I-SiC
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I-Silicon Carbide eyi-4H-SiC ene-Semi-Insulating Ingot eyi-6 kwi-insulation, i-Dummy Grade
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Uhlobo lweSiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Uphando / Udidi oluyiDummy
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I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo loBulukhuni obuphezulu bokugqwala Ukumelana nokugqwala kwePrime Grade Polishing
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I-2intshi yeSilicon Carbide Wafer 6H-N Uhlobo lwePrime Grade Research Grade Dummy Grade 330μm 430μm Ubungqingqwa
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I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade
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Iisubstrates zeSiC Composite ze-N-Type Dia6inch I-monocrystalline esemgangathweni ophezulu kunye ne-substrate ekumgangatho ophantsi
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IiSubstrates zeSiC Composite eziNcincisa ubushushu obuphantsi, iDia2inch 4inch 6inch 8inch HPSI
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I-N-Type SiC kwi-Si Composite Substrates Dia6inch
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I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide
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I-substrate ye-SiC ye-3 intshi Imveliso ye-Dia76.2mm 4H-N
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I-SiC substrate P kunye ne-D grade Dia50mm 4H-N 2inch
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Uhlobo lweSiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch ubukhulu: ＞10mm