SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala

Inkcazelo emfutshane:

I-3-inch High Purity Silicon Carbide (i-SiC) ii-wafers zenzelwe ngokukodwa ukuba zifuna izicelo kumbane wamandla, i-optoelectronics, kunye nophando oluphambili. Iyafumaneka kwiMveliso, uPhando, kunye namaBanga eDummy, ezi ziqwenga zihambisa uxhathiso olukhethekileyo, ingxinano ephantsi yesiphene, kunye nomgangatho ophezulu womphezulu. Ngeepropati ze-semi-insulating ezingagqitywanga, zibonelela ngeqonga elifanelekileyo lokuqulunqa izixhobo eziphezulu zokusebenza ezisebenza phantsi kweemeko ezishushu kunye nombane.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

Ipharamitha	IBanga leMveliso	IBanga loPhando	IBanga leDummy	Iyunithi
IBanga	IBanga leMveliso	IBanga loPhando	IBanga leDummy
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ukutyeba	500 ± 25	500 ± 25	500 ± 25	µm
I-Wafer Orientation	Kwi-axis: <0001> ± 0.5 °	Kwi-axis: <0001> ± 2.0 °	Kwi-axis: <0001> ± 2.0 °	isidanga
Uxinaniso lweMibhobho (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ukuxhathisa koMbane	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Ingaguqulwanga	Ingaguqulwanga	Ingaguqulwanga
Ukuqhelaniswa neFlethi okuPhambili	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	isidanga
Ubude beFlethi obuPhambili	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude beFlethi yesibini	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Ukuqhelaniswa neFlethi yesibini	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	isidanga
Ukungabandakanywa kuMda	3	3	3	mm
LTV/TTV/Bow/Warp	3/10 / ±30/40	3/10 / ±30/40	5/15 / ±40/45	µm
Uburhabaxa boMphezulu	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe
Iintanda (Ukukhanya okuPhezulu)	Akukho nanye	Akukho nanye	Akukho nanye
Iipleyiti zeHex (Ukukhanya okuPhezulu)	Akukho nanye	Akukho nanye	Indawo eyongezelekayo 10%	%
Iindawo zePolytype (Ukukhanya okuPhezulu)	Indawo eyongezelekayo 5%	Indawo eyongezelekayo 20%	Indawo eyongezelekayo 30%	%
Imikrwelo (UkuKhanya okuPhezulu)	≤ Imikrwelo emi-5, ubude obuqokelelweyo ≤ 150	≤ Imikrwelo eyi-10, ubude obuqokelelweyo ≤ 200	≤ Imikrwelo eyi-10, ubude obuqokelelweyo ≤ 200	mm
Edge Chipping	Akukho nanye ≥ 0.5 mm ububanzi/ubunzulu	I-2 ivunyelwe ≤ 1 mm ububanzi / ubunzulu	I-5 ivunyelwe ≤ 5 mm ububanzi / ubunzulu	mm
Ungcoliseko loMphezulu	Akukho nanye	Akukho nanye	Akukho nanye

Usetyenziso

1. High-Power Electronics
I-thermal conductivity ephezulu kunye ne-bandgap ebanzi yee-wafers ze-SiC zibenza zilungele amandla aphezulu, izixhobo ezisebenza ngokuphindaphindiweyo:
●I-MOSFETs kunye nee-IGBTs zokuguqula amandla.
● Iisistim zamandla ezithuthi zombane ezikwinqanaba eliphezulu, kuquka ii-inverters neetshaja.
● Isiseko segridi ehlakaniphile kunye neenkqubo zamandla ahlaziyekayo.
2. Iinkqubo zeRF kunye neMicrowave
Ii-substrates ze-SiC zenza i-RF ye-frequency ephezulu kunye nosetyenziso lwe-microwave ngelahleko encinci yomqondiso:
● Unxibelelwano kunye neenkqubo zesathelayithi.
● Iinkqubo ze-radar ye-Aerospace.
● Amacandelo enethiwekhi ye-5G ephucukileyo.
3. I-Optoelectronics kunye neeSensors
Iipropathi ezizodwa ze-SiC zixhasa iintlobo ngeentlobo zezicelo ze-optoelectronic:
● Izixhobo zokujonga i-UV zokubeka iliso kokusingqongileyo kunye nemvakalelo yoshishino.
● I-LED kunye ne-laser substrates yokukhanya okuqinileyo kunye nezixhobo ezichanekileyo.
●Iinzwa zobushushu obuphezulu be-aerospace kunye nemizi-mveliso yeemoto.
4. Uphando kunye noPhuhliso
Ukwahluka kwamabakala (Uveliso, uPhando, iDummy) yenza ulinge lokucotha kunye neprototyping yesixhobo kwizifundiswa nakwishishini.

Iingenelo

●Ukuthembeka:Ukuxhathisa okugqwesileyo kunye nokuzinza kuwo onke amabakala.
●Ukulungiselela:Iziqhelaniso ezilungiselelweyo kunye nobukhulu ukuze zihambelane neemfuno ezahlukeneyo.
● Ukucoceka okuphezulu:Ukubunjwa okungagqitywanga kuqinisekisa ukuhluka okuncinci okunxulumene nokungcola.
●Ubungakanani:Iyahlangabezana neemfuno zemveliso yobuninzi kunye nophando lovavanyo.
Ii-intshi ezi-3 ze-SiC ezicoceke kakhulu ziyindlela yakho yokuya kwizixhobo zokusebenza eziphezulu kunye nenkqubela phambili yetekhnoloji. Ngemibuzo kunye neenkcukacha ezicacileyo, qhagamshelana nathi namhlanje.

Isishwankathelo

I-3-inch High Purity Silicon Carbide (SiC) Wafers, ekhoyo kwiMveliso, uPhando, kunye namaBanga e-Dummy, yi-premium substrates eyenzelwe i-electronics-power-power, i-RF / microwave systems, i-optoelectronics, kunye ne-R & D ephezulu. Ezi ziqwenga zibonakalisa iipropathi ezingagungxulwanga, ezi-semi-insulating ezine-resistivity egqwesileyo (≥1E10 Ω·cm yeBanga leMveliso), ukuxinana kwe-micropipe ephantsi (≤1 cm−2^-2−2), kunye nomgangatho obalaseleyo womphezulu. Zenzelwe usetyenziso oluphezulu, kubandakanywa uguqulo lwamandla, uthungelwano ngefowuni, imvakalelo ye-UV, kunye nobuchwepheshe be-LED. Ngolungelelwaniso olwenzekayo, ukuhanjiswa kwe-thermal ephezulu, kunye neepropathi zoomatshini ezomeleleyo, ezi ziqwenga ze-SiC zenza ukuba isixhobo sisebenze ngokufanelekileyo, sithembeke kunye nokwenziwa kwezinto ezintsha kumashishini kuwo wonke.