I-SiC Ingot yokuKhula iFunese yeSiC Crystal eNkulu-Diameter ye-SiC Crystal TSSG/LPE Iindlela

Iziko lokuKhula leSiC Ingot leSiC sobuDiametha obuKhulu beSiC Crystal TSSG/LPE Iindlela eziboniswayo

Inkcazelo emfutshane:

I-XKH ye-liquid-phase silicon carbide ingot ingot yokukhula komlilo isebenzisa i-TSSG ehamba phambili yehlabathi (i-Top-Seeded Solution Growth) kunye ne-LPE (i-Liquid Phase Epitaxy) iteknoloji, eyenzelwe ngokukodwa ukukhula kwe-crystal eyodwa ye-SiC. Indlela ye-TSSG ivumela ukukhula kwe-4-8 intshi enkulu-ububanzi be-4H / 6H-SiC ingots ngokusebenzisa i-gradient yeqondo lokushisa elichanekileyo kunye nokulawulwa kwesantya sokuphakamisa imbewu, ngelixa indlela ye-LPE iququzelela ukukhula okulawulwayo kwe-SiC epitaxial layers kumaqondo obushushu aphantsi, ngokukodwa afanelekileyo kwi-ultra-low defect epitaxial layers. Le nkqubo ye-ingot ye-liquid ye-silicon carbide ingot isetyenziswe ngempumelelo kwimveliso ye-industrial ye-crystals ye-SiC eyahlukeneyo equka uhlobo lwe-4H / 6H-N kunye ne-4H / 6H-SEMI uhlobo lwe-insulating, ukubonelela ngezisombululo ezipheleleyo ezivela kwizixhobo ukuya kwiinkqubo.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo wokuSebenza

Umgaqo ongundoqo wokukhula kwe-ingot yesigaba solwelo se-silicon carbide ibandakanya ukunyibilikisa izinto ezicocekileyo ze-SiC kwisinyithi esityhidiweyo (umzekelo, i-Si, i-Cr) kwi-1800-2100 ° C ukwenza izisombululo ezigcweleyo, ezilandelwa kukukhula okulawulwayo kwe-SiC enye ikristale kwiikristale zembewu ngokuhlengahlengiswa kobushushu obuchanekileyo kunye nohlengahlengiso oluchanekileyo lobushushu. Le teknoloji ifaneleke ngokukodwa ukuvelisa ucoceko oluphezulu (> 99.9995%) 4H / 6H-SiC iikristale enye eneziphene eziphantsi (<100 / cm²), ukuhlangabezana neemfuno ezingqongqo ze-substrate zombane kunye nezixhobo ze-RF. Inkqubo yokukhula kwesigaba se-liquid yenza ulawulo oluchanekileyo lwe-crystal conductivity uhlobo (uhlobo lwe-N / P) kunye nokuxhathisa ngokubunjwa kwesisombululo esilungisiweyo kunye neeparitha zokukhula.

Amacandelo anguNdoqo

1. Inkqubo ekhethekileyo yeCrucible: I-graphite / tantalum composite crucible, ukumelana nokushisa> 2200 ° C, ukumelana ne-SiC melt corrosion.

2. Inkqubo yokufudumeza i-Multi-Zone: Ukuxhatshazwa okudibeneyo / ukufudumeza kwe-induction kunye nokuchaneka kokulawula ukushisa kwe-± 0.5 ° C (1800-2100 ° C uluhlu).

3. Inkqubo yokunyakaza okuchanekileyo: Ulawulo oluphindwe kabini lwe-loop yokujikeleza kwembewu (0-50rpm) kunye nokuphakamisa (0.1-10mm / h).

4. Inkqubo yokulawula i-Atmosphere: Ukucoceka okuphezulu kwe-argon / nitrogen ukhuseleko, uxinzelelo lokusebenza oluhlengahlengiswayo (0.1-1atm).

5. Inkqubo yoLawulo oluBukrelekrele: I-PLC + ye-PC yamashishini yolawulo olungafunekiyo kunye nexesha lokwenyani lokujonga ujongano lokukhula.

6. Inkqubo yokupholisa ngokufanelekileyo: Uyilo lokupholisa amanzi olusemgangathweni luqinisekisa ukusebenza okuzinzileyo kwexesha elide.

TSSG vs. LPE Uthelekiso

Iimpawu	Indlela ye-TSG	Indlela ye-LPE
Ukukhula kweTemp	2000-2100°C	1500-1800°C
Izinga lokuKhula	0.2-1mm/h	5-50μm/h
Ubungakanani beCrystal	4-8 intshi iingots	I-50-500μm i-epi-layers
Isicelo esingundoqo	Ukulungiswa kweSubstrate	Isixhobo samandla epi-amaleyi
Ubuninzi beSiphene	<500/cm²	<100/cm²
Iipolytypes ezifanelekileyo	4H/6H-SiC	4H/3C-SiC

Usetyenziso oluphambili

1. I-Electronics yamandla: I-6-intshi ye-4H-SiC substrates ye-1200V + MOSFETs / diodes.

2. I-5G RF Devices: I-Semi-insulating SiC substrates ye-base station PAs.

3. Izicelo ze-EV: I-Ultra-thick (>200μm) ii-epi-layers zeemodyuli zebakala lemoto.

4. I-PV Inverters: I-substrates eneziphene ezisezantsi ezivumela> 99% ukusebenza kakuhle kokuguqulwa.

Iingenelo ezingundoqo

1. Ubungangamsha beTekhnoloji
1.1 Uyilo oluDityanisiweyo lweendlela ezininzi
Esi sigaba solwelo seSiC ingot inkqubo yokukhula idibanisa i-TSSG kunye ne-LPE crystal ukukhula kwetekhnoloji. Inkqubo ye-TSSG isebenzisa ukukhula kwesisombululo se-top-seeded kunye ne-melt convection echanekileyo kunye nokulawulwa kwe-gradient yeqondo lokushisa (ΔT≤5℃ / cm), eyenza ukukhula okuzinzile kwe-4-8 intshi enkulu ye-SiC ingots kunye nezivuno eziqhutywayo ze-15-20kg ze-crystals ze-6H / 4H-SiC. Inkqubo ye-LPE isebenzisa ukwakheka kwe-solvent ephuculweyo (inkqubo ye-alloy ye-Si-Cr) kunye nolawulo lwe-supersaturation (±1%) ukukhulisa umgangatho otyebileyo we-epitaxial layers kunye noxinano lwesiphene <100/cm² kumaqondo asezantsi kakhulu (1500-1800℃).

1.2 Inkqubo yoLawulo oluBukrelekrele
Ixhotyiswe ngesizukulwana sesi-4 solawulo lokukhula ngobuchule obuquka:
• Ukujongwa kwe-multi-spectral in-situ (400-2500nm uluhlu lwamaza amaza)
• Ukuchongwa kwenqanaba lokunyibilika okusekwe kwiLaser (±0.01mm ukuchaneka)
• Ulawulo olusekwe kwidayamitha yeCCD evaliweyo (<±1mm ukuguquguquka)
• Ukongezwa kweparamitha yokukhula ngamandla e-AI (15% yokonga amandla)

2. Izinto eziluncedo kwiNkqubo yokuSebenza
2.1 Indlela ye-TSSG Amandla angundoqo
• Isakhono sobukhulu obukhulu: Ixhasa ukuya kuthi ga kwi-8-intshi yokukhula kwekristale nge>99.5% yokufana kwedayamitha
• Ubucwebe obugqwesileyo: Uxinaniso lwe-Dilocation <500/cm², uxinano lwemicropipe <5/cm²
• I-doping uniformity: <8% ye-n-type resistivity variation (4-intshi yamawafa)
• Izinga lokukhula elilungiselelweyo: Ukulungiswa kwe-0.3-1.2mm/h, 3-5× ngokukhawuleza kuneendlela zesigaba somphunga

2.2 Indlela ye-LPE Amandla angundoqo
• I-epitaxy yesiphene esezantsi kakhulu: Ubuninzi bemeko yojongano <1×10¹¹cm⁻²·eV⁻¹
• Ulawulo lokutyeba oluchanekileyo: 50-500μm iileya ze-epi ezine <±2% umahluko wobunzima
• Ukusebenza kakuhle kobushushu: 300-500℃ ngaphantsi kweenkqubo zeCVD
• Ukukhula kolwakhiwo oluntsonkothileyo: Ukuxhasa iindawo ezidityanisiweyo ze-pn, ii-superlattices, njl.

3. Izinto eziluncedo kwiMveliso
3.1 Ukulawulwa kweendleko
• 85% yokusetyenziswa kwemathiriyeli ekrwada (vs. 60% eqhelekileyo)
• I-40% yokusetyenziswa kwamandla aphantsi (xa kuthelekiswa ne-HVPE)
• I-90% yezixhobo zokusebenza (uyilo lwemodyuli lunciphisa ixesha lokuphumla)

3.2 UQinisekiso loMgangatho
• 6σ ulawulo lwenkqubo (CPK>1.67)
• Ukuchongwa kwesiphene kwi-Intanethi (isisombululo se-0.1μm)
• Inkqubo epheleleyo yokulandelelwa kwedatha (2000+ iiparamitha zexesha lokwenyani)

3.3 Ukubaleka
• Iyahambelana ne-4H / 6H / 3C iipolytypes
• Ukuphuculwa ukuya kwiimodyuli zenkqubo ye-intshi ezili-12
• Ixhasa iSiC/GaN hetero-integration

4. Izinto eziluncedo kwiSicelo soShishino
4.1 Izixhobo zoMbane
• I-Low-resistivity substrates (0.015-0.025Ω·cm) yezixhobo ze-1200-3300V
• I-semi-insulating substrates (>10⁸Ω·cm) yosetyenziso lweRF

4.2 IiTekhnoloji ezisakhulayo
• Unxibelelwano lwesixa: Iisubstrates zengxolo ephantsi kakhulu (1/f ingxolo<-120dB)
• Iindawo ezisingqongileyo ezigqithisileyo: Iikristale ezikwaziyo ukumelana nokusasazeka kwemitha (<5% ukuthotywa emva kwe-1×10¹⁶n/cm² yokukhanya kwemitha)

Iinkonzo ze-XKH

1. Izixhobo ezilungiselelweyo: Ulungelelwaniso lwenkqubo ye-TSSG/LPE.
2. Inkqubo yoQeqesho: Iinkqubo ezibanzi zoqeqesho lobugcisa.
3. Emva kokuthengisa Inkxaso: 24/7 impendulo yobugcisa kunye nokugcinwa.
4. Izisombululo ze-Turnkey: Inkonzo ye-spectrum epheleleyo ukusuka kufakelo ukuya kwinkqubo yokuqinisekiswa.
5. Ukubonelela ngezinto eziphathekayo: 2-12 intshi ye-SiC substrates / epi-wafers ekhoyo.

Iinzuzo eziphambili ziquka:
• Ukuya kuthi ga kwi-8-intshi yesakhono sokukhula kwekristale.
• Ukuxhathisa ukufana <0.5%.
• Ixesha lokuphumla kwezixhobo>95%.
• 24/7 inkxaso yobugcisa.