Isithando somlilo sokukhulisa i-SiC Ingot seendlela ze-SiC Crystal TSSG/LPE ezinobubanzi obukhulu

Isithando somlilo sokukhulisa i-SiC Ingot seendlela ezinkulu ze-SiC Crystal TSSG/LPE Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-XKH's liquid-phase silicon carbide ingot growth furnace isebenzisa ubuchwepheshe obuphambili kwihlabathi be-TSSG (Top-Seeded Solution Growth) kunye ne-LPE (Liquid Phase Epitaxy), ezenzelwe ngokukodwa ukukhula kwekristale enye ye-SiC esemgangathweni ophezulu. Indlela ye-TSSG ivumela ukukhula kwee-ingots ezinkulu ze-4H/6H-SiC ezingama-4-8 intshi ngokulawula ubushushu obuchanekileyo kunye nokulawula isantya sokuphakamisa imbewu, ngelixa indlela ye-LPE inceda ukukhula okulawulwayo kwee-SiC epitaxial layers kumaqondo obushushu aphantsi, ngakumbi ezifanelekileyo kwii-epitaxial layers ezinobunzima obuphantsi kakhulu. Le nkqubo yokukhula kwe-silicon carbide ingot ye-liquid-phase isetyenzisiwe ngempumelelo kwimveliso yemizi-mveliso yeekristale ezahlukeneyo ze-SiC kubandakanya uhlobo lwe-4H/6H-N kunye nohlobo lwe-insulating lwe-4H/6H-SEMI, inika izisombululo ezipheleleyo ukusuka kwizixhobo ukuya kwiinkqubo.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo Wokusebenza

Umgaqo ophambili wokukhula kwe-silicon carbide ingot ye-liquid-phase ubandakanya ukunyibilikisa izinto eziluhlaza ze-SiC ezicocekileyo kakhulu kwiintsimbi ezinyibilikisiweyo (umz., Si, Cr) kwi-1800-2100°C ukwenza izisombululo ezigcweleyo, kulandele ukukhula okulawulwayo kweekristale zeSiC ezizimeleyo kwiikristale zembewu ngokusebenzisa ubushushu obuchanekileyo kunye nolawulo lwe-supersaturation. Le teknoloji ifanelekile ngokukodwa ukuvelisa iikristale ze-high-purity (>99.9995%) ze-4H/6H-SiC ezizimeleyo ezine-deficit density ephantsi (<100/cm²), ezihlangabezana neemfuno ezingqongqo ze-substrate ze-electronics zamandla kunye nezixhobo ze-RF. Inkqubo yokukhula kwe-liquid-phase ivumela ulawulo oluchanekileyo lohlobo lwe-crystal conductivity (uhlobo lwe-N/P) kunye ne-resistivity ngokusebenzisa ukwakheka kwesisombululo esilungisiweyo kunye neeparamitha zokukhula.

Izinto ezingundoqo

1. Inkqubo yeCrucible ekhethekileyo: I-graphite/tantalum composite crucible ecocekileyo kakhulu, ukumelana nobushushu >2200°C, ukumelana nokugqwala kweSiC melt.

2. Inkqubo yokuFudumeza eneendawo ezininzi: Ukufudumeza okudibeneyo kokumelana/ukungenisa kunye nokuchaneka kokulawula ubushushu obuyi ±0.5°C (uluhlu lwe-1800-2100°C).

3. Inkqubo yokuHamba ngokuPheleleyo: Ulawulo oluphindwe kabini oluvaliweyo lokujikeleza imbewu (0-50rpm) kunye nokuphakamisa (0.1-10mm/h).

4. Inkqubo yoLawulo lweMozulu: Ukhuseleko lwe-argon/nitrogen olucocekileyo kakhulu, uxinzelelo lokusebenza oluhlengahlengiswayo (0.1-1atm).

5. Inkqubo yoLawulo oluBukrelekrele: Ulawulo olungafunekiyo lwe-PLC + i-PC yemizi-mveliso olune-interface yokukhula ngexesha langempela.

6. Inkqubo Yokupholisa Esebenzayo: Uyilo lokupholisa amanzi olunemigangatho luqinisekisa ukusebenza okuzinzileyo kwexesha elide.

Uthelekiso lwe-TSSG vs. LPE

Iimpawu	Indlela ye-TSSG	Indlela ye-LPE
Ubushushu bokukhula	2000-2100°C	1500-1800°C
Izinga lokukhula	0.2-1mm/h	5-50μm/h
Ubungakanani bekristale	Ii-ingots ezi-4-8 intshi	Iingqimba ze-epi ezingama-50-500μm
Isicelo Esiphambili	Ukulungiswa kwe-substrate	Iileya ze-epi zesixhobo samandla
Uxinano olupheleleyo lweziphene	<500/cm²	<100/cm²
IiPolytypes ezifanelekileyo	4H/6H-SiC	4H/3C-SiC

Izicelo eziphambili

1. I-Power Electronics: ii-substrates ze-4H-SiC eziyi-6-intshi ze-1200V+ MOSFETs/diodes.

2. Izixhobo ze-5G RF: Ii-substrates ze-SiC ezithintela ubushushu obuphantsi kwii-PA zesikhululo sesiseko.

3. Usetyenziso lwe-EV: Ii-epi-layers ezingqindilili kakhulu (>200μm) zeemodyuli ze-automotive-grade.

4. Ii-PV Inverters: Ii-substrates ezineziphene ezisezantsi ezivumela ukusebenza kakuhle kokuguqula okungaphezulu kwe-99%.

Iingenelo ezingundoqo

1. Ubuchule bobuchwephesha obuphezulu
1.1 Uyilo oluDibeneyo lweeNdlela ezininzi
Le nkqubo yokukhula kwe-SiC ingot yesigaba solwelo idibanisa ngobuchule ubuchwepheshe bokukhula kwekristale ye-TSSG kunye ne-LPE. Inkqubo ye-TSSG isebenzisa ukukhula kwesisombululo esinembewu ephezulu kunye nolawulo oluchanekileyo lwe-melt convection kunye nolawulo lwe-gradient yobushushu (ΔT≤5℃/cm), okuvumela ukukhula okuzinzileyo kwe-4-8 intshi ezinkulu ze-SiC ingots ezine-diameter ye-15-20kg kwi-6H/4H-SiC crystals. Inkqubo ye-LPE isebenzisa ulwakhiwo lwe-solvent olulungiselelweyo (inkqubo ye-Si-Cr alloy) kunye nolawulo lwe-supersaturation (±1%) ukukhulisa iileya ze-epitaxial ezinomgangatho ophezulu ezinobunzima obungaphantsi kwe-100/cm² kumaqondo obushushu aphantsi (1500-1800℃).

1.2 Inkqubo yoLawulo oluBukrelekrele
Ixhotyiswe ngolawulo lokukhula olukrelekrele lwesizukulwana sesi-4 oluquka:
• Ukubeka esweni i-multi-spectral in-situ (uluhlu lwamaza angama-400-2500nm)
• Ukufunyanwa kwenqanaba lokunyibilika elisekelwe kwi-laser (± 0.01mm ukuchaneka)
• Ulawulo lwe-CCD-based diameter closed-loop control (<±1mm fluctuation)
• Ukulungiswa kweeparameter zokukhula ezisebenzisa i-AI (ukonga amandla nge-15%)

2. Iingenelo zokusebenza kwenkqubo
2.1 Indlela ye-TSSG Amandla angundoqo
• Amandla amakhulu: Ixhasa ukukhula kwekristale ukuya kuthi ga kwi-8-intshi kunye nobukhulu obufanayo >99.5%
• Ubukrelekrele obuphezulu: Uxinano lwe-dislocation <500/cm², uxinano lwe-micropipe <5/cm²
• Ukufana kwe-doping: <8% umahluko we-resistivity yohlobo lwe-n (ii-wafers ze-intshi ezi-4)
• Izinga lokukhula elilungiselelweyo: Ingahlengahlengiswa nge-0.3-1.2mm/h, 3-5× ngokukhawuleza kuneendlela ze-vapor-phase

2.2 Indlela ye-LPE Amandla angundoqo
• I-epitaxy enesiphene esiphantsi kakhulu: Uxinano lwemeko yojongano <1×10¹¹cm⁻²·eV⁻¹
• Ulawulo oluchanekileyo lobukhulu: ii-epi-layers ezingama-50-500μm ezinokwahluka kobukhulu obungaphantsi kwe-±2%.
• Ukusebenza kakuhle kobushushu obuphantsi: 300-500℃ iphantsi kuneenkqubo ze-CVD
• Ukukhula kwesakhiwo esintsonkothileyo: Ixhasa ii-pn junctions, ii-superlattices, njl.njl.

3. Iingenelo zokuSebenza kakuhle kweMveliso
3.1 Ulawulo lweendleko
• Ukusetyenziswa kwezinto ezikrwada ezingama-85% (xa kuthelekiswa nama-60% aqhelekileyo)
• Ukusetyenziswa kwamandla okuphantsi ngama-40% (xa kuthelekiswa ne-HVPE)
• Ixesha lokusebenza kwezixhobo ezingama-90% (uyilo lwemodyuli lunciphisa ixesha lokusebenza)

3.2 Uqinisekiso loMgangatho
• Ulawulo lwenkqubo ye-6σ (CPK>1.67)
• Ukufunyanwa kweziphene kwi-intanethi (isisombululo se-0.1μm)
• Ukulandeleka kwedatha ngokupheleleyo (iiparameter zexesha langempela ezingaphezu kwama-2000)

3.3 Ukwanda kobungakanani
• Iyahambelana neepolytypes ze-4H/6H/3C
• Iimodyuli zenkqubo eziphuculweyo zibe yi-intshi ezili-12
• Ixhasa ukuhlanganiswa kwe-SiC/GaN hetero

4. Iingenelo zeSicelo seShishini
4.1 Izixhobo zamandla
• Ii-substrates ezingasebenzi kakuhle (0.015-0.025Ω·cm) zezixhobo ze-1200-3300V
• Ii-substrates ezithintela ubushushu obuphantsi (>10⁸Ω·cm) zezicelo ze-RF

4.2 Iiteknoloji Ezisakhasayo
• Unxibelelwano lwe-Quantum: Ii-substrates zengxolo ephantsi kakhulu (ingxolo eyi-1/f<-120dB)
• Iindawo ezingaqhelekanga: Iikristale ezimelana nemitha (<5% ukuwohloka emva kokukhanyiswa kwemitha kwe-1×10¹⁶n/cm²)

Iinkonzo ze-XKH

1. Izixhobo ezenzelwe wena: Uqwalaselo lwenkqubo ye-TSSG/LPE olulungiselelwe wena.
2. Uqeqesho lweNkqubo: Iinkqubo zoqeqesho lobugcisa ezipheleleyo.
3. Inkxaso emva kokuthengisa: Impendulo yobugcisa kunye nokugcinwa kwayo imini nobusuku.
4. Izisombululo zeTurnkey: Inkonzo epheleleyo ye-spectrum ukusuka ekufakweni ukuya ekuqinisekisweni kwenkqubo.
5. Ubonelelo lwezinto: Ii-substrates ze-SiC eziyi-2-12 intshi/ii-epi-wafers ziyafumaneka.

Iingenelo eziphambili ziquka:
• Ukukhula kwekristale ukuya kuthi ga kwiisentimitha ezi-8.
• Ukufana kokumelana <0.5%.
• Ixesha lokusebenza kwezixhobo >95%.
• Inkxaso yobugcisa esebenza iiyure ezingama-24 ngosuku, iintsuku ezisixhenxe ngeveki.