I-SiC
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I-wafer ye-SiC Epitaxiy eyi-6intshi N/P yamkelwe ngokwezifiso
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I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani
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I-wafer ye-SiC Epi ye-4intshi ye-MOS okanye ye-SBD
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I-2intshi SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
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I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer
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Imbewu ye-4H-N Dia205mm SiC evela eTshayina iMonocrystaline ye-P kunye ne-D grade
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IiWafers zeSiC eziyi-4 intshi eziyi-6H ezizi-Semi-Insulating SiC Substrates zikumgangatho ophezulu, uphando, kunye nomgangatho ongeyonyani
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I-wafer ye-substrate ye-HPSI SiC eyi-intshi ezi-6 Ii-wafer ze-Silicon Carbide ezithiywayo kancinci
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Iiwafer zeSiC ezi-4 intshi ezingcolisayo zeHPSI SiC substrate Prime Production grade
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I-wafer ye-substrate ye-3 intshi engama-76.2mm eyi-4H-Semi SiC eyi-Silicon Carbide Iiwafer ze-SiC ezingcolisayo kancinci
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Ii-substrates ze-SiC ze-3 intshi ze-Dia76.2mm ze-HPSI Prime Research kunye ne-Dummy grade
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I-wafer ye-substrate ye-4H-semi HPSI 2inch SiC yemveliso ye-Dummy Research grade