba kobushushu ukuya kuthi ga kwi-4.9 W/cm·K, kuzinzile ngaphezu kwe-500°C	Ukusasazwa kobushushu okusebenzayo, ukusebenza kakuhle phantsi kwemithwalo enzima yobushushu
Iipropati zoomatshini	Ubunzima obukhulu (Mohs 9.5), i-coefficient ephantsi yokwanda kobushushu	Iqinile xa ixinzeleleka, iphucula ubomi besixhobo
Umgangatho womphezulu	Umphezulu ogudileyo kakhulu (Ra <0.2 nm)	Ikhuthaza i-epitaxy engenaziphene kunye nokuveliswa kwezixhobo ezinokuthenjwa
Ukuvala ubushushu	Ukumelana >10¹⁴ Ω·cm, umsinga ovuzayo ophantsi	Ukusebenza okuthembekileyo kwi-RF kunye nezicelo zokwahlulwa kwe-voltage ephezulu
Ubungakanani kunye nokwenza ngokwezifiso	Ifumaneka kwiifomathi ze-4, 6, kunye ne-8-intshi; Ubukhulu be-SiC yi-1–100 μm; ubushushu obuyi-0.1–10 μm	Uyilo oluguquguqukayo kwiimfuno ezahlukeneyo zesicelo

Iindawo eziPhambili zoSetyenziso

Icandelo lezicelo	Amatyala aqhelekileyo okusetyenziswa	Iingenelo zokusebenza
Amandla e-Elektroniki	Ii-inverters ze-EV, izitishi zokutshaja, izixhobo zamandla zoshishino	Umbane ophezulu wokuqhekeka, ilahleko yokutshintsha encitshisiweyo
I-RF kunye ne-5G	Izikhulisi zamandla zesikhululo sesiseko, izinto ze-millimeter-wave	Iiparasites eziphantsi, zixhasa imisebenzi ye-GHz-range
IiSensors zeMEMS	Izinzwa zoxinzelelo olunzima kwindawo engqongileyo, i-MEMS yomgangatho wokuhambahamba	Uzinzo oluphezulu lobushushu, olumelana nemitha
Inqwelo-moya kunye noKhuselo	Unxibelelwano lwesathelayithi, iimodyuli zamandla ee-avionics	Ukuthembeka kumaqondo obushushu aphezulu kunye nokuvezwa kwimitha
Igridi ekrelekrele	Ii-HVDC converters, ii-solid-state circuit breakers	Ubushushu obuphezulu kunciphisa ukulahleka kwamandla
I-Optoelectronics	Ii-LED ze-UV, ii-substrates ze-laser	Umgangatho ophezulu wekristale uxhasa ukukhutshwa kokukhanya okusebenzayo

Ukwenziwa kwe-4H-SiCOI

Ukuveliswa kwee-wafers ze-4H-SiCOI kufezekiswa ngokusebenzisaiinkqubo zokubopha kunye nokuncitshiswa kwe-wafer, evumela ii-interfaces zokukhusela ezikumgangatho ophezulu kunye neeleya ezisebenzayo ze-SiC ezingenaziphene.

a: Isicwangciso sokwenziwa kweqonga lezinto ze-4H-SiCOI.
b: Umfanekiso we-wafer ye-4H-SiCOI eyi-intshi ezi-4 esebenzisa i-bonding kunye ne-thinning; iindawo ezingalunganga ziphawulwe.
c: Ukuchazwa kokufana kobukhulu be-substrate ye-4H-SiCOI.
dUmfanekiso obonakalayo wedayi ye-4H-SiCOI.
e: Ukuhamba kwenkqubo yokwenza i-resonator ye-microdisk ye-SiC.
f: I-SEM ye-resonator ye-microdisk egqityiweyo.
g: I-SEM ekhulisiweyo ebonisa udonga olusecaleni lwe-resonator; umfanekiso we-AFM ubonisa ukugudiswa komphezulu we-nanoscale.
h: I-SEM enqamlezileyo ibonisa umphezulu ongaphezulu omile okwe-parabolic.

Imibuzo Ebuzwa Rhoqo malunga neeWafers ze-SICOI

Umbuzo 1: Ziziphi iingenelo ezinazo ii-wafer ze-SICOI ngaphezu kwee-wafer zeSiC zemveli?
A1: Ngokungafaniyo ne-substrates ze-SiC eziqhelekileyo, ii-wafers ze-SICOI ziquka umaleko wokukhusela onciphisa amandla e-parasitic kunye nemisinga yokuvuza, nto leyo ekhokelela ekusebenzeni kakuhle, impendulo engcono yamaza, kunye nokusebenza kakuhle kobushushu.

Q2: Zeziphi iisayizi ze-wafer ezifumaneka rhoqo?
A2: Iiwafer ze-SICOI zihlala ziveliswa kwiifomathi ze-intshi ezi-4, i-intshi ezi-6, kunye ne-intshi ezi-8, kunye ne-SiC eyenzelwe wena kunye nobukhulu beeleyara zokukhusela ziyafumaneka ngokuxhomekeke kwiimfuno zesixhobo.

Umbuzo 3: Ngawaphi amashishini azuza kakhulu kwiiwafer ze-SICOI?
A3: Amashishini aphambili aquka ii-elektroniki zamandla kwizithuthi zombane, ii-elektroniki ze-RF kwiinethiwekhi ze-5G, ii-MEMS zeenzwa zeenqwelo-moya, kunye nee-optoelectronics ezifana nee-UV LEDs.

Umbuzo 4: Umaleko wokukhusela ubushushu uyiphucula njani indlela esebenza ngayo isixhobo?
I-A4: Ifilimu yokukhusela ubushushu (i-SiO₂ okanye i-Si₃N₄) ithintela ukuvuza kwamandla ombane kwaye inciphisa ukuthetha ngombane, ivumela ukunyamezela kwamandla ombane aphezulu, ukutshintsha okusebenzayo, kunye nokunciphisa ukulahleka kobushushu.

Umbuzo 5: Ngaba ii-wafer ze-SICOI zifanelekile ukusetyenziswa kubushushu obuphezulu?
A5: Ewe, ngenxa yokuqhuba okuphezulu kobushushu kunye nokumelana okungaphezulu kwama-500°C, ii-wafer ze-SICOI zenzelwe ukusebenza ngokuthembekileyo phantsi kobushushu obugqithisileyo nakwiindawo ezirhabaxa.

Umbuzo 6: Ngaba ii-wafers ze-SICOI zingenziwa ngokwezifiso?
A6: Ngokuqinisekileyo. Abavelisi banikezela ngoyilo olulungiselelweyo lobukhulu obuthile, amanqanaba okusebenzisa iziyobisi, kunye nokudibanisa i-substrate ukuhlangabezana neemfuno ezahlukeneyo zophando kunye nezoshishino.

Ngaphambili: Umatshini wokusika iDayimane ngentambo yeSiC | I-Sapphire | I-Quartz | Iglasi

Okulandelayo: Umatshini wokuSayina iDayimani ye-Multi-Wire weSiC Sapphire Ultra-Hard Brittle Materials