Isiseko seSiC 3inch 350um ubukhulu beHPSI Uhlobo lwePrime Grade Isigaba seDummy

Inkcazo emfutshane:

Iiwafers ze-High Purity Silicon Carbide (SiC) ezingama-intshi ezi-3 zenzelwe ngokukodwa ukusetyenziswa okuyimfuneko kwi-electronics enamandla, i-optoelectronics, kunye nophando oluphambili. Ezi wafers zifumaneka kwiMveliso, uPhando, kunye neeDummy Grades, zibonelela ngokumelana okugqwesileyo, uxinano oluphantsi lwesiphene, kunye nomgangatho ophezulu womphezulu. Ngeempawu zokukhusela ezingafakwanga, zibonelela ngeqonga elifanelekileyo lokwenza izixhobo ezisebenza kakuhle ezisebenza phantsi kweemeko ezishushu kakhulu nezombane.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati

Ipharamitha	Ibanga leMveliso	Ibanga loPhando	Ibanga elingeyonyani	Iyunithi
Ibanga	Ibanga leMveliso	Ibanga loPhando	Ibanga elingeyonyani
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubukhulu	500 ± 25	500 ± 25	500 ± 25	µm
Uqeqesho lweWafer	I-On-axis: <0001> ± 0.5°	I-On-axis: <0001> ± 2.0°	I-On-axis: <0001> ± 2.0°	isidanga
Uxinano lweeMipayipi ezincinci (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ukumelana nombane	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Ayivulwanga	Ayivulwanga	Ayivulwanga
Uqhelaniso oluPhambili oluSicaba	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	isidanga
Ubude obuPhambili obuSicaba	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude obuSicaba beSibini	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Ulwazelelelo lweSibini oluSicaba	90° CW ukusuka kwiflethi yokuqala ± 5.0°	90° CW ukusuka kwiflethi yokuqala ± 5.0°	90° CW ukusuka kwiflethi yokuqala ± 5.0°	isidanga
Ukukhutshwa komda	3	3	3	mm
I-LTV/TTV/Isaphetha/I-Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
Uburhabaxa bomphezulu	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe
Iintanda (Ukukhanya Okunamandla Aphezulu)	Akukho nanye	Akukho nanye	Akukho nanye
Iipleyiti zeHex (Ukukhanya Okuphezulu)	Akukho nanye	Akukho nanye	Indawo eqokelelweyo yi-10%	%
Iindawo zePolytype (Ukukhanya Okuphezulu)	Indawo eqokelelweyo yi-5%	Indawo eqokelelweyo yi-20%	Indawo eqokelelweyo yi-30%	%
Imikrwelo (Ukukhanya Okuphezulu)	≤ imikrwelo emi-5, ubude obudibeneyo ≤ 150	≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200	≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200	mm
Ukuqhekeza Umphetho	Akukho nto ≥ 0.5 mm ububanzi/ubunzulu	2 zivunyelwe ≤ 1 mm ububanzi/ubunzulu	5 ivumelekile ≤ 5 mm ububanzi/ubunzulu	mm
Ungcoliseko lomphezulu	Akukho nanye	Akukho nanye	Akukho nanye

Izicelo

1. Izixhobo zombane ezinamandla aphezulu
Ukuqhuba okuphezulu kobushushu kunye ne-bandgap ebanzi yee-wafers ze-SiC kuzenza zilungele izixhobo ezinamandla aphezulu, ezisebenzisa i-frequency ephezulu:
●Ii-MOSFET kunye nee-IGBT zokuguqula amandla.
●Iinkqubo zamandla ezithuthi zombane eziphucukileyo, kuquka ii-inverters kunye neetshaja.
●Iziseko zophuhliso zegridi ekrelekrele kunye neenkqubo zamandla avuselelekayo.
2. Iinkqubo zeRF kunye neMicrowave
Ii-substrates ze-SiC zivumela usetyenziso lwe-RF oluphezulu kunye ne-microwave kunye nokulahleka okuncinci kwesiginali:
●Iinkqubo zonxibelelwano nezesathelayithi.
●Iinkqubo zeradar ze-aerospace.
●Iinxalenye zenethiwekhi ze-5G eziphambili.
3. Ii-Optoelectronics kunye neeSensors
Iimpawu ezikhethekileyo zeSiC zixhasa iintlobo ngeentlobo zezicelo ze-optoelectronic:
●Izixhobo zokubona ubushushu be-UV zokujonga okusingqongileyo kunye nokubona izinto ezikwimizi-mveliso.
●Izixhobo ze-LED kunye ne-laser zokukhanyisa izixhobo ezisemgangathweni oqinileyo kunye nezixhobo ezichanekileyo.
●Izinzwa zobushushu obuphezulu kwimizi-mveliso yeenqwelo-moya kunye neemoto.
4. Uphando noPhuhliso
Ukwahlukahlukana kwamanqanaba (iMveliso, uPhando, iDummy) kwenza kube lula ukwenza uvavanyo oluphambili kunye nomzekelo wezixhobo kwizifundo nakwimizi-mveliso.

Iingenelo

●Ukuthembeka:Ukumelana okuhle kakhulu kunye nozinzo kuzo zonke iiklasi.
●Ukwenza ngokwezifiso:Ulungelelwaniso kunye nobukhulu obulungiselelwe iimfuno ezahlukeneyo.
●Ucoceko Oluphezulu:Ukwakheka okungafakwanga idophu kuqinisekisa ukuba akukho mahluko maninzi anxulumene nokungcola.
●Ukwanda:Iyahlangabezana neemfuno zokwenziwa ngobuninzi kunye nophando lovavanyo.
Ii-wafer ze-SiC ezi-3-intshi ezicocekileyo kakhulu ziyindlela yakho yokufumana izixhobo ezisebenza kakuhle kunye nophuhliso lobuchwepheshe obutsha. Ukuze ufumane imibuzo kunye neenkcukacha ezineenkcukacha, nxibelelana nathi namhlanje.

Isishwankathelo

IiWafers ze-High Purity Silicon Carbide (SiC) eziziisentimitha ezi-3, ezifumaneka kwiMveliso, uPhando, kunye neeDummy Grades, zizinto eziphambili ezilungiselelwe ii-elektroniki ezinamandla aphezulu, iinkqubo ze-RF/microwave, ii-optoelectronics, kunye ne-R&D ephucukileyo. Ezi wafers zineempawu ezingafakwanga, ezi-semi-insulating ezine-resistivity egqwesileyo (≥1E10 Ω·cm kwiMveliso Grade), uxinano oluphantsi lwe-micropipe (≤1 cm−2^-2−2), kunye nomgangatho ogqwesileyo womphezulu. Zilungiselelwe ukusetyenziswa okuphezulu, kubandakanya ukuguqulwa kwamandla, unxibelelwano, ukuva i-UV, kunye neetekhnoloji ze-LED. Ngeendlela ezilungiselelwe ngokwezifiso, ukuqhuba kobushushu okuphezulu, kunye neempawu zoomatshini eziqinileyo, ezi wafers zeSiC zivumela ukwenziwa kwezixhobo ezisebenzayo nezithembekileyo kunye nokuvelisa izinto ezintsha kumashishini onke.